KR100718937B1 - 자기 정렬된 실리콘 카바이드 바이폴라 접합 트랜지스터를제조하는 방법 및 이에 따라 제조되는 장치 - Google Patents

자기 정렬된 실리콘 카바이드 바이폴라 접합 트랜지스터를제조하는 방법 및 이에 따라 제조되는 장치 Download PDF

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KR100718937B1
KR100718937B1 KR1020037005346A KR20037005346A KR100718937B1 KR 100718937 B1 KR100718937 B1 KR 100718937B1 KR 1020037005346 A KR1020037005346 A KR 1020037005346A KR 20037005346 A KR20037005346 A KR 20037005346A KR 100718937 B1 KR100718937 B1 KR 100718937B1
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Prior art keywords
silicon carbide
layer
carbide layer
conductivity type
pillar
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Korean (ko)
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KR20030061377A (ko
Inventor
싱란비르
아가왈어낸트케이.
라세이-형
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Bipolar Transistors (AREA)
KR1020037005346A 2000-12-11 2000-12-11 자기 정렬된 실리콘 카바이드 바이폴라 접합 트랜지스터를제조하는 방법 및 이에 따라 제조되는 장치 Expired - Lifetime KR100718937B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/033627 WO2002049115A1 (en) 2000-12-11 2000-12-11 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

Publications (2)

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KR20030061377A KR20030061377A (ko) 2003-07-18
KR100718937B1 true KR100718937B1 (ko) 2007-05-16

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KR1020037005346A Expired - Lifetime KR100718937B1 (ko) 2000-12-11 2000-12-11 자기 정렬된 실리콘 카바이드 바이폴라 접합 트랜지스터를제조하는 방법 및 이에 따라 제조되는 장치

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EP (1) EP1342271B1 (https=)
JP (1) JP5178988B2 (https=)
KR (1) KR100718937B1 (https=)
CN (1) CN1227742C (https=)
AU (1) AU2001224295A1 (https=)
CA (1) CA2425541C (https=)
WO (1) WO2002049115A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4777699B2 (ja) * 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN103681816A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 一种具有浮置环结构的双极型晶体管

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943394A (en) 1988-01-30 1990-07-24 Kernforschungsanlage Julich Gesellschaft Mit Beschrankter Haftung Method of storing radioactive waste without risk of hydrogen escape
WO2000074129A1 (en) * 1999-05-31 2000-12-07 Telefonaktiebolaget Lm Ericsson Collector-up rf power transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202962A (ja) * 1987-02-18 1988-08-22 Fujitsu Ltd バイポ−ラトランジスタおよび製造方法
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
GB8926414D0 (en) * 1989-11-18 1990-01-10 Lsi Logic Europ Bipolar junction transistors
JPH0548083A (ja) * 1991-08-09 1993-02-26 Toshiba Corp 電力用半導体素子
JPH05335497A (ja) * 1992-06-01 1993-12-17 Nippon Steel Corp 半導体装置の製造方法
DE4301333C2 (de) * 1993-01-20 2003-05-15 Daimler Chrysler Ag Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
JP3152046B2 (ja) * 1994-01-10 2001-04-03 富士電機株式会社 バイポーラトランジスタおよびその製造方法
JPH0878431A (ja) * 1994-09-05 1996-03-22 Fuji Electric Co Ltd 炭化けい素たて型バイポーラトランジスタおよびその製造方法
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943394A (en) 1988-01-30 1990-07-24 Kernforschungsanlage Julich Gesellschaft Mit Beschrankter Haftung Method of storing radioactive waste without risk of hydrogen escape
WO2000074129A1 (en) * 1999-05-31 2000-12-07 Telefonaktiebolaget Lm Ericsson Collector-up rf power transistor

Also Published As

Publication number Publication date
EP1342271A1 (en) 2003-09-10
JP5178988B2 (ja) 2013-04-10
WO2002049115A1 (en) 2002-06-20
KR20030061377A (ko) 2003-07-18
AU2001224295A1 (en) 2002-06-24
EP1342271B1 (en) 2013-11-20
CA2425541A1 (en) 2002-06-20
CA2425541C (en) 2014-08-05
JP2004516655A (ja) 2004-06-03
CN1227742C (zh) 2005-11-16
CN1461497A (zh) 2003-12-10

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