KR100822138B1 - 듀얼 다마신 구조의 형성 방법 - Google Patents
듀얼 다마신 구조의 형성 방법 Download PDFInfo
- Publication number
- KR100822138B1 KR100822138B1 KR1020020016962A KR20020016962A KR100822138B1 KR 100822138 B1 KR100822138 B1 KR 100822138B1 KR 1020020016962 A KR1020020016962 A KR 1020020016962A KR 20020016962 A KR20020016962 A KR 20020016962A KR 100822138 B1 KR100822138 B1 KR 100822138B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- dual damascene
- bis
- damascene structure
- sec
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000009977 dual effect Effects 0.000 title claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 31
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 29
- 230000009477 glass transition Effects 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 36
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 229910052726 zirconium Inorganic materials 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 23
- -1 polysiloxane Polymers 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000003960 organic solvent Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 150000004703 alkoxides Chemical class 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 4
- 229920000412 polyarylene Polymers 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 230000003301 hydrolyzing effect Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 229920002577 polybenzoxazole Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 43
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 230000008569 process Effects 0.000 description 22
- 239000010936 titanium Substances 0.000 description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 21
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 21
- 239000007983 Tris buffer Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 125000000962 organic group Chemical group 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 239000013522 chelant Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 150000007524 organic acids Chemical class 0.000 description 6
- AMUZLNGQQFNPTQ-UHFFFAOYSA-J 3-oxohexanoate zirconium(4+) Chemical compound [Zr+4].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O AMUZLNGQQFNPTQ-UHFFFAOYSA-J 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000005456 alcohol based solvent Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 4
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 4
- 239000011976 maleic acid Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000010 aprotic solvent Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000007859 condensation product Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000003759 ester based solvent Substances 0.000 description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 239000005453 ketone based solvent Substances 0.000 description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 2
- FEWLNYSYJNLUOO-UHFFFAOYSA-N 1-Piperidinecarboxaldehyde Chemical compound O=CN1CCCCC1 FEWLNYSYJNLUOO-UHFFFAOYSA-N 0.000 description 2
- KDISMIMTGUMORD-UHFFFAOYSA-N 1-acetylpiperidine Chemical compound CC(=O)N1CCCCC1 KDISMIMTGUMORD-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- NOMOPRKYOOSZKV-UHFFFAOYSA-N 2-(diethoxymethylsilyl)ethyl-triethoxysilane Chemical compound CCOC(OCC)[SiH2]CC[Si](OCC)(OCC)OCC NOMOPRKYOOSZKV-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- HITBDIPWYKTHIH-UHFFFAOYSA-N 2-[diethoxy(methyl)silyl]ethyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(OCC)CC[Si](C)(OCC)OCC HITBDIPWYKTHIH-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 2
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 2
- IBEWEPDJZBCHBL-UHFFFAOYSA-K 3-oxohexanoate titanium(3+) Chemical compound [Ti+3].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O IBEWEPDJZBCHBL-UHFFFAOYSA-K 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- OMSXLDKDBUFAFW-UHFFFAOYSA-M C(C)CC(CC(=O)[O-])=O.[Ti+] Chemical compound C(C)CC(CC(=O)[O-])=O.[Ti+] OMSXLDKDBUFAFW-UHFFFAOYSA-M 0.000 description 2
- ATYUKIGQFAGPOB-UHFFFAOYSA-N CCOC(OCC)[SiH2]C[Si](OCC)(OCC)OCC Chemical compound CCOC(OCC)[SiH2]C[Si](OCC)(OCC)OCC ATYUKIGQFAGPOB-UHFFFAOYSA-N 0.000 description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- PMDCZENCAXMSOU-UHFFFAOYSA-N N-ethylacetamide Chemical compound CCNC(C)=O PMDCZENCAXMSOU-UHFFFAOYSA-N 0.000 description 2
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N Valeric acid Natural products CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- GOIMHNOVDKMBEW-UHFFFAOYSA-M [Zr+].C(C)CC(CC(=O)[O-])=O Chemical compound [Zr+].C(C)CC(CC(=O)[O-])=O GOIMHNOVDKMBEW-UHFFFAOYSA-M 0.000 description 2
- VPLIEAVLKBXZCM-UHFFFAOYSA-N [diethoxy(methyl)silyl]-diethoxy-methylsilane Chemical compound CCO[Si](C)(OCC)[Si](C)(OCC)OCC VPLIEAVLKBXZCM-UHFFFAOYSA-N 0.000 description 2
- OPHLEQJKSDAYRR-UHFFFAOYSA-N [diethoxy(methyl)silyl]oxy-diethoxy-methylsilane Chemical compound CCO[Si](C)(OCC)O[Si](C)(OCC)OCC OPHLEQJKSDAYRR-UHFFFAOYSA-N 0.000 description 2
- BOXVSHDJQLZMFJ-UHFFFAOYSA-N [dimethoxy(methyl)silyl]-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)[Si](C)(OC)OC BOXVSHDJQLZMFJ-UHFFFAOYSA-N 0.000 description 2
- JWVHPGDCFVOYMQ-UHFFFAOYSA-N [dimethoxy(methyl)silyl]oxy-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)O[Si](C)(OC)OC JWVHPGDCFVOYMQ-UHFFFAOYSA-N 0.000 description 2
- ZEJSBRIMTYSOIH-UHFFFAOYSA-N [dimethoxy(phenyl)silyl]-dimethoxy-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)[Si](OC)(OC)C1=CC=CC=C1 ZEJSBRIMTYSOIH-UHFFFAOYSA-N 0.000 description 2
- KCCVBXQGWAXUSD-UHFFFAOYSA-N [dimethoxy(phenyl)silyl]oxy-dimethoxy-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)O[Si](OC)(OC)C1=CC=CC=C1 KCCVBXQGWAXUSD-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012295 chemical reaction liquid Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- DDRJAANPRJIHGJ-UHFFFAOYSA-N creatinine Chemical compound CN1CC(=O)NC1=N DDRJAANPRJIHGJ-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 2
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 2
- NYROPPYCYUGLLK-UHFFFAOYSA-N diethoxymethyl(diethoxymethylsilylmethyl)silane Chemical compound CCOC(OCC)[SiH2]C[SiH2]C(OCC)OCC NYROPPYCYUGLLK-UHFFFAOYSA-N 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- ZPILIIPBPKDNTR-UHFFFAOYSA-N dimethoxymethyl(dimethoxymethylsilylmethyl)silane Chemical compound COC(OC)[SiH2]C[SiH2]C(OC)OC ZPILIIPBPKDNTR-UHFFFAOYSA-N 0.000 description 2
- CNMKFNVCPOVSIU-UHFFFAOYSA-N dimethoxymethyl-[2-(dimethoxymethylsilyl)ethyl]silane Chemical compound COC(OC)[SiH2]CC[SiH2]C(OC)OC CNMKFNVCPOVSIU-UHFFFAOYSA-N 0.000 description 2
- AKPOQTZQHIWYJM-UHFFFAOYSA-N dimethoxymethylsilylmethyl(trimethoxy)silane Chemical compound COC(OC)[SiH2]C[Si](OC)(OC)OC AKPOQTZQHIWYJM-UHFFFAOYSA-N 0.000 description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- GWIVSKPSMYHUAK-UHFFFAOYSA-N ethoxy-[ethoxy(dimethyl)silyl]-dimethylsilane Chemical compound CCO[Si](C)(C)[Si](C)(C)OCC GWIVSKPSMYHUAK-UHFFFAOYSA-N 0.000 description 2
- NPOYZXWZANURMM-UHFFFAOYSA-N ethoxy-[ethoxy(dimethyl)silyl]oxy-dimethylsilane Chemical compound CCO[Si](C)(C)O[Si](C)(C)OCC NPOYZXWZANURMM-UHFFFAOYSA-N 0.000 description 2
- GPCIFOPQYZCLTR-UHFFFAOYSA-N ethoxy-[ethoxy(diphenyl)silyl]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si]([Si](OCC)(C=1C=CC=CC=1)C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 GPCIFOPQYZCLTR-UHFFFAOYSA-N 0.000 description 2
- QRZBTGCXOVMETC-UHFFFAOYSA-N ethoxy-[ethoxy(diphenyl)silyl]oxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)O[Si](OCC)(C=1C=CC=CC=1)C1=CC=CC=C1 QRZBTGCXOVMETC-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- GJRQTCIYDGXPES-UHFFFAOYSA-N isobutyl acetate Chemical compound CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropyl acetate Chemical compound CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- CWGBHCIGKSXFED-UHFFFAOYSA-N methoxy-[methoxy(dimethyl)silyl]-dimethylsilane Chemical compound CO[Si](C)(C)[Si](C)(C)OC CWGBHCIGKSXFED-UHFFFAOYSA-N 0.000 description 2
- XKINWJBZPLWKCW-UHFFFAOYSA-N methoxy-[methoxy(dimethyl)silyl]oxy-dimethylsilane Chemical compound CO[Si](C)(C)O[Si](C)(C)OC XKINWJBZPLWKCW-UHFFFAOYSA-N 0.000 description 2
- CEXMDIMEZILRLH-UHFFFAOYSA-N methoxy-[methoxy(diphenyl)silyl]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si]([Si](OC)(C=1C=CC=CC=1)C=1C=CC=CC=1)(OC)C1=CC=CC=C1 CEXMDIMEZILRLH-UHFFFAOYSA-N 0.000 description 2
- CDHRQJOOOVAAFQ-UHFFFAOYSA-N methoxy-[methoxy(diphenyl)silyl]oxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OC)O[Si](OC)(C=1C=CC=CC=1)C1=CC=CC=C1 CDHRQJOOOVAAFQ-UHFFFAOYSA-N 0.000 description 2
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 2
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 2
- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 description 2
- AHQDZKRRVNGIQL-UHFFFAOYSA-N methyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](C)(OC(C)(C)C)OC(C)(C)C AHQDZKRRVNGIQL-UHFFFAOYSA-N 0.000 description 2
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- NSFXUCGTDFXHRK-UHFFFAOYSA-N propyl 3-oxohexaneperoxoate;titanium Chemical compound [Ti].CCCOOC(=O)CC(=O)CCC.CCCOOC(=O)CC(=O)CCC NSFXUCGTDFXHRK-UHFFFAOYSA-N 0.000 description 2
- PDWJQUIPTZSMQV-UHFFFAOYSA-N propyl 3-oxohexaneperoxoate;zirconium Chemical compound [Zr].CCCOOC(=O)CC(=O)CCC.CCCOOC(=O)CC(=O)CCC PDWJQUIPTZSMQV-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- IZRJPHXTEXTLHY-UHFFFAOYSA-N triethoxy(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC IZRJPHXTEXTLHY-UHFFFAOYSA-N 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 2
- NIINUVYELHEORX-UHFFFAOYSA-N triethoxy(triethoxysilylmethyl)silane Chemical compound CCO[Si](OCC)(OCC)C[Si](OCC)(OCC)OCC NIINUVYELHEORX-UHFFFAOYSA-N 0.000 description 2
- JIOGKDWMNMIDEY-UHFFFAOYSA-N triethoxy-(2-triethoxysilylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1[Si](OCC)(OCC)OCC JIOGKDWMNMIDEY-UHFFFAOYSA-N 0.000 description 2
- MRBRVZDGOJHHFZ-UHFFFAOYSA-N triethoxy-(3-triethoxysilylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC([Si](OCC)(OCC)OCC)=C1 MRBRVZDGOJHHFZ-UHFFFAOYSA-N 0.000 description 2
- YYJNCOSWWOMZHX-UHFFFAOYSA-N triethoxy-(4-triethoxysilylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C([Si](OCC)(OCC)OCC)C=C1 YYJNCOSWWOMZHX-UHFFFAOYSA-N 0.000 description 2
- GYTROFMCUJZKNA-UHFFFAOYSA-N triethyl triethoxysilyl silicate Chemical compound CCO[Si](OCC)(OCC)O[Si](OCC)(OCC)OCC GYTROFMCUJZKNA-UHFFFAOYSA-N 0.000 description 2
- JCGDCINCKDQXDX-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)CC[Si](OC)(OC)OC JCGDCINCKDQXDX-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- LMQGXNPPTQOGDG-UHFFFAOYSA-N trimethoxy(trimethoxysilyl)silane Chemical compound CO[Si](OC)(OC)[Si](OC)(OC)OC LMQGXNPPTQOGDG-UHFFFAOYSA-N 0.000 description 2
- DJYGUVIGOGFJOF-UHFFFAOYSA-N trimethoxy(trimethoxysilylmethyl)silane Chemical compound CO[Si](OC)(OC)C[Si](OC)(OC)OC DJYGUVIGOGFJOF-UHFFFAOYSA-N 0.000 description 2
- KNYWDHFOQZZIDQ-UHFFFAOYSA-N trimethoxy-(2-trimethoxysilylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1[Si](OC)(OC)OC KNYWDHFOQZZIDQ-UHFFFAOYSA-N 0.000 description 2
- KBFAHPBJNNSTGX-UHFFFAOYSA-N trimethoxy-(3-trimethoxysilylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC([Si](OC)(OC)OC)=C1 KBFAHPBJNNSTGX-UHFFFAOYSA-N 0.000 description 2
- YIRZROVNUPFFNZ-UHFFFAOYSA-N trimethoxy-(4-trimethoxysilylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=C([Si](OC)(OC)OC)C=C1 YIRZROVNUPFFNZ-UHFFFAOYSA-N 0.000 description 2
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- QDOHRQCMIFOPEY-UHFFFAOYSA-N tripropoxy(2-tripropoxysilylethyl)silane Chemical compound CCCO[Si](OCCC)(OCCC)CC[Si](OCCC)(OCCC)OCCC QDOHRQCMIFOPEY-UHFFFAOYSA-N 0.000 description 2
- NBAPKCYEEBMZDW-UHFFFAOYSA-N tripropoxy-(2-tripropoxysilylphenyl)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC=C1[Si](OCCC)(OCCC)OCCC NBAPKCYEEBMZDW-UHFFFAOYSA-N 0.000 description 2
- YMAKWPVRMIUZBP-UHFFFAOYSA-N tripropoxy-(3-tripropoxysilylphenyl)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC([Si](OCCC)(OCCC)OCCC)=C1 YMAKWPVRMIUZBP-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 1
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 description 1
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- PPNCOQHHSGMKGI-UHFFFAOYSA-N 1-cyclononyldiazonane Chemical compound C1CCCCCCCC1N1NCCCCCCC1 PPNCOQHHSGMKGI-UHFFFAOYSA-N 0.000 description 1
- NFDXQGNDWIPXQL-UHFFFAOYSA-N 1-cyclooctyldiazocane Chemical compound C1CCCCCCC1N1NCCCCCC1 NFDXQGNDWIPXQL-UHFFFAOYSA-N 0.000 description 1
- VPUAYOJTHRDUTK-UHFFFAOYSA-N 1-ethylpyrrole Chemical compound CCN1C=CC=C1 VPUAYOJTHRDUTK-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- GGYVTHJIUNGKFZ-UHFFFAOYSA-N 1-methylpiperidin-2-one Chemical compound CN1CCCCC1=O GGYVTHJIUNGKFZ-UHFFFAOYSA-N 0.000 description 1
- HUUPVABNAQUEJW-UHFFFAOYSA-N 1-methylpiperidin-4-one Chemical compound CN1CCC(=O)CC1 HUUPVABNAQUEJW-UHFFFAOYSA-N 0.000 description 1
- KYWXRBNOYGGPIZ-UHFFFAOYSA-N 1-morpholin-4-ylethanone Chemical compound CC(=O)N1CCOCC1 KYWXRBNOYGGPIZ-UHFFFAOYSA-N 0.000 description 1
- LNWWQYYLZVZXKS-UHFFFAOYSA-N 1-pyrrolidin-1-ylethanone Chemical compound CC(=O)N1CCCC1 LNWWQYYLZVZXKS-UHFFFAOYSA-N 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- KFBXUKHERGLHLG-UHFFFAOYSA-N 2,4-Nonanedione Chemical compound CCCCCC(=O)CC(C)=O KFBXUKHERGLHLG-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- ZKCAGDPACLOVBN-UHFFFAOYSA-N 2-(2-ethylbutoxy)ethanol Chemical compound CCC(CC)COCCO ZKCAGDPACLOVBN-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- VIKZXMQZDHWCNW-UHFFFAOYSA-N 2-(dipropoxymethylsilyl)ethyl-tripropoxysilane Chemical compound CCCOC(OCCC)[SiH2]CC[Si](OCCC)(OCCC)OCCC VIKZXMQZDHWCNW-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- HQLKZWRSOHTERR-UHFFFAOYSA-N 2-Ethylbutyl acetate Chemical compound CCC(CC)COC(C)=O HQLKZWRSOHTERR-UHFFFAOYSA-N 0.000 description 1
- GQKZRWSUJHVIPE-UHFFFAOYSA-N 2-Pentanol acetate Chemical compound CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- SDHQGBWMLCBNSM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]ethyl acetate Chemical compound COCCOCCOCCOC(C)=O SDHQGBWMLCBNSM-UHFFFAOYSA-N 0.000 description 1
- ZSHXCNNCEOGSAN-UHFFFAOYSA-N 2-[bis[(2-methylpropan-2-yl)oxy]methylsilyl]ethyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)OC(OC(C)(C)C)[SiH2]CC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C ZSHXCNNCEOGSAN-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- BRRVXFOKWJKTGG-UHFFFAOYSA-N 3,3,5-trimethylcyclohexanol Chemical compound CC1CC(O)CC(C)(C)C1 BRRVXFOKWJKTGG-UHFFFAOYSA-N 0.000 description 1
- PKNKULBDCRZSBT-UHFFFAOYSA-N 3,4,5-trimethylnonan-2-one Chemical compound CCCCC(C)C(C)C(C)C(C)=O PKNKULBDCRZSBT-UHFFFAOYSA-N 0.000 description 1
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 1
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- ZABMJAAATCDODB-UHFFFAOYSA-L 3-oxohexanoate;titanium(2+) Chemical compound [Ti+2].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O ZABMJAAATCDODB-UHFFFAOYSA-L 0.000 description 1
- CQKOAJVBVFKQOO-UHFFFAOYSA-L 3-oxohexanoate;zirconium(2+) Chemical compound [Zr+2].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O CQKOAJVBVFKQOO-UHFFFAOYSA-L 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- LSQARZALBDFYQZ-UHFFFAOYSA-N 4,4'-difluorobenzophenone Chemical compound C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 LSQARZALBDFYQZ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NUDSREQIJYWLRA-UHFFFAOYSA-N 4-[9-(4-hydroxy-3-methylphenyl)fluoren-9-yl]-2-methylphenol Chemical compound C1=C(O)C(C)=CC(C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=C(C)C(O)=CC=2)=C1 NUDSREQIJYWLRA-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- KHZGUWAFFHXZLC-UHFFFAOYSA-N 5-methylhexane-2,4-dione Chemical compound CC(C)C(=O)CC(C)=O KHZGUWAFFHXZLC-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- YLFWBWMXGDKFKN-UHFFFAOYSA-N CC(C)(C)OC(OC(C)(C)C)[SiH2]C[SiH2]C(OC(C)(C)C)OC(C)(C)C Chemical compound CC(C)(C)OC(OC(C)(C)C)[SiH2]C[SiH2]C(OC(C)(C)C)OC(C)(C)C YLFWBWMXGDKFKN-UHFFFAOYSA-N 0.000 description 1
- DXPGPQOTKBQMME-UHFFFAOYSA-N CCCCOC(OCCCC)[SiH2]CC[SiH2]C(OCCCC)OCCCC Chemical compound CCCCOC(OCCCC)[SiH2]CC[SiH2]C(OCCCC)OCCCC DXPGPQOTKBQMME-UHFFFAOYSA-N 0.000 description 1
- FTSXNQAMKOCDOV-UHFFFAOYSA-N CCCCOC(OCCCC)[SiH2]CC[Si](OCCCC)(OCCCC)OCCCC Chemical compound CCCCOC(OCCCC)[SiH2]CC[Si](OCCCC)(OCCCC)OCCCC FTSXNQAMKOCDOV-UHFFFAOYSA-N 0.000 description 1
- XSQIIUIRFLIGDK-UHFFFAOYSA-N CCCOC(OCCC)[SiH2]C[SiH2]C(OCCC)OCCC Chemical compound CCCOC(OCCC)[SiH2]C[SiH2]C(OCCC)OCCC XSQIIUIRFLIGDK-UHFFFAOYSA-N 0.000 description 1
- YRUQEAHQMALSGC-UHFFFAOYSA-N CCCOC(OCCC)[SiH2]C[Si](OCCC)(OCCC)OCCC Chemical compound CCCOC(OCCC)[SiH2]C[Si](OCCC)(OCCC)OCCC YRUQEAHQMALSGC-UHFFFAOYSA-N 0.000 description 1
- YSSSBLWXPKRDTH-UHFFFAOYSA-N COC(OC)[SiH2]CC[Si](OC)(OC)OC Chemical compound COC(OC)[SiH2]CC[Si](OC)(OC)OC YSSSBLWXPKRDTH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- HTLZVHNRZJPSMI-UHFFFAOYSA-N N-ethylpiperidine Chemical compound CCN1CCCCC1 HTLZVHNRZJPSMI-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- GSCOPSVHEGTJRH-UHFFFAOYSA-J [Ti+4].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O Chemical compound [Ti+4].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O GSCOPSVHEGTJRH-UHFFFAOYSA-J 0.000 description 1
- IUGGRDVCAVUMLN-UHFFFAOYSA-K [Zr+3].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O Chemical compound [Zr+3].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O IUGGRDVCAVUMLN-UHFFFAOYSA-K 0.000 description 1
- OUFYDWUSSNDJMC-UHFFFAOYSA-N [diethoxy(ethyl)silyl] triethyl silicate Chemical compound CCO[Si](CC)(OCC)O[Si](OCC)(OCC)OCC OUFYDWUSSNDJMC-UHFFFAOYSA-N 0.000 description 1
- CAGQGWQXRKAJFX-UHFFFAOYSA-N [diethoxy(ethyl)silyl]-diethoxy-ethylsilane Chemical compound CCO[Si](CC)(OCC)[Si](CC)(OCC)OCC CAGQGWQXRKAJFX-UHFFFAOYSA-N 0.000 description 1
- LTKGRHTYZMRFDC-UHFFFAOYSA-N [diethoxy(ethyl)silyl]oxy-diethoxy-ethylsilane Chemical compound CCO[Si](CC)(OCC)O[Si](CC)(OCC)OCC LTKGRHTYZMRFDC-UHFFFAOYSA-N 0.000 description 1
- RWJOZDOPYLCIII-UHFFFAOYSA-N [diethoxy(methyl)silyl] triethyl silicate Chemical compound CCO[Si](C)(OCC)O[Si](OCC)(OCC)OCC RWJOZDOPYLCIII-UHFFFAOYSA-N 0.000 description 1
- TUOVZLSNRINXRH-UHFFFAOYSA-N [diethoxy(phenyl)silyl] triethyl silicate Chemical compound CCO[Si](OCC)(OCC)O[Si](OCC)(OCC)C1=CC=CC=C1 TUOVZLSNRINXRH-UHFFFAOYSA-N 0.000 description 1
- DCEBXHSHURUJAY-UHFFFAOYSA-N [diethoxy(phenyl)silyl]-diethoxy-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)[Si](OCC)(OCC)C1=CC=CC=C1 DCEBXHSHURUJAY-UHFFFAOYSA-N 0.000 description 1
- KVOXQFWXJQZCJO-UHFFFAOYSA-N [diethyl(methoxy)silyl]-diethyl-methoxysilane Chemical compound CC[Si](CC)(OC)[Si](CC)(CC)OC KVOXQFWXJQZCJO-UHFFFAOYSA-N 0.000 description 1
- LPUZCHYKNYSFTM-UHFFFAOYSA-N [diethyl(methoxy)silyl]oxy-diethyl-methoxysilane Chemical compound CC[Si](CC)(OC)O[Si](CC)(CC)OC LPUZCHYKNYSFTM-UHFFFAOYSA-N 0.000 description 1
- ZXTUPVQBBCBASF-UHFFFAOYSA-N [diethyl(phenoxy)silyl]-diethyl-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](CC)(CC)[Si](CC)(CC)OC1=CC=CC=C1 ZXTUPVQBBCBASF-UHFFFAOYSA-N 0.000 description 1
- HCASOGIIUWUYBT-UHFFFAOYSA-N [diethyl(phenoxy)silyl]oxy-diethyl-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](CC)(CC)O[Si](CC)(CC)OC1=CC=CC=C1 HCASOGIIUWUYBT-UHFFFAOYSA-N 0.000 description 1
- KAYBCXGMQWDTPM-UHFFFAOYSA-N [dimethoxy(methyl)silyl] trimethyl silicate Chemical compound CO[Si](C)(OC)O[Si](OC)(OC)OC KAYBCXGMQWDTPM-UHFFFAOYSA-N 0.000 description 1
- OCOJQBCZDTYVGH-UHFFFAOYSA-N [dimethoxy(phenyl)silyl] trimethyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)C1=CC=CC=C1 OCOJQBCZDTYVGH-UHFFFAOYSA-N 0.000 description 1
- FJBYKPPJPGSLFX-UHFFFAOYSA-N [dimethyl(phenoxy)silyl]-dimethyl-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(C)[Si](C)(C)OC1=CC=CC=C1 FJBYKPPJPGSLFX-UHFFFAOYSA-N 0.000 description 1
- RJPCFFMEJWSVLK-UHFFFAOYSA-N [dimethyl(phenoxy)silyl]oxy-dimethyl-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(C)O[Si](C)(C)OC1=CC=CC=C1 RJPCFFMEJWSVLK-UHFFFAOYSA-N 0.000 description 1
- KGRRVFJMOKKXHY-UHFFFAOYSA-N [diphenoxy(phenyl)silyl] triphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)C=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 KGRRVFJMOKKXHY-UHFFFAOYSA-N 0.000 description 1
- JPMDJMXICBMIIB-UHFFFAOYSA-N [diphenoxy(phenyl)silyl]oxy-diphenoxy-phenylsilane Chemical compound C=1C=CC=CC=1O[Si](C=1C=CC=CC=1)(O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)C=1C=CC=CC=1)OC1=CC=CC=C1 JPMDJMXICBMIIB-UHFFFAOYSA-N 0.000 description 1
- GTERMDKMZQCDRP-UHFFFAOYSA-N [ethyl(dimethoxy)silyl] trimethyl silicate Chemical compound CC[Si](OC)(OC)O[Si](OC)(OC)OC GTERMDKMZQCDRP-UHFFFAOYSA-N 0.000 description 1
- ZLFZYLXOXHCFLI-UHFFFAOYSA-N [ethyl(diphenoxy)silyl] triphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 ZLFZYLXOXHCFLI-UHFFFAOYSA-N 0.000 description 1
- OTEZVXDZQVSYNT-UHFFFAOYSA-N [methyl(diphenoxy)silyl] triphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 OTEZVXDZQVSYNT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- JQICEOPIRHDDER-UHFFFAOYSA-N acetic acid;2-(2-methoxyethoxy)ethanol Chemical compound CC(O)=O.COCCOCCO JQICEOPIRHDDER-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- MQPPCKJJFDNPHJ-UHFFFAOYSA-K aluminum;3-oxohexanoate Chemical compound [Al+3].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O MQPPCKJJFDNPHJ-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- MDUKBVGQQFOMPC-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 MDUKBVGQQFOMPC-UHFFFAOYSA-M 0.000 description 1
- GEVFICDEOWFKDU-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]-di(propan-2-yl)silane Chemical compound CC(C)(C)O[Si](C(C)C)(OC(C)(C)C)C(C)C GEVFICDEOWFKDU-UHFFFAOYSA-N 0.000 description 1
- UQFDPFMHQDISLB-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC=C1 UQFDPFMHQDISLB-UHFFFAOYSA-N 0.000 description 1
- NZJRLFDIDIUMPD-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]-dipropylsilane Chemical compound CCC[Si](CCC)(OC(C)(C)C)OC(C)(C)C NZJRLFDIDIUMPD-UHFFFAOYSA-N 0.000 description 1
- DMAVYNCFCVFOQF-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]methyl-[2-[bis[(2-methylpropan-2-yl)oxy]methylsilyl]ethyl]silane Chemical compound CC(C)(C)OC(OC(C)(C)C)[SiH2]CC[SiH2]C(OC(C)(C)C)OC(C)(C)C DMAVYNCFCVFOQF-UHFFFAOYSA-N 0.000 description 1
- ZYFYSGNGFCIFNT-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]methylsilylmethyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)OC(OC(C)(C)C)[SiH2]C[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C ZYFYSGNGFCIFNT-UHFFFAOYSA-N 0.000 description 1
- 125000004799 bromophenyl group Chemical group 0.000 description 1
- DZYAEFOBWNGVMJ-UHFFFAOYSA-N butan-2-yl 3-oxohexaneperoxoate;titanium Chemical compound [Ti].CCCC(=O)CC(=O)OOC(C)CC.CCCC(=O)CC(=O)OOC(C)CC DZYAEFOBWNGVMJ-UHFFFAOYSA-N 0.000 description 1
- LVTRKEHNNCDSFT-UHFFFAOYSA-N butan-2-yl(tributoxy)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C(C)CC LVTRKEHNNCDSFT-UHFFFAOYSA-N 0.000 description 1
- LQJIYGHLYACICO-UHFFFAOYSA-N butan-2-yl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)CC LQJIYGHLYACICO-UHFFFAOYSA-N 0.000 description 1
- AMSAPKJTBARTTR-UHFFFAOYSA-N butan-2-yl(trimethoxy)silane Chemical compound CCC(C)[Si](OC)(OC)OC AMSAPKJTBARTTR-UHFFFAOYSA-N 0.000 description 1
- RONSXPITPXQAOB-UHFFFAOYSA-N butan-2-yl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C(C)CC)OC1=CC=CC=C1 RONSXPITPXQAOB-UHFFFAOYSA-N 0.000 description 1
- DNYVMXJXGNLANE-UHFFFAOYSA-N butan-2-yl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C(C)CC DNYVMXJXGNLANE-UHFFFAOYSA-N 0.000 description 1
- WZOUXCVLNZOLFT-UHFFFAOYSA-N butan-2-yl-tri(butan-2-yloxy)silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C(C)CC WZOUXCVLNZOLFT-UHFFFAOYSA-N 0.000 description 1
- TWWATCWHACTGNY-UHFFFAOYSA-N butan-2-yl-tri(propan-2-yloxy)silane Chemical compound CCC(C)[Si](OC(C)C)(OC(C)C)OC(C)C TWWATCWHACTGNY-UHFFFAOYSA-N 0.000 description 1
- MTJISXQZLVVFLZ-UHFFFAOYSA-N butan-2-yl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CCC(C)[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C MTJISXQZLVVFLZ-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- ZTWFYPYDXBYIAY-UHFFFAOYSA-N butyl 3-oxohexaneperoxoate;titanium Chemical compound [Ti].CCCCOOC(=O)CC(=O)CCC.CCCCOOC(=O)CC(=O)CCC ZTWFYPYDXBYIAY-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- OGCNPMTZBJEZKT-UHFFFAOYSA-N butyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCCC)OC1=CC=CC=C1 OGCNPMTZBJEZKT-UHFFFAOYSA-N 0.000 description 1
- GNRBSDIBKIHSJH-UHFFFAOYSA-N butyl(tripropoxy)silane Chemical compound CCCC[Si](OCCC)(OCCC)OCCC GNRBSDIBKIHSJH-UHFFFAOYSA-N 0.000 description 1
- OOWHVJAPAMPBEX-UHFFFAOYSA-N butyl-tri(propan-2-yloxy)silane Chemical compound CCCC[Si](OC(C)C)(OC(C)C)OC(C)C OOWHVJAPAMPBEX-UHFFFAOYSA-N 0.000 description 1
- ZOKYFXXILHWZHP-UHFFFAOYSA-N butyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CCCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C ZOKYFXXILHWZHP-UHFFFAOYSA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229940109239 creatinine Drugs 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- VTYMPZNKHJYGEH-UHFFFAOYSA-N di(butan-2-yl)-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CCC(C)[Si](OC(C)(C)C)(OC(C)(C)C)C(C)CC VTYMPZNKHJYGEH-UHFFFAOYSA-N 0.000 description 1
- ZDYWFCBPMBXAJR-UHFFFAOYSA-N di(butan-2-yl)-di(butan-2-yloxy)silane Chemical compound CCC(C)O[Si](C(C)CC)(C(C)CC)OC(C)CC ZDYWFCBPMBXAJR-UHFFFAOYSA-N 0.000 description 1
- SNEGIHORRGJSED-UHFFFAOYSA-N di(butan-2-yl)-di(propan-2-yloxy)silane Chemical compound CCC(C)[Si](OC(C)C)(OC(C)C)C(C)CC SNEGIHORRGJSED-UHFFFAOYSA-N 0.000 description 1
- RHPPDKHKHGQLHP-UHFFFAOYSA-N di(butan-2-yl)-dibutoxysilane Chemical compound CCCCO[Si](C(C)CC)(C(C)CC)OCCCC RHPPDKHKHGQLHP-UHFFFAOYSA-N 0.000 description 1
- VSLASQQLPGVYSK-UHFFFAOYSA-N di(butan-2-yl)-diethoxysilane Chemical compound CCO[Si](OCC)(C(C)CC)C(C)CC VSLASQQLPGVYSK-UHFFFAOYSA-N 0.000 description 1
- HVHRIKGOFGJBFM-UHFFFAOYSA-N di(butan-2-yl)-dimethoxysilane Chemical compound CCC(C)[Si](OC)(OC)C(C)CC HVHRIKGOFGJBFM-UHFFFAOYSA-N 0.000 description 1
- CUNCIGAMQTWZFC-UHFFFAOYSA-N di(butan-2-yl)-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C(C)CC)(C(C)CC)OC1=CC=CC=C1 CUNCIGAMQTWZFC-UHFFFAOYSA-N 0.000 description 1
- LAGUJICBGGFHSR-UHFFFAOYSA-N di(butan-2-yl)-dipropoxysilane Chemical compound CCCO[Si](C(C)CC)(C(C)CC)OCCC LAGUJICBGGFHSR-UHFFFAOYSA-N 0.000 description 1
- NTABREFATMHOMD-UHFFFAOYSA-N di(butan-2-yloxy)-di(propan-2-yl)silane Chemical compound CCC(C)O[Si](C(C)C)(C(C)C)OC(C)CC NTABREFATMHOMD-UHFFFAOYSA-N 0.000 description 1
- BRUBSFJFECVMDK-UHFFFAOYSA-N di(butan-2-yloxy)-dibutylsilane Chemical compound CCCC[Si](CCCC)(OC(C)CC)OC(C)CC BRUBSFJFECVMDK-UHFFFAOYSA-N 0.000 description 1
- UMFDNQISZRRQHX-UHFFFAOYSA-N di(butan-2-yloxy)-diethylsilane Chemical compound CCC(C)O[Si](CC)(CC)OC(C)CC UMFDNQISZRRQHX-UHFFFAOYSA-N 0.000 description 1
- DERJYZOBOMCDCS-UHFFFAOYSA-N di(butan-2-yloxy)-dimethylsilane Chemical compound CCC(C)O[Si](C)(C)OC(C)CC DERJYZOBOMCDCS-UHFFFAOYSA-N 0.000 description 1
- MCTLKEGMWAHKOY-UHFFFAOYSA-N di(butan-2-yloxy)-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](OC(C)CC)(OC(C)CC)C1=CC=CC=C1 MCTLKEGMWAHKOY-UHFFFAOYSA-N 0.000 description 1
- VMIHKBXLARWWKA-UHFFFAOYSA-N di(butan-2-yloxy)-dipropylsilane Chemical compound CCC(C)O[Si](CCC)(CCC)OC(C)CC VMIHKBXLARWWKA-UHFFFAOYSA-N 0.000 description 1
- YYBOVRLSYSVAKE-UHFFFAOYSA-N di(butan-2-yloxy)methyl-[2-[di(butan-2-yloxy)methylsilyl]ethyl]silane Chemical compound CCC(C)OC(OC(C)CC)[SiH2]CC[SiH2]C(OC(C)CC)OC(C)CC YYBOVRLSYSVAKE-UHFFFAOYSA-N 0.000 description 1
- DQVIFXQWYJRMSX-UHFFFAOYSA-N di(butan-2-yloxy)methyl-[di(butan-2-yloxy)methylsilylmethyl]silane Chemical compound CCC(C)OC(OC(C)CC)[SiH2]C[SiH2]C(OC(C)CC)OC(C)CC DQVIFXQWYJRMSX-UHFFFAOYSA-N 0.000 description 1
- XVCNAZQXIVBYAD-UHFFFAOYSA-N di(propan-2-yl)-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C(C)C)(C(C)C)OC(C)C XVCNAZQXIVBYAD-UHFFFAOYSA-N 0.000 description 1
- LLBLHAHQBJSHED-UHFFFAOYSA-N di(propan-2-yl)-dipropoxysilane Chemical compound CCCO[Si](C(C)C)(C(C)C)OCCC LLBLHAHQBJSHED-UHFFFAOYSA-N 0.000 description 1
- SHZPQCKUFYRFBI-UHFFFAOYSA-N di(propan-2-yloxy)-dipropylsilane Chemical compound CCC[Si](CCC)(OC(C)C)OC(C)C SHZPQCKUFYRFBI-UHFFFAOYSA-N 0.000 description 1
- 239000012973 diazabicyclooctane Substances 0.000 description 1
- URSLNVMUSKPBTL-UHFFFAOYSA-N dibutoxy(dibutyl)silane Chemical compound CCCCO[Si](CCCC)(CCCC)OCCCC URSLNVMUSKPBTL-UHFFFAOYSA-N 0.000 description 1
- MGQFVQQCNPBJKC-UHFFFAOYSA-N dibutoxy(diethyl)silane Chemical compound CCCCO[Si](CC)(CC)OCCCC MGQFVQQCNPBJKC-UHFFFAOYSA-N 0.000 description 1
- GQNWJCQWBFHQAO-UHFFFAOYSA-N dibutoxy(dimethyl)silane Chemical compound CCCCO[Si](C)(C)OCCCC GQNWJCQWBFHQAO-UHFFFAOYSA-N 0.000 description 1
- OSMIWEAIYFILPL-UHFFFAOYSA-N dibutoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCCCC)(OCCCC)C1=CC=CC=C1 OSMIWEAIYFILPL-UHFFFAOYSA-N 0.000 description 1
- BKGSSPASYNBWRR-UHFFFAOYSA-N dibutoxy(dipropyl)silane Chemical compound CCCCO[Si](CCC)(CCC)OCCCC BKGSSPASYNBWRR-UHFFFAOYSA-N 0.000 description 1
- JKCIXCWGOYSFPF-UHFFFAOYSA-N dibutoxy(ditert-butyl)silane Chemical compound CCCCO[Si](C(C)(C)C)(C(C)(C)C)OCCCC JKCIXCWGOYSFPF-UHFFFAOYSA-N 0.000 description 1
- WOMDWSFYXGEOTE-UHFFFAOYSA-N dibutoxy-di(propan-2-yl)silane Chemical compound CCCCO[Si](C(C)C)(C(C)C)OCCCC WOMDWSFYXGEOTE-UHFFFAOYSA-N 0.000 description 1
- CMFFHNDRVNQUAX-UHFFFAOYSA-N dibutoxymethyl(dibutoxymethylsilylmethyl)silane Chemical compound CCCCOC(OCCCC)[SiH2]C[SiH2]C(OCCCC)OCCCC CMFFHNDRVNQUAX-UHFFFAOYSA-N 0.000 description 1
- DGPFXVBYDAVXLX-UHFFFAOYSA-N dibutyl(diethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)CCCC DGPFXVBYDAVXLX-UHFFFAOYSA-N 0.000 description 1
- YPENMAABQGWRBR-UHFFFAOYSA-N dibutyl(dimethoxy)silane Chemical compound CCCC[Si](OC)(OC)CCCC YPENMAABQGWRBR-UHFFFAOYSA-N 0.000 description 1
- QDMXGHLVHDTPAA-UHFFFAOYSA-N dibutyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](CCCC)(CCCC)OC1=CC=CC=C1 QDMXGHLVHDTPAA-UHFFFAOYSA-N 0.000 description 1
- ZDJARFQAQIQMOG-UHFFFAOYSA-N dibutyl(dipropoxy)silane Chemical compound CCCC[Si](CCCC)(OCCC)OCCC ZDJARFQAQIQMOG-UHFFFAOYSA-N 0.000 description 1
- PYWGKTHCDIBIGL-UHFFFAOYSA-N dibutyl-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CCCC[Si](OC(C)(C)C)(OC(C)(C)C)CCCC PYWGKTHCDIBIGL-UHFFFAOYSA-N 0.000 description 1
- VNIJTNBFIJHUCJ-UHFFFAOYSA-N dibutyl-di(propan-2-yloxy)silane Chemical compound CCCC[Si](OC(C)C)(OC(C)C)CCCC VNIJTNBFIJHUCJ-UHFFFAOYSA-N 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- ORLLLMPDVVUYCB-UHFFFAOYSA-N diethoxy-[ethoxy(diethyl)silyl]-ethylsilane Chemical compound CCO[Si](CC)(CC)[Si](CC)(OCC)OCC ORLLLMPDVVUYCB-UHFFFAOYSA-N 0.000 description 1
- FVGOIYGMTRNIMF-UHFFFAOYSA-N diethoxy-[ethoxy(diethyl)silyl]oxy-ethylsilane Chemical compound CCO[Si](CC)(CC)O[Si](CC)(OCC)OCC FVGOIYGMTRNIMF-UHFFFAOYSA-N 0.000 description 1
- XWXBXCRTPJXEEE-UHFFFAOYSA-N diethoxy-[ethoxy(dimethyl)silyl]-methylsilane Chemical compound CCO[Si](C)(C)[Si](C)(OCC)OCC XWXBXCRTPJXEEE-UHFFFAOYSA-N 0.000 description 1
- MSGQAOMQUPZKKZ-UHFFFAOYSA-N diethoxy-[ethoxy(dimethyl)silyl]oxy-methylsilane Chemical compound CCO[Si](C)(C)O[Si](C)(OCC)OCC MSGQAOMQUPZKKZ-UHFFFAOYSA-N 0.000 description 1
- ONVNYOKOCHEBLL-UHFFFAOYSA-N diethoxy-[ethoxy(diphenyl)silyl]-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OCC)(C=1C=CC=CC=1)[Si](OCC)(OCC)C1=CC=CC=C1 ONVNYOKOCHEBLL-UHFFFAOYSA-N 0.000 description 1
- FUOAHWYJTIWPJN-UHFFFAOYSA-N diethoxy-[ethoxy(diphenyl)silyl]oxy-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)O[Si](OCC)(C=1C=CC=CC=1)C1=CC=CC=C1 FUOAHWYJTIWPJN-UHFFFAOYSA-N 0.000 description 1
- VVKJJEAEVBNODX-UHFFFAOYSA-N diethoxy-di(propan-2-yl)silane Chemical compound CCO[Si](C(C)C)(C(C)C)OCC VVKJJEAEVBNODX-UHFFFAOYSA-N 0.000 description 1
- ACWCVISBUXZNGU-UHFFFAOYSA-N diethoxy-ethyl-triethoxysilylsilane Chemical compound CCO[Si](CC)(OCC)[Si](OCC)(OCC)OCC ACWCVISBUXZNGU-UHFFFAOYSA-N 0.000 description 1
- DJLPTEGQDXDGQC-UHFFFAOYSA-N diethoxy-methyl-triethoxysilylsilane Chemical compound CCO[Si](C)(OCC)[Si](OCC)(OCC)OCC DJLPTEGQDXDGQC-UHFFFAOYSA-N 0.000 description 1
- ZKIPWOVPMGZJAE-UHFFFAOYSA-N diethoxy-phenyl-triethoxysilylsilane Chemical compound CCO[Si](OCC)(OCC)[Si](OCC)(OCC)C1=CC=CC=C1 ZKIPWOVPMGZJAE-UHFFFAOYSA-N 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- UFWOWQYGXPYINE-UHFFFAOYSA-N diethyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](CC)(CC)OC1=CC=CC=C1 UFWOWQYGXPYINE-UHFFFAOYSA-N 0.000 description 1
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 1
- SVEAHWYNNUEDST-UHFFFAOYSA-N diethyl-[ethyl(dimethoxy)silyl]-methoxysilane Chemical compound CC[Si](CC)(OC)[Si](CC)(OC)OC SVEAHWYNNUEDST-UHFFFAOYSA-N 0.000 description 1
- DBOVDBUCEBDCHO-UHFFFAOYSA-N diethyl-[ethyl(dimethoxy)silyl]oxy-methoxysilane Chemical compound CC[Si](CC)(OC)O[Si](CC)(OC)OC DBOVDBUCEBDCHO-UHFFFAOYSA-N 0.000 description 1
- IBJXDSONJWUISJ-UHFFFAOYSA-N diethyl-[ethyl(diphenoxy)silyl]-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](CC)(OC=1C=CC=CC=1)[Si](CC)(CC)OC1=CC=CC=C1 IBJXDSONJWUISJ-UHFFFAOYSA-N 0.000 description 1
- BOYJSEYGDJFASU-UHFFFAOYSA-N diethyl-[ethyl(diphenoxy)silyl]oxy-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](CC)(OC=1C=CC=CC=1)O[Si](CC)(CC)OC1=CC=CC=C1 BOYJSEYGDJFASU-UHFFFAOYSA-N 0.000 description 1
- HKAGYJNZCWXVCS-UHFFFAOYSA-N diethyl-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](CC)(CC)OC(C)(C)C HKAGYJNZCWXVCS-UHFFFAOYSA-N 0.000 description 1
- ZWPNXHXXRLYCHZ-UHFFFAOYSA-N diethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(CC)OC(C)C ZWPNXHXXRLYCHZ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 1
- YAMJSWINAOIAEK-UHFFFAOYSA-N dimethoxy(penta-1,4-dien-3-yloxy)silane Chemical compound C(=C)C(O[SiH](OC)OC)C=C YAMJSWINAOIAEK-UHFFFAOYSA-N 0.000 description 1
- ZYKMXPLFVHNTTQ-UHFFFAOYSA-N dimethoxy-[methoxy(dimethyl)silyl]-methylsilane Chemical compound CO[Si](C)(C)[Si](C)(OC)OC ZYKMXPLFVHNTTQ-UHFFFAOYSA-N 0.000 description 1
- OODQPDAIYZQAPM-UHFFFAOYSA-N dimethoxy-[methoxy(dimethyl)silyl]oxy-methylsilane Chemical compound CO[Si](C)(C)O[Si](C)(OC)OC OODQPDAIYZQAPM-UHFFFAOYSA-N 0.000 description 1
- UFVKUKOQUJOABJ-UHFFFAOYSA-N dimethoxy-[methoxy(diphenyl)silyl]-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OC)(C=1C=CC=CC=1)[Si](OC)(OC)C1=CC=CC=C1 UFVKUKOQUJOABJ-UHFFFAOYSA-N 0.000 description 1
- ZBLIADCAEOVUFG-UHFFFAOYSA-N dimethoxy-[methoxy(diphenyl)silyl]oxy-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)O[Si](OC)(C=1C=CC=CC=1)C1=CC=CC=C1 ZBLIADCAEOVUFG-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- ISRAHSWMKHSHAG-UHFFFAOYSA-N dimethoxy-methyl-trimethoxysilylsilane Chemical compound CO[Si](C)(OC)[Si](OC)(OC)OC ISRAHSWMKHSHAG-UHFFFAOYSA-N 0.000 description 1
- BRCDYPNDQTUZSL-UHFFFAOYSA-N dimethoxy-phenyl-trimethoxysilylsilane Chemical compound CO[Si](OC)(OC)[Si](OC)(OC)C1=CC=CC=C1 BRCDYPNDQTUZSL-UHFFFAOYSA-N 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- SWLVAJXQIOKFSJ-UHFFFAOYSA-N dimethyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](C)(C)OC1=CC=CC=C1 SWLVAJXQIOKFSJ-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- OAXCVGVJXLYDKZ-UHFFFAOYSA-N dimethyl-[methyl(diphenoxy)silyl]-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(OC=1C=CC=CC=1)[Si](C)(C)OC1=CC=CC=C1 OAXCVGVJXLYDKZ-UHFFFAOYSA-N 0.000 description 1
- JWXBGUAFHMLIRL-UHFFFAOYSA-N dimethyl-[methyl(diphenoxy)silyl]oxy-phenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(OC=1C=CC=CC=1)O[Si](C)(C)OC1=CC=CC=C1 JWXBGUAFHMLIRL-UHFFFAOYSA-N 0.000 description 1
- BGPNEHJZZDIFND-UHFFFAOYSA-N dimethyl-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](C)(C)OC(C)(C)C BGPNEHJZZDIFND-UHFFFAOYSA-N 0.000 description 1
- BPXCAJONOPIXJI-UHFFFAOYSA-N dimethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(C)OC(C)C BPXCAJONOPIXJI-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- YLDKQPMORVEBRU-UHFFFAOYSA-N diphenoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1O[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)OC1=CC=CC=C1 YLDKQPMORVEBRU-UHFFFAOYSA-N 0.000 description 1
- JFCVQVCWZYWWPV-UHFFFAOYSA-N diphenoxy(dipropyl)silane Chemical compound C=1C=CC=CC=1O[Si](CCC)(CCC)OC1=CC=CC=C1 JFCVQVCWZYWWPV-UHFFFAOYSA-N 0.000 description 1
- ZCLLMMBZLXTPCO-UHFFFAOYSA-N diphenoxy-[phenoxy(diphenyl)silyl]-phenylsilane Chemical compound C=1C=CC=CC=1O[Si]([Si](OC=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)OC1=CC=CC=C1 ZCLLMMBZLXTPCO-UHFFFAOYSA-N 0.000 description 1
- RBAMITFFOYXHFR-UHFFFAOYSA-N diphenoxy-[phenoxy(diphenyl)silyl]oxy-phenylsilane Chemical compound C=1C=CC=CC=1O[Si](C=1C=CC=CC=1)(O[Si](OC=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)OC1=CC=CC=C1 RBAMITFFOYXHFR-UHFFFAOYSA-N 0.000 description 1
- JPKFEPIUGPNLAR-UHFFFAOYSA-N diphenoxy-di(propan-2-yl)silane Chemical compound C=1C=CC=CC=1O[Si](C(C)C)(C(C)C)OC1=CC=CC=C1 JPKFEPIUGPNLAR-UHFFFAOYSA-N 0.000 description 1
- MKRWTGXFGXJSKZ-UHFFFAOYSA-N diphenoxy-phenyl-triphenoxysilylsilane Chemical compound C=1C=CC=CC=1O[Si]([Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)C=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 MKRWTGXFGXJSKZ-UHFFFAOYSA-N 0.000 description 1
- SLAYMDSSGGBWQB-UHFFFAOYSA-N diphenyl(dipropoxy)silane Chemical compound C=1C=CC=CC=1[Si](OCCC)(OCCC)C1=CC=CC=C1 SLAYMDSSGGBWQB-UHFFFAOYSA-N 0.000 description 1
- QAPWZQHBOVKNHP-UHFFFAOYSA-N diphenyl-di(propan-2-yloxy)silane Chemical compound C=1C=CC=CC=1[Si](OC(C)C)(OC(C)C)C1=CC=CC=C1 QAPWZQHBOVKNHP-UHFFFAOYSA-N 0.000 description 1
- SCTQCPWFWDWNTC-UHFFFAOYSA-N diphenylsilyloxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[SiH](C=1C=CC=CC=1)O[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 SCTQCPWFWDWNTC-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- AVBCBOQFOQZNFK-UHFFFAOYSA-N dipropoxy(dipropyl)silane Chemical compound CCCO[Si](CCC)(CCC)OCCC AVBCBOQFOQZNFK-UHFFFAOYSA-N 0.000 description 1
- PCCKJULOKAICID-UHFFFAOYSA-N dipropoxymethyl-[2-(dipropoxymethylsilyl)ethyl]silane Chemical compound CCCOC(OCCC)[SiH2]CC[SiH2]C(OCCC)OCCC PCCKJULOKAICID-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- GWCASPKBFBALDG-UHFFFAOYSA-N ditert-butyl(diethoxy)silane Chemical compound CCO[Si](C(C)(C)C)(C(C)(C)C)OCC GWCASPKBFBALDG-UHFFFAOYSA-N 0.000 description 1
- OANIYCQMEVXZCJ-UHFFFAOYSA-N ditert-butyl(dimethoxy)silane Chemical compound CO[Si](OC)(C(C)(C)C)C(C)(C)C OANIYCQMEVXZCJ-UHFFFAOYSA-N 0.000 description 1
- WOMHHBWXYINIPW-UHFFFAOYSA-N ditert-butyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](C(C)(C)C)(C(C)(C)C)OC1=CC=CC=C1 WOMHHBWXYINIPW-UHFFFAOYSA-N 0.000 description 1
- AUSJIUIFKLDCQZ-UHFFFAOYSA-N ditert-butyl(dipropoxy)silane Chemical compound CCCO[Si](C(C)(C)C)(C(C)(C)C)OCCC AUSJIUIFKLDCQZ-UHFFFAOYSA-N 0.000 description 1
- KDYNFDMKJXYFHQ-UHFFFAOYSA-N ditert-butyl-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](C(C)(C)C)(C(C)(C)C)OC(C)(C)C KDYNFDMKJXYFHQ-UHFFFAOYSA-N 0.000 description 1
- HZTYWQHBJNMFSW-UHFFFAOYSA-N ditert-butyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C(C)(C)C)(C(C)(C)C)OC(C)C HZTYWQHBJNMFSW-UHFFFAOYSA-N 0.000 description 1
- GUVUOGQBMYCBQP-UHFFFAOYSA-N dmpu Chemical compound CN1CCCN(C)C1=O GUVUOGQBMYCBQP-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- FEHYCIQPPPQNMI-UHFFFAOYSA-N ethenyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C=C)OC1=CC=CC=C1 FEHYCIQPPPQNMI-UHFFFAOYSA-N 0.000 description 1
- NNBRCHPBPDRPIT-UHFFFAOYSA-N ethenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C=C NNBRCHPBPDRPIT-UHFFFAOYSA-N 0.000 description 1
- MABAWBWRUSBLKQ-UHFFFAOYSA-N ethenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C=C MABAWBWRUSBLKQ-UHFFFAOYSA-N 0.000 description 1
- BQRPSOKLSZSNAR-UHFFFAOYSA-N ethenyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C=C BQRPSOKLSZSNAR-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OFZOXQUFSGKMDQ-UHFFFAOYSA-N ethoxy-[ethoxy(diethyl)silyl]-diethylsilane Chemical compound CCO[Si](CC)(CC)[Si](CC)(CC)OCC OFZOXQUFSGKMDQ-UHFFFAOYSA-N 0.000 description 1
- VWDZMQBFSAGPQS-UHFFFAOYSA-N ethoxy-[ethoxy(diethyl)silyl]oxy-diethylsilane Chemical compound CCO[Si](CC)(CC)O[Si](CC)(CC)OCC VWDZMQBFSAGPQS-UHFFFAOYSA-N 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- HVGIQNNACBDEAJ-UHFFFAOYSA-N ethyl 3-oxohexaneperoxoate zirconium Chemical compound [Zr].C(C)CC(CC(=O)OOCC)=O.C(C)CC(CC(=O)OOCC)=O HVGIQNNACBDEAJ-UHFFFAOYSA-N 0.000 description 1
- FVEFSACGFKYRDG-UHFFFAOYSA-N ethyl 3-oxohexaneperoxoate;titanium Chemical compound [Ti].CCCC(=O)CC(=O)OOCC.CCCC(=O)CC(=O)OOCC FVEFSACGFKYRDG-UHFFFAOYSA-N 0.000 description 1
- DBLVXHJTZIDGHE-UHFFFAOYSA-N ethyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(C)=O.OCCOCCO DBLVXHJTZIDGHE-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- HGWSCXYVBZYYDK-UHFFFAOYSA-N ethyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 HGWSCXYVBZYYDK-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- IFIOAMBFOHEANZ-UHFFFAOYSA-N ethyl-[ethyl(dimethoxy)silyl]-dimethoxysilane Chemical compound CC[Si](OC)(OC)[Si](CC)(OC)OC IFIOAMBFOHEANZ-UHFFFAOYSA-N 0.000 description 1
- VRMVHGLYIBKVFI-UHFFFAOYSA-N ethyl-[ethyl(dimethoxy)silyl]oxy-dimethoxysilane Chemical compound CC[Si](OC)(OC)O[Si](CC)(OC)OC VRMVHGLYIBKVFI-UHFFFAOYSA-N 0.000 description 1
- ZNKNMONNHUJINA-UHFFFAOYSA-N ethyl-[ethyl(diphenoxy)silyl]-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si]([Si](CC)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 ZNKNMONNHUJINA-UHFFFAOYSA-N 0.000 description 1
- POASXXWXGJJVQL-UHFFFAOYSA-N ethyl-[ethyl(diphenoxy)silyl]oxy-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](O[Si](CC)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 POASXXWXGJJVQL-UHFFFAOYSA-N 0.000 description 1
- WTPUCDKHSSJFKA-UHFFFAOYSA-N ethyl-dimethoxy-trimethoxysilylsilane Chemical compound CC[Si](OC)(OC)[Si](OC)(OC)OC WTPUCDKHSSJFKA-UHFFFAOYSA-N 0.000 description 1
- CJEBOFHQMBHCKC-UHFFFAOYSA-N ethyl-diphenoxy-triphenoxysilylsilane Chemical compound C=1C=CC=CC=1O[Si]([Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 CJEBOFHQMBHCKC-UHFFFAOYSA-N 0.000 description 1
- MYEJNNDSIXAGNK-UHFFFAOYSA-N ethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(OC(C)C)OC(C)C MYEJNNDSIXAGNK-UHFFFAOYSA-N 0.000 description 1
- ZVQNVYMTWXEMSF-UHFFFAOYSA-N ethyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](CC)(OC(C)(C)C)OC(C)(C)C ZVQNVYMTWXEMSF-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- JKGQTAALIDWBJK-UHFFFAOYSA-N fluoro(trimethoxy)silane Chemical compound CO[Si](F)(OC)OC JKGQTAALIDWBJK-UHFFFAOYSA-N 0.000 description 1
- KXWNKQIEBQHIAV-UHFFFAOYSA-N fluoro(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(F)OC1=CC=CC=C1 KXWNKQIEBQHIAV-UHFFFAOYSA-N 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- DRWGWOBCZFZBJM-UHFFFAOYSA-N heptan-3-one;octan-2-one Chemical compound CCCCC(=O)CC.CCCCCCC(C)=O DRWGWOBCZFZBJM-UHFFFAOYSA-N 0.000 description 1
- ILPNRWUGFSPGAA-UHFFFAOYSA-N heptane-2,4-dione Chemical compound CCCC(=O)CC(C)=O ILPNRWUGFSPGAA-UHFFFAOYSA-N 0.000 description 1
- DGCTVLNZTFDPDJ-UHFFFAOYSA-N heptane-3,5-dione Chemical compound CCC(=O)CC(=O)CC DGCTVLNZTFDPDJ-UHFFFAOYSA-N 0.000 description 1
- RXTNIJMLAQNTEG-UHFFFAOYSA-N hexan-2-yl acetate Chemical compound CCCCC(C)OC(C)=O RXTNIJMLAQNTEG-UHFFFAOYSA-N 0.000 description 1
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- IMXBRVLCKXGWSS-UHFFFAOYSA-N methyl 2-cyclohexylacetate Chemical compound COC(=O)CC1CCCCC1 IMXBRVLCKXGWSS-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- DRXHEPWCWBIQFJ-UHFFFAOYSA-N methyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 DRXHEPWCWBIQFJ-UHFFFAOYSA-N 0.000 description 1
- PFAPVFASCCOTID-UHFFFAOYSA-N methyl-[methyl(diphenoxy)silyl]-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si]([Si](C)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 PFAPVFASCCOTID-UHFFFAOYSA-N 0.000 description 1
- GGTRGAJZTXLYAO-UHFFFAOYSA-N methyl-[methyl(diphenoxy)silyl]oxy-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](O[Si](C)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 GGTRGAJZTXLYAO-UHFFFAOYSA-N 0.000 description 1
- MFSRIWJYYDYFOH-UHFFFAOYSA-N methyl-diphenoxy-triphenoxysilylsilane Chemical compound C=1C=CC=CC=1O[Si]([Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 MFSRIWJYYDYFOH-UHFFFAOYSA-N 0.000 description 1
- ZIYVHBGGAOATLY-UHFFFAOYSA-N methylmalonic acid Chemical compound OC(=O)C(C)C(O)=O ZIYVHBGGAOATLY-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- IYIAWAACGTUPCC-UHFFFAOYSA-N n-(diethylsulfamoyl)-n-ethylethanamine Chemical compound CCN(CC)S(=O)(=O)N(CC)CC IYIAWAACGTUPCC-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- QJQAMHYHNCADNR-UHFFFAOYSA-N n-methylpropanamide Chemical compound CCC(=O)NC QJQAMHYHNCADNR-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- HWWGUUIGLJQLQD-UHFFFAOYSA-N nonane-3,5-dione Chemical compound CCCCC(=O)CC(=O)CC HWWGUUIGLJQLQD-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- GJYXGIIWJFZCLN-UHFFFAOYSA-N octane-2,4-dione Chemical compound CCCCC(=O)CC(C)=O GJYXGIIWJFZCLN-UHFFFAOYSA-N 0.000 description 1
- PJEPOHXMGDEIMR-UHFFFAOYSA-N octane-3,5-dione Chemical compound CCCC(=O)CC(=O)CC PJEPOHXMGDEIMR-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- ZVTLOJDICJWNPQ-UHFFFAOYSA-N phenoxy-[phenoxy(diphenyl)silyl]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si]([Si](OC=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)OC1=CC=CC=C1 ZVTLOJDICJWNPQ-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- FABOKLHQXVRECE-UHFFFAOYSA-N phenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC=C1 FABOKLHQXVRECE-UHFFFAOYSA-N 0.000 description 1
- VPLNCHFJAOKWBT-UHFFFAOYSA-N phenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1=CC=CC=C1 VPLNCHFJAOKWBT-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- QGMRQYFBGABWDR-UHFFFAOYSA-N sodium;5-ethyl-5-pentan-2-yl-1,3-diazinane-2,4,6-trione Chemical compound [Na+].CCCC(C)C1(CC)C(=O)NC(=O)NC1=O QGMRQYFBGABWDR-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- HXLWJGIPGJFBEZ-UHFFFAOYSA-N tert-butyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(C)(C)C HXLWJGIPGJFBEZ-UHFFFAOYSA-N 0.000 description 1
- YBCWQJZHAOTDLY-UHFFFAOYSA-N tert-butyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C(C)(C)C)OC1=CC=CC=C1 YBCWQJZHAOTDLY-UHFFFAOYSA-N 0.000 description 1
- UTIRVQGNGQSJNF-UHFFFAOYSA-N tert-butyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C(C)(C)C UTIRVQGNGQSJNF-UHFFFAOYSA-N 0.000 description 1
- HVEXJEOBOQONBC-UHFFFAOYSA-N tert-butyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C(C)(C)C HVEXJEOBOQONBC-UHFFFAOYSA-N 0.000 description 1
- ULXGRUZMLVGCGL-UHFFFAOYSA-N tert-butyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C(C)(C)C ULXGRUZMLVGCGL-UHFFFAOYSA-N 0.000 description 1
- OQTSOKXAWXRIAC-UHFFFAOYSA-N tetrabutan-2-yl silicate Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)OC(C)CC OQTSOKXAWXRIAC-UHFFFAOYSA-N 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- BCLLLHFGVQKVKL-UHFFFAOYSA-N tetratert-butyl silicate Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BCLLLHFGVQKVKL-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- KLPWIDSFARMZQW-UHFFFAOYSA-N tri(butan-2-yloxy)-[2-tri(butan-2-yloxy)silylethyl]silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)CC[Si](OC(C)CC)(OC(C)CC)OC(C)CC KLPWIDSFARMZQW-UHFFFAOYSA-N 0.000 description 1
- IVRXTRZVBJSOLZ-UHFFFAOYSA-N tri(butan-2-yloxy)-[2-tri(butan-2-yloxy)silylphenyl]silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C1=CC=CC=C1[Si](OC(C)CC)(OC(C)CC)OC(C)CC IVRXTRZVBJSOLZ-UHFFFAOYSA-N 0.000 description 1
- SGZJOYFOVHWDFY-UHFFFAOYSA-N tri(butan-2-yloxy)-[3-tri(butan-2-yloxy)silylphenyl]silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C1=CC=CC([Si](OC(C)CC)(OC(C)CC)OC(C)CC)=C1 SGZJOYFOVHWDFY-UHFFFAOYSA-N 0.000 description 1
- OHGMZEITXQWDLR-UHFFFAOYSA-N tri(butan-2-yloxy)-[4-tri(butan-2-yloxy)silylphenyl]silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C1=CC=C([Si](OC(C)CC)(OC(C)CC)OC(C)CC)C=C1 OHGMZEITXQWDLR-UHFFFAOYSA-N 0.000 description 1
- FURAZISLABARIL-UHFFFAOYSA-N tri(butan-2-yloxy)-[di(butan-2-yloxy)methylsilylmethyl]silane Chemical compound CCC(C)OC(OC(C)CC)[SiH2]C[Si](OC(C)CC)(OC(C)CC)OC(C)CC FURAZISLABARIL-UHFFFAOYSA-N 0.000 description 1
- IKCSBNRFPJTRMT-UHFFFAOYSA-N tri(butan-2-yloxy)-[tri(butan-2-yloxy)silylmethyl]silane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C[Si](OC(C)CC)(OC(C)CC)OC(C)CC IKCSBNRFPJTRMT-UHFFFAOYSA-N 0.000 description 1
- HKALKJRBIYJXJT-UHFFFAOYSA-N tri(butan-2-yloxy)-butylsilane Chemical compound CCCC[Si](OC(C)CC)(OC(C)CC)OC(C)CC HKALKJRBIYJXJT-UHFFFAOYSA-N 0.000 description 1
- MHQDJCZAQGWXBC-UHFFFAOYSA-N tri(butan-2-yloxy)-ethenylsilane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C=C MHQDJCZAQGWXBC-UHFFFAOYSA-N 0.000 description 1
- SGHZCASSRKVVCL-UHFFFAOYSA-N tri(butan-2-yloxy)-ethylsilane Chemical compound CCC(C)O[Si](CC)(OC(C)CC)OC(C)CC SGHZCASSRKVVCL-UHFFFAOYSA-N 0.000 description 1
- RJNDDRZGJNVASH-UHFFFAOYSA-N tri(butan-2-yloxy)-methylsilane Chemical compound CCC(C)O[Si](C)(OC(C)CC)OC(C)CC RJNDDRZGJNVASH-UHFFFAOYSA-N 0.000 description 1
- PCDRXIBYKFIRQR-UHFFFAOYSA-N tri(butan-2-yloxy)-phenylsilane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C1=CC=CC=C1 PCDRXIBYKFIRQR-UHFFFAOYSA-N 0.000 description 1
- JKJUOACCVYNCDI-UHFFFAOYSA-N tri(butan-2-yloxy)-tert-butylsilane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C(C)(C)C JKJUOACCVYNCDI-UHFFFAOYSA-N 0.000 description 1
- COKLPZSYWJNYBJ-UHFFFAOYSA-N tri(butan-2-yloxy)silane Chemical compound CCC(C)O[SiH](OC(C)CC)OC(C)CC COKLPZSYWJNYBJ-UHFFFAOYSA-N 0.000 description 1
- MQVCTPXBBSKLFS-UHFFFAOYSA-N tri(propan-2-yloxy)-propylsilane Chemical compound CCC[Si](OC(C)C)(OC(C)C)OC(C)C MQVCTPXBBSKLFS-UHFFFAOYSA-N 0.000 description 1
- JGABXROLARSPEN-UHFFFAOYSA-N tri(propan-2-yloxy)silane Chemical compound CC(C)O[SiH](OC(C)C)OC(C)C JGABXROLARSPEN-UHFFFAOYSA-N 0.000 description 1
- DWZGQVYXDVZBBB-UHFFFAOYSA-N tributoxy(2-tributoxysilylethyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CC[Si](OCCCC)(OCCCC)OCCCC DWZGQVYXDVZBBB-UHFFFAOYSA-N 0.000 description 1
- DEKZKCDJQLBBRA-UHFFFAOYSA-N tributoxy(butyl)silane Chemical compound CCCCO[Si](CCCC)(OCCCC)OCCCC DEKZKCDJQLBBRA-UHFFFAOYSA-N 0.000 description 1
- SGCFZHOZKKQIBU-UHFFFAOYSA-N tributoxy(ethenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C=C SGCFZHOZKKQIBU-UHFFFAOYSA-N 0.000 description 1
- GIHPVQDFBJMUAO-UHFFFAOYSA-N tributoxy(ethyl)silane Chemical compound CCCCO[Si](CC)(OCCCC)OCCCC GIHPVQDFBJMUAO-UHFFFAOYSA-N 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- INUOIYMEJLOQFN-UHFFFAOYSA-N tributoxy(phenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=CC=C1 INUOIYMEJLOQFN-UHFFFAOYSA-N 0.000 description 1
- WAAWAIHPWOJHJJ-UHFFFAOYSA-N tributoxy(propyl)silane Chemical compound CCCCO[Si](CCC)(OCCCC)OCCCC WAAWAIHPWOJHJJ-UHFFFAOYSA-N 0.000 description 1
- MVXBTESZGSNIIB-UHFFFAOYSA-N tributoxy(tert-butyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C(C)(C)C MVXBTESZGSNIIB-UHFFFAOYSA-N 0.000 description 1
- JXXQPVMVSMWLGZ-UHFFFAOYSA-N tributoxy(tributoxysilylmethyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C[Si](OCCCC)(OCCCC)OCCCC JXXQPVMVSMWLGZ-UHFFFAOYSA-N 0.000 description 1
- ZYXLOEAJFSQDQG-UHFFFAOYSA-N tributoxy-(2-tributoxysilylphenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=CC=C1[Si](OCCCC)(OCCCC)OCCCC ZYXLOEAJFSQDQG-UHFFFAOYSA-N 0.000 description 1
- UYZUVKDKSJFNIN-UHFFFAOYSA-N tributoxy-(3-tributoxysilylphenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=CC([Si](OCCCC)(OCCCC)OCCCC)=C1 UYZUVKDKSJFNIN-UHFFFAOYSA-N 0.000 description 1
- YBNXDKRALACDIA-UHFFFAOYSA-N tributoxy-(4-tributoxysilylphenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=C([Si](OCCCC)(OCCCC)OCCCC)C=C1 YBNXDKRALACDIA-UHFFFAOYSA-N 0.000 description 1
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- AKYUXYJGXHZKLL-UHFFFAOYSA-N triethoxy(triethoxysilyl)silane Chemical compound CCO[Si](OCC)(OCC)[Si](OCC)(OCC)OCC AKYUXYJGXHZKLL-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- IXJNGXCZSCHDFE-UHFFFAOYSA-N triphenoxy(phenyl)silane Chemical compound C=1C=CC=CC=1O[Si](C=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 IXJNGXCZSCHDFE-UHFFFAOYSA-N 0.000 description 1
- AMUIJRKZTXWCEA-UHFFFAOYSA-N triphenoxy(propyl)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCC)OC1=CC=CC=C1 AMUIJRKZTXWCEA-UHFFFAOYSA-N 0.000 description 1
- MUCRQDBOUNQJFE-UHFFFAOYSA-N triphenoxy(triphenoxysilyl)silane Chemical compound C=1C=CC=CC=1O[Si]([Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 MUCRQDBOUNQJFE-UHFFFAOYSA-N 0.000 description 1
- YRUALOZSEADDBR-UHFFFAOYSA-N triphenyl triphenoxysilyl silicate Chemical compound C=1C=CC=CC=1O[Si](O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 YRUALOZSEADDBR-UHFFFAOYSA-N 0.000 description 1
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 1
- BZIXIRYKSIMLOB-UHFFFAOYSA-N tripropoxy(tripropoxysilylmethyl)silane Chemical compound CCCO[Si](OCCC)(OCCC)C[Si](OCCC)(OCCC)OCCC BZIXIRYKSIMLOB-UHFFFAOYSA-N 0.000 description 1
- FOUOZDXPXSKVEL-UHFFFAOYSA-N tripropoxy-(4-tripropoxysilylphenyl)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=C([Si](OCCC)(OCCC)OCCC)C=C1 FOUOZDXPXSKVEL-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- GBGOZMPAPWGNGR-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-[2-[tris[(2-methylpropan-2-yl)oxy]silyl]ethyl]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)CC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C GBGOZMPAPWGNGR-UHFFFAOYSA-N 0.000 description 1
- ZZEMYLNHCSTIPH-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-[2-[tris[(2-methylpropan-2-yl)oxy]silyl]phenyl]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC=C1[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C ZZEMYLNHCSTIPH-UHFFFAOYSA-N 0.000 description 1
- NNKMRNUOGTXRCM-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-[3-[tris[(2-methylpropan-2-yl)oxy]silyl]phenyl]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC([Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)=C1 NNKMRNUOGTXRCM-UHFFFAOYSA-N 0.000 description 1
- PITXUFPLSLHXRV-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-[4-[tris[(2-methylpropan-2-yl)oxy]silyl]phenyl]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=C([Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)C=C1 PITXUFPLSLHXRV-UHFFFAOYSA-N 0.000 description 1
- KGOOITCIBGXHJO-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-phenylsilane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC=C1 KGOOITCIBGXHJO-UHFFFAOYSA-N 0.000 description 1
- DIZPPYBTFPZSGK-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-propylsilane Chemical compound CCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C DIZPPYBTFPZSGK-UHFFFAOYSA-N 0.000 description 1
- QCKKBOHAYRLMQP-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH](OC(C)(C)C)OC(C)(C)C QCKKBOHAYRLMQP-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Paints Or Removers (AREA)
Abstract
본 발명은 반도체 장치의 배선 형성에 대하여 상세하게는 반도체 배선 형성에 바람직한 듀얼 다마신 구조 및 그의 형성 방법에 관한 것이다.
듀얼 다마신 구조, 무기계 절연막, 유기계 절연막, 미드 엣치 스토퍼층, 금속 산화물막, 비유전률, 유리 전이점, 열분해 온도
Description
도 1은 무기계 절연막, 유기계 절연막 및 금속 산화물막을 갖는 적층 구조를 나타낸다.
도 2는 무기계 절연막 내에 미드 엣치 스토퍼층을 갖는 적층 구조를 나타낸다.
본 발명은 반도체 장치의 배선 형성에 대하여 상세하게는 반도체 배선 형성에 바람직한 듀얼 다마신 구조 및 그의 형성 방법에 관한 것이다.
반도체 장치의 미세화와 함께 배선 재료가 종래의 알루미늄으로부터 구리로 전환되는 움직임이 진전되고 있다. 구리를 배선 재료로 사용하는 경우, 다마신법을 많이 사용하게 되며 그 중에서도 비아 배선과 트렌치 배선을 동시에 형성할 수 있는 듀얼 다마신법은 반도체 장치의 제조 비용을 저감시킬 수 있기 때문에 바람직한 수법이다.
현재, 실리카를 절연막으로 하는 배선 구조에 있어서, 이 듀얼 다마신법에 의해 형성되는 구리 배선 기술이 일반적으로 보급되고 있다.
그리고 반도체 장치의 추가의 미세화 요구에 있어서, 배선 재료 뿐만 아니라, 절연 재료를 현행의 실리카(비유전률 4)로부터 더욱 낮은 유전 재료로 전환시키는 검토도 활발하게 진행되고 있다.
이러한 저유전 재료로는 통상의 실리카에 불소 원자가 첨가된 불소 도핑 실리카, CVD법 탄소 함유 실리카막, 도포형 유기 절연막, 도포형 실록산계 막 등을 들 수 있다.
한편, 듀얼 다마신의 형성 방법으로는 몇가지 방법을 들 수 있다.
비아 퍼스트법, 트렌치 퍼스트법, 매립 하드마스크법(Buried Hardmask), 듀얼 하드마스크법 등이다.
통상의 실리카 또는 불소 도핑 실리카를 절연 재료로 사용하는 경우, 마스크얼라이먼트의 용이함,총 공정수로 인해 비아 퍼스트법이 단지 사용되고 있다. 비아 퍼스트법으로는 우선, 비아 패턴을 절연막에 형성하고 그 후, 형성한 비아에 포토레지스트 또는 반사 방지 재료를 매립하고, 트렌치를 형성한 후, 비아에 매립된 포토레지스트 및 반사 방지 재료의 나머지를 산소 플라즈마 또는 강아민을 베이스로 하는 웨트 박리액 등을 사용하여 제거한다.
이 때문에 저유전율막은 비어에 매립된 레지스트 또는 반사 방지막의 나머지를 제거할 때에 사용되는 플라즈마 또는 강력한 웨트 박리액에 의한 손상을 피할 수 없다는 문제점이 있다. 트렌치 퍼스트의 경우에도 동일한 문제점을 갖는다.
또한, 매립 하드마스크법으로는 상기와 같은 문제점은 없지만, 막형성 공정 과 리소그래피 공정을 몇번이나 왕복하기 때문에, 제조 비용이 비싸진다는 문제점이 있다.
이 점에서 듀얼레이어 하드마스크법은 이러한 결점을 보충하는 방법으로, 저유전 재료를 절연막으로 사용하는 듀얼 다마신 형성에 있어서 유력한 방법으로 볼 수 있다.
현재에는 듀얼레이어 하드마스크법을 사용하여 듀얼 다마신을 형성할 때에는 CVD법의 탄화규소, 질화규소 및 실리카막으로부터 선택되는 2종류를 조합시킨 방법을 생각할 수 있다. 그러나, 모두가 규소를 포함하는 막이며 각 레이어 사이의 에칭 선택비를 확보하여 적절한 형상으로 듀얼 다마신 구조를 형성하는 것이 곤란하다는 문제점이 있다.
또한, 이 방법을 도포계 재료와 조합시킨 경우에는, 도포계 막형성 장치와 CVD 계 막형성 장치를 실리콘 웨이퍼가 왕복하기 때문에 공정 플로우가 복잡해지는 문제점도 있다.
본 발명은 상기 문제를 해결하기 위해서 새로운 듀얼 다마신 구조의 형성 방법을 제공하는 것을 목적으로 한다.
본 발명은 무기계 절연막 상에 유기계 절연막 및 금속 산화물막 층을 적층하는 공정을 포함하는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법 및 그 방법으로 형성된 듀얼 다마신 구조를 제공하는 것이다.
무기계 절연막층
본 발명에 있어서 무기계 절연막층으로는 실리카, 탄화수소기를 갖는 폴리실록산이 바람직하다.
이들 실리카 또는 탄화수소기를 갖는 폴리실록산을 포함하는 무기계 절연막층은 CVD법으로 형성할 수 있지만 도포액을 사용하여 형성하는 것이 바람직하다.
무기계 절연막층 형성용 도포액은 (A) 폴리실록산 및 (B) 유기 용매를 포함한다.
여기에서, (A) 폴리실록산으로는 하기 화학식 1로 표시되는 화합물 (이하, " 화합물 (1)"이라고 함), 하기 화학식 2로 표시되는 화합물 (이하, "화합물 (2)"라고 함) 및 하기 화학식 3으로 표시되는 화합물 (이하, "화합물 (3)"이라고 함)의 군으로부터 선택된 1종 이상의 실란 화합물을 가수분해하여 축합한 가수 분해 축합물을 들 수 있다.
식 중, R은 수소 원자, 불소 원자 또는 1가의 유기기, R1은 1가의 유기기, a는 1 내지 2의 정수를 나타낸다.
식 중, R2는 1가의 유기기를 나타낸다.
식 중, R3 내지 R6은 동일하거나 상이하고, 각각 1가의 유기기, b 및 c는 동일하거나 상이하고, 0 내지 2의 수를 나타내며, R7은 산소 원자, 페닐렌기 또는 (CH2)n으로 나타내는 기(여기에서, n은 1 내지 6의 정수임), d는 0 또는 1을 나타낸다.
화합물 (1);
상기 화학식 1에서, R 및 R1의 1가의 유기기로는 알킬기, 아릴기, 알릴기, 글리시딜기 등을 들 수 있다. 또한, 화학식 1에서, R은 1가의 유기기, 특히 알킬기 또는 페닐기가 바람직하다.
여기에서, 알킬기로는 메틸기, 에틸기, 프로필기, 부틸기 등을 들 수 있고, 바람직하게는 탄소수 1 내지 5이고, 이들 알킬기는 쇄상, 분지되어 있을 수도 있고, 또한 수소 원자가 불소 원자 등으로 치환될 수도 있다.
화학식 1에서, 아릴기로는 페닐기, 나프틸기, 메틸페닐기, 에틸페닐기, 클로로페닐기, 브로모페닐기, 플루오로페닐기 등을 들 수 있다.
화합물 (1)의 구체예로는 트리메톡시실란, 트리에톡시실란, 트리-n-프로폭시 실란, 트리-iso-프로폭시실란, 트리-n-부톡시실란, 트리-sec-부톡시실란, 트리-tert-부톡시실란, 트리페녹시실란, 플루오로트리메톡시실란, 플루오로트리에톡시실란, 플루오로트리-n-프로폭시실란, 플루오로트리-iso-프로폭시실란, 플루오로트리-n-부톡시실란, 플루오로트리-sec-부톡시실란, 플루오로트리-tert-부톡시실란, 플루오로트리페녹시실란 등;
메틸트리메톡시실란, 메틸트리에톡시실란, 메틸트리-n-프로폭시실란, 메틸트리-iso-프로폭시실란, 메틸트리-n-부톡시실란, 메틸트리-sec-부톡시실란, 메틸트리-tert-부톡시실란, 메틸트리페녹시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, 에틸트리-n-프로폭시실란, 에틸트리-iso-프로폭시실란, 에틸트리-n-부톡시실란, 에틸트리-sec-부톡시실란, 에틸트리-tert-부톡시실란, 에틸트리페녹시실란, 비닐트리메톡시실란, 비닐트리에톡시실란, 비닐트리-n-프로폭시실란, 비닐트리-iso-프로폭시실란, 비닐트리-n-부톡시실란, 비닐트리-sec-부톡시실란, 비닐트리-tert-부톡시실란, 비닐트리페녹시실란, n-프로필트리메톡시실란, n-프로필트리에톡시실란, n-프로필트리-n-프로폭시실란, n-프로필트리-iso-프로폭시실란, n-프로필트리-n-부톡시실란, n-프로필트리-sec-부톡시실란, n-프로필트리-tert-부톡시실란, n-프로필트리페녹시실란, i-프로필트리메톡시실란, i-프로필트리에톡시실란, i-프로필트리-n-프로폭시실란, i-프로필트리-iso-프로폭시실란, i-프로필트리-n-부톡시실란, i-프로필트리-sec-부톡시실란, i-프로필트리-tert-부톡시실란, i-프로필트리페녹시실란, n-부틸트리메톡시실란, n-부틸트리에톡시실란, n-부틸트리-n-프로폭시실란, n-부틸트리-iso-프로폭시실란, n-부틸트리-n-부톡시실란, n-부 틸트리-sec-부톡시실란, n-부틸트리-tert-부톡시실란, n-부틸트리페녹시실란, sec-부틸트리메톡시실란, sec-부틸트리에톡시실란, sec-부틸-트리-n-프로폭시실란, sec-부틸-트리-iso-프로폭시실란, sec-부틸-트리-n-부톡시실란, sec-부틸-트리-sec-부톡시실란, sec-부틸-트리-tert-부톡시실란, sec-부틸-트리페녹시실란, t-부틸트리메톡시실란, t-부틸트리에톡시실란, t-부틸트리-n-프로폭시실란, t-부틸트리-iso-프로폭시실란, t-부틸트리-n-부톡시실란, t-부틸트리-sec-부톡시실란, t-부틸트리-tert-부톡시실란, t-부틸트리페녹시실란, 페닐트리메톡시실란, 페닐트리에톡시실란, 페닐트리-n-프로폭시실란, 페닐트리-iso-프로폭시실란, 페닐트리-n-부톡시실란, 페닐트리-sec-부톡시실란, 페닐트리-tert-부톡시실란, 페닐트리페녹시실란, 비닐트리메톡시실란, 비닐트리에톡시실란, γ-아미노프로필트리메톡시실란, γ-아미노프로필트리에톡시실란, γ-글리시독시프로필트리메톡시실란, γ-글리시독시프로필트리에톡시실란, γ-트리플루오로프로필트리메톡시실란, γ-트리플루오로프로필트리에톡시실란 등;
디메틸디메톡시실란, 디메틸디에톡시실란, 디메틸-디-n-프로폭시실란, 디메틸-디-iso-프로폭시실란, 디메틸-디-n-부톡시실란, 디메틸-디-sec-부톡시실란, 디메틸-디-tert-부톡시실란, 디메틸디페녹시실란, 디에틸디메톡시실란, 디에틸디에톡시실란, 디에틸-디-n-프로폭시실란, 디에틸-디-iso-프로폭시실란, 디에틸-디-n-부톡시실란, 디에틸-디-sec-부톡시실란, 디에틸-디-tert-부톡시실란, 디에틸디페녹시실란, 디-n-프로필디메톡시실란, 디-n-프로필디에톡시실란, 디-n-프로필-디-n-프로폭시실란, 디-n-프로필-디-iso-프로폭시실란, 디-n-프로필-디-n-부톡시실란, 디-n- 프로필-디-sec-부톡시실란, 디-n-프로필-디-tert-부톡시실란, 디-n-프로필-디-페녹시실란, 디-iso-프로필디메톡시실란, 디-iso-프로필디에톡시실란, 디-iso-프로필-디-n-프로폭시실란, 디-iso-프로필-디-iso-프로폭시실란, 디-iso-프로필-디-n-부톡시실란, 디-iso-프로필-디-sec-부톡시실란, 디-iso-프로필-디-tert-부톡시실란, 디-iso-프로필-디-페녹시실란, 디-n-부틸디메톡시실란, 디-n-부틸디에톡시실란, 디-n-부틸-디-n-프로폭시실란, 디-n-부틸-디-iso-프로폭시실란, 디-n-부틸-디-n-부톡시실란, 디-n-부틸-디-sec-부톡시실란, 디-n-부틸-디-tert-부톡시실란, 디-n-부틸-디-페녹시실란, 디-sec-부틸디메톡시실란, 디-sec-부틸디에톡시실란, 디-sec-부틸-디-n-프로폭시실란, 디-sec-부틸-디-iso-프로폭시실란, 디-sec-부틸-디-n-부톡시실란, 디-sec-부틸-디-sec-부톡시실란, 디-sec-부틸-디-tert-부톡시실란, 디-sec-부틸-디-페녹시실란, 디-tert-부틸디메톡시실란, 디-tert-부틸디에톡시실란, 디-tert-부틸-디-n-프로폭시실란, 디-tert-부틸-디-iso-프로폭시실란, 디-tert-부틸-디-n-부톡시실란, 디-tert-부틸-디-sec-부톡시실란, 디-tert-부틸-디-tert-부톡시실란, 디-tert-부틸-디-페녹시실란, 디페닐디메톡시실란, 디페닐-디-에톡시실란, 디페닐-디-n-프로폭시실란, 디페닐-디-iso-프로폭시실란, 디페닐-디-n-부톡시실란, 디페닐-디-sec-부톡시실란, 디페닐-디-tert-부톡시실란, 디페닐디페녹시실란, 디비닐트리메톡시실란 등을 들 수 있다.
화합물 (1)로서 바람직한 화합물은 메틸트리메톡시실란, 메틸트리에톡시실란, 메틸트리-n-프로폭시실란, 메틸트리-iso-프로폭시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, 비닐트리메톡시실란, 비닐트리에톡시실란, 페닐트리메톡시실 란, 페닐트리에톡시실란, 디메틸디메톡시실란, 디메틸디에톡시실란, 디에틸디메톡시실란, 디에틸디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란 등이다.
이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.
화합물 (2);
상기 화학식 2에서, R2로 표시되는 1가의 유기기로는 상기 화학식 1과 동일한 유기기를 들 수 있다.
화합물 (2)의 구체예로는 테트라메톡시실란, 테트라에톡시실란, 테트라-n-프로폭시실란, 테트라-iso-프로폭시실란, 테트라-n-부톡시실란, 테트라-sec-부톡시실란, 테트라-tert-부톡시실란, 테트라페녹시실란 등을 들 수 있다.
화합물 (3);
상기 화학식 3에 있어서, R3 내지 R6으로 나타내는 1가의 유기기로는 상기 화학식 1과 동일한 유기기를 들 수 있다.
화합물 (3) 중 화학식 3에서의 R7이 산소 원자인 화합물로는 헥사메톡시디실록산, 헥사에톡시디실록산, 헥사페녹시디실록산, 1,1,1,3,3-펜타메톡시-3-메틸디실록산, 1,1,1,3,3-펜타에톡시-3-메틸디실록산, 1,1,1,3,3-펜타페녹시-3-메틸디실록산, 1,1,1,3,3-펜타메톡시-3-에틸디실록산, 1,1,1,3,3-펜타에톡시-3-에틸디실록산, 1,1,1,3,3-펜타페녹시-3-에틸디실록산, 1,1,1,3,3-펜타메톡시-3-페닐디실록산, 1,1,1,3,3-펜타에톡시-3-페닐디실록산, 1,1,1,3,3-펜타페녹시-3-페닐디실록산, 1,1,3,3-테트라메톡시-1,3-디메틸디실록산, 1,1,3,3-테트라에톡시-1,3-디메틸디실 록산, 1,1,3,3-테트라페녹시-1,3-디메틸디실록산, 1,1,3,3-테트라메톡시-1,3-디에틸디실록산, 1,1,3,3-테트라에톡시-1,3-디에틸디실록산, 1,1,3,3-테트라페녹시-1,3-디에틸디실록산, 1,1,3,3-테트라메톡시-1,3-디페닐디실록산, 1,1,3,3-테트라에톡시-1,3-디페닐디실록산, 1,1,3,3-테트라페녹시-1,3-디페닐디실록산, 1,1,3-트리메톡시-1,3,3-트리메틸디실록산, 1,1,3-트리에톡시-1,3,3-트리메틸디실록산, 1,1,3-트리페녹시-1,3,3-트리메틸디실록산, 1,1,3-트리메톡시-1,3,3-트리에틸디실록산, 1,1,3-트리에톡시-1,3,3-트리에틸디실록산, 1,1,3-트리페녹시-1,3,3-트리에틸디실록산, 1,1,3-트리메톡시-1,3,3-트리페닐디실록산, 1,1,3-트리에톡시-1,3,3-트리페닐디실록산, 1,1,3-트리페녹시-1,3,3-트리페닐디실록산, 1,3-디메톡시-1,1,3,3-테트라메틸디실록산, 1,3-디에톡시-1,1,3,3-테트라메틸디실록산, 1,3-디페녹시-1,1,3,3-테트라메틸디실록산, 1,3-디메톡시-1,1,3,3-테트라에틸디실록산, 1,3-디에톡시-1,1,3,3-테트라에틸디실록산, 1,3-디페녹시-1,1,3,3-테트라에틸디실록산, 1,3-디메톡시-1,1,3,3-테트라페닐디실록산, 1,3-디에톡시-1,1,3,3-테트라페닐디실록산, 1,3-디페녹시-1,1,3,3-테트라페닐디실록산 등을 들 수 있다.
이 중에서 헥사메톡시디실록산, 헥사에톡시디실록산, 1,1,3,3-테트라메톡시-1,3-디메틸디실록산, 1,1,3,3-테트라에톡시-1,3-디메틸디실록산, 1,1,3,3-테트라메톡시-1,3-디페닐디실록산, 1,3-디메톡시-1,1,3,3-테트라메틸디실록산, 1,3-디에톡시-1,1,3,3-테트라메틸디실록산, 1,3-디메톡시-1,1,3,3-테트라페닐디실록산, 1,3-디에톡시-1,1,3,3-테트라페닐디실록산 등을 바람직한 예로 들 수 있다.
또한, 화학식 3에 있어서, d가 0인 화합물로는 헥사메톡시디실란, 헥사에톡 시디실란, 헥사페녹시디실란, 1,1,1,2,2-펜타메톡시-2-메틸디실란, 1,1,1,2,2-펜타에톡시-2-메틸디실란, 1,1,1,2,2-펜타페녹시-2-메틸디실란, 1,1,1,2,2-펜타메톡시-2-에틸디실란, 1,1,1,2,2-펜타에톡시-2-에틸디실란, 1,1,1,2,2-펜타페녹시-2-에틸디실란, 1,1,1,2,2-펜타메톡시-2-페닐디실란, 1,1,1,2,2-펜타에톡시-2-페닐디실란, 1,1,1,2,2-펜타페녹시-2-페닐디실란, 1,1,2,2-테트라메톡시-1,2-디메틸디실란, 1,1,2,2-테트라에톡시-1,2-디메틸디실란, 1,1,2,2-테트라페녹시-1,2-디메틸디실란, 1,1,2,2-테트라메톡시-1,2-디에틸디실란, 1,1,2,2-테트라에톡시-1,2-디에틸디실란, 1,1,2,2-테트라페녹시-1,2-디에틸디실란, 1,1,2,2-테트라메톡시-1,2-디페닐디실란, 1,1,2,2-테트라에톡시-1,2-디페닐디실란, 1,1,2,2-테트라페녹시-1,2-디페닐디실란, 1,1,2-트리메톡시-1,2,2-트리메틸디실란, 1,1,2-트리에톡시-1,2,2-트리메틸디실란, 1,1,2-트리페녹시-1,2,2-트리메틸디실란, 1,1,2-트리메톡시-1,2,2-트리에틸디실란, 1,1,2-트리에톡시-1,2,2-트리에틸디실란, 1,1,2-트리페녹시-1,2,2-트리에틸디실란, 1,1,2-트리메톡시-1,2,2-트리페닐디실란, 1,1,2-트리에톡시-1,2,2-트리페닐디실란, 1,1,2-트리페녹시-1,2,2-트리페닐디실란, 1,2-디메톡시-1,1,2,2-테트라메틸디실란, 1,2-디에톡시-1,1,2,2-테트라메틸디실란, 1,2-디페녹시-1,1,2,2-테트라메틸디실란, 1,2-디메톡시-1,1,2,2-테트라에틸디실란, 1,2-디에톡시-1,1,2,2-테트라에틸디실란, 1,2-디페녹시-1,1,2,2-테트라에틸디실란, 1,2-디메톡시-1,1,2,2-테트라페닐디실란, 1,2-디에톡시-1,1,2,2-테트라페닐디실란, 1,2-디페녹시-1,1,2,2-테트라페닐디실란 등을 들 수 있다.
이 중에서 헥사메톡시디실란, 헥사에톡시디실란, 1,1,2,2-테트라메톡시-1,2- 디메틸디실란, 1,1,2,2-테트라에톡시-1,2-디메틸디실란, 1,1,2,2-테트라메톡시-1,2-디페닐디실란, 1,2-디메톡시-1,1,2,2-테트라메틸디실란, 1,2-디에톡시-1,1,2,2-테트라메틸디실란, 1,2-디메톡시-1,1,2,2-테트라페닐디실란, 1,2-디에톡시-1,1,2,2-테트라페닐디실란 등을 바람직한 예로 들 수 있다.
또한, 화학식 3에 있어서, R7이 -(CH2)n-으로 표시되는 기의 화합물로는 비스(트리메톡시실릴)메탄, 비스(트리에톡시실릴)메탄, 비스(트리-n-프로폭시실릴)메탄, 비스(트리-i-프로폭시실릴)메탄, 비스(트리-n-부톡시실릴)메탄, 비스(트리-sec-부톡시실릴)메탄, 비스(트리-t-부톡시실릴)메탄, 1,2-비스(트리메톡시실릴)에탄, 1,2-비스(트리에톡시실릴)에탄, 1,2-비스(트리-n-프로폭시실릴)에탄, 1,2-비스(트리-i-프로폭시실릴)에탄, 1,2-비스(트리-n-부톡시실릴)에탄, 1,2-비스(트리-sec-부톡시실릴)에탄, 1,2-비스(트리-t-부톡시실릴)에탄, 1-(디메톡시메틸실릴)-1-(트리메톡시실릴)메탄, 1-(디에톡시메틸실릴)-1-(트리에톡시실릴)메탄, 1-(디-n-프로폭시메틸실릴)-1-(트리-n-프로폭시실릴)메탄, 1-(디-i-프로폭시메틸실릴)-1-(트리-i-프로폭시실릴)메탄, 1-(디-n-부톡시메틸실릴)-1-(트리-n-부톡시실릴)메탄, 1-(디-sec-부톡시메틸실릴)-1-(트리-sec-부톡시실릴)메탄, 1-(디-t-부톡시메틸실릴)-1-(트리-t-부톡시실릴)메탄, 1-(디메톡시메틸실릴)-2-(트리메톡시실릴)에탄, 1-(디에톡시메틸실릴)-2-(트리에톡시실릴)에탄, 1-(디-n-프로폭시메틸실릴)-2-(트리-n-프로폭시실릴)에탄, 1-(디-i-프로폭시메틸실릴)-2-(트리-i-프로폭시실릴)에탄, 1-(디-n-부톡시메틸실 릴)-2-(트리-n-부톡시실릴)에탄, 1-(디-sec-부톡시메틸실릴)-2-(트리-sec-부톡시실릴)에탄, 1-(디-t-부톡시메틸실릴)-2-(트리-t-부톡시실릴)에탄, 비스(디메톡시메틸실릴)메탄, 비스(디에톡시메틸실릴)메탄, 비스(디-n-프로폭시메틸실릴)메탄, 비스(디-i-프로폭시메틸실릴)메탄, 비스(디-n-부톡시메틸실릴)메탄, 비스(디-sec-부톡시메틸실릴)메탄, 비스(디-t-부톡시메틸실릴)메탄, 1,2-비스(디메톡시메틸실릴)에탄, 1,2-비스(디에톡시메틸실릴)에탄, 1,2-비스(디-n-프로폭시메틸실릴)에탄, 1,2-비스(디-i-프로폭시메틸실릴)에탄, 1,2-비스(디-n-부톡시메틸실릴)에탄, 1,2-비스(디-sec-부톡시메틸실릴)에탄, 1,2-비스(디-t-부톡시메틸실릴)에탄, 1,2-비스(트리메톡시실릴)벤젠, 1,2-비스(트리에톡시실릴)벤젠, 1,2-비스(트리-n-프로폭시실릴)벤젠, 1,2-비스(트리-i-프로폭시실릴)벤젠, 1,2-비스(트리-n-부톡시실릴)벤젠, 1,2-비스(트리-sec-부톡시실릴)벤젠, 1,2-비스(트리-t-부톡시실릴)벤젠, 1,3-비스(트리메톡시실릴)벤젠, 1,3-비스(트리에톡시실릴)벤젠, 1,3-비스(트리-n-프로폭시실릴)벤젠, 1,3-비스(트리-i-프로폭시실릴)벤젠, 1,3-비스(트리-n-부톡시실릴)벤젠, 1,3-비스(트리-sec-부톡시실릴)벤젠, 1,3-비스(트리-t-부톡시실릴)벤젠, 1,4-비스(트리메톡시실릴)벤젠, 1,4-비스(트리에톡시실릴)벤젠, 1,4-비스(트리-n-프로폭시실릴)벤젠, 1,4-비스(트리-i-프로폭시실릴)벤젠, 1,4-비스(트리-n-부톡시실릴)벤젠, 1,4-비스(트리-sec-부톡시실릴)벤젠, 1,4-비스(트리-t-부톡시실릴)벤젠 등을 들 수 있다.
이 중에서, 비스(트리메톡시실릴)메탄, 비스(트리에톡시실릴)메탄, 1,2-비스(트리메톡시실릴)에탄, 1,2-비스(트리에톡시실릴)에탄, 1-(디메톡시메틸실 릴)-1-(트리메톡시실릴)메탄, 1-(디에톡시메틸실릴)-1-(트리에톡시실릴)메탄, 1-(디메톡시메틸실릴)-2-(트리메톡시실릴)에탄, 1-(디에톡시메틸실릴)-2-(트리에톡시실릴)에탄, 비스(디메톡시메틸실릴)메탄, 비스(디에톡시메틸실릴)메탄, 1,2-비스(디메톡시메틸실릴)에탄, 1,2-비스(디에톡시메틸실릴)에탄, 1,2-비스(트리메톡시실릴)벤젠, 1,2-비스(트리에톡시실릴)벤젠, 1,3-비스(트리메톡시실릴)벤젠, 1,3-비스(트리에톡시실릴)벤젠, 1,4-비스(트리메톡시실릴)벤젠, 1,4-비스(트리에톡시실릴)벤젠 등을 바람직한 예로 들 수 있다.
본 발명에 있어서, (A) 성분을 구성하는 화합물 (1) 내지 (3)으로는 상기 화합물 (1), (2) 및 (3)의 1종 또는 2종 이상을 사용할 수 있다.
(A) 성분을 구성하는 화합물 (1) 내지 (3)을 가수분해, 축합시킬 때에는 촉매를 사용할 수도 있다. 이 때에 사용되는 촉매로는 금속 킬레이트 화합물, 유기산, 무기산, 유기 염기, 무기 염기를 들 수 있다.
금속 킬레이트 화합물로는 예를 들어 트리에톡시·모노(아세틸아세토네이트)티탄, 트리-n-프로폭시·모노(아세틸아세토네이트)티탄, 트리-i-프로폭시·모노(아세틸아세토네이트)티탄, 트리-n-부톡시·모노(아세틸아세토네이트)티탄, 트리-sec-부톡시·모노(아세틸아세토네이트)티탄, 트리-t-부톡시·모노(아세틸아세토네이트)티탄, 디에톡시·비스(아세틸아세토네이트)티탄, 디-n-프로폭시·비스(아세틸아세토네이트)티탄, 디-i-프로폭시·비스(아세틸아세토네이트)티탄, 디-n-부톡시·비스(아세틸아세토네이트)티탄, 디-sec-부톡시·비스(아세틸아세토네이트)티탄, 디-t-부톡시·비스(아세틸아세토네이트)티탄, 모노에톡시·트리스(아세 틸아세토네이트)티탄, 모노-n-프로폭시·트리스(아세틸아세토네이트)티탄, 모노-i-프로폭시·트리스(아세틸아세토네이트)티탄, 모노-n-부톡시·트리스(아세틸아세토네이트)티탄, 모노-sec-부톡시·트리스(아세틸아세토네이트)티탄, 모노-t-부톡시·트리스(아세틸아세토네이트)티탄, 테트라키스(아세틸아세토네이트)티탄, 트리에톡시·모노(에틸아세토아세테이트)티탄, 트리-n-프로폭시·모노(에틸아세토아세테이트)티탄, 트리-i-프로폭시·모노(에틸아세토아세테이트)티탄, 트리-n-부톡시·모노(에틸아세토아세테이트)티탄, 트리-sec-부톡시·모노(에틸아세토아세테이트)티탄, 트리-t-부톡시·모노(에틸아세토아세테이트)티탄, 디에톡시·비스(에틸아세토아세테이트)티탄, 디-n-프로폭시·비스(에틸아세토아세테이트)티탄, 디-i-프로폭시·비스(에틸아세토아세테이트)티탄, 디-n-부톡시·비스(에틸아세토아세테이트)티탄, 디-sec-부톡시·비스(에틸아세토아세테이트)티탄, 디-t-부톡시·비스(에틸아세토아세테이트)티탄, 모노에톡시·트리스(에틸아세토아세테이트)티탄, 모노-n-프로폭시·트리스(에틸아세토아세테이트)티탄, 모노-i-프로폭시·트리스(에틸아세토아세테이트)티탄, 모노-n-부톡시·트리스(에틸아세토아세테이트)티탄, 모노-sec-부톡시·트리스(에틸아세토아세테이트)티탄, 모노-t-부톡시·트리스(에틸아세토아세테이트)티탄, 테트라키스(에틸아세토아세테이트)티탄, 모노(아세틸아세토네이트)트리스(에틸아세토아세테이트)티탄, 비스(아세틸아세토네이트)비스(에틸아세토아세테이트)티탄, 트리스(아세틸아세토네이트)모노(에틸아세토아세테이트)티탄등의 티탄킬레이트 화합물;
트리에톡시·모노(아세틸아세토네이트)지르코늄, 트리-n-프로폭시·모노(아 세틸아세토네이트)지르코늄, 트리-i-프로폭시·모노(아세틸아세토네이트)지르코늄, 트리-n-부톡시·모노(아세틸아세토네이트)지르코늄, 트리-sec-부톡시·모노(아세틸아세토네이트)지르코늄, 트리-t-부톡시·모노(아세틸아세토네이트)지르코늄, 디에톡시·비스(아세틸아세토네이트)지르코늄, 디-n-프로폭시·비스(아세틸아세토네이트)지르코늄, 디-i-프로폭시·비스(아세틸아세토네이트)지르코늄, 디-n-부톡시·비스(아세틸아세토네이트)지르코늄, 디-sec-부톡시·비스(아세틸아세토네이트)지르코늄, 디-t-부톡시·비스(아세틸아세토네이트)지르코늄, 모노에톡시·트리스(아세틸아세토네이트)지르코늄, 모노-n-프로폭시·트리스(아세틸아세토네이트)지르코늄, 모노-i-프로폭시·트리스(아세틸아세토네이트)지르코늄, 모노-n-부톡시·트리스(아세틸아세토네이트)지르코늄, 모노-sec-부톡시·트리스(아세틸아세토네이트)지르코늄, 모노-t-부톡시·트리스(아세틸아세토네이트)지르코늄, 테트라키스(아세틸아세토네이트)지르코늄, 트리에톡시·모노(에틸아세토아세테이트)지르코늄, 트리-n-프로폭시·모노(에틸아세토아세테이트)지르코늄, 트리-i-프로폭시·모노(에틸아세토아세테이트)지르코늄, 트리-n-부톡시·모노(에틸아세토아세테이트)지르코늄, 트리-sec-부톡시·모노(에틸아세토아세테이트)지르코늄, 트리-t-부톡시·모노(에틸아세토아세테이트)지르코늄, 디에톡시·비스(에틸아세토아세테이트)지르코늄, 디-n-프로폭시·비스(에틸아세토아세테이트)지르코늄, 디-i-프로폭시·비스(에틸아세토아세테이트)지르코늄, 디-n-부톡시·비스(에틸아세토아세테이트)지르코늄, 디-sec-부톡시·비스(에틸아세토아세테이트)지르코늄, 디-t-부톡시·비스(에틸아세토아세테이트)지르코늄, 모노에톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-n-프로 폭시·트리스(에틸아세토아세테이트)지르코늄, 모노-i-프로폭시·트리스(에틸아세토아세테이트)지르코늄, 모노-n-부톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-sec-부톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-t-부톡시·트리스(에틸아세토아세테이트)지르코늄, 테트라키스(에틸아세토아세테이트)지르코늄, 모노(아세틸아세토네이트)트리스(에틸아세토아세테이트)지르코늄, 비스(아세틸아세토네이트)비스(에틸아세토아세테이트)지르코늄, 트리스(아세틸아세토네이트)모노(에틸아세토아세테이트)지르코늄 등의 지르코늄킬레이트 화합물:
트리스(아세틸아세토네이트)알루미늄, 트리스(에틸아세토아세테이트)알루미늄등의 알루미늄킬레이트 화합물 등을 들 수 있다.
유기산으로는 예를 들어 아세트산, 프로피온산, 부탄산, 펜탄산, 헥산산, 헵탄산, 옥탄산, 노난산, 데칸산, 옥살산, 말레산, 메틸말론산, 아디핀산, 세바신산, 갈산, 부티르산, 메리트산, 아라키돈산, 쉬킴산, 2-에틸헥산산, 올레인산, 스테아린산, 리놀산, 리놀레인산, 살리실산, 벤조산, p-아미노벤조산, p-톨루엔술폰산, 벤젠술폰산, 모노클로로아세트산, 디클로로아세트산, 트리클로로아세트산, 트리플루오로아세트산, 포름산, 말론산, 술폰산, 프탈산, 푸마르산, 시트르산, 타르타르산 등을 들 수 있다.
무기산으로는 예를 들어 염산, 질산, 황산, 불산, 인산 등을 들 수 있다.
유기 염기로는 예를 들어 피리딘, 피롤, 피페라진, 피롤리딘, 피페리딘, 피콜린, 트리메틸아민, 트리에틸아민, 모노에탄올아민, 디에탄올아민, 디메틸모노에탄올아민, 모노메틸디에탄올아민, 트리에탄올아민, 디아자비시클로옥탄, 디아자비 시클로노난, 디아자비시클로운데센, 테트라메틸암모늄히드로옥시드, 요소, 크레아티닌 등을 들 수 있다.
무기 염기로는 예를 들어 암모니아, 수산화나트륨, 수산화칼륨, 수산화바륨, 수산화칼슘 등을 들 수 있다.
이들 촉매 중, 금속 킬레이트 화합물, 유기산, 무기산이 바람직하고 보다 바람직하게는 유기산을 들 수 있다. 유기산으로는 특히 아세트산, 옥살산, 말레산, 말론산이 바람직하다. 촉매로서 유기산을 사용하면, 가수분해 및 축합 반응 중의 중합체의 석출 및 겔화가 될 가능성이 적으므로 바람직하다.
이들 촉매는 1종 또는 2종 이상을 동시에 사용할 수 있다.
상기 촉매의 사용량은 화합물 (1) 내지 (3) 중의 R1O기의 총량 1 몰에 대하여 통상 0.00001 내지 0.05 몰, 바람직하게는 0.00001 내지 0.01 몰이다.
(A) 성분이 화합물 (1) 내지 (3)의 축합물인 경우에는 그 분자량은 폴리스티렌 환산의 중량 평균 분자량으로 통상 500 내지 300,000, 바람직하게는 700 내지 200,000, 더욱 바람직하게는 1,000 내지 100,000 정도이다.
또한, (A) 성분 중, 각 성분을 완전 가수분해 축합물로 환산했을 때에, 화합물 (3)이 화합물 (1), 화합물 (2) 및 화합물 (3)의 총량에 대하여 5 내지 60 중량%, 바람직하게는 5 내지 50 중량%, 더욱 바람직하게는 5 내지 40 중량%이고, 또한 화합물 (1)의 중량이 화합물 (2)의 중량보다 작다. 완전 가수분해 축합물로 환산된 각 성분의 비율에서 화합물 (3)이 화합물 (1) 내지 화합물 (3)의 총량의 5 중 량% 미만에서는 얻어지는 도포막의 기계적 강도가 저하되고 한편, 60 중량%을 초과하면 흡수성이 높아져서 전기적 특성이 저하된다. 또한, 화합물 (1)의 중량이 화합물 (2)의 중량 이상이면 얻어지는 도포막 강도가 저하된다.
또한, 본 발명에 있어서 완전 가수분해 축합물이란, 화합물 (1) 내지 (3)의 SiOR1기가 100 % 가수분해되어 SiOH기가 되고, 또한 완전하게 축합되어 실록산 구조가 된 것을 말한다.
본 발명에 있어서 무기계 절연막층은 상기 실란 화합물의 가수분해, 축합물을 (B) 유기 용매로 용해시킨 도포액을 도포하여, 가열함으로써 형성하는 것이 바람직하다.
(B) 유기 용매로는 알코올계 용매, 케톤계 용매, 아미드계 용매, 에스테르계용매 및 비프로톤계 용매의 군으로부터 선택된 1종 이상을 들 수 있다.
여기에서, 알코올계 용매로는 메탄올, 에탄올, n-프로판올, i-프로판올, n-부탄올, i-부탄올, sec-부탄올, t-부탄올, n-펜탄올, i-펜탄올, 2-메틸부탄올, sec-펜탄올, t-펜탄올, 3-메톡시부탄올, n-헥산올, 2-메틸펜탄올, sec-헥산올, 2-에틸부탄올, sec-헵탄올, 헵탄올-3, n-옥탄올, 2-에틸헥산올, sec-옥탄올, n-노닐알코올, 2,6-디메틸헵탄올-4, n-데칸올, sec-운데실알코올, 트리메틸노닐알코올, sec-테트라데실알코올, sec-헵타데실알코올, 페놀, 시클로헥산올, 메틸시클로헥산올, 3,3,5-트리메틸시클로헥산올, 벤질알코올, 디아세톤알코올 등의 모노알코올계 용매;
에틸렌 글리콜, 1,2-프로필렌글리콜, 1,3-부틸렌글리콜, 펜탄디올-2,4, 2-메틸펜탄디올-2,4, 헥산디올-2,5, 헵탄디올-2,4, 2-에틸헥산디올-1,3, 디에틸렌글리콜, 디프로필렌글리콜, 트리에틸렌글리콜, 트리프로필렌글리콜 등의 다가 알코올계 용매;
에틸렌 글리콜모노메틸에테르, 에틸렌 글리콜모노에틸에테르, 에틸렌 글리콜모노프로필에테르, 에틸렌 글리콜모노부틸에테르, 에틸렌 글리콜모노헥실에테르, 에틸렌 글리콜모노페닐에테르, 에틸렌 글리콜모노-2-에틸부틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노프로필에테르, 디에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노헥실에테르, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르, 디프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노에틸에테르, 디프로필렌글리콜모노프로필에테르 등의 다가 알코올 부분에테르계 용매 등을 들 수 있다.
이들 알코올계 용매는 1종 또는 2종 이상을 동시에 사용할 수 있다.
이들 알코올 중에서 n-프로판올, i-프로판올, n-부탄올, i-부탄올, sec-부탄올, t-부탄올, n-펜탄올, i-펜탄올, 2-메틸부탄올, sec-펜탄올, t-펜탄올, 3-메톡시부탄올, n-헥산올, 2-메틸펜탄올, sec-헥산올, 2-에틸부탄올, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르 등이 바람직하다.
케톤계 용매로는 아세톤, 메틸에틸케톤, 메틸-n-프로필케톤, 메틸-n-부틸케 톤, 디에틸케톤, 메틸-i-부틸케톤, 메틸-n-펜틸케톤, 에틸-n-부틸케톤, 메틸-n-헥실케톤, 디-i-부틸케톤, 트리메틸노나논, 시클로헥사논, 2-헥사논, 메틸시클로헥사논, 2,4-펜탄디온, 아세토닐아세톤, 아세토페논, 펜트온 등 이외에, 아세틸아세톤, 2,4-헥산디온, 2,4-헵탄디온, 3,5-헵탄디온, 2,4-옥탄디온, 3,5-옥탄디온, 2,4-노난디온, 3,5-노난디온, 5-메틸-2,4-헥산디온, 2,2,6,6-테트라메틸-3,5-헵탄디온, 1,1,1,5,5,5-헥사플루오로-2,4-헵탄디온 등의 β-디케톤류 등을 들 수 있다.
이들 케톤계 용매는 1종 또는 2종 이상을 동시에 사용할 수 있다.
아미드계 용매로는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, N-에틸포름아미드, N,N-디에틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-에틸아세트아미드, N,N-디에틸아세트아미드, N-메틸프로피온아미드, N-메틸피롤리돈, N-포르밀모르폴린, N-포르밀피페리딘, N-포르밀피롤리딘, N-아세틸모르폴린, N-아세틸피페리딘, N-아세틸피롤리딘 등을 들 수 있다.
이들 아미드계 용매는 1종 또는 2종 이상을 동시에 사용할 수 있다.
에스테르계 용매로는 디에틸카르보네이트, 탄산에틸렌, 탄산프로필렌, 탄산디에틸, 아세트산메틸, 아세트산에틸, γ-부티로락톤, γ-발레로락톤, 아세트산n-프로필, 아세트산i-프로필, 아세트산n-부틸, 아세트산i-부틸, 아세트산sec-부틸, 아세트산n-펜틸, 아세트산sec-펜틸, 아세트산3-메톡시부틸, 아세트산메틸펜틸, 아세트산2-에틸부틸, 아세트산2-에틸헥실, 아세트산벤질, 아세트산시클로헥실, 아세트산메틸시클로헥실, 아세트산n-노닐, 아세토아세트산메틸, 아세토아세트산에틸, 아세트산에틸렌 글리콜모노메틸에테르, 아세트산에틸렌 글리콜모노에틸에테르, 아 세트산디에틸렌글리콜모노메틸에테르, 아세트산디에틸렌글리콜모노에틸에테르, 아세트산디에틸렌글리콜모노-n-부틸에테르, 아세트산프로필렌글리콜모노메틸에테르, 아세트산프로필렌글리콜모노에틸에테르, 아세트산프로필렌글리콜모노프로필에테르, 아세트산프로필렌글리콜모노부틸에테르, 아세트산디프로필렌글리콜모노메틸에테르, 아세트산디프로필렌글리콜모노에틸에테르, 디아세트산글리콜, 아세트산메톡시트리글리콜, 프로피온산에틸, 프로피온산n-부틸, 프로피온산i-아밀, 옥살산디에틸, 옥살산디-n-부틸, 락트산메틸, 락트산에틸, 락트산n-부틸, 락트산n-아밀, 말론산디에틸, 프탈산디메틸, 프탈산디에틸 등을 들 수 있다.
이들 에스테르계 용매는 1종 또는 2종 이상을 동시에 사용할 수 있다.
비프로톤계 용매로는 아세토니트릴, 디메틸술폭시드, N,N,N',N'-테트라에틸술파미드, 헥사메틸인산트리아미드, N-메틸모르폴린, N-메틸피롤, N-에틸피롤, N-메틸-3-피롤린, N-메틸피페리딘, N-에틸피페리딘, N,N-디메틸피페라진, N-메틸이미다졸, N-메틸-4-피페리돈, N-메틸-2-피페리돈, N-메틸-2-피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디메틸테트라히드로-2(1H)-피리미디논 등을 들 수 있다.
이상의 (B) 유기 용매는 1종 또는 2종 이상을 혼합하여 사용할 수 있다.
상기의 유기 용매 중에서는 알코올계 용매가 바람직하다.
이러한 도포액의 도포 방법으로는 스핀코팅, 디핑, 롤러블레이드 등을 들 수 있다.
이 때의 막 두께는 건조막 두께로서, 1 회 도포로 두께 0.05 내지 1.5 ㎛ 정도, 2회 도포로는 두께 0.1 내지 3 ㎛ 정도의 도포막을 형성할 수 있다.
형성되는 도포막의 두께는 통상 0.2 내지 20 ㎛이다.
이 때의 가열 방법으로는 핫 플레이트, 오븐, 퍼니스 등을 사용할 수 있고 가열 분위기로는 대기하, 질소 분위기, 아르곤 분위기, 진공하, 산소 농도를 컨트롤한 감압하 등에서 행할 수 있다.
또한, 상기 (A) 성분의 경화 속도를 제어하기 위해, 필요에 따라 단계적으로 가열하거나 질소, 공기, 산소, 감압 등의 분위기를 선택할 수 있다.
이와 같이 하여 얻어지는 실리카 또는 실록산계 막은 비유전률이 1.5 내지 3.2, 막 밀도가 통상 0.35 내지 1.2 g/cm3, 바람직하게는 0.4 내지 1.1 g/cm3, 더욱 바람직하게는 0.5 내지 1.O g/cm3이다. 막 밀도가 0.35 g/cm3 미만에서는 도포막의 기계적 강도가 저하되고, 한편 1.2 g/cm3을 초과하면 저비유전률을 얻을 수 없다.
본 발명에 있어서, 무기계 절연막으로는 상기한 실란 화합물을 CVD법에 의해 증착시킨 막도 사용할 수 있다.
유기계 절연막
유기계 절연막으로는 유리 전이점 400 ℃ 이상, 열 분해 온도 500 ℃ 이상의 내열 유기 수지가 바람직하다.
본 발명에서는 유기계 절연막은 배선 공정에서 제거하지 않고 적층 구조 중에 잔존되기 때문에, 유리 전이점 400 ℃ 미만에서는 다층 배선시에 변형을 일으키고 배선의 접속 불량 및 층간 박리 등의 문제가 발생되기 때문에 바람직하지 않다.
또한, 유기계 절연막은 비유전률이 4.0 이하인 것이 바람직하고 또한 비유전률이 3.5 이하인 것이 바람직하다.
유기계 절연막의 막 두께는 무기계 절연막의 막 두께 및 에칭시의 무기계 절연막과의 엣치 선택비로 결정되지만, 통상적으로 10 nm 내지 2000 nm의 범위이다.
유기계 절연막으로는 폴리아릴렌, 폴리아릴렌에테르, 폴리벤조옥사졸, 폴리이미드로 선택되는 유기 중합체인 것이 바람직하다.
이들 유기계 절연막은 유기 중합체를 유기 용제에 용해하고 도포하여, 가열함으로써 형성할 수 있다.
유기 중합체를 포함하는 도포액의 막형성 조건은 50 내지 600 ℃, 바람직하게는 200 내지 500 ℃의 온도로 소성하는 것이 바람직하다.
본 발명에 있어서의 금속 산화물막은 B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Zn, Cd, P, As, Sb, Bi, Ce에서 선택되는 1종 이상을 구성 원소로 하는 금속 산화막이다.
본 발명에서 금속 산화물막은 상기 금속 원소의 금속 알콕시드의 (부분) 가수분해 축합물을 유기 용제에 용해한 도포액을 도포하고, 가열함으로써 형성하는 것이 바람직하다. 출발 물질의 금속 알콕시드로서는 알콕시실란인 것이 바람직하다. 알콕시실란으로는 무기계 절연막을 형성하기 위해 사용하는 실란 화합물과 동일한 것을 들 수 있다. 유기 용매로는 알코올계 용매, 케톤계 용매, 아미드계 용매, 에스테르계 용매 및 비프로톤계 용매의 군으로부터 선택된 1종 이상을 들 수 있다. 유기 용매 중에서는 알코올계 용매가 바람직하다.
본 발명에 있어서 금속 산화물막은 통상 금속 알콕시드의 (부분) 가수분해 축합물을 도포 소성하여 얻어지지만, 도포막을 경화, 불용화시키기 위한 수단으로서 도포액계 내에 잠재형 산 발생제를 함유하고 막형성 공정에서 경화 반응을 촉진시킬 수도 있다. 이와 같은 목적으로 사용되는 산 발생제로 잠재성 열 산 발생제, 잠재성 광 산 발생제를 들 수 있다.
상술된 잠재성 열 산 발생제는 통상 50 내지 450 ℃, 바람직하게는 200 내지 350 ℃로 가열함으로써 산을 발생하는 화합물이고, 술포늄염, 벤조티아졸륨염, 암모늄염, 포스포늄염 등의 오늄염이 사용되고 잠재성 광 산 발생제는 통상 1 내지 100 mJ, 바람직하게는 10 내지 50 mJ의 자외 광 조사에 의해 산을 발생시키는 화합물이다.
금속 알콕시드의 (부분) 가수분해 축합물을 주성분으로 하는 도포액의 도포막 가열 온도는 80 ℃ 내지 450 ℃의 온도가 바람직하다. 막형성 후의 막은 1 nm 내지 500 nm의 범위이지만, 통상 10 nm 내지 200 nm의 범위에서 사용된다.
이 금속 산화물막 형성용 도포액에는 유기계 절연막으로 형성된 트렌치마스크 패턴에 매립하고 또한 평탄화 표면을 형성하는 기능이 필요하다. 이 금속 산화물막 상에는 포토리소그래피를 위해 반사 방지막 그 상층에 포토레지스트가 도포되지만, 금속 산화물막에 반사 방지 기능을 부여하고, 반사 방지막 도포 공정을 생략하는 것도 가능하다.
본 발명의 듀얼 다마신 구조의 형성 방법의 대표 예는 하기 대로이다.
1. 적층 구조의 형성 공정
듀얼 다마신 구조를 형성하여야 할 기판 상에 무기계 절연막, 유기계 절연막 및 금속 산화물막을 형성하고 도 1에 도시한 바와 같은 적층 구조로 한다.
이 때, 무기계 절연막, 유기계 절연막, 무기계 절연막, 유기계 절연막 및 금속 산화물막의 순으로 적층하면, 도 2에 도시한 바와 같은 무기계 절연막 내에 미드 엣치 스토퍼층을 형성할 수 있다.
2. 트렌치 패턴 포토리소 공정
3. 금속 산화막으로의 트렌치 패턴의 전사 공정
4. 유기 절연막으로의 트렌치 패턴 전사 공정
5. 금속 산화막에 의한 유기 절연막 트렌치 패턴 마스크의 홈 매립, 평탄화 공정
6. 비아 패턴 포토리소 공정
7. 트렌치층으로의 비아 패턴 전사 공정
8. 미드 엣치 스토퍼로의 비아 패턴 전사 공정(임의 공정)
9. 비아 형성 공정
10. 트렌치 형성 공정
11. 구리 배리어층(CVD법에 의한 탄화규소, 질화규소막) 브레이크 공정, 배리어 메탈 형성 및 구리 배선 매립 공정
12. 구리의 CMP 슬러리에 의한 연마 공정
상기에서 공정 4는 유기계 절연막으로의 트렌치 패턴 전사 공정이지만, 유기계 절연막의 트렌치 마스크 패턴의 에칭과 포토레지스트의 애싱의 2개의 공정을 겸 하고 있다.
이 때에 유기계 절연막 상에 금속 산화물막을 형성해 두면 포토레지스트의 애싱시에 스토퍼막으로 기능하여 유기계 절연막층과 포토레지스트 패턴의 에칭비에 상관없이 공정할 수 있기 때문에 바람직하다.
상기에서 공정 7은 금속 산화물막이 실리카막이면 금속 산화물막으로부터 무기계 절연막으로의 에칭으로 이행할 때에 가스 조성을 크게 변화시키지 않고 에칭을 할 수 있기 때문에 바람직하다.
상기에서 공정 8은 미드 엣치 스토퍼로 기능하는 유기계 절연막으로 비아 패턴을 전사하는 공정이지만, 이 미드 엣치 스토퍼는 본 발명에서는 필수가 아니다.
그러나, 실제로 듀얼 다마신 구조 형성에 있어서, 미드 엣치 스토퍼 없이 트렌치층과 비어층의 두께를 엄밀하게 제어하는 경우, 에칭 가스에 의한 에칭율, 마스크와 절연막층과의 에칭 선택비를 정밀하게 컨트롤할 필요가 있고 미드 엣치 스토퍼를 사용하는 것으로 모든 컨트롤 파라미터를 엄밀하게 매칭시킬 필요를 없앨 수 있기 때문에 유용하다.
상기에서 공정 9는 트렌치층의 에칭 공정이지만, 하층 비아 에칭을 진행시킴으로써 금속 산화물막이 완전히 제거되어 금속 산화물막의 하층에 있던 유기 절연막의 트렌치 마스크가 나타난다. 이 트렌치 마스크 패턴을 무기계 절연막의 트렌치층으로 전사시킴으로써 듀얼 다마신 구조를 형성할 수 있다. 유기 절연막은 공정 12에서 구리 CMP 공정으로 CMP 스토퍼로서 기능하는 것이 바람직하다.
일반적으로 무기계 절연막 및 금속 산화물막의 에칭에는 플루오로 카본 가스 를 주성분으로 하는 드라이 에칭 공정이 이용된다.
또한, 유기계 절연막의 에칭 및 포토레지스트의 애싱에는 산소 플라즈마, 암모니아 플라즈마, 수소/질소 혼합 가스 플라즈마, 또는 질소/산소 혼합 가스를 주성분으로 하는 드라이 에칭 공정이 사용된다.
<실시예>
이하, 본 발명을 실시예를 들어 더욱 구체적으로 설명한다. 다만, 이하의 기재는 본 발명의 실시태양예를 개괄적으로 나타내는 것으로, 특별한 이유없이 이러한 기재에 의해 본 발명이 한정되는 것이 아니다.
또한, 실시예 및 비교예 중의 부 및 %는 특기하지 않을 뿐, 각각 중량부 및 중량%로 표시한다.
<합성예 1> 무기계 절연막용 도포액
25 % 암모니아 수용액 5 g, 초순수 320 g 및 에탄올 600 g의 혼합 용액 중에 메틸트리메톡시실란 15 g(완전 가수분해 축합물 환산 7.4 g)과 테트라에톡시실란 20 g(완전 가수분해 축합물 환산 5.8 g)을 첨가하여 60 ℃에서 3 시간 반응시킨 후, 말레산을 첨가하고 pH=2.5로 하였다. 이 용액에 프로필렌글리콜모노프로필에테르 150 g을 첨가하여 그 후, 감압하에 농축하고 고형분 함유량 9 %의 조성물 용액을 얻었다.
<합성예 2> 유기계 절연막용 도포액
9,9-비스(4-히드록시-3-메틸페닐)플루오렌 37.8 g과 탄산칼륨 37.8 g을 디메틸아세트아미드 350 g과 같이 플라스크에 넣고 질소 분위기하에 150 ℃에서 2 시간 가열하였다. 이 때, 발생되는 수증기를 계외로 제거하였다. 이 용액에 비스(4-플루오로페닐)케톤 21.8 g을 첨가하여, 165 ℃에서 10 시간 반응하였다. 반응액을 냉각시킨 후, 용액 중의 불용물을 여과로 제거하고 메탄올 중에 재침전시켰다. 이 침전물을 이온 교환수로 충분하게 세정한 후, 침전물을 시클로헥사논에 용해시키고 불용물을 제거한 후, 메탄올 중에 재침전시켰다. 이 침전물을 60 ℃의 진공 오븐 중에서 24 시간 건조시킴으로써 중합체를 얻었다.
중합체 2 g을 시클로헥사논 18 g에 용해시키고 0.2 ㎛ 공경의 폴리테트라플루오로에틸렌(테플론) 제조 필터로 여과하여 유기계 절연막용 도포액을 얻었다.
<합성예 3> 금속 산화물막 형성용 도포액의 조정
(1) 테트라메톡시실란 106.4 g을 프로필렌글리콜모노프로필에테르 298 g에 용해시킨 후, 쓰리원 모터로 교반시키고 용액 온도를 60 ℃로 안정시켰다. 다음에 말레산 2.1 g을 용해시킨 이온 교환수 50 g을 1 시간에 걸쳐 용액에 첨가하였다. 그 후, 60 ℃에서 4 시간 반응시킨 후, 반응액을 실온까지 냉각하였다. 50 ℃에서 반응액으로부터 메탄올을 포함하는 용액을 90 g 증발기로 제거한 후, 프로필렌글리콜모노프로필에테르 643 g를 첨가하여 용액 (A)를 얻었다.
(2) 용액 (A)에, (B) 성분으로서 비스(4-t-부틸페닐)요오드늄캄파술포네이트 5 g을 첨가하고 0.2 ㎛ 공경의 테플론 제조 필터로 여과하여 금속 산화물막 형성용 도포액을 얻었다.
<실시예 1>
(1) 실리콘 기판상에 400 nm의 질화규소막을 통상의 플라즈마 CVD법에 의해 형성시킨 기판 상에, 합성예 1에서 제조한 무기계 절연막용 도포액을 스핀코팅법에 의해 도포하여, 대기 중 80 ℃에서 5 분간, 계속해서 질소하 200 ℃에서 5 분간 가열시킨 후, 진공하 425 ℃에서 1 시간 가열함으로써 막 두께 300 nm의 무기계 절연막을 포함하는 비아 절연층 (A)를 형성하였다.
형성된 비아 절연층을 UV 오존 처리로써 표면을 활성화시킨 후, 상기 합성예 2에서 제조한 유기계 절연막용 도포액을 스핀코팅법으로 도포하여, 80 ℃에서 1분간, 200 ℃에서 2분간 건조하고 450 ℃의 질소 분위기로 5분간 기판을 가열하여 막 두께 50 nm의 미드 엣치 스토퍼층 (B)를 형성하였다.
형성된 미드 엣치 스토퍼층에 합성예 1에서 얻어진 무기계 절연막용 도포액 (1)을 상기 비아 절연층의 형성과 동일하게 도포하고 가열하여 막 두께 300 nm의 트렌치 절연층 (C)를 형성하였다. 트렌치 절연층 (C)를 UV 오존 처리함으로써 표면을 활성화시킨 후, 유기계 절연막 도포액을 상기 미드 엣치 스토퍼층 (B)의 형성과 같이 도포하고 가열하여 막 두께 100 nm의 하층 하드마스크층 (D)를 형성하였다. 계속해서, 합성예 3에서 제조한 금속 산화물막용 도포액 스핀코팅법으로 도포하여, 200 ℃의 핫 플레이트로 2분간 건조하여 막 두께 30 nm의 상층 하드마스크층 (E)를 형성하였다.
(2) 계속해서, KrF 포지티브형 포토 레지스트를 이용하고 0.35 ㎛ 트렌치 패턴 레지스트 마스크를 상층 하드마스크층 (E)에 형성한 후, 플루오로 카본계 드라이 에칭 가스를 이용하여 상층 하드마스크층 (E)로 트렌치 패턴을 전사하였다.
(3) 또한, NH3 가스 플라즈마를 사용하여 트렌치 패턴을 하층 하드마스크층 (D)로 전사하였다.
(4) 웨트 세정액 (pH=8)을 사용하여 트렌치 패턴 레지스트 마스크의 나머지를 제거하였다.
(5) 다음으로 합성예 3에서 제조한 금속 산화물막용 도포액을 트렌치 패턴이 형성된 상층 하드마스크층 위에 막 두께 50 nm이 되도록 (1)과 동일하게 하여 도포, 가열하여 상층 하드마스크층 (E')을 형성하였다.
(4) KrF 포지티브형 포토레지스트를 사용하여 0.25 ㎛ 홀 패턴 레지스트 마스크를 상층 하드마스크층 (E') 위에 형성하였다.
(6) 계속해서 플루오로 카본계 드라이 에칭 가스를 사용하여 상층 하드 마스크 (E)에 홀 패턴을 전사하고 또한, 트렌치 절연층 (C)까지 홀 패턴을 파서 미드 엣치 스토퍼층 (B)를 노출시켰다.
(7) 계속해서 NH3 가스 플라즈마를 이용하여 홀 패턴을 미드 엣치 스토퍼층 (B)로 전사하였다.
(8) 다시 한번, 플루오로 카본계 드라이 에칭 가스로 비어층 (A)로의 홀 형성을 진행시킴과 동시에 상층 하드 마스크 (E)를 제거했다. 계속해서 별도의 플루오로 카본계 드라이 에칭 가스로 전환하여, 트렌치층 (C)에 홈 형성을 행하였다.
(9) 마지막으로, 하층 질소화 규소막을 플루오로 카본계 드라이 에칭 가스로써 블레이크하여, 홈 및 홀 형성을 종료하였다.
(10) 홈 및 홀을 웨트 세정약액 (pH 8)을 이용하여 세정하고 에칭 가스에 의한 석출물을 제거하였다. PVD법에 의해 Ta 배리어 금속층 1 nm을 형성하고, 또한 PVD법으로 구리 시드층을 형성, 도금법으로 홀 및 홈으로 구리 배선을 매립하였다.
(11) 오버레이된 구리는 CMP에 의해 제거하고, 또한, 상층의 배리어 금속을 제거하여 구리 듀얼 다마신 배선 형성을 종료하였다.
(12) 웨이퍼 단면을 주사형 전자 현미경으로 관찰하여 확실하게 구리 듀얼 다마신 배선이 형성되어 있는 것을 확인하였다.
본 발명은 상기와 같은 구성으로 하는 것으로 CVD 계 탄화규소, 질화규소, 실리카막의 조합을 사용하는 경우에 문제가 되는 에칭시의 선택비 문제를 없앨 수 있다. 또한, 절연층, 하드마스크를 포함해서 거의 모든 재료를 도포계 재료로 구성할 수 있기 때문에, 공정 플로우를 간략화할 수 있는 장점이 있다.
Claims (12)
- 무기계 절연막 상에 유기계 절연막 및 금속 산화물막을 적층하는 공정을 포함하는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 무기계 절연막 내에 미드 엣치 스토퍼층을 갖는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 무기계 절연막이 비유전률 1.5 내지 3.2의 실록산계 절연막인 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제3항에 있어서, 비유전률 1.5 내지 3.2의 실록산계 절연막이 탄화수소기를 갖는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 유기계 절연막이 유리 전이점 400 ℃ 이상, 열분해 온도 500 ℃ 이상의 유기 중합체인 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제5항에 있어서, 유기 중합체가 폴리아릴렌, 폴리아릴렌에테르, 폴리벤조옥사졸, 폴리이미드에서 선택되는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 금속 산화물막층이 B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Zn, Cd, P, As, Sb, Bi, Ce에서 선택되는 1종 이상의 금속의 산화물인 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 금속 산화물층이 반사 방지능을 갖는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 무기계 절연막을 폴리실록산 및 유기 용매를 포함하는 도포액을 도포하고 가열함으로써 형성하는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 유기계 절연막을 유리 전이점 400 ℃ 이상, 열 분해 온도 500 ℃ 이상의 유기 중합체 및 유기 용매를 포함하는 도포액을 도포하고 가열함으로써 형성하는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항에 있어서, 금속 산화물막을 B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Zn, Cd, P, As, Sb, Bi, Ce에서 선택되는 1종 이상의 금속 알콕시드를 가수분해하고 축합하여 얻어지는 화합물과 유기 용매를 포함하는 도포액을 도포하고 가열함으로써 형성하는 것을 특징으로 하는 듀얼 다마신 구조의 형성 방법.
- 제1항 내지 제11항 중 어느 한 항에 기재된 방법에 의해 형성된 듀얼 다마신 구조.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00101186 | 2001-03-30 | ||
JP2001101186A JP2002299441A (ja) | 2001-03-30 | 2001-03-30 | デュアルダマシン構造の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020077174A KR20020077174A (ko) | 2002-10-11 |
KR100822138B1 true KR100822138B1 (ko) | 2008-04-15 |
Family
ID=18954542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020016962A KR100822138B1 (ko) | 2001-03-30 | 2002-03-28 | 듀얼 다마신 구조의 형성 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20020142586A1 (ko) |
EP (1) | EP1246239B1 (ko) |
JP (1) | JP2002299441A (ko) |
KR (1) | KR100822138B1 (ko) |
DE (1) | DE60227736D1 (ko) |
TW (1) | TW586204B (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60217247T2 (de) * | 2001-09-28 | 2007-10-04 | Jsr Corp. | Gestapelte Schicht, isolierender Film und Substrate für Halbleiter |
US7238462B2 (en) | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
TW200505966A (en) * | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
TW200428586A (en) * | 2003-04-08 | 2004-12-16 | Matsushita Electric Ind Co Ltd | Electronic device and the manufacturing method thereof |
WO2004090058A1 (en) * | 2003-04-09 | 2004-10-21 | Lg Chem, Ltd. | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same |
JP2004356582A (ja) * | 2003-05-30 | 2004-12-16 | Asahi Glass Co Ltd | 積層体 |
KR100583957B1 (ko) * | 2003-12-03 | 2006-05-26 | 삼성전자주식회사 | 희생금속산화막을 채택하여 이중다마신 금속배선을형성하는 방법 |
US20050196535A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Solvents and methods using same for removing silicon-containing residues from a substrate |
CN100481378C (zh) * | 2004-05-21 | 2009-04-22 | Jsr株式会社 | 层叠体及半导体装置 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
WO2006058150A2 (en) * | 2004-11-23 | 2006-06-01 | Massachusetts Institute Of Technology | Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching |
US20060176683A1 (en) * | 2005-02-08 | 2006-08-10 | Chen-Cheng Chien | Outdoor light |
US7910283B2 (en) * | 2005-11-21 | 2011-03-22 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method |
KR100802226B1 (ko) * | 2006-12-21 | 2008-02-11 | 주식회사 하이닉스반도체 | 듀얼 다마신 패턴 형성 방법 |
US8653217B2 (en) | 2007-05-01 | 2014-02-18 | Dow Corning Corporation | Method for forming anti-reflective coating |
JP2009123880A (ja) * | 2007-11-14 | 2009-06-04 | Showa Denko Kk | 研磨組成物 |
US7981308B2 (en) * | 2007-12-31 | 2011-07-19 | Robert Bosch Gmbh | Method of etching a device using a hard mask and etch stop layer |
KR100930672B1 (ko) * | 2008-01-11 | 2009-12-09 | 제일모직주식회사 | 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법 |
US9023433B2 (en) * | 2008-01-15 | 2015-05-05 | Dow Corning Corporation | Silsesquioxane resins and method of using them to form an antireflective coating |
EP2373722A4 (en) * | 2008-12-10 | 2013-01-23 | Dow Corning | SILSESQUIOXAN RESINS |
JP5462603B2 (ja) * | 2009-11-26 | 2014-04-02 | 宇部エクシモ株式会社 | 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
EP2363512A1 (en) * | 2010-02-04 | 2011-09-07 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
US8703625B2 (en) * | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
JP5663959B2 (ja) | 2010-05-28 | 2015-02-04 | Jsr株式会社 | 絶縁パターン形成方法及びダマシンプロセス用絶縁パターン形成材料 |
US9269563B2 (en) * | 2014-06-06 | 2016-02-23 | Applied Materials, Inc. | Methods for forming interconnect structure utilizing selective protection process for hardmask removal process |
JP5835425B2 (ja) * | 2014-07-10 | 2015-12-24 | Jsr株式会社 | ダマシンプロセス用絶縁パターン形成材料 |
CN113838798B (zh) * | 2020-06-08 | 2024-05-17 | 芯恩(青岛)集成电路有限公司 | 一种刻蚀方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980064472U (ko) * | 1997-04-29 | 1998-11-25 | 김영귀 | 기관의 오일팬 구조 |
WO2000075988A1 (en) * | 1999-06-09 | 2000-12-14 | Alliedsignal Inc. | Integrated circuits with multiple low dielectric-constant inter-metal dielectrics |
KR20000076915A (ko) * | 1999-03-19 | 2000-12-26 | 니시무로 타이죠 | 반도체 장치 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235353B1 (en) * | 1998-02-24 | 2001-05-22 | Alliedsignal Inc. | Low dielectric constant films with high glass transition temperatures made by electron beam curing |
US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
US6475904B2 (en) * | 1998-12-03 | 2002-11-05 | Advanced Micro Devices, Inc. | Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques |
US6498399B2 (en) * | 1999-09-08 | 2002-12-24 | Alliedsignal Inc. | Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits |
US6558747B2 (en) * | 1999-09-29 | 2003-05-06 | Kabushiki Kaisha Toshiba | Method of forming insulating film and process for producing semiconductor device |
US6451683B1 (en) * | 2000-08-28 | 2002-09-17 | Micron Technology, Inc. | Damascene structure and method of making |
-
2001
- 2001-03-30 JP JP2001101186A patent/JP2002299441A/ja active Pending
-
2002
- 2002-03-12 US US10/094,647 patent/US20020142586A1/en not_active Abandoned
- 2002-03-27 TW TW091106026A patent/TW586204B/zh not_active IP Right Cessation
- 2002-03-28 EP EP02007149A patent/EP1246239B1/en not_active Expired - Lifetime
- 2002-03-28 DE DE60227736T patent/DE60227736D1/de not_active Expired - Lifetime
- 2002-03-28 KR KR1020020016962A patent/KR100822138B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980064472U (ko) * | 1997-04-29 | 1998-11-25 | 김영귀 | 기관의 오일팬 구조 |
KR20000076915A (ko) * | 1999-03-19 | 2000-12-26 | 니시무로 타이죠 | 반도체 장치 |
WO2000075988A1 (en) * | 1999-06-09 | 2000-12-14 | Alliedsignal Inc. | Integrated circuits with multiple low dielectric-constant inter-metal dielectrics |
Also Published As
Publication number | Publication date |
---|---|
JP2002299441A (ja) | 2002-10-11 |
TW586204B (en) | 2004-05-01 |
DE60227736D1 (de) | 2008-09-04 |
US20020142586A1 (en) | 2002-10-03 |
EP1246239A1 (en) | 2002-10-02 |
KR20020077174A (ko) | 2002-10-11 |
EP1246239B1 (en) | 2008-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100822138B1 (ko) | 듀얼 다마신 구조의 형성 방법 | |
US7291567B2 (en) | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | |
US7514151B2 (en) | Insulating film and method for forming the same, and film-forming composition | |
KR100739273B1 (ko) | 레지스트 하층막용 조성물 및 그의 제조 방법 | |
KR101140535B1 (ko) | 유기 실리카계 막의 형성 방법, 유기 실리카계 막, 배선구조체, 반도체 장치 및 막 형성용 조성물 | |
US8404786B2 (en) | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | |
EP1615260A2 (en) | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device | |
EP1296365B1 (en) | Method of film formation | |
KR100618487B1 (ko) | 막 형성용 조성물, 막의 형성 방법 및 절연막 | |
JP3906916B2 (ja) | 膜形成用組成物、膜形成方法および膜 | |
JPWO2005108469A1 (ja) | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 | |
US6645881B2 (en) | Method of forming coating film, method of manufacturing semiconductor device and coating solution | |
JP4662000B2 (ja) | 膜形成用組成物、膜の形成方法および絶縁膜 | |
JP4158001B2 (ja) | 膜形成用組成物、膜の形成方法および低密度化膜 | |
JP2005179587A (ja) | 膜形成用組成物、膜の形成方法およびシリカ系膜 | |
JP4022802B2 (ja) | 膜形成用組成物、膜の形成方法および絶縁膜 | |
JP2001286821A (ja) | シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置 | |
JP4101989B2 (ja) | ポリオルガノシロキサン系組成物の製造方法、ポリオルガノシロキサン系組成物、および膜 | |
JP2004059738A (ja) | 膜形成用組成物、膜の形成方法およびシリカ系膜 | |
JP3994258B2 (ja) | 形成用組成物の製造方法および膜の形成方法 | |
JP2005126589A (ja) | 膜形成用組成物の製造方法、膜形成用組成物およびシリカ系膜 | |
JP4244435B2 (ja) | 半導体素子のレジスト下層膜用組成物 | |
JP2001335745A (ja) | 膜形成用組成物、膜の形成方法およびシリカ系膜 | |
JP4411688B2 (ja) | 膜形成用組成物の製造方法、膜形成用組成物および絶縁膜形成用材料 | |
JP2000336314A (ja) | 膜形成用組成物および絶縁膜形成用材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130321 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140319 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |