JP2010153853A - ケミカルメカニカル研磨組成物およびそれに関する方法 - Google Patents
ケミカルメカニカル研磨組成物およびそれに関する方法 Download PDFInfo
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- JP2010153853A JP2010153853A JP2009279193A JP2009279193A JP2010153853A JP 2010153853 A JP2010153853 A JP 2010153853A JP 2009279193 A JP2009279193 A JP 2009279193A JP 2009279193 A JP2009279193 A JP 2009279193A JP 2010153853 A JP2010153853 A JP 2010153853A
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- chemical mechanical
- mechanical polishing
- polishing composition
- hydroxide
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- 159000000014 iron salts Chemical class 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 150000004023 quaternary phosphonium compounds Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】水;平均粒子サイズ100nm以下である砥粒1〜40重量%;第四級化合物0.001〜5重量%;式(I):
(式中、Rは、C2〜C20アルキル、C2〜C20アリール、C2〜C20アラルキルおよびC2〜C20アルカリールから選択され;xは整数0〜20であり;yは整数0〜20であり;x+y≧1である)で表わされる材料を含み;pH5以下であるケミカルメカニカル研磨組成物を用いて、配線金属およびlow−k絶縁材料少なくとも1種の存在下でバリヤ材料を含む基材をケミカルメカニカル研磨する方法。
【選択図】なし
Description
本発明のケミカルメカニカル研磨法は、銅およびlow−k絶縁材料少なくとも1種の存在下でバリヤ材料を含む基材の研磨に有効である。本発明の方法で用いるケミカルメカニカル研磨組成物は、基材上の他の材料よりも有利な選択性で、高いバリヤ材料除去速度を提供する。
ケミカルメカニカル研磨組成物
試験したケミカルメカニカル研磨組成物(CMPC)を、表1に記載した。ケミカルメカニカル研磨組成物Aは、クレームされた本発明の範囲ではない比較配合物である。
¥実施例1および2で用いた式Iの材料はChemeen(登録商標)S-2であり、実施例3および4で用いた式Iの材料はChemeen(登録商標)S-5であり、並びに実施例5および6で用いた式Iの材料はChemeen(登録商標)T-5であった。実施例で用いたChemeen(登録商標)材料は、PCC Chemax Inc.から市販されている。
£実施例で用いた砥粒は、AZ Electronic Materialsにより製造されたKlebosol(登録商標)PL1598B25コロイドシリカであった。
表1に記載されているケミカルメカニカル研磨組成物を、200mmブランケットウエーハ(blanket wafer)、具体的には(A)TEOS絶縁ウエーハ;(B)Coral(登録商標)low−k絶縁炭素ドープ酸化膜ウエーハ(Novellus Systems, Inc.から市販);(C)窒化タンタルウエーハ;および(D)電気めっき銅ウエーハを用いて試験した。Strasbaugh nSpire(商標)CMPシステムモデル6EC回転型研磨プラットホームを用いて、実施例におけるブランケットウエーハの全てを、1010グルーブパターンを有するVisionPad(商標)3500ポリウレタン研磨パッド(Rohm and Haas Electronic Materials CMP Inc.から市販されている)を用いて研磨した。全ての実施例で用いた研磨条件には、プラテン速度93rpm;キャリヤ速度87rpm;研磨媒体流量200ml/min、およびダウンフォース1.5psiが含まれる。それぞれの研磨実験に対する除去速度を、表1に示す。なお、除去速度は、ブランケットウエーハ上の研磨前および後のフィルム厚さから算出した。具体的には、Coral(登録商標)ウエーハおよびTEOSウエーハに対する除去速度を、KLA-Tencorから市販されているSpectraFX 200光学薄膜計測システムを用いて求めた。電気めっき銅ウエーハおよび窒化タンタルウエーハに対する除去速度を、ResMap168型4点プローブ抵抗マッピングシステム(Creative Design Engineering, Inc.製)を用いて求めた。
Claims (10)
- 基材をケミカルメカニカル研磨する方法であって、
配線金属およびlow−k絶縁材料少なくとも1種の存在下でバリヤ材料を含む基材を用意し;
水;平均粒子サイズ100nm以下である砥粒1〜40重量%;酸化剤0〜10重量%;第四級化合物0.001〜5重量%;式(I):
(式中、Rは、C2〜C20アルキル、C2〜C20アリール、C2〜C20アラルキルおよびC2〜C20アルカリールから選択され;xは、整数0〜20であり;yは、整数0〜20であり;x+y≧1である)で表わされる材料を含み;pH5以下であるケミカルメカニカル研磨組成物を用意し;
ケミカルメカニカル研磨パッドを用意し;
ケミカルメカニカル研磨パッドと基材との界面に動的接触を作り出し;次いで
ケミカルメカニカル研磨組成物を、ケミカルメカニカル研磨パッド上で、ケミカルメカニカル研磨パッドと基材との界面または界面近くに計量分配することを含み;
バリヤ材料の少なくとも一部が、基材から除去される方法。 - 基材が、銅およびlow−k絶縁炭素ドープ酸化膜の存在下で窒化タンタル含む、請求項1記載の方法。
- ケミカルメカニカル研磨組成物が、窒化タンタル対銅の除去速度選択性2以上を示し、ケミカルメカニカル研磨組成物が、窒化タンタル対low−k絶縁炭素ドープ酸化膜の除去速度選択性3以上を示す、請求項2記載の方法。
- 基材が銅およびlow−k絶縁炭素ドープ酸化膜の存在下で窒化タンタルを含み;砥粒はコロイドシリカであり;そしてケミカルメカニカル研磨組成物は、ケミカルメカニカル研磨パッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカル研磨組成物流量200ml/min、および公称ダウンフォース1.5psiで、窒化タンタル除去速度800Å/min以上を示す、請求項1記載の方法。
- 基材をケミカルメカニカル研磨する方法であって:
配線金属およびlow−k絶縁材料少なくとも1種の存在下でバリヤ材料を含む基材を用意し;
水;平均粒子サイズ20〜30nmであるコロイドシリカ砥粒1〜5重量%;酸化剤0.05〜0.8重量%;インヒビター0〜10重量%;テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトライソプロピルアンモニウムヒドロキシド、テトラシクロプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、テトライソブチルアンモニウムヒドロキシド、テトラt−ブチルアンモニウムヒドロキシド、テトラsec−ブチルアンモニウムヒドロキシド、テトラシクロブチルアンモニウムヒドロキシド、テトラペンチルアンモニウムヒドロキシド、テトラシクロペンチルアンモニウムヒドロキシド、テトラヘキシルアンモニウムヒドロキシド、テトラシクロヘキシルアンモニウムヒドロキシド、およびこれらの混合物から選択される第四級化合物0.001〜5重量%;式(I):
(式中、Rは、大豆、牛脂、ココナツ、パーム油およびヒマシ油から選択される天然源から誘導されるC8〜C20アルキルであり;xは整数0〜20であり;yは整数0〜20であり;x+y≧1である)で表わされる材料0.01〜0.1重量%を含み;pH5以下であるケミカルメカニカル研磨組成物を用意し;
ケミカルメカニカル研磨パッドを用意し;
ケミカルメカニカル研磨パッドと基材との界面に動的接触を作り出し;次いで
ケミカルメカニカル研磨組成物を、ケミカルメカニカル研磨パッド上で、ケミカルメカニカル研磨パッドと基材との界面または界面近くに計量分配することを含み;
バリヤ材料の少なくとも一部が、基材から除去される方法。 - 基材が、銅およびlow−k絶縁炭素ドープ酸化膜の存在下で窒化タンタルを含む、請求項5記載の方法。
- ケミカルメカニカル研磨組成物が、窒化タンタル対銅の除去速度選択性2以上を示し、ケミカルメカニカル研磨組成物が、窒化タンタル対low−k絶縁炭素ドープ酸化膜の除去速度選択性3以上を示す、請求項6記載の方法。
- ケミカルメカニカル研磨組成物が、ケミカルメカニカル研磨パッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカル研磨組成物流量200ml/min、および公称ダウンフォース1.5psiで、窒化タンタル除去速度800Å/min以上を示す、請求項5記載の方法。
- ケミカルメカニカル研磨組成物が、ケミカルメカニカル研磨パッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカル研磨組成物流量200ml/min、および公称ダウンフォース1.5psiで、窒化タンタル除去速度800Å/min以上を示す、請求項6記載の方法。
- ケミカルメカニカル研磨組成物が、ケミカルメカニカル研磨パッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカル研磨組成物流量200ml/min、および公称ダウンフォース1.5psiで、窒化タンタル除去速度800Å/min以上を示す、請求項7記載の方法。
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JP2005167199A (ja) * | 2003-09-25 | 2005-06-23 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 高速バリア研磨組成物 |
JP2006253695A (ja) * | 2005-03-09 | 2006-09-21 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 薄膜及び絶縁材料をケミカルメカニカルポリッシングするための組成物及び方法 |
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JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
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CN101168647A (zh) * | 2006-10-27 | 2008-04-30 | 安集微电子(上海)有限公司 | 一种用于抛光多晶硅的化学机械抛光液 |
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JP2005167199A (ja) * | 2003-09-25 | 2005-06-23 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 高速バリア研磨組成物 |
JP2005117046A (ja) * | 2003-10-10 | 2005-04-28 | Air Products & Chemicals Inc | 研磨組成物及びその使用 |
JP2006253695A (ja) * | 2005-03-09 | 2006-09-21 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 薄膜及び絶縁材料をケミカルメカニカルポリッシングするための組成物及び方法 |
JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
JP2008172222A (ja) * | 2006-12-21 | 2008-07-24 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ルテニウムバリヤ研磨スラリー |
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EP2196509A1 (en) | 2010-06-16 |
TWI478227B (zh) | 2015-03-21 |
CN101767295B (zh) | 2012-05-23 |
KR20100067610A (ko) | 2010-06-21 |
DE602009000683D1 (de) | 2011-03-10 |
EP2196509B1 (en) | 2011-01-26 |
US20100151683A1 (en) | 2010-06-17 |
CN101767295A (zh) | 2010-07-07 |
JP5620673B2 (ja) | 2014-11-05 |
US8071479B2 (en) | 2011-12-06 |
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