KR100769405B1 - 패턴 형성 방법 - Google Patents

패턴 형성 방법 Download PDF

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Publication number
KR100769405B1
KR100769405B1 KR1020060085053A KR20060085053A KR100769405B1 KR 100769405 B1 KR100769405 B1 KR 100769405B1 KR 1020060085053 A KR1020060085053 A KR 1020060085053A KR 20060085053 A KR20060085053 A KR 20060085053A KR 100769405 B1 KR100769405 B1 KR 100769405B1
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KR
South Korea
Prior art keywords
film
coating
resist
pattern
resist film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020060085053A
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English (en)
Korean (ko)
Other versions
KR20070027454A (ko
Inventor
겐지 지바
히로까즈 가또
Original Assignee
가부시끼가이샤 도시바
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Publication date
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Publication of KR20070027454A publication Critical patent/KR20070027454A/ko
Application granted granted Critical
Publication of KR100769405B1 publication Critical patent/KR100769405B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
KR1020060085053A 2005-09-06 2006-09-05 패턴 형성 방법 Expired - Fee Related KR100769405B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00258128 2005-09-06
JP2005258128A JP2007073684A (ja) 2005-09-06 2005-09-06 パターン形成方法

Publications (2)

Publication Number Publication Date
KR20070027454A KR20070027454A (ko) 2007-03-09
KR100769405B1 true KR100769405B1 (ko) 2007-10-22

Family

ID=37934888

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060085053A Expired - Fee Related KR100769405B1 (ko) 2005-09-06 2006-09-05 패턴 형성 방법

Country Status (4)

Country Link
US (1) US7638267B2 (https=)
JP (1) JP2007073684A (https=)
KR (1) KR100769405B1 (https=)
TW (1) TW200721255A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008100419A (ja) * 2006-10-18 2008-05-01 Nippon Telegr & Teleph Corp <Ntt> 微細構造作製方法及び装置
JP5096860B2 (ja) * 2007-10-04 2012-12-12 パナソニック株式会社 パターン形成方法
JP2010118501A (ja) * 2008-11-13 2010-05-27 Toshiba Corp 半導体装置の製造方法
JP5622512B2 (ja) * 2010-10-06 2014-11-12 株式会社東芝 半導体装置の製造方法
JP2014153665A (ja) * 2013-02-13 2014-08-25 Toshiba Corp マスク形成用材料および半導体装置の製造方法
JP6675160B2 (ja) * 2015-07-06 2020-04-01 Hoya株式会社 インプリント用モールドの製造方法、及びパターン基板の製造方法
JP2017058627A (ja) * 2015-09-18 2017-03-23 株式会社日本触媒 感光性樹脂組成物及びその硬化膜
US10672619B2 (en) * 2016-12-15 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010092385A (ko) * 2000-03-21 2001-10-24 마찌다 가쯔히꼬 패턴의 형성방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268427A (ja) 1990-03-19 1991-11-29 Hitachi Ltd 有機樹脂膜のパターン形成方法及び多層配線基板の製造方法
JP3218814B2 (ja) * 1993-08-03 2001-10-15 株式会社日立製作所 半導体装置の製造方法
JP3660280B2 (ja) 2001-07-30 2005-06-15 株式会社半導体先端テクノロジーズ 微細レジストパターンの形成方法
JP3476080B2 (ja) * 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
US6551938B1 (en) * 2002-01-25 2003-04-22 Taiwon Semiconductor Manufacturing Company N2/H2 chemistry for dry development in top surface imaging technology
JP3611248B2 (ja) * 2002-04-10 2005-01-19 東京応化工業株式会社 微細パターンの形成方法
JP3698688B2 (ja) * 2002-06-26 2005-09-21 東京応化工業株式会社 微細パターンの形成方法
JP4104117B2 (ja) * 2002-08-21 2008-06-18 東京応化工業株式会社 微細パターンの形成方法
JPWO2004111734A1 (ja) * 2003-06-11 2006-07-20 東京応化工業株式会社 ポジ型レジスト組成物、レジスト積層体、およびレジストパターン形成方法
JP4233091B2 (ja) * 2003-11-19 2009-03-04 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP4016009B2 (ja) 2004-03-24 2007-12-05 株式会社東芝 パターン形成方法及び半導体装置の製造方法
JP4370978B2 (ja) * 2004-05-31 2009-11-25 Ｊｓｒ株式会社 パターン形成方法及び半導体装置の製造方法
JP4535374B2 (ja) * 2004-08-20 2010-09-01 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP4549902B2 (ja) * 2005-03-14 2010-09-22 東京応化工業株式会社 ポジ型レジスト組成物、積層体、レジストパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010092385A (ko) * 2000-03-21 2001-10-24 마찌다 가쯔히꼬 패턴의 형성방법

Also Published As

Publication number Publication date
JP2007073684A (ja) 2007-03-22
KR20070027454A (ko) 2007-03-09
TW200721255A (en) 2007-06-01
US20070105054A1 (en) 2007-05-10
US7638267B2 (en) 2009-12-29
TWI324791B (https=) 2010-05-11

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