DE60236563D1 - Eckige Substrate - Google Patents

Eckige Substrate

Info

Publication number
DE60236563D1
DE60236563D1 DE60236563T DE60236563T DE60236563D1 DE 60236563 D1 DE60236563 D1 DE 60236563D1 DE 60236563 T DE60236563 T DE 60236563T DE 60236563 T DE60236563 T DE 60236563T DE 60236563 D1 DE60236563 D1 DE 60236563D1
Authority
DE
Germany
Prior art keywords
substrates
angular
angular substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236563T
Other languages
English (en)
Inventor
Jiro Moriya
Masataka Watanabe
Satoshi Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE60236563D1 publication Critical patent/DE60236563D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Structure Of Printed Boards (AREA)
  • Magnetic Record Carriers (AREA)
  • Magnetic Heads (AREA)
DE60236563T 2001-08-08 2002-08-08 Eckige Substrate Expired - Lifetime DE60236563D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001240028A JP4561950B2 (ja) 2001-08-08 2001-08-08 角形基板

Publications (1)

Publication Number Publication Date
DE60236563D1 true DE60236563D1 (de) 2010-07-15

Family

ID=19070697

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236563T Expired - Lifetime DE60236563D1 (de) 2001-08-08 2002-08-08 Eckige Substrate

Country Status (4)

Country Link
US (1) US7122280B2 (de)
EP (1) EP1283551B1 (de)
JP (1) JP4561950B2 (de)
DE (1) DE60236563D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4561950B2 (ja) * 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
JPWO2004083961A1 (ja) * 2003-03-20 2006-06-22 Hoya株式会社 レチクル用基板およびその製造方法、並びにマスクブランクおよびその製造方法
JP4206850B2 (ja) * 2003-07-18 2009-01-14 信越化学工業株式会社 露光用大型合成石英ガラス基板の製造方法
TWI329779B (en) 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP2005043836A (ja) * 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
JP4786899B2 (ja) * 2004-12-20 2011-10-05 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法、反射型マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法、及び半導体装置の製造方法
JP4731191B2 (ja) * 2005-03-28 2011-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
WO2016098452A1 (ja) * 2014-12-19 2016-06-23 Hoya株式会社 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
JP2020163529A (ja) * 2019-03-29 2020-10-08 株式会社荏原製作所 基板を保持するための研磨ヘッドおよび基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL256387A (de) * 1960-09-29
JPS6130374A (ja) * 1984-07-23 1986-02-12 Furukawa Electric Co Ltd:The 板材表面の鏡面研摩法
JPS62213960A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd ラツピング治具
KR0174531B1 (ko) * 1989-11-20 1999-04-01 이우에 사또시 마이크로 스트립 라인을 이용한 대역 필터 및 필터 특성 조정 방법
JP3134719B2 (ja) * 1995-06-23 2001-02-13 信越半導体株式会社 半導体ウェーハ研磨用研磨剤及び研磨方法
JP3534213B2 (ja) * 1995-09-30 2004-06-07 コマツ電子金属株式会社 半導体ウェハの製造方法
EP0833309B1 (de) * 1996-09-30 2003-01-22 Hoya Corporation Magnetisches Aufzeichnungsmedium und Verfahren zur Herstellung des magnetischen Aufzeichnungsmediums
TW432518B (en) * 1997-04-03 2001-05-01 Memc Electronic Materials Spa Flattening process for semiconductor wafers
US6049124A (en) * 1997-12-10 2000-04-11 Intel Corporation Semiconductor package
JPH11204493A (ja) * 1998-01-09 1999-07-30 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP3039507B2 (ja) * 1998-03-06 2000-05-08 日本電気株式会社 液晶表示装置及びその製造方法
JP2000186000A (ja) * 1998-12-22 2000-07-04 Speedfam-Ipec Co Ltd シリコンウェーハ加工方法およびその装置
JP2000218481A (ja) * 1999-01-27 2000-08-08 Nippon Sheet Glass Co Ltd ガラス板表面の筋状凹凸の除去方法および筋状凹凸を減じたガラス板
JP4561950B2 (ja) * 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板
JP4025960B2 (ja) * 2001-08-08 2007-12-26 信越化学工業株式会社 角形ホトマスク基板の研磨方法、角形ホトマスク基板、ホトマスクブランクス及びホトマスク
EP2317382B1 (de) * 2002-04-11 2016-10-26 Hoya Corporation Reflektiver Maskenrohling, reflektive Maske und Verfahren zur Herstellung des Maskenrohlings und der Maske

Also Published As

Publication number Publication date
EP1283551A3 (de) 2004-07-28
US20030031890A1 (en) 2003-02-13
EP1283551B1 (de) 2010-06-02
JP2003051472A (ja) 2003-02-21
EP1283551A2 (de) 2003-02-12
US7122280B2 (en) 2006-10-17
JP4561950B2 (ja) 2010-10-13

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