KR100566410B1 - 반도체 집적회로 - Google Patents
반도체 집적회로 Download PDFInfo
- Publication number
- KR100566410B1 KR100566410B1 KR1019980023054A KR19980023054A KR100566410B1 KR 100566410 B1 KR100566410 B1 KR 100566410B1 KR 1019980023054 A KR1019980023054 A KR 1019980023054A KR 19980023054 A KR19980023054 A KR 19980023054A KR 100566410 B1 KR100566410 B1 KR 100566410B1
- Authority
- KR
- South Korea
- Prior art keywords
- wiring
- sub
- mos transistor
- power supply
- main power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16364697A JP4056107B2 (ja) | 1997-06-20 | 1997-06-20 | 半導体集積回路 |
| JP97-163646 | 1997-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990007126A KR19990007126A (ko) | 1999-01-25 |
| KR100566410B1 true KR100566410B1 (ko) | 2007-08-16 |
Family
ID=15777909
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980023054A Expired - Lifetime KR100566410B1 (ko) | 1997-06-20 | 1998-06-19 | 반도체 집적회로 |
| KR1019980023053A Expired - Fee Related KR100530242B1 (ko) | 1997-06-20 | 1998-06-19 | 집적회로제조시감소된측벽축적을갖는금속에칭방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980023053A Expired - Fee Related KR100530242B1 (ko) | 1997-06-20 | 1998-06-19 | 집적회로제조시감소된측벽축적을갖는금속에칭방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US6107869A (enExample) |
| JP (1) | JP4056107B2 (enExample) |
| KR (2) | KR100566410B1 (enExample) |
| TW (1) | TW382802B (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4056107B2 (ja) * | 1997-06-20 | 2008-03-05 | エルピーダメモリ株式会社 | 半導体集積回路 |
| JP4014708B2 (ja) * | 1997-08-21 | 2007-11-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置の設計方法 |
| JP2001118999A (ja) * | 1999-10-15 | 2001-04-27 | Hitachi Ltd | ダイナミック型ramと半導体装置 |
| JP3609003B2 (ja) * | 2000-05-02 | 2005-01-12 | シャープ株式会社 | Cmos半導体集積回路 |
| KR100395876B1 (ko) * | 2000-10-18 | 2003-08-25 | 삼성전자주식회사 | 디램 장치의 접지 전압 공급 라인 구조 |
| DE10120790A1 (de) * | 2001-04-27 | 2002-11-21 | Infineon Technologies Ag | Schaltungsanordnung zur Verringerung der Versorgungsspannung eines Schaltungsteils sowie Verfahren zum Aktivieren eines Schaltungsteils |
| US6759873B2 (en) | 2001-05-22 | 2004-07-06 | The Board Of Trustees Of The University Of Illinois | Reverse biasing logic circuit |
| US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
| KR100403631B1 (ko) * | 2001-07-20 | 2003-10-30 | 삼성전자주식회사 | 비트라인 센스앰프 드라이버의 배치방법 |
| US6621756B2 (en) * | 2001-11-26 | 2003-09-16 | Macronix International Co., Ltd. | Compact integrated circuit with memory array |
| US6781892B2 (en) * | 2001-12-26 | 2004-08-24 | Intel Corporation | Active leakage control in single-ended full-swing caches |
| JP3786608B2 (ja) * | 2002-01-28 | 2006-06-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| AU2003223386A1 (en) * | 2002-03-27 | 2003-10-13 | The Regents Of The University Of California | Low-power high-performance memory cell and related methods |
| JP2004022647A (ja) | 2002-06-13 | 2004-01-22 | Fujitsu Ltd | 半導体集積回路 |
| JP4632625B2 (ja) * | 2002-11-14 | 2011-02-16 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| US6927429B2 (en) * | 2003-02-14 | 2005-08-09 | Freescale Semiconductor, Inc. | Integrated circuit well bias circuity |
| US7707255B2 (en) | 2003-07-01 | 2010-04-27 | Microsoft Corporation | Automatic grouping of electronic mail |
| JP2005101522A (ja) * | 2003-08-21 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
| US7026843B1 (en) * | 2004-01-16 | 2006-04-11 | Spansion Llc | Flexible cascode amplifier circuit with high gain for flash memory cells |
| JP4200926B2 (ja) | 2004-03-10 | 2008-12-24 | ソニー株式会社 | 半導体集積回路 |
| US8255828B2 (en) | 2004-08-16 | 2012-08-28 | Microsoft Corporation | Command user interface for displaying selectable software functionality controls |
| US7703036B2 (en) | 2004-08-16 | 2010-04-20 | Microsoft Corporation | User interface for displaying selectable software functionality controls that are relevant to a selected object |
| US8146016B2 (en) | 2004-08-16 | 2012-03-27 | Microsoft Corporation | User interface for displaying a gallery of formatting options applicable to a selected object |
| US7527446B2 (en) * | 2005-04-29 | 2009-05-05 | The Procter & Gamble Company | Children's combination toothbrush and toothpaste dispenser, and method |
| US8627222B2 (en) | 2005-09-12 | 2014-01-07 | Microsoft Corporation | Expanded search and find user interface |
| KR100704039B1 (ko) * | 2006-01-20 | 2007-04-04 | 삼성전자주식회사 | 디코딩 신호가 워드라인 방향으로 버싱되는 반도체 메모리장치 |
| JP2007227625A (ja) * | 2006-02-23 | 2007-09-06 | Toshiba Microelectronics Corp | 半導体集積回路及びそのレイアウト設計方法 |
| US7791406B1 (en) | 2006-04-04 | 2010-09-07 | Marvell International Ltd. | Low leakage power management |
| US7606057B2 (en) * | 2006-05-31 | 2009-10-20 | Arm Limited | Metal line layout in a memory cell |
| US9727989B2 (en) | 2006-06-01 | 2017-08-08 | Microsoft Technology Licensing, Llc | Modifying and formatting a chart using pictorially provided chart elements |
| US7408830B2 (en) * | 2006-11-07 | 2008-08-05 | Taiwan Semiconductor Manufacturing Co. | Dynamic power supplies for semiconductor devices |
| US7808804B2 (en) * | 2006-11-10 | 2010-10-05 | Samsung Electronics Co., Ltd. | Power line layout |
| US8484578B2 (en) | 2007-06-29 | 2013-07-09 | Microsoft Corporation | Communication between a document editor in-space user interface and a document editor out-space user interface |
| US8762880B2 (en) | 2007-06-29 | 2014-06-24 | Microsoft Corporation | Exposing non-authoring features through document status information in an out-space user interface |
| JP2009038306A (ja) * | 2007-08-03 | 2009-02-19 | Elpida Memory Inc | 半導体記憶装置 |
| JP5528662B2 (ja) | 2007-09-18 | 2014-06-25 | ソニー株式会社 | 半導体集積回路 |
| JP4636077B2 (ja) * | 2007-11-07 | 2011-02-23 | ソニー株式会社 | 半導体集積回路 |
| FR2927468B1 (fr) * | 2008-02-08 | 2010-04-23 | E2V Semiconductors | Circuit integre a grand nombre de circuits elementaires identiques alimentes en parallele. |
| JP4492736B2 (ja) * | 2008-06-12 | 2010-06-30 | ソニー株式会社 | 半導体集積回路 |
| US9665850B2 (en) | 2008-06-20 | 2017-05-30 | Microsoft Technology Licensing, Llc | Synchronized conversation-centric message list and message reading pane |
| US8717093B2 (en) * | 2010-01-08 | 2014-05-06 | Mindspeed Technologies, Inc. | System on chip power management through package configuration |
| JP5709197B2 (ja) * | 2010-05-21 | 2015-04-30 | 国立大学法人 東京大学 | 集積回路装置 |
| JP2015076111A (ja) * | 2013-10-08 | 2015-04-20 | マイクロン テクノロジー, インク. | 半導体装置 |
| US10020252B2 (en) | 2016-11-04 | 2018-07-10 | Micron Technology, Inc. | Wiring with external terminal |
| US10354705B2 (en) | 2017-07-05 | 2019-07-16 | Micron Technology, Inc. | Apparatuses and methods for controlling word lines and sense amplifiers |
| US10141932B1 (en) | 2017-08-04 | 2018-11-27 | Micron Technology, Inc. | Wiring with external terminal |
| US10304497B2 (en) | 2017-08-17 | 2019-05-28 | Micron Technology, Inc. | Power supply wiring in a semiconductor memory device |
| TWI646515B (zh) * | 2018-01-19 | 2019-01-01 | 友達光電股份有限公司 | 顯示裝置 |
| US10877908B2 (en) * | 2018-09-25 | 2020-12-29 | Micron Technology, Inc. | Isolation component |
| US12482519B2 (en) | 2023-01-19 | 2025-11-25 | Micron Technology, Inc. | Microelectronic devices and memory devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0435064A (ja) * | 1990-05-31 | 1992-02-05 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JPH08195083A (ja) * | 1995-01-17 | 1996-07-30 | Toshiba Microelectron Corp | 半導体記憶装置 |
| JPH0974175A (ja) * | 1995-09-04 | 1997-03-18 | Texas Instr Japan Ltd | 半導体装置及び半導体メモリ装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309040A (en) * | 1989-11-07 | 1994-05-03 | Fujitsu Limited | Voltage reducing circuit |
| KR100201980B1 (ko) * | 1990-05-14 | 1999-06-15 | 스즈키 진이치로 | 반도체집적회로 |
| JP2896197B2 (ja) | 1990-06-01 | 1999-05-31 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置 |
| US5160407A (en) * | 1991-01-02 | 1992-11-03 | Applied Materials, Inc. | Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer |
| JP3112047B2 (ja) * | 1991-11-08 | 2000-11-27 | 株式会社日立製作所 | 半導体集積回路 |
| US5614847A (en) * | 1992-04-14 | 1997-03-25 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
| US5583457A (en) * | 1992-04-14 | 1996-12-10 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
| JP3216925B2 (ja) * | 1992-04-14 | 2001-10-09 | 株式会社日立製作所 | 半導体集積回路 |
| JP3347766B2 (ja) * | 1992-06-08 | 2002-11-20 | 日本トムソン株式会社 | リニアエンコーダ及びこれを具備した案内ユニット |
| US5408144A (en) * | 1993-01-07 | 1995-04-18 | Hitachi, Ltd. | Semiconductor integrated circuits with power reduction mechanism |
| JP3047659B2 (ja) * | 1993-02-02 | 2000-05-29 | 株式会社日立製作所 | 半導体集積回路 |
| JP3102179B2 (ja) * | 1993-01-07 | 2000-10-23 | 株式会社日立製作所 | 半導体集積回路 |
| KR0169157B1 (ko) * | 1993-11-29 | 1999-02-01 | 기다오까 다까시 | 반도체 회로 및 mos-dram |
| JP3561012B2 (ja) * | 1994-11-07 | 2004-09-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JP2931776B2 (ja) * | 1995-08-21 | 1999-08-09 | 三菱電機株式会社 | 半導体集積回路 |
| JP3869045B2 (ja) * | 1995-11-09 | 2007-01-17 | 株式会社日立製作所 | 半導体記憶装置 |
| TW324101B (en) * | 1995-12-21 | 1998-01-01 | Hitachi Ltd | Semiconductor integrated circuit and its working method |
| JP3684748B2 (ja) * | 1997-01-22 | 2005-08-17 | アンデン株式会社 | 負荷駆動回路 |
| JP4056107B2 (ja) * | 1997-06-20 | 2008-03-05 | エルピーダメモリ株式会社 | 半導体集積回路 |
-
1997
- 1997-06-20 JP JP16364697A patent/JP4056107B2/ja not_active Expired - Fee Related
-
1998
- 1998-05-15 TW TW087107562A patent/TW382802B/zh not_active IP Right Cessation
- 1998-06-11 US US09/096,456 patent/US6107869A/en not_active Expired - Lifetime
- 1998-06-19 KR KR1019980023054A patent/KR100566410B1/ko not_active Expired - Lifetime
- 1998-06-19 KR KR1019980023053A patent/KR100530242B1/ko not_active Expired - Fee Related
-
2000
- 2000-02-28 US US09/513,929 patent/US6339358B1/en not_active Expired - Lifetime
-
2002
- 2002-01-15 US US10/045,105 patent/US6747509B2/en not_active Expired - Lifetime
-
2004
- 2004-06-03 US US10/859,141 patent/US7199648B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0435064A (ja) * | 1990-05-31 | 1992-02-05 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JPH08195083A (ja) * | 1995-01-17 | 1996-07-30 | Toshiba Microelectron Corp | 半導体記憶装置 |
| JPH0974175A (ja) * | 1995-09-04 | 1997-03-18 | Texas Instr Japan Ltd | 半導体装置及び半導体メモリ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990007125A (ko) | 1999-01-25 |
| JP4056107B2 (ja) | 2008-03-05 |
| US6747509B2 (en) | 2004-06-08 |
| JPH1117135A (ja) | 1999-01-22 |
| US20020057129A1 (en) | 2002-05-16 |
| KR19990007126A (ko) | 1999-01-25 |
| US20040217776A1 (en) | 2004-11-04 |
| KR100530242B1 (ko) | 2006-01-27 |
| TW382802B (en) | 2000-02-21 |
| US6339358B1 (en) | 2002-01-15 |
| US7199648B2 (en) | 2007-04-03 |
| US6107869A (en) | 2000-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100566410B1 (ko) | 반도체 집적회로 | |
| JP3085455B2 (ja) | スタティックram | |
| US20020000583A1 (en) | System with meshed power and signal buses on cell array | |
| US20080279033A1 (en) | Semiconductor integrated circuit device | |
| US7323727B2 (en) | System with meshed power and signal buses on cell array | |
| US11081169B2 (en) | Semiconductor device and data retention method | |
| US7286390B2 (en) | Memory cell and semiconductor integrated circuit device | |
| CN108431894B (zh) | 半导体存储装置 | |
| JP2010040903A (ja) | 半導体記憶装置 | |
| US6567328B1 (en) | Memory macro with modular peripheral circuit elements | |
| US10706902B2 (en) | Semiconductor device | |
| US6914797B2 (en) | Semiconductor memory | |
| JP4600835B2 (ja) | 半導体集積回路 | |
| US8848460B2 (en) | Semiconductor device having plural data buses and plural buffer circuits connected to data buses | |
| US6822887B2 (en) | Semiconductor circuit device with mitigated load on interconnection line | |
| KR100600461B1 (ko) | 반도체 장치 | |
| US11948620B2 (en) | Semiconductor device having power control circuit | |
| JP2006210736A (ja) | 半導体記憶装置 | |
| JP3560763B2 (ja) | 半導体記憶装置の製造方法 | |
| JP2002203391A (ja) | 半導体記憶装置及び分散ドライバの配置方法 | |
| JPH0513709A (ja) | 半導体記憶装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19980619 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20030410 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19980619 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20050527 Patent event code: PE09021S01D |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
Patent event date: 20050622 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20051227 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20060324 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20060324 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20090311 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20100310 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20110223 Start annual number: 6 End annual number: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20120302 Start annual number: 7 End annual number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20130304 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20130304 Start annual number: 8 End annual number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20140228 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
Payment date: 20140228 Start annual number: 9 End annual number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20150224 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
Payment date: 20150224 Start annual number: 10 End annual number: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20160317 Year of fee payment: 11 |
|
| PR1001 | Payment of annual fee |
Payment date: 20160317 Start annual number: 11 End annual number: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20170317 Year of fee payment: 12 |
|
| PR1001 | Payment of annual fee |
Payment date: 20170317 Start annual number: 12 End annual number: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20180316 Year of fee payment: 13 |
|
| PR1001 | Payment of annual fee |
Payment date: 20180316 Start annual number: 13 End annual number: 13 |
|
| EXPY | Expiration of term | ||
| PC1801 | Expiration of term |
Termination date: 20181219 Termination category: Expiration of duration |