ATE386786T1 - Poliermasse, verfahren zu ihrer herstellung und polierverfahren - Google Patents
Poliermasse, verfahren zu ihrer herstellung und polierverfahrenInfo
- Publication number
- ATE386786T1 ATE386786T1 AT02770253T AT02770253T ATE386786T1 AT E386786 T1 ATE386786 T1 AT E386786T1 AT 02770253 T AT02770253 T AT 02770253T AT 02770253 T AT02770253 T AT 02770253T AT E386786 T1 ATE386786 T1 AT E386786T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing
- compound
- low
- carbon atoms
- producing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 abstract 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 abstract 2
- 125000004432 carbon atom Chemical group C* 0.000 abstract 2
- -1 heterocyclic benzene compound Chemical class 0.000 abstract 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract 2
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 abstract 1
- 239000012964 benzotriazole Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 150000003138 primary alcohols Chemical class 0.000 abstract 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 abstract 1
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001329148 | 2001-10-26 | ||
| JP2001353207 | 2001-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE386786T1 true ATE386786T1 (de) | 2008-03-15 |
Family
ID=26624134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02770253T ATE386786T1 (de) | 2001-10-26 | 2002-10-23 | Poliermasse, verfahren zu ihrer herstellung und polierverfahren |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7854777B2 (de) |
| EP (1) | EP1445796B1 (de) |
| JP (2) | JP4576117B2 (de) |
| KR (2) | KR100952870B1 (de) |
| CN (1) | CN1306562C (de) |
| AT (1) | ATE386786T1 (de) |
| DE (1) | DE60225171T2 (de) |
| TW (1) | TWI231821B (de) |
| WO (1) | WO2003036705A1 (de) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1150341A4 (de) * | 1998-12-28 | 2005-06-08 | Hitachi Chemical Co Ltd | Materialien für metallpolierflüssigkeit, metallpolierflüssigkeit, ihre herstellung und poliermethode |
| WO2003038883A1 (fr) | 2001-10-31 | 2003-05-08 | Hitachi Chemical Co., Ltd. | Fluide et procede de polissage |
| US20100009540A1 (en) * | 2002-09-25 | 2010-01-14 | Asahi Glass Company Limited | Polishing compound, its production process and polishing method |
| ATE452422T1 (de) * | 2002-09-25 | 2010-01-15 | Seimi Chem Kk | Poliermittelzusammensetzung und polierverfahren |
| CN101371339A (zh) * | 2003-05-12 | 2009-02-18 | 高级技术材料公司 | 用于步骤ⅱ的铜衬里和其他相关材料的化学机械抛光组合物及其使用方法 |
| US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
| JP2005294798A (ja) * | 2004-03-08 | 2005-10-20 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| US7446046B2 (en) * | 2005-01-06 | 2008-11-04 | Intel Corporation | Selective polish for fabricating electronic devices |
| US7467988B2 (en) * | 2005-04-08 | 2008-12-23 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
| US7294044B2 (en) * | 2005-04-08 | 2007-11-13 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
| US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
| TWI271555B (en) * | 2005-06-13 | 2007-01-21 | Basf Ag | Slurry composition for polishing color filter |
| US20080171441A1 (en) * | 2005-06-28 | 2008-07-17 | Asahi Glass Co., Ltd. | Polishing compound and method for producing semiconductor integrated circuit device |
| JPWO2007015551A1 (ja) * | 2005-08-04 | 2009-02-19 | 旭硝子株式会社 | 研磨剤組成物および研磨方法 |
| WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
| US20070068902A1 (en) * | 2005-09-29 | 2007-03-29 | Yasushi Matsunami | Polishing composition and polishing method |
| US7763312B2 (en) * | 2006-04-17 | 2010-07-27 | Elantas Pdg, Inc. | Dispersion of nano-alumina in a resin or solvent system |
| JP5725145B2 (ja) * | 2006-10-11 | 2015-05-27 | 日立化成株式会社 | 金属用研磨液とその製造方法及び金属用研磨液を用いた被研磨膜の研磨方法 |
| WO2009056491A1 (en) * | 2007-10-29 | 2009-05-07 | Basf Se | Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer |
| EP2237311A4 (de) * | 2008-02-01 | 2011-11-30 | Fujimi Inc | Polierzusammensetzung und polierverfahren dafür |
| FR2932108B1 (fr) * | 2008-06-10 | 2019-07-05 | Soitec | Polissage de couches de germanium |
| US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
| US8551887B2 (en) | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
| CN102822308B (zh) * | 2010-03-29 | 2014-12-03 | 旭硝子株式会社 | 研磨剂、研磨方法及半导体集成电路装置的制造方法 |
| TWI605112B (zh) * | 2011-02-21 | 2017-11-11 | Fujimi Inc | 研磨用組成物 |
| CN102925060B (zh) * | 2012-11-09 | 2014-03-26 | 济南大学 | 一种大理石复合抛光粉的制备方法 |
| CN105658757B (zh) * | 2013-10-23 | 2019-02-19 | 东进世美肯株式会社 | 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法 |
| JP6327746B2 (ja) * | 2014-03-31 | 2018-05-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN104263249B (zh) * | 2014-09-26 | 2016-06-29 | 深圳市力合材料有限公司 | 一种硅溶胶的处理方法 |
| KR102298238B1 (ko) * | 2016-06-03 | 2021-09-06 | 후지필름 가부시키가이샤 | 연마액, 및 화학적 기계적 연마 방법 |
| JP7010229B2 (ja) * | 2016-09-21 | 2022-01-26 | 昭和電工マテリアルズ株式会社 | スラリ及び研磨方法 |
| CN109280492A (zh) * | 2017-07-21 | 2019-01-29 | 天津西美科技有限公司 | 一种磷化铟晶片抛光液 |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
| CN109746771B (zh) * | 2019-02-14 | 2020-11-20 | 南京航空航天大学 | 一种CsPbX3无机钙钛矿晶体材料的抛光方法 |
| TWI804925B (zh) * | 2020-07-20 | 2023-06-11 | 美商Ｃｍｃ材料股份有限公司 | 矽晶圓拋光組合物及方法 |
| CN112142630B (zh) * | 2020-10-28 | 2022-06-28 | 雅邦绿色过程与新材料研究院南京有限公司 | 一种从半导体工业废液中回收二甲基亚砜的方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US589509A (en) * | 1897-09-07 | Electrical igniter for gas-engines | ||
| US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| JPH10166258A (ja) | 1996-12-06 | 1998-06-23 | Tadahiro Omi | 研磨剤組成物 |
| JPH1140526A (ja) * | 1997-07-22 | 1999-02-12 | Hitachi Ltd | 配線形成方法及び半導体装置の製造方法 |
| US5897375A (en) | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| WO2000024842A1 (en) * | 1998-10-23 | 2000-05-04 | Arch Specialty Chemicals, Inc. | A chemical mechanical polishing slurry system having an activator solution |
| EP1150341A4 (de) * | 1998-12-28 | 2005-06-08 | Hitachi Chemical Co Ltd | Materialien für metallpolierflüssigkeit, metallpolierflüssigkeit, ihre herstellung und poliermethode |
| JP4156137B2 (ja) * | 1999-07-19 | 2008-09-24 | 株式会社トクヤマ | 金属膜用研磨剤 |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| JP3805588B2 (ja) * | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP2001267273A (ja) * | 2000-01-11 | 2001-09-28 | Sumitomo Chem Co Ltd | 金属用研磨材、研磨組成物及び研磨方法 |
| TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
| US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
| JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
| JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
| US6569349B1 (en) * | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
| US6623355B2 (en) * | 2000-11-07 | 2003-09-23 | Micell Technologies, Inc. | Methods, apparatus and slurries for chemical mechanical planarization |
| US6740589B2 (en) * | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
| US20020104269A1 (en) * | 2001-01-26 | 2002-08-08 | Applied Materials, Inc. | Photochemically enhanced chemical polish |
| SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US6812193B2 (en) * | 2001-08-31 | 2004-11-02 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US6620215B2 (en) * | 2001-12-21 | 2003-09-16 | Dynea Canada, Ltd. | Abrasive composition containing organic particles for chemical mechanical planarization |
| US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
-
2002
- 2002-10-23 CN CNB028207246A patent/CN1306562C/zh not_active Expired - Fee Related
- 2002-10-23 JP JP2003539094A patent/JP4576117B2/ja not_active Expired - Fee Related
- 2002-10-23 KR KR1020097025403A patent/KR100952870B1/ko not_active IP Right Cessation
- 2002-10-23 EP EP02770253A patent/EP1445796B1/de not_active Expired - Lifetime
- 2002-10-23 AT AT02770253T patent/ATE386786T1/de not_active IP Right Cessation
- 2002-10-23 WO PCT/JP2002/010996 patent/WO2003036705A1/ja active Application Filing
- 2002-10-23 DE DE60225171T patent/DE60225171T2/de not_active Expired - Lifetime
- 2002-10-23 KR KR1020047004982A patent/KR100939472B1/ko not_active IP Right Cessation
- 2002-10-24 TW TW091124781A patent/TWI231821B/zh not_active IP Right Cessation
-
2004
- 2004-04-26 US US10/831,618 patent/US7854777B2/en not_active Expired - Fee Related
-
2010
- 2010-06-09 JP JP2010131771A patent/JP2010251778A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1445796B1 (de) | 2008-02-20 |
| DE60225171T2 (de) | 2008-06-05 |
| JP2010251778A (ja) | 2010-11-04 |
| JP4576117B2 (ja) | 2010-11-04 |
| TWI231821B (en) | 2005-05-01 |
| KR100939472B1 (ko) | 2010-01-29 |
| US20040194392A1 (en) | 2004-10-07 |
| CN1572017A (zh) | 2005-01-26 |
| KR20040052221A (ko) | 2004-06-22 |
| WO2003036705A1 (fr) | 2003-05-01 |
| EP1445796A1 (de) | 2004-08-11 |
| US7854777B2 (en) | 2010-12-21 |
| KR100952870B1 (ko) | 2010-04-13 |
| EP1445796A4 (de) | 2004-11-17 |
| KR20100009581A (ko) | 2010-01-27 |
| DE60225171D1 (de) | 2008-04-03 |
| CN1306562C (zh) | 2007-03-21 |
| JPWO2003036705A1 (ja) | 2005-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |