KR100739273B1 - 레지스트 하층막용 조성물 및 그의 제조 방법 - Google Patents
레지스트 하층막용 조성물 및 그의 제조 방법 Download PDFInfo
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- KR100739273B1 KR100739273B1 KR1020000018806A KR20000018806A KR100739273B1 KR 100739273 B1 KR100739273 B1 KR 100739273B1 KR 1020000018806 A KR1020000018806 A KR 1020000018806A KR 20000018806 A KR20000018806 A KR 20000018806A KR 100739273 B1 KR100739273 B1 KR 100739273B1
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
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- G03F7/004—Photosensitive materials
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- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G03F7/004—Photosensitive materials
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- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
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- G03F7/004—Photosensitive materials
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- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
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- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
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Abstract
Description
Claims (19)
- (A) 하기 화학식 1로 표시되는 화합물로 이루어지는 군에서 선택되는 1종 이상의 화합물의 가수 분해물 및 축합물 또는 이들 중 어느 하나, 및(B) 자외광 조사, 가열 또는 양자 모두에 의해 산을 발생하는 화합물을 함유하는 것을 특징으로 하는 레지스트 하층막용 조성물.<화학식 1>R1 aSi(0R2)4-a식 중,R1은 수소 원자, 불소 원자 또는 1가의 유기기를 나타내고,R2는 1가의 유기기를 나타내고,a는 0 내지 3의 정수를 나타낸다.
- 제1항에 있어서, (A) 성분이 (al) 하기 화학식 3으로 표시되는 화합물의 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나인 레지스트 하층막용 조성물.<화학식 3>Si(0R2)4식 중, R2는 1가의 유기기를 나타낸다.
- 제2항에 있어서, (A) 성분으로서 (a2) 하기 화학식 4로 표시되는 화합물을 포함하는 실란 화합물의 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나를 더 함유하는 레지스트 하층막용 조성물.<화학식 4>R1 nSi(0R2)4-n식 중,R1 및 R2는 서로 동일하거나 또는 상이할 수 있으며, 각각 1가의 유기기를 나타내고,n은 1 내지 3의 정수를 나타낸다.
- 제3항에 있어서, (al) 성분의 함유량(완전 가수 분해 축합물 환산) 100 중량부에 대하여 (a2) 성분의 함유량(완전 가수 분해 축합물 환산)이 0.5 내지 50 중량부인 레지스트 하층막용 조성물.
- 제2항에 있어서, (al) 성분이 테트라메톡시실란 및 테트라에톡시실란 또는 이들 중 어느 하나인 레지스트 하층막용 조성물.
- 제3항에 있어서, (a2) 성분이 메틸트리메톡시실란, 메틸트리에톡시실란, 디메틸디메톡시실란 및 디메틸디에톡시실란으로 이루어지는 군에서 선택된 1종 이상인 레지스트 하층막용 조성물.
- 제1항에 있어서, (B) 성분이 오늄염계 열산 발생제류, 오늄염계 광산 발생제류, 할로겐 함유 화합물계 광산 발생제류, 디아조케톤 화합물계 광산 발생제류, 술 폰 화합물계 광산 발생제류 및 술폰산 화합물계 광산 발생제류로 이루어지는 군에서 선택된 1종 이상인 레지스트 하층막용 조성물.
- 제1항에 있어서, (A) 성분(완전 가수 분해 축합물 환산) 100 중량부에 대하여 (B) 성분의 함유량이 1 내지 30 중량부인 레지스트 하층막용 조성물.
- 제1항에 있어서, 유기 용제로서 하기 화학식 5로 표시되는 화합물을 더 함유하는 레지스트 하층막용 조성물.<화학식 5>R80(Rl00)eR9식 중,R8 및 R9는 각각 독립적으로 수소 원자, 탄소수 1 내지 4의 알킬기 또는 CH3C0-에서 선택되는 1가의 유기기를 나타내고,R10은 탄소수 2 내지 4의 알킬렌기를 나타내고,e는 1 또는 2의 정수를 나타낸다.
- 제9항에 있어서, 상기 화학식 5로 표시되는 화합물이 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로 필렌글리콜모노이소프로필에테르 및 프로필렌글리콜모노부틸에테르로 이루어지는 군에서 선택된 1종 이상인 레지스트 하층막용 조성물.
- 제1항에 있어서, 조성물 총량 100 중량부에 대하여 물 0.2 내지 10 중량부를 더 함유하는 레지스트 하층막용 조성물.
- 제1항에 있어서, 비점 100 ℃ 이하의 알코올 함량이 2 중량% 이하인 레지스트 하층막용 조성물.
- 제1항에 있어서, 나트륨 및 철의 함량이 20 ppb 이하인 레지스트 하층막용 조성물.
- (A) 하기 화학식 1로 표시되는 화합물로 이루어지는 군에서 선택되는 1종 이상의 화합물에, 상기 화학식 1로 표시되는 화합물이 갖는 알콕실기의 합계 1몰 당 0.25 내지 3 몰의 물을 첨가하고, 가수 분해, 축합시킨 후 (B) 자외광 조사, 가열 또는 양자 모두에 의해 산을 발생하는 화합물을 첨가하는 것을 특징으로 하는 레지스트 하층막용 조성물의 제조 방법.<화학식 1>R1 aSi(0R2)4-a식 중,R1은 수소 원자, 불소 원자 또는 1가의 유기기를 나타내고,R2는 1가의 유기기를 나타내고,a는 0 내지 3의 정수를 나타낸다.
- 제14항에 있어서, 상기 (A) 성분으로서 하기 화학식 3으로 표시되는 화합물 의 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나와, 하기 화학식 4로 표시되는 화합물의 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나를 혼합하여 사용하는 레지스트 하층막용 조성물의 제조 방법.<화학식 3>Si(0R2)4식 중, R2는 1가의 유기기를 나타낸다.<화학식 4>R1 nSi(0R2)4-n식 중,R1 및 R2는 서로 동일하거나 또는 상이할 수 있으며, 각각 1가의 유기기를 나타내고,n은 1 내지 3의 정수를 나타낸다.
- 제14항에 있어서, 상기 (A) 성분으로서 하기 화학식 3으로 표시되는 화합물의 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나와, 하기 화학식 3으로 표시되는 화합물 및 하기 화학식 4로 표시되는 화합물을 혼합한 후에 가수 분해, 축합한 가수 분해물 및 그의 축합물 또는 이들 중 어느 하나를 혼합하여 사용하는 레지스트 하층막용 조성물의 제조 방법.<화학식 3>Si(0R2)4식 중, R2는 1가의 유기기를 나타낸다.<화학식 4>R1 nSi(0R2)4-n식 중,R1 및 R2는 서로 동일하거나 또는 상이할 수 있으며, 각각 1가의 유기기를 나타내고,n은 1 내지 3의 정수를 나타낸다.
- 제14항에 있어서, 하기 화학식 5로 표시되는 용제의 존재하에서 상기 (A) 성분의 가수 분해, 축합을 행하는 레지스트 하층막용 조성물의 제조 방법.<화학식 5>R80(Rl00)eR9식 중,R8 및 R9는 각각 독립적으로 수소 원자, 탄소수 1 내지 4의 알킬기 또는 CH3C0-에서 선택되는 1가의 유기기를 나타내고,R10은 탄소수 2 내지 4의 알킬렌기를 나타내고,e는 1 또는 2의 정수를 나타낸다.
- 제14항에 있어서, 하기 화학식 6으로 표시되는 금속 킬레이트 화합물, 유기산, 무기산, 유기 염기, 무기 염기로 이루어지는 군에서 선택된 1종 이상의 촉매의 존재하에서 상기 (A) 성분의 가수 분해, 축합을 행하는 레지스트 하층막용 조성물의 제조 방법.<화학식 6>R11 fM(0R12)g-f식 중,Rl1은 킬레이트제, M은 금속 원자, R12는 탄소수 2 내지 5의 알킬기 또는 탄소수 6 내지 20의 아릴기를 나타내고,g는 금속 M의 원자가, f는 1 내지 g의 정수를 나타낸다.
- 제18항에 있어서, 상기 촉매가 티탄, 알루미늄 또는 지르코늄의 킬레이트 화합물 또는 유기산인 레지스트 하층막용 조성물의 제조 방법.
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JP99-163215 | 1999-06-10 |
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EP (1) | EP1045290B1 (ko) |
JP (1) | JP4096138B2 (ko) |
KR (1) | KR100739273B1 (ko) |
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DE60026635D1 (de) | 2006-05-11 |
US6576393B1 (en) | 2003-06-10 |
KR20000077018A (ko) | 2000-12-26 |
EP1045290A3 (en) | 2002-02-06 |
JP4096138B2 (ja) | 2008-06-04 |
EP1045290A2 (en) | 2000-10-18 |
JP2000356854A (ja) | 2000-12-26 |
EP1045290B1 (en) | 2006-03-15 |
TWI249081B (en) | 2006-02-11 |
DE60026635T2 (de) | 2006-10-05 |
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