TW538113B - Aqueous dispersion for chemical mechanical polishing used for polishing of copper - Google Patents
Aqueous dispersion for chemical mechanical polishing used for polishing of copper Download PDFInfo
- Publication number
- TW538113B TW538113B TW090115802A TW90115802A TW538113B TW 538113 B TW538113 B TW 538113B TW 090115802 A TW090115802 A TW 090115802A TW 90115802 A TW90115802 A TW 90115802A TW 538113 B TW538113 B TW 538113B
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- Taiwan
- Prior art keywords
- honing
- chemical mechanical
- copper
- water
- patent application
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- 239000006185 dispersion Substances 0.000 title claims abstract description 91
- 239000000126 substance Substances 0.000 title claims abstract description 50
- 239000010949 copper Substances 0.000 title claims abstract description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 43
- 238000005498 polishing Methods 0.000 title abstract 6
- 239000002245 particle Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000004094 surface-active agent Substances 0.000 claims abstract description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims abstract description 18
- 239000011246 composite particle Substances 0.000 claims abstract description 16
- 150000002391 heterocyclic compounds Chemical class 0.000 claims abstract description 15
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical group [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000012964 benzotriazole Substances 0.000 claims abstract description 12
- PLUHAVSIMCXBEX-UHFFFAOYSA-N azane;dodecyl benzenesulfonate Chemical compound N.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 PLUHAVSIMCXBEX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims abstract description 6
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- HSJXWMZKBLUOLQ-UHFFFAOYSA-M potassium;2-dodecylbenzenesulfonate Chemical compound [K+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HSJXWMZKBLUOLQ-UHFFFAOYSA-M 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 54
- 150000001875 compounds Chemical class 0.000 claims description 26
- 238000011049 filling Methods 0.000 claims description 21
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- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 6
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- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
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- 239000011593 sulfur Substances 0.000 claims 1
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- 239000000758 substrate Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
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- 238000005299 abrasion Methods 0.000 description 6
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- 125000000623 heterocyclic group Chemical group 0.000 description 6
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- 238000003756 stirring Methods 0.000 description 6
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- HBWGDHDXAMFADB-UHFFFAOYSA-N ethenyl(triethyl)silane Chemical compound CC[Si](CC)(CC)C=C HBWGDHDXAMFADB-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000002316 fumigant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical class OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000199462A JP3837277B2 (ja) | 2000-06-30 | 2000-06-30 | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW538113B true TW538113B (en) | 2003-06-21 |
Family
ID=18697476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090115802A TW538113B (en) | 2000-06-30 | 2001-06-28 | Aqueous dispersion for chemical mechanical polishing used for polishing of copper |
Country Status (6)
Country | Link |
---|---|
US (1) | US6653267B2 (de) |
EP (1) | EP1167482B1 (de) |
JP (1) | JP3837277B2 (de) |
KR (1) | KR100747954B1 (de) |
DE (1) | DE60127206T2 (de) |
TW (1) | TW538113B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101974297A (zh) * | 2010-11-12 | 2011-02-16 | 大连三达奥克化学股份有限公司 | 核/壳型复合纳米磨料铜化学机械抛光液 |
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JP2000183003A (ja) * | 1998-10-07 | 2000-06-30 | Toshiba Corp | 銅系金属用研磨組成物および半導体装置の製造方法 |
JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP4187497B2 (ja) * | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
JP4688397B2 (ja) * | 2002-03-27 | 2011-05-25 | 泰弘 谷 | キャリア粒子の取扱い方法および研磨剤 |
TWI282360B (en) | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
KR100480797B1 (ko) * | 2002-07-26 | 2005-04-07 | 엘지.필립스 엘시디 주식회사 | 구리 몰리브덴막의 식각속도를 개선한 식각용액 및 그식각방법 |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
US20040175942A1 (en) * | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
JP2004247605A (ja) | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
DE10313517B4 (de) * | 2003-03-25 | 2006-03-30 | Atotech Deutschland Gmbh | Lösung zum Ätzen von Kupfer, Verfahren zum Vorbehandeln einer Schicht aus Kupfer sowie Anwendung des Verfahrens |
EP1477538B1 (de) * | 2003-05-12 | 2007-07-25 | JSR Corporation | Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben |
JP4649871B2 (ja) * | 2003-05-12 | 2011-03-16 | Jsr株式会社 | 化学機械研磨剤キットを用いた化学機械研磨方法 |
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
KR20060118396A (ko) * | 2003-07-30 | 2006-11-23 | 클라이막스 엔지니어레드 메테리얼스, 엘엘씨 | 구리의 화학적-기계적 평면화를 위한 슬러리 및 방법 |
US7186653B2 (en) | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
JP2005116987A (ja) * | 2003-10-10 | 2005-04-28 | Fujimi Inc | 研磨用組成物 |
US20070176140A1 (en) * | 2003-09-30 | 2007-08-02 | Tsuyoshi Matsuda | Polishing composition and polishing method |
TWI347969B (en) | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
JP4759219B2 (ja) * | 2003-11-25 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP3892846B2 (ja) * | 2003-11-27 | 2007-03-14 | 株式会社東芝 | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
US7287314B2 (en) * | 2004-02-27 | 2007-10-30 | Hitachi Global Storage Technologies Netherlands B.V. | One step copper damascene CMP process and slurry |
JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2006114729A (ja) * | 2004-10-15 | 2006-04-27 | Jsr Corp | 余剰の金属層の除去方法 |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
KR100601740B1 (ko) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | 투명도전막 식각용액 |
KR20080015027A (ko) * | 2005-06-13 | 2008-02-15 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 규화물 형성 후 금속 또는 금속 합금의 선택적인제거를 위한 조성물 및 방법 |
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-
2000
- 2000-06-30 JP JP2000199462A patent/JP3837277B2/ja not_active Expired - Lifetime
-
2001
- 2001-06-28 TW TW090115802A patent/TW538113B/zh not_active IP Right Cessation
- 2001-06-28 EP EP01115585A patent/EP1167482B1/de not_active Expired - Lifetime
- 2001-06-28 DE DE60127206T patent/DE60127206T2/de not_active Expired - Lifetime
- 2001-06-29 KR KR1020010037921A patent/KR100747954B1/ko active IP Right Grant
- 2001-06-29 US US09/893,961 patent/US6653267B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101974297A (zh) * | 2010-11-12 | 2011-02-16 | 大连三达奥克化学股份有限公司 | 核/壳型复合纳米磨料铜化学机械抛光液 |
Also Published As
Publication number | Publication date |
---|---|
US6653267B2 (en) | 2003-11-25 |
US20020016275A1 (en) | 2002-02-07 |
DE60127206T2 (de) | 2007-12-20 |
JP3837277B2 (ja) | 2006-10-25 |
EP1167482A3 (de) | 2003-09-03 |
EP1167482A2 (de) | 2002-01-02 |
KR100747954B1 (ko) | 2007-08-08 |
DE60127206D1 (de) | 2007-04-26 |
JP2002012854A (ja) | 2002-01-15 |
KR20020002285A (ko) | 2002-01-09 |
EP1167482B1 (de) | 2007-03-14 |
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