CN103681816A - Bipolar transistor with floating ring structure - Google Patents
Bipolar transistor with floating ring structure Download PDFInfo
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- CN103681816A CN103681816A CN201210330637.8A CN201210330637A CN103681816A CN 103681816 A CN103681816 A CN 103681816A CN 201210330637 A CN201210330637 A CN 201210330637A CN 103681816 A CN103681816 A CN 103681816A
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- floating
- ohmic contact
- collector region
- ring
- double pole
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- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 8
- 230000003139 buffering effect Effects 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- -1 boron ion Chemical class 0.000 claims description 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005284 basis set Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a bipolar transistor with a floating ring structure. The bipolar transistor comprises a substrate, a buffer zone, a collector region, a base region and an emission area, wherein ohmic contact areas are respectively arranged on the boundaries of the collector region and the base region; an emitting electrode is positioned on the emission area; a collecting electrode is positioned on the ohmic contact area of the collector region; a base electrode is positioned on the ohmic contact area of the base region; a plurality of floating rings are arranged at the periphery of the ohmic contact area of the collector region, positioned on the surface of the collector region and close to the ohmic contact area. Due to the adoption of the scheme, the technical problem that over high electric field strength at the edge of the ohmic contact area of the collecting electrode caused by an LBJT suppresses the improvement of blocking voltage in the prior art is avoided. Therefore, the bipolar transistor can bear higher blocking voltage.
Description
Technical field
The present invention relates to a kind of bipolar transistor, specifically a kind of plane bipolar transistor with the ring of floating, belongs to power electronics integrated technology field.
Background technology
Along with the development of electronic technology, the application of power electronic technology is more and more extensive.Due to the complexity of power electronic equipment, make the universal of it and promote to exist certain obstacle.Power electronics is integrated can be arranged complicated power electronic element by integrated mode, greatly simplified the complexity of electronic component, therefore International Power electronics educational circles generally believes, power electronics integrated technology is the most promising outlet that solves the obstacle that Development of Power Electronic Technology faces.In power electronics integrated component, planar power electronic devices is due to high pressure resistant and be easy to integrated characteristic and have huge application potential at power electronics integration field.Lateral bipolar transistor npn npn (LBJT) is that to take NPN or the PNP that the PN junction of two reverse link forms be basic structure, obtains the power electronic device of its switch special efficacy by basis set current drives.Lateral bipolar transistor npn npn (LBJT) can obtain higher current density under lower bias voltage, have stable high-temperature performance, compare with insulated gate bipolar transistor (IGBT), owing to thering is insulated gate transistor (MOS) structure in IGBT, problem oxidizable, poor stability that MOS structure exists, so lateral bipolar transistor npn npn (LBJT) has better non-oxidizability and stability.
No matter be LBJT or IGBT, for the work that guarantees that it is stable in circuit, all need to have good reactance voltage breakdown performance.As disclosed a kind of Si-BJT device for power integrated circuit and preparation method thereof in Chinese patent literature CN102610638A, comprise SiC substrate from bottom to top, p-type resilient coating, N-shaped collector region, p-type base, N-shaped emitter region, passivation layer, p-type ohmic contact is positioned at the both sides of p-type base, N-shaped ohmic contact is positioned at both sides, N-shaped emitter region, emitter is positioned on N-shaped emitter region, base stage is positioned in p-type ohmic contact, collector electrode is positioned on N-shaped ohmic contact regions, in collector region and interface, base, be provided with the guard ring that length is 0.2-0.6um, at basis set electrode, place is provided with field plate.In this technical scheme, between base and collector region, increased guard ring structure, improved the blocking voltage between base stage and collector electrode, therefore can significantly improve the puncture voltage of device.Although slowed down space electric field by described guard ring, on the border of base stage and collector electrode, assemble,, easily cause the edge of collector electrode ohmic contact regions to there is too high electric field strength, so just restricted the raising of the blocking voltage of bipolarity triode.
Summary of the invention
Technical problem to be solved by this invention is that in prior art, LBJT produces too high electric field strength at the edge of collector electrode ohmic contact regions, suppress the technical problem that blocking voltage improves, thereby provide a kind of, can bear the bipolar transistor that having of higher blocking voltage floated and encircled.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of double pole triode with the ring structure of floating, comprise substrate from bottom to top, buffering area, collector region, base and emitter region, boundary in described base and collector region has been formed separately ohmic contact regions, emitter is positioned on described emitter region, collector electrode is positioned on the ohmic contact regions of described collector region, base stage is positioned on the ohmic contact regions of described base, ohmic contact regions in described collector region is formed with a plurality of rings of floating around, the described ring of floating is positioned at surface, described collector region, and near described ohmic contact regions.
The described ring of floating arranges 1-100.
The described ring of floating arranges 40.
The described ring of floating around evenly arranges in the ohmic contact regions of described collector region.
The described ring of floating is 0.1um-10um with the distance of the ohmic contact regions of described collector region.
The floating dummy section of annular that the described ring of floating forms by Implantation annealing for the drift region in described collector region.
Described ion is boron ion, aluminium ion.
Boundary in described base and described collector region is also provided with the ring of floating.
Described substrate is P
+silicon carbide substrates, described buffering area is P type silicon carbide epitaxial layers.
Described double pole triode is PNP or NPN type lateral bipolar type triode.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) double pole triode with the ring structure of floating of the present invention, comprise substrate, buffering area, collector region, base and emitter region, boundary in described base and collector region has been formed separately ohmic contact regions, emitter is positioned on described emitter region, collector electrode is positioned on the ohmic contact regions of described collector region, base stage is positioned on the ohmic contact regions of described base, ohmic contact regions in described collector region is formed with a plurality of rings of floating around, the described ring of floating is positioned at surface, described collector region, and near described ohmic contact regions.In the space charge that the described ring of floating exists self and drift region, described collector region, space charge goes to join together, increased the area of drift region space charge, due to described float ring be positioned at collector region surface and in described ohmic contact regions around, so greatly slowed down the gathering of space electric field at the ohmic contact area edge of described collector region, make the electric field sharply rising in the drift region of bipolar transistor become mild, thereby make identical drift region length can bear higher blocking voltage, puncture voltage is the highest can be promoted more than 40%.Such scheme has effectively avoided LBJT in prior art to produce too high electric field strength at the edge of collector electrode ohmic contact regions, suppresses the technical problem that blocking voltage improves, and is a kind ofly can bear the float bipolar transistor of ring of having of higher blocking voltage.
(2) double pole triode with the ring structure of floating of the present invention, the described ring of floating can arrange 1-100, preferably 20 or 40, evenly be arranged on around the ohmic contact regions of described collector region, the edge of effectively alleviating collector electrode ohmic contact regions produces too high electric field strength, and the edge that has further guaranteed ohmic contact regions, described collector region is the uniformity of voltage around, when improving described blocking voltage, guarantees its stability.
(3) double pole triode with the ring structure of floating of the present invention, the described ring of floating is 0.1um-10um with the distance of the ohmic contact regions of described collector region, preferred 0.5um, the ohmic contact regions distance of encircling from collector region of floating herein determines according to collector width and doping content.The ring of floating described in arranging in this distance range, the electric field that can better slow down the ohmic contact regions edge of described collector region strengthens, and the electric field sharply rising in described marginal zone is become gently, has improved blocking voltage, puncture voltage can improve 40%, has good effect.
(4) double pole triode with the ring structure of floating of the present invention, the floating dummy section of annular that the described ring of floating forms by Implantation annealing for the drift region in described collector region, described ion is boron ion, aluminium ion, the technique of ring of floating described in herein forming is simple, with respect to other, improve the technology of carborundum LBJT blocking voltage grade, minimizing on-state loss, more can be cost-saving, with relatively low cost, obtained better service behaviour.
(5) double pole triode with the ring structure of floating of the present invention, described substrate is P
+silicon carbide substrates, described buffering area is P type silicon carbide epitaxial layers, described double pole triode is PNP or NPN type, can select as required, has good practicality.
Accompanying drawing explanation
For content of the present invention is more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is the double pole triode structural representation with the ring structure of floating of the present invention;
In figure, Reference numeral is expressed as: 2-substrate, 3-resilient coating, 4-collector region, 5-ohmic contact regions, 6-base, 7-ohmic contact regions, 8-collector electrode, the 9-ring of floating, 10-emitter region, 11-base stage, 12-emitter.
Embodiment
Embodiment 1:
The structure of the double pole triode with the ring structure of floating of the present invention as shown in Figure 1, double pole triode is herein the lateral bipolar type triode (LBJT) of NPN type, it comprises substrate 2, buffering area 3, collector region 4, base 6 and emitter region 10 from bottom to top, boundary in described base 6 and collector region 4 has been formed separately ohmic contact regions 7,5, emitter 12 is positioned on described emitter region 10, collector electrode 8 is positioned on the ohmic contact regions 5 of described collector region 4, base stage 11 is positioned on the ohmic contact regions 7 of described base 6.In the present embodiment, described substrate 2 is P
+silicon carbide substrates, resilient coating 3 to last layer is silicon carbide epitaxial layers, again to the collector region 4 of last layer, by Implantation in interior formation ohmic contact regions, described collector region 45, drift region in collector region forms the ring of floating (Floating Rings) 9 by Implantation, the base 6 that is device to last layer again and ohmic contact regions 7, topmost one deck is emitter region 10.Described base, emitter region and collector region form the structure in Fig. 1 through extension repeatedly and Implantation, outside each, delay also need supporting with corresponding Implantation and high annealing.In the present embodiment, described in, the ring 9 of floating evenly arranges 20 around in the ohmic contact regions 5 of stating collector region 4, setting position herein and number is set selects as required.The described ring 9 of floating is positioned at the surface of described collector region 4, and near described ohmic contact regions 5.Like this, when the electric field strength of the ohmic contact area edge of described collector region raises, in the space charge that the structure self of ring of floating exists and drift region, join together in space charge region, increased the area of the space charge region of drift region, simultaneously because the ring of floating is positioned at the surface of described collector region and in described ohmic contact regions around, greatly slowed down space then and there on surface especially in the gathering of ohmic contact area edge, make drift region become mild at the electric field of ohmic contact area edge, thereby make described ohmic contact regions can bear higher blocking voltage, improved the anti-breakdown performance of described LBJT, puncture voltage is the highest can be improved more than 40%.
Embodiment 2:
On the basis of embodiment 1, described in the ring of floating can arrange 1 or 10 or 40 or 50 or 100, generally between 1-100, select as required.In the present embodiment, described in float ring number be 40, number is herein according to the material of described double pole triode and size setting.For the mild effect of ring to the electric field of the ohmic contact regions of described collector region of floating described in guaranteeing, the described ring of floating is 0.5um with the distance that arranges of the ohmic contact regions of described collector region, the described ring of floating is the floating dummy section of annular forming by Implantation annealing by the drift region in described collector region, ion herein can be selected boron ion, aluminium ion, and what in the present embodiment, select is boron ion.In order to improve the breakdown characteristics on whole surface, described collector region, a plurality of rings of floating can also be set on surface, described collector region, the boundary in described base and described collector region also arranges the ring of floating.
The execution mode that can convert as other, the described ring of floating can be selected 0.1um or 1um or 4um or 10um with the distance of the ohmic contact regions of described collector region, double pole triode for normal size, described distance is generally selected between 0.1-10um, the distance of encircling from ohmic contact regions, described collector region of floating herein determines according to collector width and doping content, for large-sized double pole triode, its distance also can surpass 1um.
In addition, the double pole triode with the ring structure of floating of the present invention, except carborundum, can also select the semi-conducting materials such as silicon (Si), gallium nitride (GaN), and this structure is equally applicable to the double pole triode of positive-negative-positive structure.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without also giving all execution modes.And the apparent variation of being extended out thus or change are still among the protection range in the invention.
Claims (10)
1. a double pole triode with the ring structure of floating, comprise substrate, buffering area, collector region, base and emitter region from bottom to top, boundary in described base and collector region has been formed separately ohmic contact regions, emitter is positioned on described emitter region, collector electrode is positioned on the ohmic contact regions of described collector region, base stage is positioned on the ohmic contact regions of described base, it is characterized in that: the ohmic contact regions in described collector region is formed with a plurality of rings of floating around, the described ring of floating is positioned at surface, described collector region, and near described ohmic contact regions.
2. the double pole triode with the ring structure of floating according to claim 1, is characterized in that: described in the ring of floating arrange 1-100.
3. the double pole triode with the ring structure of floating according to claim 2, is characterized in that: described in the ring of floating arrange 40.
4. according to the double pole triode with the ring structure of floating described in claim 1 or 2 or 3, it is characterized in that: described in the ring of floating in the ohmic contact regions of described collector region, around evenly arrange.
5. according to the double pole triode with the ring structure of floating described in any one in claim 1-4, it is characterized in that: described in the ring of floating be 0.1um-10um with the distance of the ohmic contact regions of described collector region.
6. according to the double pole triode with the ring structure of floating described in any one in claim 1-5, it is characterized in that: described in the annular floating dummy section of ring for forming by Implantation annealing in the drift region of described collector region of floating.
7. the double pole triode with the ring structure of floating according to claim 6, is characterized in that: described ion is boron ion, aluminium ion.
8. according to the double pole triode with the ring structure of floating described in any one in claim 1-7, it is characterized in that: the boundary in described base and described collector region is also provided with the ring of floating.
9. according to the double pole triode of the ring structure of floating described in any one in claim 1-8, it is characterized in that: described substrate is P
+silicon carbide substrates, described buffering area is P type silicon carbide epitaxial layers.
10. according to the double pole triode of the ring structure of floating described in any one in claim 1-9, it is characterized in that: described double pole triode is PNP or NPN type lateral bipolar type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210330637.8A CN103681816A (en) | 2012-09-09 | 2012-09-09 | Bipolar transistor with floating ring structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210330637.8A CN103681816A (en) | 2012-09-09 | 2012-09-09 | Bipolar transistor with floating ring structure |
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| CN103681816A true CN103681816A (en) | 2014-03-26 |
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| CN201210330637.8A Pending CN103681816A (en) | 2012-09-09 | 2012-09-09 | Bipolar transistor with floating ring structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514153A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Silicon carbide semiconductor |
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| CN1461497A (en) * | 2000-12-11 | 2003-12-10 | 克里公司 | Method of fabricating bipolar junction transistor in silicon carbide and resulting devices |
| JP2005032897A (en) * | 2003-07-10 | 2005-02-03 | Hitachi Cable Ltd | Heterojunction bipolar transistor |
| CN1630100A (en) * | 2003-12-19 | 2005-06-22 | 三洋电机株式会社 | Semiconductor device |
| JP2008532897A (en) * | 2005-03-10 | 2008-08-21 | ワッカー ポリマー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディトゲゼルシャフト | Non-defamable cementitious mortar composition |
| CN101345255A (en) * | 2007-07-10 | 2009-01-14 | 三菱电机株式会社 | Power semiconductor device and manufacturing method therefor |
| US20100078755A1 (en) * | 2008-09-30 | 2010-04-01 | John Victor Veliadis | Semiconductor structure with an electric field stop layer for improved edge termination capability |
| CN102610638A (en) * | 2012-03-22 | 2012-07-25 | 西安电子科技大学 | SiC-bipolar junction transistor (SiC-BJT) device for power integrated circuit and manufacturing method of SiC-BJT device |
-
2012
- 2012-09-09 CN CN201210330637.8A patent/CN103681816A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1461497A (en) * | 2000-12-11 | 2003-12-10 | 克里公司 | Method of fabricating bipolar junction transistor in silicon carbide and resulting devices |
| JP2005032897A (en) * | 2003-07-10 | 2005-02-03 | Hitachi Cable Ltd | Heterojunction bipolar transistor |
| CN1630100A (en) * | 2003-12-19 | 2005-06-22 | 三洋电机株式会社 | Semiconductor device |
| JP2008532897A (en) * | 2005-03-10 | 2008-08-21 | ワッカー ポリマー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディトゲゼルシャフト | Non-defamable cementitious mortar composition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105514153A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Silicon carbide semiconductor |
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Application publication date: 20140326 |