KR100627167B1 - 노광장치 및 이것을 이용한 디바이스의 제조방법 - Google Patents

노광장치 및 이것을 이용한 디바이스의 제조방법 Download PDF

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Publication number
KR100627167B1
KR100627167B1 KR1020047017241A KR20047017241A KR100627167B1 KR 100627167 B1 KR100627167 B1 KR 100627167B1 KR 1020047017241 A KR1020047017241 A KR 1020047017241A KR 20047017241 A KR20047017241 A KR 20047017241A KR 100627167 B1 KR100627167 B1 KR 100627167B1
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South Korea
Prior art keywords
optical system
mirror
light
illumination
excitation laser
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Expired - Fee Related
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KR1020047017241A
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English (en)
Korean (ko)
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KR20050003392A (ko
Inventor
히우라미츠루
츠지토시히코
Original Assignee
캐논 가부시끼가이샤
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Publication of KR100627167B1 publication Critical patent/KR100627167B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020047017241A 2002-04-26 2003-04-11 노광장치 및 이것을 이용한 디바이스의 제조방법 Expired - Fee Related KR100627167B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00127343 2002-04-26
JP2002127343 2002-04-26
JP2003073637A JP4298336B2 (ja) 2002-04-26 2003-03-18 露光装置、光源装置及びデバイス製造方法
JPJP-P-2003-00073637 2003-03-18
PCT/JP2003/004644 WO2003092056A1 (en) 2002-04-26 2003-04-11 Exposure apparatus and device fabrication method using the same

Publications (2)

Publication Number Publication Date
KR20050003392A KR20050003392A (ko) 2005-01-10
KR100627167B1 true KR100627167B1 (ko) 2006-09-25

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KR1020047017241A Expired - Fee Related KR100627167B1 (ko) 2002-04-26 2003-04-11 노광장치 및 이것을 이용한 디바이스의 제조방법

Country Status (7)

Country Link
US (1) US7274435B2 (enExample)
EP (1) EP1502291A4 (enExample)
JP (1) JP4298336B2 (enExample)
KR (1) KR100627167B1 (enExample)
CN (1) CN100375238C (enExample)
TW (1) TWI294560B (enExample)
WO (1) WO2003092056A1 (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7598509B2 (en) * 2004-11-01 2009-10-06 Cymer, Inc. Laser produced plasma EUV light source
CN100476585C (zh) 2002-12-23 2009-04-08 Asml荷兰有限公司 具有可扩展薄片的杂质屏蔽
WO2005017624A1 (en) 2003-08-13 2005-02-24 Philips Intellectual Property & Standards Gmbh Filter for retaining a substance originating from a radiation source and method for the manufacture of the same
JP2005276673A (ja) * 2004-03-25 2005-10-06 Komatsu Ltd Ｌｐｐ型ｅｕｖ光源装置
JP2005276671A (ja) * 2004-03-25 2005-10-06 Komatsu Ltd Ｌｐｐ型ｅｕｖ光源装置
JP4878108B2 (ja) 2004-07-14 2012-02-15 キヤノン株式会社 露光装置、デバイス製造方法、および測定装置
JP2006128157A (ja) * 2004-10-26 2006-05-18 Komatsu Ltd 極端紫外光源装置用ドライバレーザシステム
JP2006128342A (ja) * 2004-10-28 2006-05-18 Canon Inc 露光装置、光源装置及びデバイス製造方法
US7329884B2 (en) * 2004-11-08 2008-02-12 Nikon Corporation Exposure apparatus and exposure method
JP4366358B2 (ja) * 2004-12-29 2009-11-18 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法
US7482609B2 (en) * 2005-02-28 2009-01-27 Cymer, Inc. LPP EUV light source drive laser system
JP2006261605A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置及び露光方法
JP2006278960A (ja) * 2005-03-30 2006-10-12 Canon Inc 露光装置
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
CN100498420C (zh) * 2005-11-04 2009-06-10 中国科学院电工研究所 极紫外激光等离子体光源碎片隔离器
KR100698023B1 (ko) * 2006-06-16 2007-03-23 주식회사 고려반도체시스템 반도체 소자 레이저 쏘잉 장치의 광학계 변환장치
JP4989180B2 (ja) * 2006-10-13 2012-08-01 キヤノン株式会社 照明光学系および露光装置
JP4842084B2 (ja) * 2006-10-19 2011-12-21 株式会社小松製作所 極端紫外光源装置及びコレクタミラー
JP4842088B2 (ja) * 2006-10-24 2011-12-21 株式会社小松製作所 極端紫外光源装置及びコレクタミラー装置
US7889321B2 (en) * 2007-04-03 2011-02-15 Asml Netherlands B.V. Illumination system for illuminating a patterning device and method for manufacturing an illumination system
CN101452212B (zh) * 2007-12-06 2010-09-08 上海华虹Nec电子有限公司 投影式光刻机
EP2154574B1 (en) * 2008-08-14 2011-12-07 ASML Netherlands BV Radiation source and method of generating radiation
DE102008046699B4 (de) * 2008-09-10 2014-03-13 Carl Zeiss Smt Gmbh Abbildende Optik
JP2010087388A (ja) * 2008-10-02 2010-04-15 Ushio Inc 露光装置
WO2010043288A1 (en) * 2008-10-17 2010-04-22 Asml Netherlands B.V. Collector assembly, radiation source, lithographic appparatus and device manufacturing method
JP2013519211A (ja) 2010-02-09 2013-05-23 エナジェティック・テクノロジー・インコーポレーテッド レーザー駆動の光源
JP5841655B2 (ja) * 2010-03-18 2016-01-13 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
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US9072152B2 (en) 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a variation value formula for the intensity
US9072153B2 (en) 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a pre-pulse to create a diffused dome shaped target
JP5075951B2 (ja) * 2010-07-16 2012-11-21 ギガフォトン株式会社 極端紫外光源装置及びドライバレーザシステム
DE102010041623A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
RU2468543C1 (ru) * 2011-08-01 2012-11-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева-КАИ" (КНИТУ-КАИ) Способ организации рабочего процесса в камере лазерного ракетного двигателя и лазерный ракетный двигатель
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WO2015086232A1 (en) * 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
US9741553B2 (en) 2014-05-15 2017-08-22 Excelitas Technologies Corp. Elliptical and dual parabolic laser driven sealed beam lamps
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US10186416B2 (en) 2014-05-15 2019-01-22 Excelitas Technologies Corp. Apparatus and a method for operating a variable pressure sealed beam lamp
CN105573061B (zh) * 2014-10-16 2018-03-06 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
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US9576785B2 (en) 2015-05-14 2017-02-21 Excelitas Technologies Corp. Electrodeless single CW laser driven xenon lamp
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US10057973B2 (en) 2015-05-14 2018-08-21 Excelitas Technologies Corp. Electrodeless single low power CW laser driven plasma lamp
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US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply
DE102023210078A1 (de) 2023-10-13 2025-04-17 Carl Zeiss Smt Gmbh EUV-Spiegelsystem, mikrolithografische Projektionsbelichtungsanlage, System aus einer Vakuumkammer und einer Leiterplatte
DE102024105046A1 (de) * 2024-02-22 2025-08-28 TRUMPF Lasersystems for Semiconductor Manufacturing SE Vorrichtung zum Fokussieren von Laserstrahlung und Lithographiesystem

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1067121A (zh) * 1991-05-18 1992-12-16 北京师范大学 X射线聚束光刻法及其装置
US6566668B2 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
JPH1195140A (ja) * 1997-09-22 1999-04-09 Toshiba Corp マルチビーム露光装置
WO1999051357A1 (en) * 1998-04-03 1999-10-14 Advanced Energy Systems, Inc. Energy emission system for photolithography
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
US6285743B1 (en) * 1998-09-14 2001-09-04 Nikon Corporation Method and apparatus for soft X-ray generation
JP2000089000A (ja) * 1998-09-14 2000-03-31 Nikon Corp Ｘ線発生装置
JP2000100685A (ja) 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
US6031598A (en) * 1998-09-25 2000-02-29 Euv Llc Extreme ultraviolet lithography machine
US6339634B1 (en) * 1998-10-01 2002-01-15 Nikon Corporation Soft x-ray light source device
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP2001023190A (ja) * 1999-07-07 2001-01-26 Sony Corp 露光装置、露光方法、光ディスク装置、及び記録及び／又は再生方法
JP2001110709A (ja) * 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
FR2802311B1 (fr) * 1999-12-08 2002-01-18 Commissariat Energie Atomique Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
JP2001332489A (ja) * 2000-03-13 2001-11-30 Nikon Corp 照明光学系、投影露光装置、及びデバイス製造方法
JP4505664B2 (ja) * 2000-03-24 2010-07-21 株式会社ニコン Ｘ線発生装置
US6633048B2 (en) * 2001-05-03 2003-10-14 Northrop Grumman Corporation High output extreme ultraviolet source
JP4995379B2 (ja) 2001-06-18 2012-08-08 ギガフォトン株式会社 光源装置及びそれを用いた露光装置

Also Published As

Publication number Publication date
US7274435B2 (en) 2007-09-25
JP2004006716A (ja) 2004-01-08
US20050225739A1 (en) 2005-10-13
EP1502291A4 (en) 2009-10-28
CN1647249A (zh) 2005-07-27
JP4298336B2 (ja) 2009-07-15
WO2003092056A1 (en) 2003-11-06
EP1502291A1 (en) 2005-02-02
KR20050003392A (ko) 2005-01-10
TWI294560B (en) 2008-03-11
CN100375238C (zh) 2008-03-12
TW200307183A (en) 2003-12-01

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