KR100719982B1 - 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 - Google Patents
화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 Download PDFInfo
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- KR100719982B1 KR100719982B1 KR1020010001513A KR20010001513A KR100719982B1 KR 100719982 B1 KR100719982 B1 KR 100719982B1 KR 1020010001513 A KR1020010001513 A KR 1020010001513A KR 20010001513 A KR20010001513 A KR 20010001513A KR 100719982 B1 KR100719982 B1 KR 100719982B1
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- polishing
- aqueous dispersion
- film
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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Abstract
Description
Claims (42)
- 적어도 지립, 물 및 연마 속도 조정 성분을 함유하고, 구리막, 배리어 금속막 및 절연막을 동일한 조건에 의해 연마했을 경우, 상기 구리막의 연마 속도 (RCu)와 상기 배리어 금속막의 연마 속도 (RBM)의 비 (RCu/RBM)가 0.5≤RCu/RBM≤2이고, 상기 구리막의 연마 속도 (RCu)와 상기 절연막의 연마 속도 (RIn)의 비 (RCu/RIn)가 0.5≤RCu/RIn≤2이고,상기 연마 속도 조정 성분이 말레산 이온이며,상기 말레산 이온과 쌍을 이루는 양이온은 칼륨 이온이고,pH는 8.5 내지 11인 것을 특징으로 하는 화학 기계 연마용 수계 분산체.
- 제1항에 있어서, 상기 배리어 금속막이 탄탈 및(또는) 질화탄탈로 이루어진 것인 화학 기계 연마용 수계 분산체.
- 삭제
- 제1항에 있어서, 상기 지립이 무기 입자, 유기 입자 및 무기 유기 복합 입자로부터 선택된 1종 이상의 입자인 화학 기계 연마용 수계 분산체.
- 삭제
- 제1항에 있어서, 상기 말레산 이온의 농도가 0.005 내지 1 몰/리터인 화학 기계 연마용 수계 분산체.
- 삭제
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- 구리막의 연마 속도 (RCu)와 배리어 금속막의 연마 속도 (RBM)의 비 (RCu/RBM)가 20 이상인 화학 기계 연마용 수계 분산체를 사용하는 제1 단계 화학 기계 연마 공정과,적어도 지립, 물 및 연마 속도 조정 성분을 함유하고, 구리막, 배리어 금속막 및 절연막을 동일한 조건에 의해 연마했을 경우, 상기 구리막의 연마 속도 (RCu)와 상기 배리어 금속막의 연마 속도 (RBM)의 비 (RCu/RBM)가 0.5≤RCu/RBM≤2이고, 상기 구리막의 연마 속도 (RCu)와 상기 절연막의 연마 속도 (RIn)의 비 (RCu/RIn)가 0.5≤RCu/RIn≤2인 화학 기계 연마용 수계 분산체를 사용하는 제2 단계 화학 기계 연마 공정을 구비하고,상기 연마 속도 조정 성분이 말레산 이온이며,상기 말레산 이온과 쌍을 이루는 양이온은 칼륨 이온이고,상기 화학 기계 연마용 수계 분산체의 pH는 8.5 내지 11인 것을 특징으로 하는 화학 기계 연마 방법.
- 삭제
- 삭제
- 삭제
- 제17항에 있어서, 상기 배리어 금속막이 탄탈 및(또는) 질화탄탈로 이루어진 것인 화학 기계 연마 방법.
- 제17항에 있어서, 상기 지립이 무기 입자, 유기 입자 및 무기 유기 복합 입자로부터 선택된 1종 이상의 입자인 화학 기계 연마 방법.
- 삭제
- 제17항에 있어서, 상기 말레산 이온의 농도가 0.005 내지 1 몰/리터인 화학 기계 연마 방법.
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JP2000003340A JP3736249B2 (ja) | 2000-01-12 | 2000-01-12 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
JP2000-3340 | 2000-01-12 | ||
JP2000-312134 | 2000-10-12 | ||
JP2000312134A JP4001219B2 (ja) | 2000-10-12 | 2000-10-12 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
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KR1020060048748A KR100746785B1 (ko) | 2000-01-12 | 2006-05-30 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 |
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Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI254070B (en) * | 1999-08-18 | 2006-05-01 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
US6592980B1 (en) * | 1999-12-07 | 2003-07-15 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
JP4078787B2 (ja) * | 2000-03-31 | 2008-04-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP3837277B2 (ja) * | 2000-06-30 | 2006-10-25 | 株式会社東芝 | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 |
US6468913B1 (en) | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
WO2002015255A1 (en) * | 2000-08-11 | 2002-02-21 | Chem Trace Corporation | System and method for cleaning semiconductor fabrication equipment parts |
TW462085B (en) * | 2000-10-26 | 2001-11-01 | United Microelectronics Corp | Planarization of organic silicon low dielectric constant material by chemical mechanical polishing |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
JP2002367996A (ja) * | 2001-06-06 | 2002-12-20 | Nec Corp | 半導体装置の製造方法 |
US6656241B1 (en) * | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
US6790768B2 (en) * | 2001-07-11 | 2004-09-14 | Applied Materials Inc. | Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects |
US7008554B2 (en) | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
US7104869B2 (en) | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
US6821881B2 (en) | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US20030037697A1 (en) * | 2001-08-21 | 2003-02-27 | Jinru Bian | Second step polishing by CMP |
US7037177B2 (en) * | 2001-08-30 | 2006-05-02 | Micron Technology, Inc. | Method and apparatus for conditioning a chemical-mechanical polishing pad |
US6638326B2 (en) * | 2001-09-25 | 2003-10-28 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of tantalum and tantalum nitride |
ATE386786T1 (de) * | 2001-10-26 | 2008-03-15 | Asahi Glass Co Ltd | Poliermasse, verfahren zu ihrer herstellung und polierverfahren |
JP3692067B2 (ja) * | 2001-11-30 | 2005-09-07 | 株式会社東芝 | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
JP4187497B2 (ja) | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
US20030162399A1 (en) * | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
US7153197B2 (en) * | 2002-05-07 | 2006-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for achieving uniform CU CMP polishing |
JP2003338469A (ja) * | 2002-05-21 | 2003-11-28 | Fujitsu Ltd | 研磨剤、研磨方法および洗浄方法 |
JP2004165613A (ja) * | 2002-06-03 | 2004-06-10 | Shipley Co Llc | 電子デバイスの製造 |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
GB2393186B (en) * | 2002-07-31 | 2006-02-22 | Kao Corp | Polishing composition |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
TWI295950B (en) | 2002-10-03 | 2008-04-21 | Applied Materials Inc | Method for reducing delamination during chemical mechanical polishing |
US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
KR100505328B1 (ko) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법 |
US20040209066A1 (en) * | 2003-04-17 | 2004-10-21 | Swisher Robert G. | Polishing pad with window for planarization |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
TWI292931B (en) * | 2003-05-12 | 2008-01-21 | Jsr Corp | Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same |
JP2004342751A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
JP2004349426A (ja) | 2003-05-21 | 2004-12-09 | Jsr Corp | Sti用化学機械研磨方法 |
US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
TWI291987B (en) * | 2003-07-04 | 2008-01-01 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
US7045072B2 (en) * | 2003-07-24 | 2006-05-16 | Tan Samantha S H | Cleaning process and apparatus for silicate materials |
US7091132B2 (en) * | 2003-07-24 | 2006-08-15 | Applied Materials, Inc. | Ultrasonic assisted etch using corrosive liquids |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
US20050090106A1 (en) * | 2003-10-22 | 2005-04-28 | Jinru Bian | Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent |
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
US7063800B2 (en) * | 2003-11-10 | 2006-06-20 | Ying Ding | Methods of cleaning copper surfaces in the manufacture of printed circuit boards |
US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
US20160038418A1 (en) * | 2003-12-19 | 2016-02-11 | The University Of North Carolina At Chapel Hill | Nanoparticle fabrication methods, systems, and materials |
DE102004014925B4 (de) * | 2004-03-26 | 2016-12-29 | Infineon Technologies Ag | Elektronische Schaltkreisanordnung |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
US20060089094A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US20060089095A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
JP2006203188A (ja) * | 2004-12-22 | 2006-08-03 | Showa Denko Kk | 研磨組成物及び研磨方法 |
JP4876215B2 (ja) * | 2005-01-21 | 2012-02-15 | 独立行政法人産業技術総合研究所 | Cmp研磨方法、cmp研磨装置、及び半導体デバイスの製造方法 |
US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
US20060276041A1 (en) * | 2005-05-17 | 2006-12-07 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion |
US7488423B2 (en) * | 2005-08-02 | 2009-02-10 | Siemens Water Technologies Holding Corp. | System and method of slurry treatment |
US20070049180A1 (en) * | 2005-08-24 | 2007-03-01 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices |
US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
JP2007220891A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | ポストcmp処理液、およびこれを用いた半導体装置の製造方法 |
US20070249167A1 (en) * | 2006-04-21 | 2007-10-25 | Cabot Microelectronics Corporation | CMP method for copper-containing substrates |
US9120952B2 (en) * | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
JP5156752B2 (ja) * | 2006-11-01 | 2013-03-06 | クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー | チャンバーコンポーネントを洗浄する方法及び装置 |
US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
CN101816063A (zh) * | 2007-07-24 | 2010-08-25 | 霓达哈斯股份有限公司 | 研磨组合物 |
WO2009028471A1 (ja) * | 2007-08-24 | 2009-03-05 | Nitta Haas Incorporated | 研磨組成物 |
CN101933124B (zh) * | 2008-02-06 | 2012-07-04 | Jsr株式会社 | 化学机械研磨用水系分散体以及化学机械研磨方法 |
JP5361306B2 (ja) * | 2008-09-19 | 2013-12-04 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
EP2405708A1 (de) * | 2010-07-07 | 2012-01-11 | Saint-Gobain Glass France | Transparente Scheibe mit heizbarer Beschichtung |
CN105567096A (zh) * | 2014-10-09 | 2016-05-11 | 罗松全 | 一种花岗岩抛光剂的配方及其应用 |
US9728500B2 (en) * | 2015-12-17 | 2017-08-08 | Intel Corporation | Integrated circuit surface layer with adhesion-functional group |
CN114015360B (zh) * | 2021-11-23 | 2022-07-05 | 浙江奥首材料科技有限公司 | 一种蓝宝石的水性全悬浮钻石抛光液、其制备方法及用途 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980024900A (ko) * | 1996-09-24 | 1998-07-06 | 마르타 앤 피네칸 | 화학적 기계적 연마용 복수 산화제 슬러리 |
WO1999064527A1 (en) * | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5953317B2 (ja) | 1983-03-10 | 1984-12-24 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 非晶質酸化アルミニウム表面の化学的−機械的研摩方法 |
JPH04291723A (ja) | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー用研摩剤 |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
KR100302671B1 (ko) * | 1996-07-25 | 2001-09-22 | 피. 제리 코더 | 화학기계적연마용조성물및화학기계적연마방법 |
JP3507628B2 (ja) | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
JP3015763B2 (ja) | 1996-08-30 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法 |
KR19980032145A (ko) | 1996-10-04 | 1998-07-25 | 포만제프리엘 | 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법 |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JPH1140526A (ja) | 1997-07-22 | 1999-02-12 | Hitachi Ltd | 配線形成方法及び半導体装置の製造方法 |
JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
JPH10279928A (ja) | 1998-02-27 | 1998-10-20 | Rodel Inc | 研磨速度抑制化合物 |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
JP2000160139A (ja) | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
JP2002117670A (ja) * | 2000-10-04 | 2002-04-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
2000
- 2000-12-30 TW TW89128391A patent/TW572980B/zh not_active IP Right Cessation
-
2001
- 2001-01-02 EP EP01100217A patent/EP1116762A1/en not_active Withdrawn
- 2001-01-09 US US09/756,193 patent/US6579153B2/en not_active Expired - Lifetime
- 2001-01-11 KR KR1020010001513A patent/KR100719982B1/ko not_active IP Right Cessation
-
2006
- 2006-05-30 KR KR1020060048748A patent/KR100746785B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980024900A (ko) * | 1996-09-24 | 1998-07-06 | 마르타 앤 피네칸 | 화학적 기계적 연마용 복수 산화제 슬러리 |
WO1999064527A1 (en) * | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
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EP1116762A1 (en) | 2001-07-18 |
KR20010070501A (ko) | 2001-07-25 |
KR20060066707A (ko) | 2006-06-16 |
TW572980B (en) | 2004-01-21 |
US20010008828A1 (en) | 2001-07-19 |
US6579153B2 (en) | 2003-06-17 |
KR100746785B1 (ko) | 2007-08-06 |
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