DE602009000683D1 - Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren - Google Patents
Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige VerfahrenInfo
- Publication number
- DE602009000683D1 DE602009000683D1 DE602009000683T DE602009000683T DE602009000683D1 DE 602009000683 D1 DE602009000683 D1 DE 602009000683D1 DE 602009000683 T DE602009000683 T DE 602009000683T DE 602009000683 T DE602009000683 T DE 602009000683T DE 602009000683 D1 DE602009000683 D1 DE 602009000683D1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric constant
- chemical mechanical
- low dielectric
- constant material
- substrates containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title 2
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/332,816 US8071479B2 (en) | 2008-12-11 | 2008-12-11 | Chemical mechanical polishing composition and methods relating thereto |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602009000683D1 true DE602009000683D1 (de) | 2011-03-10 |
Family
ID=41598076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602009000683T Active DE602009000683D1 (de) | 2008-12-11 | 2009-03-13 | Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8071479B2 (de) |
| EP (1) | EP2196509B1 (de) |
| JP (1) | JP5620673B2 (de) |
| KR (1) | KR20100067610A (de) |
| CN (1) | CN101767295B (de) |
| DE (1) | DE602009000683D1 (de) |
| TW (1) | TWI478227B (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
| US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
| US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
| US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
| US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
| US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
| US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
| US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
| US9688885B2 (en) | 2014-10-21 | 2017-06-27 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
| US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
| CN116288366A (zh) | 2014-10-21 | 2023-06-23 | Cmc材料股份有限公司 | 腐蚀抑制剂以及相关的组合物及方法 |
| KR102525356B1 (ko) * | 2014-10-21 | 2023-04-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 코발트 파임 제어제 |
| US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
| US10170335B1 (en) * | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US10597558B1 (en) | 2018-10-20 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
| US10640681B1 (en) | 2018-10-20 | 2020-05-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
| US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
| US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
| US6409781B1 (en) | 2000-05-01 | 2002-06-25 | Advanced Technology Materials, Inc. | Polishing slurries for copper and associated materials |
| US6787061B1 (en) * | 2000-11-16 | 2004-09-07 | Intel Corporation | Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
| US7300602B2 (en) | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
| US6916742B2 (en) | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| US20050056810A1 (en) | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US20050076580A1 (en) * | 2003-10-10 | 2005-04-14 | Air Products And Chemicals, Inc. | Polishing composition and use thereof |
| US7988878B2 (en) | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
| US20060110923A1 (en) | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
| US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
| CN1731567B (zh) * | 2005-06-22 | 2010-08-18 | 中国科学院上海微系统与信息技术研究所 | 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液 |
| WO2007102138A2 (en) | 2007-01-02 | 2007-09-13 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
| US20070298611A1 (en) | 2006-06-27 | 2007-12-27 | Jinru Bian | Selective barrier slurry for chemical mechanical polishing |
| CN1884410A (zh) * | 2006-07-05 | 2006-12-27 | 大连理工大学 | 一种化学机械抛光单晶氧化镁基片用的抛光液 |
| CN101168647A (zh) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | 一种用于抛光多晶硅的化学机械抛光液 |
| US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
-
2008
- 2008-12-11 US US12/332,816 patent/US8071479B2/en active Active
-
2009
- 2009-03-13 DE DE602009000683T patent/DE602009000683D1/de active Active
- 2009-03-13 EP EP09155071A patent/EP2196509B1/de active Active
- 2009-11-25 TW TW098140060A patent/TWI478227B/zh active
- 2009-12-01 KR KR1020090117931A patent/KR20100067610A/ko not_active Application Discontinuation
- 2009-12-09 JP JP2009279193A patent/JP5620673B2/ja active Active
- 2009-12-10 CN CN2009102585540A patent/CN101767295B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2196509A1 (de) | 2010-06-16 |
| CN101767295A (zh) | 2010-07-07 |
| EP2196509B1 (de) | 2011-01-26 |
| US20100151683A1 (en) | 2010-06-17 |
| TW201030831A (en) | 2010-08-16 |
| US8071479B2 (en) | 2011-12-06 |
| JP2010153853A (ja) | 2010-07-08 |
| TWI478227B (zh) | 2015-03-21 |
| CN101767295B (zh) | 2012-05-23 |
| JP5620673B2 (ja) | 2014-11-05 |
| KR20100067610A (ko) | 2010-06-21 |
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