JPWO2005015618A1 - 窒化物半導体成長用基板 - Google Patents
窒化物半導体成長用基板 Download PDFInfo
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Abstract
Description
また、バッファー層を低温で堆積しても、低温バッファー層は非晶質であり、昇温時に固相成長する。そのため、バッファー層と基板との格子不整合は依然として存在しており、転移の発生を有効に抑制することは困難で、貫通転位が通常109〜1010cm−2存在する。この転位は、作製したデバイスの特性を劣化させることが良く知られている。例えば、レーザーの短寿命化や、デバイスのリーク電流の増大・低耐圧化などである。また、転位の存在によって、不純物の拡散あるいは偏析が促進されることもある。したがって、窒化物半導体層中の転位密度を減少させることは、デバイス特性の向上や、転位の影響によりこれまで達成できなかったデバイスの実現、結晶構造作製の制御性を高める上で、非常に重要である。
[図2]本発明の一実施形態に係る窒化物半導体成長用基板上にGaN層を結晶成長させた構造の断面模式図である。
[図3]本発明の一実施形態に係る窒化物半導体成長用基板の断面模式図である。
[図4]本発明の一実施形態に係る窒化物半導体成長用基板の断面模式図である。
[図5]サファイア基板上に窒化物半導体を形成するプロセスに要する時間と成長炉の温度との関係を説明するための図である。
[図6]本発明の一実施形態に係る窒化物半導体成長用基板上に結晶成長させたAl1 −xGaxN(0≦x<1)/GaNヘテロ接合バイポーラトランジスタ構造の断面模式図である。
実施の形態
サファイア、Al2O3:a=4.758Å、c=12.991Å
AlN:a=3.112Å、c=4.982Å
GaN:a=3.189Å、c=5.185Å
Claims (4)
- サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板に別途に設けられた、N、OおよびAlを含む層を備え、
該層は、前記サファイア基板と第1の面で接し、該第1の面におけるN、OおよびAlの組成比に対するNの割合が、前記窒化物半導体層との接する第2の面における前記組成比に対するNの割合よりも小さく、かつ前記第1の面における前記組成比に対するOの割合が、前記第2の面における前記組成比に対するOの割合よりも大きくなるように形成されていることを特徴とする窒化物半導体成長用基板。 - サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板上に別途に設けたAl2O3層と、
該Al2O3層上に設けた、AlON層とAlN層とのいずれか一方の層と
を備えることを特徴とする窒化物半導体成長用基板。 - サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板上に別途に設けたAl2O3層と、
第1の層であるAlON層と、第2の層であるAlN層とを備え、
前記第1の層と前記第2の層との順序で前記Al2O3層上に積層された構造を有することを特徴とする窒化物半導体成長用基板。 - 前記窒化物半導体成長用基板の最上層としてAl2O3からなるキャップ層を設けたことを特徴とする請求項1乃至3のいずれかに記載の窒化物半導体成長用基板。
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JP2003292350 | 2003-08-12 | ||
JP2003292350 | 2003-08-12 | ||
PCT/JP2004/011539 WO2005015618A1 (ja) | 2003-08-12 | 2004-08-11 | 窒化物半導体成長用基板 |
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JPWO2005015618A1 true JPWO2005015618A1 (ja) | 2006-10-05 |
JP4249184B2 JP4249184B2 (ja) | 2009-04-02 |
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US (1) | US7244520B2 (ja) |
EP (1) | EP1655766B1 (ja) |
JP (1) | JP4249184B2 (ja) |
KR (1) | KR100690413B1 (ja) |
CN (1) | CN100389481C (ja) |
TW (1) | TW200518197A (ja) |
WO (1) | WO2005015618A1 (ja) |
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US6451711B1 (en) | 2000-05-04 | 2002-09-17 | Osemi, Incorporated | Epitaxial wafer apparatus |
US6744076B2 (en) * | 2002-03-14 | 2004-06-01 | The Circle For The Promotion Of Science And Engineering | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
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2004
- 2004-08-11 CN CNB200480001328XA patent/CN100389481C/zh active Active
- 2004-08-11 JP JP2005513005A patent/JP4249184B2/ja active Active
- 2004-08-11 WO PCT/JP2004/011539 patent/WO2005015618A1/ja active IP Right Grant
- 2004-08-11 EP EP04771524.8A patent/EP1655766B1/en active Active
- 2004-08-11 US US10/532,782 patent/US7244520B2/en active Active
- 2004-08-11 KR KR1020057007350A patent/KR100690413B1/ko active IP Right Grant
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EP1655766A1 (en) | 2006-05-10 |
US7244520B2 (en) | 2007-07-17 |
KR20050062640A (ko) | 2005-06-23 |
TW200518197A (en) | 2005-06-01 |
WO2005015618A1 (ja) | 2005-02-17 |
EP1655766B1 (en) | 2014-04-30 |
US20060051554A1 (en) | 2006-03-09 |
KR100690413B1 (ko) | 2007-03-12 |
JP4249184B2 (ja) | 2009-04-02 |
CN1706030A (zh) | 2005-12-07 |
CN100389481C (zh) | 2008-05-21 |
TWI305660B (ja) | 2009-01-21 |
EP1655766A4 (en) | 2009-10-21 |
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