CA2425541C - Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices - Google Patents
Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Download PDFInfo
- Publication number
- CA2425541C CA2425541C CA2425541A CA2425541A CA2425541C CA 2425541 C CA2425541 C CA 2425541C CA 2425541 A CA2425541 A CA 2425541A CA 2425541 A CA2425541 A CA 2425541A CA 2425541 C CA2425541 C CA 2425541C
- Authority
- CA
- Canada
- Prior art keywords
- layer
- conductivity type
- silicon carbide
- side walls
- pillar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 89
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 125000006850 spacer group Chemical group 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- -1 wide bandgap Chemical compound 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2000/033627 WO2002049115A1 (en) | 2000-12-11 | 2000-12-11 | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2425541A1 CA2425541A1 (en) | 2002-06-20 |
| CA2425541C true CA2425541C (en) | 2014-08-05 |
Family
ID=21742063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2425541A Expired - Lifetime CA2425541C (en) | 2000-12-11 | 2000-12-11 | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1342271B1 (https=) |
| JP (1) | JP5178988B2 (https=) |
| KR (1) | KR100718937B1 (https=) |
| CN (1) | CN1227742C (https=) |
| AU (1) | AU2001224295A1 (https=) |
| CA (1) | CA2425541C (https=) |
| WO (1) | WO2002049115A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4777699B2 (ja) * | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
| US7304334B2 (en) * | 2005-09-16 | 2007-12-04 | Cree, Inc. | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
| US7345310B2 (en) * | 2005-12-22 | 2008-03-18 | Cree, Inc. | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
| JP4046140B1 (ja) * | 2006-11-29 | 2008-02-13 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| CN103681816A (zh) * | 2012-09-09 | 2014-03-26 | 苏州英能电子科技有限公司 | 一种具有浮置环结构的双极型晶体管 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202962A (ja) * | 1987-02-18 | 1988-08-22 | Fujitsu Ltd | バイポ−ラトランジスタおよび製造方法 |
| US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
| DE3802755A1 (de) | 1988-01-30 | 1989-08-10 | Kernforschungsanlage Juelich | Verfahren zur einlagerung von radioaktiven abfallstoffen |
| GB8926414D0 (en) * | 1989-11-18 | 1990-01-10 | Lsi Logic Europ | Bipolar junction transistors |
| JPH0548083A (ja) * | 1991-08-09 | 1993-02-26 | Toshiba Corp | 電力用半導体素子 |
| JPH05335497A (ja) * | 1992-06-01 | 1993-12-17 | Nippon Steel Corp | 半導体装置の製造方法 |
| DE4301333C2 (de) * | 1993-01-20 | 2003-05-15 | Daimler Chrysler Ag | Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren |
| JP3152046B2 (ja) * | 1994-01-10 | 2001-04-03 | 富士電機株式会社 | バイポーラトランジスタおよびその製造方法 |
| JPH0878431A (ja) * | 1994-09-05 | 1996-03-22 | Fuji Electric Co Ltd | 炭化けい素たて型バイポーラトランジスタおよびその製造方法 |
| JPH08288500A (ja) * | 1995-04-20 | 1996-11-01 | Hitachi Ltd | 炭化珪素半導体素子とその製造法及び用途 |
| KR0171000B1 (ko) * | 1995-12-15 | 1999-02-01 | 양승택 | 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법 |
| SE516338C2 (sv) * | 1999-05-31 | 2001-12-17 | Ericsson Telefon Ab L M | RF-effekttransistor med kollektor upp |
-
2000
- 2000-12-11 JP JP2002550320A patent/JP5178988B2/ja not_active Expired - Lifetime
- 2000-12-11 KR KR1020037005346A patent/KR100718937B1/ko not_active Expired - Lifetime
- 2000-12-11 CA CA2425541A patent/CA2425541C/en not_active Expired - Lifetime
- 2000-12-11 WO PCT/US2000/033627 patent/WO2002049115A1/en not_active Ceased
- 2000-12-11 AU AU2001224295A patent/AU2001224295A1/en not_active Abandoned
- 2000-12-11 EP EP00988041.0A patent/EP1342271B1/en not_active Expired - Lifetime
- 2000-12-11 CN CNB008200653A patent/CN1227742C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1342271A1 (en) | 2003-09-10 |
| JP5178988B2 (ja) | 2013-04-10 |
| WO2002049115A1 (en) | 2002-06-20 |
| KR20030061377A (ko) | 2003-07-18 |
| AU2001224295A1 (en) | 2002-06-24 |
| EP1342271B1 (en) | 2013-11-20 |
| KR100718937B1 (ko) | 2007-05-16 |
| CA2425541A1 (en) | 2002-06-20 |
| JP2004516655A (ja) | 2004-06-03 |
| CN1227742C (zh) | 2005-11-16 |
| CN1461497A (zh) | 2003-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKEX | Expiry |
Effective date: 20201211 |