AU2001224295A1 - Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices - Google Patents

Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

Info

Publication number
AU2001224295A1
AU2001224295A1 AU2001224295A AU2429501A AU2001224295A1 AU 2001224295 A1 AU2001224295 A1 AU 2001224295A1 AU 2001224295 A AU2001224295 A AU 2001224295A AU 2429501 A AU2429501 A AU 2429501A AU 2001224295 A1 AU2001224295 A1 AU 2001224295A1
Authority
AU
Australia
Prior art keywords
fabricating
self
silicon carbide
bipolar junction
junction transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001224295A
Inventor
Anant K. Agarwal
Sei-Hyung Rya
Ranbir Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2001224295A1 publication Critical patent/AU2001224295A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
AU2001224295A 2000-12-11 2000-12-11 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Abandoned AU2001224295A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/033627 WO2002049115A1 (en) 2000-12-11 2000-12-11 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

Publications (1)

Publication Number Publication Date
AU2001224295A1 true AU2001224295A1 (en) 2002-06-24

Family

ID=21742063

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001224295A Abandoned AU2001224295A1 (en) 2000-12-11 2000-12-11 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

Country Status (7)

Country Link
EP (1) EP1342271B1 (en)
JP (1) JP5178988B2 (en)
KR (1) KR100718937B1 (en)
CN (1) CN1227742C (en)
AU (1) AU2001224295A1 (en)
CA (1) CA2425541C (en)
WO (1) WO2002049115A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4777699B2 (en) * 2005-06-13 2011-09-21 本田技研工業株式会社 Bipolar semiconductor device and manufacturing method thereof
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP4046140B1 (en) * 2006-11-29 2008-02-13 住友電気工業株式会社 Method for manufacturing silicon carbide semiconductor device
CN103681816A (en) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 Bipolar transistor with floating ring structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202962A (en) * 1987-02-18 1988-08-22 Fujitsu Ltd Bipolar transistor and manufacture thereof
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
DE3802755A1 (en) 1988-01-30 1989-08-10 Kernforschungsanlage Juelich METHOD FOR STORING RADIOACTIVE WASTE
GB8926414D0 (en) * 1989-11-18 1990-01-10 Lsi Logic Europ Bipolar junction transistors
JPH0548083A (en) * 1991-08-09 1993-02-26 Toshiba Corp Power semiconductor element
JPH05335497A (en) * 1992-06-01 1993-12-17 Nippon Steel Corp Manufacture of semiconductor device
DE4301333C2 (en) * 1993-01-20 2003-05-15 Daimler Chrysler Ag Process for the preparation of silicon germanium heterobipolar transistors
JP3152046B2 (en) * 1994-01-10 2001-04-03 富士電機株式会社 Bipolar transistor and method of manufacturing the same
JPH0878431A (en) * 1994-09-05 1996-03-22 Fuji Electric Co Ltd Silicon carbide vertical type bipolar transistor and its manufacture
JPH08288500A (en) * 1995-04-20 1996-11-01 Hitachi Ltd Silicon carbide semiconductor element and its manufacture and use
KR0171000B1 (en) * 1995-12-15 1999-02-01 양승택 Bjt structure of self defined base electrode
SE516338C2 (en) * 1999-05-31 2001-12-17 Ericsson Telefon Ab L M RF power transistor with collector up

Also Published As

Publication number Publication date
JP5178988B2 (en) 2013-04-10
KR20030061377A (en) 2003-07-18
CA2425541A1 (en) 2002-06-20
EP1342271B1 (en) 2013-11-20
CN1461497A (en) 2003-12-10
KR100718937B1 (en) 2007-05-16
WO2002049115A1 (en) 2002-06-20
CN1227742C (en) 2005-11-16
EP1342271A1 (en) 2003-09-10
JP2004516655A (en) 2004-06-03
CA2425541C (en) 2014-08-05

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