KR100734198B1 - 구조화 가능 물질, 이의 제조방법 및 이의 용도 - Google Patents
구조화 가능 물질, 이의 제조방법 및 이의 용도 Download PDFInfo
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- KR100734198B1 KR100734198B1 KR1020037001500A KR20037001500A KR100734198B1 KR 100734198 B1 KR100734198 B1 KR 100734198B1 KR 1020037001500 A KR1020037001500 A KR 1020037001500A KR 20037001500 A KR20037001500 A KR 20037001500A KR 100734198 B1 KR100734198 B1 KR 100734198B1
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Abstract
Description
R은 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시알킬, 알콕시 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐(여기서, 각각의 경우, 하나 이상의 수소원자는 할로겐(예: Cl 또는 F) 또는 CN으로 치환될 수 있고, 하나 이상의 인접하지 않은 탄소원자는 -O-, -S-, -CO-, -COO- 또는 -O-CO-로 치환될 수 있다)이고,
Ar', Ar", Ar"' 및 Ar""은 동일하거나 상이할 수 있고, 각각 탄소수 4 내지 14의 치환되거나 치환되지 않은 방향족 또는 헤테로 방향족물일 수 있음].
Claims (8)
- 하나 이상의 수소원자가 하기 화학식 (A)의 기로 치환됨을 특징으로 하는,(A) PPV 또는 폴리플루오렌 또는 폴리스피로계 단독중합체 또는 공중합체,(B) 3차원적 스피로비플루오렌 구조를 갖는 저분자량 화합물,(C) 3차원적 트립티센 구조를 갖는 저분자량 화합물,(D) 2차원적 트리페닐렌 구조를 갖는 저분자량 화합물,(E) 페릴렌테트라카르복실산 디이미드의 유도체,(F) 퀴나시리돈의 유도체,(G) 유기 란타나이드 착물,(H) 알루미늄 트리스-퀴녹살리네이트의 유도체 및(I) 옥사디아졸 유도체로 이루어진 군으로부터 선택된,전자 제품용 저분자량 또는 중합체성 유기 전계발광 또는 레이저 물질 :[화학식 A][식 중,R은 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시알킬, 알콕시 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐{여기서, 각각의 경우, 하나 이상의 수소원자는 Cl 또는 F 와 같은 할로겐 또는 CN으로 치환될 수 있고, 하나 이상의 인접하지 않은 탄소원자는 -O-, -S-, -CO-, -COO- 또는 -O-CO-로 치환될 수 있음}이고,Z는 -O-, -S-, -CO-, -COO-, -O-CO- 또는 2가 기 -(CR1R2)n-{여기서, R1 및 R2는 각각 독립적으로 수소, 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시, 알콕시알킬 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐이고, 각각의 경우, 하나 이상의 수소원자는 Cl 또는 F 와 같은 할로겐 또는 CN으로 치환될 수 있고, 하나 이상의 인접하지 않은 탄소원자는 -O-, -S-, -CO-, -COO- 또는 -O-CO-로 치환될 수 있음}이고,X는 2가 기 -(CR1R2)n-{여기서, R1 및 R2는 각각 독립적으로 수소, 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시, 알콕시알킬 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐이고, 각각의 경우, 하나 이상의 수소원자는 Cl 또는 F 와 같은 할로겐 또는 CN으로 치환될 수 있음}이고,n은 1 내지 20 의 정수이며,이들 화학식 (A)의 기의 수는 이용 가능한, 즉 치환 가능한 수소원자의 최대 수로써 제한됨].
- 하나 이상의 수소원자가 화학식 (A)의 기로 치환됨을 특징으로 하는,(L) 알루미늄 트리스-퀴녹살리네이트의 유도체 및(M) 옥사디아졸 유도체로 이루어진 군으로부터 선택된, 전자 제품용 저분자량 또는 중합체성 유기 전자 전도체 물질 :[화학식 A][식 중,R은 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시알킬, 알콕시 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐{여기서, 각각의 경우, 하나 이상의 수소원자는 Cl 또는 F 와 같은 할로겐 또는 CN으로 치환될 수 있고, 하나 이상의 인접하지 않은 탄소원자는 -O-, -S-, -CO-, -COO- 또는 -O-CO-로 치환될 수 있음}이고,Z는 -O-, -S-, -CO-, -COO-, -O-CO- 또는 2가 기 -(CR1R2)n-{여기서, R1 및 R2는 각각 독립적으로 수소, 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시, 알콕시알킬 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐이고, 각각의 경우, 하나 이상의 수소원자는 할로겐(예: Cl 또는 F) 또는 CN으로 치환될 수 있고, 하나 이상의 인접하지 않은 탄소원자는 -O-, -S-, -CO-, -COO- 또는 -O-CO-로 치환될 수 있음}이고,X는 2가 기 -(CR1R2)n-{여기서, R1 및 R2는 각각 독립적으로 수소, 탄소수 1 내지 20의 직쇄, 분지형 또는 사이클릭 알킬, 알콕시, 알콕시알킬 또는 티오알콕시기, C4-C18-아릴 또는 C2-C10-알케닐이고, 각각의 경우, 하나 이상의 수소원자는 Cl 또는 F 와 같은 할로겐 또는 CN으로 치환될 수 있음}이고,n은 1 내지 20 의 정수이며,이들 화학식 (A)의 기의 수는 이용 가능한, 즉 치환 가능한 수소원자의 최대 수로써 제한됨].
- 제 1 항 또는 제 2 항에 있어서, 특정한 구조 내에서, 옥세탄 환을 포함한 모든 유기 환을 기준으로 하여, 옥세탄 환의 몰 비로써 나타낸 화학식 (A)에 따른 옥세탄기의 함량이 0.01 내지 0.6 임을 특징으로 하는 물질.
- 구조화 발광 다이오드, 레이저, 태양 전지, 도파관 또는 집적 회로를 제조하기 위한, 제 1 항 또는 제 2 항에 따른 물질의 사용 방법.
- 1 층 이상이 제 1 항 또는 제 2 항에 따른 물질 하나 이상으로부터 제조된, 1 층 이상의 활성층을 갖는 구조화 유기 전자 소자.
- 제 5 항에 있어서, 유기 발광 다이오드, 레이저, 도파관, 태양 전지 또는 유기 회로임을 특징으로 하는 소자.
- 제 5 항에 있어서, 활성 층들의 굴절률이 상이함을 특징으로 하는 소자.
- 활성 물질의 이산 층을 도포하고 이를 후속 가교결합시키고, 제 1 항 또는 제 2 항에 따른 물질 하나 이상의 추가의 활성층을 도포하고 이를 후속 가교결합시키고, 임의로, 전술된 단계를 반복하여 목적하는 수의 층을 적층시킴을 포함하는, 1 층 이상이 제 1 항 또는 제 2 항에 따른 물질 하나 이상으로부터 제조된, 2 층 이상의 활성층을 갖는 다층 유기 전자 소자의 제조방법.
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KR102385225B1 (ko) * | 2017-07-12 | 2022-04-11 | 삼성디스플레이 주식회사 | 유기막 형성용 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법 |
KR102324615B1 (ko) * | 2017-10-30 | 2021-11-09 | 주식회사 엘지화학 | 공중합체, 및 이를 포함하는 유기발광소자. |
DE102018004733A1 (de) * | 2018-06-14 | 2019-12-19 | Merck Patent Gmbh | Verfahren zur Herstellung eines elektronischen Bauteils enthaltend eine selbstorganisierte Monolage |
CN118496480A (zh) | 2018-11-05 | 2024-08-16 | 康宁股份有限公司 | 用于有机薄膜晶体管的可uv图案化的聚合物掺混物 |
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- 2001-08-01 CN CNB018129056A patent/CN1244607C/zh not_active Expired - Lifetime
- 2001-08-01 JP JP2002516261A patent/JP5274745B2/ja not_active Expired - Fee Related
- 2001-08-01 DE DE50108918T patent/DE50108918D1/de not_active Expired - Lifetime
- 2001-08-01 WO PCT/EP2001/009176 patent/WO2002010129A2/de active IP Right Grant
- 2001-08-01 KR KR1020037001500A patent/KR100734198B1/ko active IP Right Grant
- 2001-08-01 EP EP01982205A patent/EP1307498B1/de not_active Expired - Lifetime
- 2001-08-01 US US10/343,465 patent/US7592414B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
EP1307498B1 (de) | 2006-02-08 |
DE10037391A1 (de) | 2002-02-14 |
US20040054152A1 (en) | 2004-03-18 |
AU5767701A (en) | 2002-01-31 |
JP2004505169A (ja) | 2004-02-19 |
WO2002010129A2 (de) | 2002-02-07 |
JP5274745B2 (ja) | 2013-08-28 |
EP1307498A2 (de) | 2003-05-07 |
CN1244607C (zh) | 2006-03-08 |
WO2002010129A3 (de) | 2002-06-20 |
DE50108918D1 (de) | 2006-04-20 |
US7592414B2 (en) | 2009-09-22 |
CN1443209A (zh) | 2003-09-17 |
KR20030057525A (ko) | 2003-07-04 |
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