WO2009028471A1 - 研磨組成物 - Google Patents

研磨組成物 Download PDF

Info

Publication number
WO2009028471A1
WO2009028471A1 PCT/JP2008/065131 JP2008065131W WO2009028471A1 WO 2009028471 A1 WO2009028471 A1 WO 2009028471A1 JP 2008065131 W JP2008065131 W JP 2008065131W WO 2009028471 A1 WO2009028471 A1 WO 2009028471A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
polishing
enables
improving flatness
disclosed
Prior art date
Application number
PCT/JP2008/065131
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Matsumura
Hiroshi Nitta
Original Assignee
Nitta Haas Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Incorporated filed Critical Nitta Haas Incorporated
Priority to JP2009530112A priority Critical patent/JPWO2009028471A1/ja
Priority to US12/733,328 priority patent/US20100207058A1/en
Priority to CN200880104179A priority patent/CN101802981A/zh
Publication of WO2009028471A1 publication Critical patent/WO2009028471A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

　本発明の目的は、高速な研磨速度を達成し、かつ、平坦性を向上させることのできる研磨組成物を提供することである。本発明の研磨組成物は、金属膜、特に銅（Ｃｕ）膜に好適な研磨組成物であって、アンモニウム基を含む塩基性化合物、アルキルナフタレンスルホン酸塩および過酸化水素を含み、残部が水である。ｐＨの適応範囲としては８～１２である。これらを含むことで、高速な研磨速度を達成し、かつ、平坦性を向上させることのできる研磨組成物を実現することができる。
PCT/JP2008/065131 2007-08-24 2008-08-25 研磨組成物 WO2009028471A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009530112A JPWO2009028471A1 (ja) 2007-08-24 2008-08-25 研磨組成物
US12/733,328 US20100207058A1 (en) 2007-08-24 2008-08-25 Polishing composition
CN200880104179A CN101802981A (zh) 2007-08-24 2008-08-25 研磨组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007218985 2007-08-24
JP2007-218985 2007-08-24

Publications (1)

Publication Number Publication Date
WO2009028471A1 true WO2009028471A1 (ja) 2009-03-05

Family

ID=40387191

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065131 WO2009028471A1 (ja) 2007-08-24 2008-08-25 研磨組成物

Country Status (6)

Country Link
US (1) US20100207058A1 (ja)
JP (1) JPWO2009028471A1 (ja)
KR (1) KR20100054152A (ja)
CN (1) CN101802981A (ja)
TW (1) TW200914594A (ja)
WO (1) WO2009028471A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013147046A1 (ja) * 2012-03-30 2013-10-03 ニッタ・ハース株式会社 研磨組成物
CN105802509B (zh) * 2014-12-29 2018-10-26 安集微电子（上海）有限公司 一种组合物在阻挡层抛光中的应用
KR101854510B1 (ko) * 2015-12-11 2018-05-03 삼성에스디아이 주식회사 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
CN109233644B (zh) * 2018-09-19 2021-03-12 广州亦盛环保科技有限公司 一种精抛光液及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121541A (ja) * 2000-10-12 2002-04-26 Jsr Corp 化学機械研磨用水系分散体
JP2004153158A (ja) * 2002-10-31 2004-05-27 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US20040008828A1 (en) * 2002-07-09 2004-01-15 Scott Coles Dynamic information retrieval system utilizing voice recognition
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121541A (ja) * 2000-10-12 2002-04-26 Jsr Corp 化学機械研磨用水系分散体
JP2004153158A (ja) * 2002-10-31 2004-05-27 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法

Also Published As

Publication number Publication date
US20100207058A1 (en) 2010-08-19
KR20100054152A (ko) 2010-05-24
JPWO2009028471A1 (ja) 2010-12-02
TW200914594A (en) 2009-04-01
CN101802981A (zh) 2010-08-11

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