KR100698444B1 - 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 - Google Patents
화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 Download PDFInfo
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- KR100698444B1 KR100698444B1 KR1020030017699A KR20030017699A KR100698444B1 KR 100698444 B1 KR100698444 B1 KR 100698444B1 KR 1020030017699 A KR1020030017699 A KR 1020030017699A KR 20030017699 A KR20030017699 A KR 20030017699A KR 100698444 B1 KR100698444 B1 KR 100698444B1
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- 239000002253 acid Substances 0.000 claims description 160
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- WKNAHMALXKCFQB-UHFFFAOYSA-N tert-butyl [4-[[4-[(2-methylpropan-2-yl)oxycarbonyloxy]phenyl]methyl]phenyl] carbonate Chemical compound C1=CC(OC(=O)OC(C)(C)C)=CC=C1CC1=CC=C(OC(=O)OC(C)(C)C)C=C1 WKNAHMALXKCFQB-UHFFFAOYSA-N 0.000 description 1
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- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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- YNIMTIPTLNZOMC-UHFFFAOYSA-N tris[4-(dimethylamino)phenyl]sulfanium Chemical compound C1=CC(N(C)C)=CC=C1[S+](C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 YNIMTIPTLNZOMC-UHFFFAOYSA-N 0.000 description 1
- PNXQORBBJALXKA-UHFFFAOYSA-N tris[4-[(2-methylpropan-2-yl)oxy]phenyl]sulfanium Chemical compound C1=CC(OC(C)(C)C)=CC=C1[S+](C=1C=CC(OC(C)(C)C)=CC=1)C1=CC=C(OC(C)(C)C)C=C1 PNXQORBBJALXKA-UHFFFAOYSA-N 0.000 description 1
- JXPBRQHHMIKAPW-UHFFFAOYSA-N tris[4-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethoxy]phenyl]sulfanium Chemical compound C1=CC(OCC(=O)OC(C)(C)C)=CC=C1[S+](C=1C=CC(OCC(=O)OC(C)(C)C)=CC=1)C1=CC=C(OCC(=O)OC(C)(C)C)C=C1 JXPBRQHHMIKAPW-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/75—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/26—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D333/30—Hetero atoms other than halogen
- C07D333/36—Nitrogen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002080649 | 2002-03-22 | ||
| JPJP-P-2002-00080649 | 2002-03-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040002467A KR20040002467A (ko) | 2004-01-07 |
| KR100698444B1 true KR100698444B1 (ko) | 2007-03-23 |
Family
ID=29416585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030017699A Expired - Lifetime KR100698444B1 (ko) | 2002-03-22 | 2003-03-21 | 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6916591B2 (https=) |
| KR (1) | KR100698444B1 (https=) |
| TW (1) | TW200403523A (https=) |
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| JP4639062B2 (ja) * | 2003-11-21 | 2011-02-23 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP4671035B2 (ja) * | 2005-10-14 | 2011-04-13 | 信越化学工業株式会社 | 化学増幅型レジスト材料及びパターン形成方法 |
| JP4716016B2 (ja) * | 2005-12-27 | 2011-07-06 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
| US7932334B2 (en) * | 2005-12-27 | 2011-04-26 | Sumitomo Chemical Company, Limited | Resin suitable for an acid generator |
| JP4539865B2 (ja) * | 2006-01-06 | 2010-09-08 | 信越化学工業株式会社 | ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
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| JP4682057B2 (ja) * | 2006-02-20 | 2011-05-11 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
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| KR101265352B1 (ko) * | 2006-07-06 | 2013-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 에스테르 화합물과 그의 제조 방법, 고분자 화합물,레지스트 재료, 및 패턴 형성 방법 |
| TWI399616B (zh) * | 2006-07-06 | 2013-06-21 | Shinetsu Chemical Co | 正型光阻組成物及圖型之形成方法 |
| TWI397771B (zh) * | 2006-07-06 | 2013-06-01 | Shinetsu Chemical Co | 正型光阻組成物及圖型之形成方法 |
| KR101145545B1 (ko) * | 2006-07-06 | 2012-05-15 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 패턴 형성 방법 |
| KR101116963B1 (ko) * | 2006-10-04 | 2012-03-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법 |
| JP2008088343A (ja) * | 2006-10-04 | 2008-04-17 | Shin Etsu Chem Co Ltd | 高分子化合物、レジスト材料、及びパターン形成方法 |
| KR101242332B1 (ko) * | 2006-10-17 | 2013-03-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 이것을 이용한 패턴 형성 방법 |
| JP2008129389A (ja) * | 2006-11-22 | 2008-06-05 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料及びパターン形成方法 |
| JP4910662B2 (ja) * | 2006-11-29 | 2012-04-04 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4314494B2 (ja) * | 2006-11-29 | 2009-08-19 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4314496B2 (ja) * | 2007-01-09 | 2009-08-19 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4435196B2 (ja) * | 2007-03-29 | 2010-03-17 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| US20080268839A1 (en) * | 2007-04-27 | 2008-10-30 | Ayers John I | Reducing a number of registration termination massages in a network for cellular devices |
| JPWO2008143301A1 (ja) * | 2007-05-23 | 2010-08-12 | Jsr株式会社 | パターン形成方法及びそれに用いる樹脂組成物 |
| JP5035560B2 (ja) * | 2007-07-04 | 2012-09-26 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| JP4475435B2 (ja) * | 2007-07-30 | 2010-06-09 | 信越化学工業株式会社 | 含フッ素単量体、含フッ素高分子化合物、レジスト材料及びパターン形成方法 |
| JP5035562B2 (ja) * | 2007-08-22 | 2012-09-26 | 信越化学工業株式会社 | パターン形成方法 |
| JP5013119B2 (ja) * | 2007-09-20 | 2012-08-29 | 信越化学工業株式会社 | パターン形成方法並びにこれに用いるレジスト材料 |
| JP4993138B2 (ja) * | 2007-09-26 | 2012-08-08 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| JP4513990B2 (ja) * | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4513989B2 (ja) | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4844761B2 (ja) * | 2008-01-18 | 2011-12-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP5131461B2 (ja) | 2008-02-14 | 2013-01-30 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
| JP5071658B2 (ja) * | 2008-02-14 | 2012-11-14 | 信越化学工業株式会社 | レジスト材料、レジスト保護膜材料、及びパターン形成方法 |
| JP4623324B2 (ja) * | 2008-03-18 | 2011-02-02 | 信越化学工業株式会社 | 水酸基を有する単量体、高分子化合物、レジスト材料及びパターン形成方法 |
| JP4650644B2 (ja) * | 2008-05-12 | 2011-03-16 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP5381298B2 (ja) * | 2008-05-12 | 2014-01-08 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
| JP4771101B2 (ja) * | 2008-09-05 | 2011-09-14 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4743451B2 (ja) * | 2008-09-05 | 2011-08-10 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4655128B2 (ja) * | 2008-09-05 | 2011-03-23 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4743450B2 (ja) * | 2008-09-05 | 2011-08-10 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| TW202325787A (zh) * | 2021-12-30 | 2023-07-01 | 美商羅門哈斯電子材料有限公司 | 光阻劑組成物及圖案形成方法 |
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| US5346806A (en) | 1991-04-20 | 1994-09-13 | Hoechst Aktiengesellschaft | Acid-cleavable radiation-sensitive compounds, radiation-sensitive mixture containing these compounds, and radiation-sensitive recording material produced with this mixture |
| US5800964A (en) | 1995-09-29 | 1998-09-01 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition |
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| US20040033440A1 (en) * | 2002-08-09 | 2004-02-19 | Kazunori Maeda | Photoacid generators, chemically amplified positive resist compositions, and patterning process |
-
2003
- 2003-03-21 US US10/393,006 patent/US6916591B2/en not_active Expired - Lifetime
- 2003-03-21 TW TW092106569A patent/TW200403523A/zh not_active IP Right Cessation
- 2003-03-21 KR KR1020030017699A patent/KR100698444B1/ko not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5346806A (en) | 1991-04-20 | 1994-09-13 | Hoechst Aktiengesellschaft | Acid-cleavable radiation-sensitive compounds, radiation-sensitive mixture containing these compounds, and radiation-sensitive recording material produced with this mixture |
| US5800964A (en) | 1995-09-29 | 1998-09-01 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition |
| US6245930B1 (en) | 1996-07-24 | 2001-06-12 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization resist composition |
| KR20010060090A (ko) * | 1999-12-31 | 2001-07-06 | 김충섭 | 반응성 광산발생제와 이를 포함하는 폴리아미드 감광성내열절연체 조성물 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200403523A (en) | 2004-03-01 |
| TWI317047B (https=) | 2009-11-11 |
| US6916591B2 (en) | 2005-07-12 |
| US20030215738A1 (en) | 2003-11-20 |
| KR20040002467A (ko) | 2004-01-07 |
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