JP5178988B2 - 炭化ケイ素中の自己整合バイポーラ接合トランジスタの製造方法およびそれにより作製されるデバイス - Google Patents

炭化ケイ素中の自己整合バイポーラ接合トランジスタの製造方法およびそれにより作製されるデバイス Download PDF

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JP5178988B2
JP5178988B2 JP2002550320A JP2002550320A JP5178988B2 JP 5178988 B2 JP5178988 B2 JP 5178988B2 JP 2002550320 A JP2002550320 A JP 2002550320A JP 2002550320 A JP2002550320 A JP 2002550320A JP 5178988 B2 JP5178988 B2 JP 5178988B2
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silicon carbide
carbide layer
layer
conductivity type
pillar
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Japanese (ja)
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JP2004516655A5 (https=
JP2004516655A (ja
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シン ランバー
ケイ．アガーウォル アナン
リャ セイ−ヒュン
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Bipolar Transistors (AREA)
JP2002550320A 2000-12-11 2000-12-11 炭化ケイ素中の自己整合バイポーラ接合トランジスタの製造方法およびそれにより作製されるデバイス Expired - Lifetime JP5178988B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/033627 WO2002049115A1 (en) 2000-12-11 2000-12-11 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

Publications (3)

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JP2004516655A JP2004516655A (ja) 2004-06-03
JP2004516655A5 JP2004516655A5 (https=) 2005-05-19
JP5178988B2 true JP5178988B2 (ja) 2013-04-10

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JP2002550320A Expired - Lifetime JP5178988B2 (ja) 2000-12-11 2000-12-11 炭化ケイ素中の自己整合バイポーラ接合トランジスタの製造方法およびそれにより作製されるデバイス

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EP (1) EP1342271B1 (https=)
JP (1) JP5178988B2 (https=)
KR (1) KR100718937B1 (https=)
CN (1) CN1227742C (https=)
AU (1) AU2001224295A1 (https=)
CA (1) CA2425541C (https=)
WO (1) WO2002049115A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4777699B2 (ja) * 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN103681816A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 一种具有浮置环结构的双极型晶体管

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202962A (ja) * 1987-02-18 1988-08-22 Fujitsu Ltd バイポ−ラトランジスタおよび製造方法
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
DE3802755A1 (de) 1988-01-30 1989-08-10 Kernforschungsanlage Juelich Verfahren zur einlagerung von radioaktiven abfallstoffen
GB8926414D0 (en) * 1989-11-18 1990-01-10 Lsi Logic Europ Bipolar junction transistors
JPH0548083A (ja) * 1991-08-09 1993-02-26 Toshiba Corp 電力用半導体素子
JPH05335497A (ja) * 1992-06-01 1993-12-17 Nippon Steel Corp 半導体装置の製造方法
DE4301333C2 (de) * 1993-01-20 2003-05-15 Daimler Chrysler Ag Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
JP3152046B2 (ja) * 1994-01-10 2001-04-03 富士電機株式会社 バイポーラトランジスタおよびその製造方法
JPH0878431A (ja) * 1994-09-05 1996-03-22 Fuji Electric Co Ltd 炭化けい素たて型バイポーラトランジスタおよびその製造方法
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법
SE516338C2 (sv) * 1999-05-31 2001-12-17 Ericsson Telefon Ab L M RF-effekttransistor med kollektor upp

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Publication number Publication date
EP1342271A1 (en) 2003-09-10
WO2002049115A1 (en) 2002-06-20
KR20030061377A (ko) 2003-07-18
AU2001224295A1 (en) 2002-06-24
EP1342271B1 (en) 2013-11-20
KR100718937B1 (ko) 2007-05-16
CA2425541A1 (en) 2002-06-20
CA2425541C (en) 2014-08-05
JP2004516655A (ja) 2004-06-03
CN1227742C (zh) 2005-11-16
CN1461497A (zh) 2003-12-10

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