KR100775382B1 - 마스크 블랭크, 위상 쉬프트 마스크의 제조 방법 및 템플레이트의 제조 방법 - Google Patents

마스크 블랭크, 위상 쉬프트 마스크의 제조 방법 및 템플레이트의 제조 방법 Download PDF

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KR100775382B1
KR100775382B1 KR1020050047132A KR20050047132A KR100775382B1 KR 100775382 B1 KR100775382 B1 KR 100775382B1 KR 1020050047132 A KR1020050047132 A KR 1020050047132A KR 20050047132 A KR20050047132 A KR 20050047132A KR 100775382 B1 KR100775382 B1 KR 100775382B1
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South Korea
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pattern
film
mask
phase shift
thin film
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KR20060049495A (ko
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히데아키 미츄이
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
KR1020050047132A 2004-06-02 2005-06-02 마스크 블랭크, 위상 쉬프트 마스크의 제조 방법 및 템플레이트의 제조 방법 Expired - Fee Related KR100775382B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004164956A JP4619043B2 (ja) 2004-06-02 2004-06-02 位相シフトマスクの製造方法及びテンプレートの製造方法
JPJP-P-2004-00164956 2004-06-02

Publications (2)

Publication Number Publication Date
KR20060049495A KR20060049495A (ko) 2006-05-19
KR100775382B1 true KR100775382B1 (ko) 2007-11-12

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KR1020050047132A Expired - Fee Related KR100775382B1 (ko) 2004-06-02 2005-06-02 마스크 블랭크, 위상 쉬프트 마스크의 제조 방법 및 템플레이트의 제조 방법

Country Status (5)

Country Link
US (1) US20050277034A1 (enExample)
JP (1) JP4619043B2 (enExample)
KR (1) KR100775382B1 (enExample)
DE (1) DE102005025398A1 (enExample)
TW (1) TWI277826B (enExample)

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US8142850B2 (en) * 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
JP5294227B2 (ja) * 2006-09-15 2013-09-18 Ｈｏｙａ株式会社 マスクブランク及び転写マスクの製造方法
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JP2009053575A (ja) * 2007-08-29 2009-03-12 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP2009058877A (ja) * 2007-09-03 2009-03-19 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP2009075207A (ja) * 2007-09-19 2009-04-09 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP5332161B2 (ja) * 2007-09-19 2013-11-06 凸版印刷株式会社 インプリントモールド、インプリントモールド製造方法
JP2009080421A (ja) * 2007-09-27 2009-04-16 Hoya Corp マスクブランク、及びインプリント用モールドの製造方法
CN101809499B (zh) * 2007-09-27 2012-10-10 Hoya株式会社 掩模坯体以及压印用模具的制造方法
KR100947442B1 (ko) * 2007-11-20 2010-03-12 삼성모바일디스플레이주식회사 수직 증착형 마스크 제조장치 및 이를 이용한 수직 증착형마스크의 제조방법
JP5221168B2 (ja) * 2008-02-28 2013-06-26 Ｈｏｙａ株式会社 インプリントモールド用マスクブランク及びインプリントモールドの製造方法
JP2009206339A (ja) * 2008-02-28 2009-09-10 Hoya Corp インプリントモールド用マスクブランク及びインプリントモールドの製造方法
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JP5345333B2 (ja) 2008-03-31 2013-11-20 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP5530075B2 (ja) 2008-03-31 2014-06-25 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びこれらの製造方法
JP5615488B2 (ja) * 2008-06-30 2014-10-29 Hoya株式会社 位相シフトマスクの製造方法
KR101095678B1 (ko) 2008-09-04 2011-12-19 주식회사 하이닉스반도체 크롬리스 위상반전마스크의 제조 방법
KR101492071B1 (ko) * 2008-09-19 2015-02-10 삼성전자 주식회사 나노 임프린트를 이용한 패턴 성형방법과 패턴 성형을 위한몰드 제작방법
JP5510947B2 (ja) * 2008-09-19 2014-06-04 Ｈｏｙａ株式会社 フォトマスクの製造方法およびフォトマスク
JP5368392B2 (ja) 2010-07-23 2013-12-18 信越化学工業株式会社 電子線用レジスト膜及び有機導電性膜が積層された被加工基板、該被加工基板の製造方法、及びレジストパターンの形成方法
JP2012078553A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd クロムレス位相シフトマスク及びクロムレス位相シフトマスクの製造方法
US20140113020A1 (en) * 2011-04-06 2014-04-24 Hoya Corporation Mold manufacturing mask blanks and method of manufacturing mold
JP4930737B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクブランク及びバイナリーマスクの製造方法
JP4930736B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスク
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
US20140234468A1 (en) * 2011-09-30 2014-08-21 Hoya Corporation Mold blank, master mold, method of manufacturing copy mold and mold blank
WO2013111631A1 (ja) * 2012-01-23 2013-08-01 旭硝子株式会社 ナノインプリントモールド用ブランク、ナノインプリントモールドおよびそれらの製造方法
KR101624435B1 (ko) * 2012-02-15 2016-05-25 다이니폰 인사츠 가부시키가이샤 위상 시프트 마스크 및 그 위상 시프트 마스크를 사용한 레지스트 패턴 형성 방법
JP5944436B2 (ja) * 2014-05-29 2016-07-05 大日本印刷株式会社 パターンの形成方法およびテンプレートの製造方法
JP5853071B2 (ja) * 2014-08-12 2016-02-09 Hoya株式会社 モールド製造用マスクブランクスおよびモールド製造用レジスト付きマスクブランクス
WO2016129225A1 (ja) * 2015-02-10 2016-08-18 富士フイルム株式会社 パターン形成マスク用薄膜層付基体およびパターン化基体の製造方法
KR102624985B1 (ko) * 2016-07-26 2024-01-16 삼성전자주식회사 마스크 블랭크, 위상 시프트 마스크 및 그 제조방법
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Publication number Publication date
US20050277034A1 (en) 2005-12-15
TW200604728A (en) 2006-02-01
JP4619043B2 (ja) 2011-01-26
KR20060049495A (ko) 2006-05-19
TWI277826B (en) 2007-04-01
JP2005345737A (ja) 2005-12-15
DE102005025398A1 (de) 2006-04-20

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