KR100613842B1 - 절연체 구조 상에 실질적으로 언더컷이 없는 실리콘을만들기 위한 식각 방법 - Google Patents

절연체 구조 상에 실질적으로 언더컷이 없는 실리콘을만들기 위한 식각 방법 Download PDF

Info

Publication number
KR100613842B1
KR100613842B1 KR1020007013923A KR20007013923A KR100613842B1 KR 100613842 B1 KR100613842 B1 KR 100613842B1 KR 1020007013923 A KR1020007013923 A KR 1020007013923A KR 20007013923 A KR20007013923 A KR 20007013923A KR 100613842 B1 KR100613842 B1 KR 100613842B1
Authority
KR
South Korea
Prior art keywords
etching
silicon
plasma
undercut
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020007013923A
Other languages
English (en)
Korean (ko)
Other versions
KR20010052677A (ko
Inventor
도노휴존에프.
존슨데이비드제이.
디브러마이클더블유.
Original Assignee
유나시스 유에스에이 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유나시스 유에스에이 인코포레이티드 filed Critical 유나시스 유에스에이 인코포레이티드
Publication of KR20010052677A publication Critical patent/KR20010052677A/ko
Application granted granted Critical
Publication of KR100613842B1 publication Critical patent/KR100613842B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00571—Avoid or control under-cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
KR1020007013923A 1998-06-08 1999-06-08 절연체 구조 상에 실질적으로 언더컷이 없는 실리콘을만들기 위한 식각 방법 Expired - Lifetime KR100613842B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8846098P 1998-06-08 1998-06-08
US60/088,460 1998-06-08
US09/127,762 1998-07-31
US09/127,762 US6071822A (en) 1998-06-08 1998-07-31 Etching process for producing substantially undercut free silicon on insulator structures

Publications (2)

Publication Number Publication Date
KR20010052677A KR20010052677A (ko) 2001-06-25
KR100613842B1 true KR100613842B1 (ko) 2006-08-17

Family

ID=26778680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007013923A Expired - Lifetime KR100613842B1 (ko) 1998-06-08 1999-06-08 절연체 구조 상에 실질적으로 언더컷이 없는 실리콘을만들기 위한 식각 방법

Country Status (5)

Country Link
US (1) US6071822A (https=)
EP (1) EP1110235A1 (https=)
JP (2) JP2002518825A (https=)
KR (1) KR100613842B1 (https=)
WO (1) WO1999065065A1 (https=)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
AU2114001A (en) * 1999-10-15 2001-04-23 California Institute Of Technology Formation of smooth vertical surface on an optical component
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
KR100378353B1 (ko) * 2001-03-12 2003-03-29 삼성전자주식회사 Ｒｉｅ 식각시 발생하는 노칭 저감방법
JP4306149B2 (ja) * 2001-05-28 2009-07-29 株式会社デンソー 半導体装置の製造方法
US6660642B2 (en) 2001-07-25 2003-12-09 Chartered Semiconductor Manufacturing Ltd. Toxic residual gas removal by non-reactive ion sputtering
JP4117450B2 (ja) * 2002-03-18 2008-07-16 株式会社デンソー 半導体装置の製造方法
US6846746B2 (en) * 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
US7052117B2 (en) 2002-07-03 2006-05-30 Dimatix, Inc. Printhead having a thin pre-fired piezoelectric layer
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
DE10246063A1 (de) * 2002-10-02 2004-04-22 Robert Bosch Gmbh Verfahren zum anisotropen Ätzen eines Siliziumsubstrates
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
DE10247913A1 (de) * 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7294580B2 (en) * 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
EP1614155A2 (de) * 2003-04-17 2006-01-11 X-FAB Semiconductor Foundries AG Teststruktur zur elektrischen ueberpruefung der tiefen von trench-aetzungen in einem soi wafer und zugehoerige arbeitsverfahren
DE10317748B4 (de) * 2003-04-17 2008-10-30 X-Fab Semiconductor Foundries Ag Verfahren zur Überprüfung von Isoliergrabenätzungen in SOI-Scheiben mittels einer Teststruktur
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US7281778B2 (en) 2004-03-15 2007-10-16 Fujifilm Dimatix, Inc. High frequency droplet ejection device and method
US8491076B2 (en) 2004-03-15 2013-07-23 Fujifilm Dimatix, Inc. Fluid droplet ejection devices and methods
EP1793418B1 (en) * 2004-07-02 2013-06-12 Ulvac, Inc. Etching method and system
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
US7459100B2 (en) * 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
EP1836056B1 (en) 2004-12-30 2018-11-07 Fujifilm Dimatix, Inc. Ink jet printing
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7241683B2 (en) * 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
JP4275096B2 (ja) * 2005-04-14 2009-06-10 パナソニック株式会社 半導体チップの製造方法
US20060261436A1 (en) * 2005-05-19 2006-11-23 Freescale Semiconductor, Inc. Electronic device including a trench field isolation region and a process for forming the same
JP4512533B2 (ja) * 2005-07-27 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7491622B2 (en) * 2006-04-24 2009-02-17 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer formed using an inductively coupled plasma
US20070249127A1 (en) * 2006-04-24 2007-10-25 Freescale Semiconductor, Inc. Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
US7528078B2 (en) 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
KR100875442B1 (ko) 2006-12-28 2008-12-23 주식회사 래디언테크 웨이퍼 식각 방법
US7988247B2 (en) 2007-01-11 2011-08-02 Fujifilm Dimatix, Inc. Ejection of drops having variable drop size from an ink jet printer
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP2011100760A (ja) * 2009-11-04 2011-05-19 Ulvac Japan Ltd エッチング方法
US8467221B2 (en) 2010-07-09 2013-06-18 International Business Machines Corporation Magnetic spin shift register memory
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9070760B2 (en) * 2011-03-14 2015-06-30 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
US8691698B2 (en) 2012-02-08 2014-04-08 Lam Research Corporation Controlled gas mixing for smooth sidewall rapid alternating etch process
JP6093929B2 (ja) * 2012-07-04 2017-03-15 サムコ株式会社 高アスペクト比の凹凸構造を有するシリコン基板の製造方法
US9892931B2 (en) * 2013-10-14 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing apparatus and method thereof
CN105448697B (zh) * 2014-07-18 2018-05-01 中微半导体设备(上海)有限公司 高深宽比结构的刻蚀方法及mems器件的制作方法
US11173486B2 (en) 2019-02-13 2021-11-16 International Business Machines Corporation Fluidic cavities for on-chip layering and sealing of separation arrays
JP7382578B2 (ja) * 2019-12-27 2023-11-17 パナソニックＩｐマネジメント株式会社 プラズマ処理方法および素子チップの製造方法
JP7812340B2 (ja) 2020-03-31 2026-02-09 ラム リサーチ コーポレーション 塩素を用いた高アスペクト比誘電体エッチング
KR20230069877A (ko) * 2020-09-18 2023-05-19 램 리써치 코포레이션 플라즈마 에칭을 위한 패시베이션 화학 물질
JP7257088B1 (ja) 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
US20240096641A1 (en) * 2022-09-20 2024-03-21 Applied Materials, Inc. In-situ carbon liner for high aspect ratio features

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
JP2574094B2 (ja) * 1992-02-27 1997-01-22 株式会社日本製鋼所 エッチング方法
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP2996159B2 (ja) * 1995-10-26 1999-12-27 ヤマハ株式会社 ドライエッチング方法
US5854138A (en) * 1997-07-29 1998-12-29 Cypress Semiconductor Corp. Reduced-particle method of processing a semiconductor and/or integrated circuit

Also Published As

Publication number Publication date
WO1999065065B1 (en) 2000-08-03
KR20010052677A (ko) 2001-06-25
EP1110235A1 (en) 2001-06-27
JP2010283362A (ja) 2010-12-16
JP2002518825A (ja) 2002-06-25
WO1999065065A1 (en) 1999-12-16
US6071822A (en) 2000-06-06
WO1999065065A9 (en) 2000-07-06

Similar Documents

Publication Publication Date Title
KR100613842B1 (ko) 절연체 구조 상에 실질적으로 언더컷이 없는 실리콘을만들기 위한 식각 방법
US5501893A (en) Method of anisotropically etching silicon
KR100515424B1 (ko) 다양한기판의이방성플라즈마에칭방법
US6383938B2 (en) Method of anisotropic etching of substrates
US9666447B2 (en) Method for selectivity enhancement during dry plasma etching
US6716758B1 (en) Aspect ratio controlled etch selectivity using time modulated DC bias voltage
EP0814500B1 (en) Method for etching polycide structures
WO2008027240A2 (en) Selective etch chemistries for forming high aspect ratio features and associated structures
KR20160044545A (ko) 하드마스크를 측면으로 트리밍하기 위한 방법
US6432832B1 (en) Method of improving the profile angle between narrow and wide features
CN102484066B (zh) 干式蚀刻法
KR20010042983A (ko) 고 종횡비 개구를 형성하는 방법
US20090142859A1 (en) Plasma control using dual cathode frequency mixing
WO2017087410A2 (en) Etching method for a structure pattern layer having a first material and second material
KR20120097382A (ko) 반도체의 이방성 식각 방법
KR100549204B1 (ko) 실리콘 이방성 식각 방법
US9947597B2 (en) Defectivity metrology during DSA patterning
Shul et al. Selective deep-Si-trench etching with dimensional control
US5759922A (en) Control of etch profiles during extended overetch
Tadigadapa et al. Dry etching for micromachining applications
US12224160B2 (en) Topographic selective deposition
US20240395557A1 (en) Systems and methods for semiconductor etching
Flamm Plasma Chemistry, Basic Processes, and PECVD
Fleming et al. Characterization and application of deep Si trench etching
Khan et al. Applied Materials, Inc. 974 E. Arques Avenue, Sunnyvale, CA 94086, USA

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20120727

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130723

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140722

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150716

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160720

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170719

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180718

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20190609

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000