KR100690413B1 - 질화물 반도체 성장용 기판 - Google Patents

질화물 반도체 성장용 기판 Download PDF

Info

Publication number
KR100690413B1
KR100690413B1 KR1020057007350A KR20057007350A KR100690413B1 KR 100690413 B1 KR100690413 B1 KR 100690413B1 KR 1020057007350 A KR1020057007350 A KR 1020057007350A KR 20057007350 A KR20057007350 A KR 20057007350A KR 100690413 B1 KR100690413 B1 KR 100690413B1
Authority
KR
South Korea
Prior art keywords
layer
nitride semiconductor
substrate
growth
sapphire substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020057007350A
Other languages
English (en)
Korean (ko)
Other versions
KR20050062640A (ko
Inventor
카즈히데 쿠마쿠라
마사노부 히로키
토시키 마키모토
Original Assignee
니폰덴신뎅와 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰덴신뎅와 가부시키가이샤 filed Critical 니폰덴신뎅와 가부시키가이샤
Publication of KR20050062640A publication Critical patent/KR20050062640A/ko
Application granted granted Critical
Publication of KR100690413B1 publication Critical patent/KR100690413B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12556—Organic component
    • Y10T428/12569—Synthetic resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12625—Free carbon containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020057007350A 2003-08-12 2004-08-11 질화물 반도체 성장용 기판 Expired - Lifetime KR100690413B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003292350 2003-08-12
JPJP-P-2003-00292350 2003-08-12

Publications (2)

Publication Number Publication Date
KR20050062640A KR20050062640A (ko) 2005-06-23
KR100690413B1 true KR100690413B1 (ko) 2007-03-12

Family

ID=34131715

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057007350A Expired - Lifetime KR100690413B1 (ko) 2003-08-12 2004-08-11 질화물 반도체 성장용 기판

Country Status (7)

Country Link
US (1) US7244520B2 (enExample)
EP (1) EP1655766B1 (enExample)
JP (1) JP4249184B2 (enExample)
KR (1) KR100690413B1 (enExample)
CN (1) CN100389481C (enExample)
TW (1) TW200518197A (enExample)
WO (1) WO2005015618A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP2007165478A (ja) * 2005-12-12 2007-06-28 National Univ Corp Shizuoka Univ 光電面及び光検出器
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008088838A1 (en) * 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
JP2008214132A (ja) * 2007-03-05 2008-09-18 Univ Of Tokushima Ｉｉｉ族窒化物半導体薄膜、ｉｉｉ族窒化物半導体発光素子およびｉｉｉ族窒化物半導体薄膜の製造方法
JP2009274945A (ja) * 2008-04-17 2009-11-26 Sumitomo Electric Ind Ltd ＡｌＮ結晶の成長方法およびＡｌＮ積層体
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP4933513B2 (ja) * 2008-10-14 2012-05-16 日本電信電話株式会社 窒化物半導体成長用基板
WO2011058968A1 (ja) * 2009-11-10 2011-05-19 株式会社トクヤマ 積層体の製造方法
JP5399552B2 (ja) * 2010-03-01 2014-01-29 シャープ株式会社 窒化物半導体素子の製造方法、窒化物半導体発光素子および発光装置
DE112011101969B4 (de) * 2010-06-11 2018-05-09 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen derselben
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8574728B2 (en) 2011-03-15 2013-11-05 Kennametal Inc. Aluminum oxynitride coated article and method of making the same
US8980002B2 (en) * 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
US8778783B2 (en) 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
US8853086B2 (en) 2011-05-20 2014-10-07 Applied Materials, Inc. Methods for pretreatment of group III-nitride depositions
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8633094B2 (en) * 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
EP2822026B1 (en) * 2012-02-29 2018-03-14 Kyocera Corporation Composite substrate
DE102012103686B4 (de) * 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat
US9718249B2 (en) 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
US9138864B2 (en) 2013-01-25 2015-09-22 Kennametal Inc. Green colored refractory coatings for cutting tools
US9017809B2 (en) 2013-01-25 2015-04-28 Kennametal Inc. Coatings for cutting tools
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
EP2778252A3 (en) * 2013-03-15 2014-12-10 Apple Inc. Layered Coatings For Sapphire Structure
DE102013004558B4 (de) * 2013-03-18 2018-04-05 Apple Inc. Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung
US9427808B2 (en) 2013-08-30 2016-08-30 Kennametal Inc. Refractory coatings for cutting tools
JP2015168594A (ja) * 2014-03-06 2015-09-28 日本電信電話株式会社 窒化物半導体の成長方法
JP6271390B2 (ja) * 2014-10-17 2018-01-31 日本電信電話株式会社 窒化物半導体結晶成長方法
US10141184B2 (en) 2015-02-18 2018-11-27 Tohoku University Method of producing self-supporting nitride semiconductor substrate
CN105336579B (zh) * 2015-09-29 2018-07-10 安徽三安光电有限公司 一种半导体元件及其制备方法
CN106025026B (zh) * 2016-07-15 2018-06-19 厦门乾照光电股份有限公司 一种用于发光二极管的AlN缓冲层及其制作方法
DE102016114250B4 (de) * 2016-08-02 2020-04-16 Forschungsverbund Berlin E.V. Verfahren zur Herstellung eines mit einem Halbleitermaterial beschichteten Saphirsubstrats, nach dem Verfahren erhältliches beschichtetes Saphirsubstrat sowie Verwendung eines solchen Substrat in einer Leuchtdiode
US20180182916A1 (en) * 2016-12-26 2018-06-28 Toyoda Gosei Co., Ltd. Group iii nitride semiconductor light-emitting device and production method therefor
US11773508B2 (en) 2017-09-11 2023-10-03 Tdk Corporation Substrate and light-emitting element
CN108682724A (zh) * 2018-06-01 2018-10-19 广东工业大学 一种led外延芯片及一种led外延芯片的制备方法
CN108565322A (zh) * 2018-06-01 2018-09-21 广东工业大学 一种led外延芯片及一种led外延芯片的制备方法
CN109065685A (zh) * 2018-08-20 2018-12-21 浙江大学 一种含有AlN三明治结构的蓝宝石复合衬底
JP7147972B2 (ja) * 2019-05-29 2022-10-05 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその作製方法
US11269374B2 (en) 2019-09-11 2022-03-08 Apple Inc. Electronic device with a cover assembly having an adhesion layer
CN113120856B (zh) * 2021-03-24 2023-10-13 西安电子科技大学 一种基于蓝宝石衬底的AlON矩形纳米阵列及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141495A (ja) * 1988-11-21 1990-05-30 Asahi Chem Ind Co Ltd 窒化アルミニウム単結晶薄膜を有する積層単結晶基板及びその製造方法
JPH1160395A (ja) * 1997-08-21 1999-03-02 Fujitsu Ltd 化合物半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3020395B2 (ja) * 1993-10-06 2000-03-15 アルプス電気株式会社 光学素子
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
JPH11340147A (ja) 1998-05-25 1999-12-10 Matsushita Electron Corp 窒化物半導体ウエハーの製造方法および窒化物半導体素子の製造方法
JP2001196697A (ja) * 2000-01-13 2001-07-19 Fuji Photo Film Co Ltd 半導体素子用基板およびその製造方法およびその半導体素子用基板を用いた半導体素子
US6451711B1 (en) 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6744076B2 (en) * 2002-03-14 2004-06-01 The Circle For The Promotion Of Science And Engineering Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141495A (ja) * 1988-11-21 1990-05-30 Asahi Chem Ind Co Ltd 窒化アルミニウム単結晶薄膜を有する積層単結晶基板及びその製造方法
JPH1160395A (ja) * 1997-08-21 1999-03-02 Fujitsu Ltd 化合物半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
02141495 *
11060395

Also Published As

Publication number Publication date
WO2005015618A1 (ja) 2005-02-17
EP1655766B1 (en) 2014-04-30
TWI305660B (enExample) 2009-01-21
CN100389481C (zh) 2008-05-21
JPWO2005015618A1 (ja) 2006-10-05
KR20050062640A (ko) 2005-06-23
EP1655766A1 (en) 2006-05-10
EP1655766A4 (en) 2009-10-21
JP4249184B2 (ja) 2009-04-02
TW200518197A (en) 2005-06-01
CN1706030A (zh) 2005-12-07
US7244520B2 (en) 2007-07-17
US20060051554A1 (en) 2006-03-09

Similar Documents

Publication Publication Date Title
KR100690413B1 (ko) 질화물 반도체 성장용 기판
JP5117588B2 (ja) 窒化物半導体結晶層の製造方法
JP5117609B1 (ja) 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
WO2009084238A1 (ja) 半導体基板、半導体基板の製造方法および電子デバイス
WO2009084241A1 (ja) 半導体基板、半導体基板の製造方法および電子デバイス
JP4468744B2 (ja) 窒化物半導体薄膜の作製方法
JP2018056591A (ja) 窒化物半導体装置および窒化物半導体基板
CN108231556B (zh) Iii-v族氮化物半导体外延片的制造方法
WO2012137309A1 (ja) 窒化物電子デバイスを作製する方法
EP2832900B1 (en) Laminated substate of silicon single crystal and group iii nitride single crystal with off angle
JP4051311B2 (ja) 窒化物系半導体の結晶成長方法
JP2003178976A (ja) 半導体装置およびその製造方法
JP7120334B2 (ja) 半導体装置および半導体装置の製造方法
JP5614057B2 (ja) 窒化物電子デバイスを作製する方法
JP2011199268A (ja) 半導体基板、半導体デバイスおよび半導体基板の製造方法
JP2013084913A (ja) 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
TWI728498B (zh) 氮化物半導體基板
JP2007258258A (ja) 窒化物半導体素子ならびにその構造および作製方法
JP2000294880A (ja) Ｉｉｉ族窒化物半導体薄膜およびその製造方法
JPH0529653A (ja) 半導体素子
TW202406142A (zh) 氮化物半導體晶圓、及其製造方法

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20121227

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140121

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20141224

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20151019

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170217

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20200213

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 18

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20240812

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000