KR100497103B1 - 실리콘 게르마늄 바이폴라 트랜지스터 - Google Patents

실리콘 게르마늄 바이폴라 트랜지스터 Download PDF

Info

Publication number
KR100497103B1
KR100497103B1 KR10-2003-7009481A KR20037009481A KR100497103B1 KR 100497103 B1 KR100497103 B1 KR 100497103B1 KR 20037009481 A KR20037009481 A KR 20037009481A KR 100497103 B1 KR100497103 B1 KR 100497103B1
Authority
KR
South Korea
Prior art keywords
source gas
sige
region
collector
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2003-7009481A
Other languages
English (en)
Korean (ko)
Other versions
KR20030069215A (ko
Inventor
잭 온 추
더글라스 던 쿨바우그
제임스 스터우트 던
데이비드 그린버그
데이비드 하라메
바산쓰 자간나탄
로브 알렌 존슨
루이스 란제로티
카른 터너 스코넨버그
란 웨인 워쓰리치
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR20030069215A publication Critical patent/KR20030069215A/ko
Application granted granted Critical
Publication of KR100497103B1 publication Critical patent/KR100497103B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
KR10-2003-7009481A 2001-01-30 2001-11-23 실리콘 게르마늄 바이폴라 트랜지스터 Expired - Fee Related KR100497103B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/774,126 US6426265B1 (en) 2001-01-30 2001-01-30 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
US09/774,126 2001-01-30
PCT/GB2001/005149 WO2002061820A1 (en) 2001-01-30 2001-11-23 Silicon germanium bipolar transistor

Publications (2)

Publication Number Publication Date
KR20030069215A KR20030069215A (ko) 2003-08-25
KR100497103B1 true KR100497103B1 (ko) 2005-06-23

Family

ID=25100308

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7009481A Expired - Fee Related KR100497103B1 (ko) 2001-01-30 2001-11-23 실리콘 게르마늄 바이폴라 트랜지스터

Country Status (11)

Country Link
US (4) US6426265B1 (enExample)
EP (1) EP1356504A1 (enExample)
JP (2) JP4700897B2 (enExample)
KR (1) KR100497103B1 (enExample)
CN (1) CN1322564C (enExample)
CZ (1) CZ20032066A3 (enExample)
HU (1) HUP0302872A3 (enExample)
IL (2) IL156930A0 (enExample)
PL (1) PL203317B1 (enExample)
TW (1) TW522494B (enExample)
WO (1) WO2002061820A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
US6534371B2 (en) * 2001-06-11 2003-03-18 International Business Machines Corporation C implants for improved SiGe bipolar yield
US6649482B1 (en) * 2001-06-15 2003-11-18 National Semiconductor Corporation Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor
US7087979B1 (en) * 2001-06-15 2006-08-08 National Semiconductor Corporation Bipolar transistor with an ultra small self-aligned polysilicon emitter
US6784065B1 (en) 2001-06-15 2004-08-31 National Semiconductor Corporation Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor
WO2003012840A2 (de) * 2001-07-27 2003-02-13 Ihp Gmbh-Innovations For High Performance Microelectronics/Institut Für Innovative Mikroelektronik Verfahren und vorrichtung zum herstellen dünner epitaktischer halbleiterschichten
US6706583B1 (en) * 2001-10-19 2004-03-16 Lsi Logic Corporation High speed low noise transistor
KR20030035152A (ko) * 2001-10-30 2003-05-09 주식회사 하이닉스반도체 반도체웨이퍼 제조방법
US6870204B2 (en) * 2001-11-21 2005-03-22 Astralux, Inc. Heterojunction bipolar transistor containing at least one silicon carbide layer
DE10160509A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
JP3914064B2 (ja) * 2002-02-28 2007-05-16 富士通株式会社 混晶膜の成長方法及び装置
US6593640B1 (en) * 2002-04-01 2003-07-15 Maxim Integrated Products, Inc. Bipolar transistor and methods of forming bipolar transistors
TWI284348B (en) * 2002-07-01 2007-07-21 Macronix Int Co Ltd Method for fabricating raised source/drain of semiconductor device
US6699765B1 (en) * 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
US6972441B2 (en) * 2002-11-27 2005-12-06 Intel Corporation Silicon germanium heterojunction bipolar transistor with step-up carbon profile
US6995427B2 (en) * 2003-01-29 2006-02-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
US7517768B2 (en) * 2003-03-31 2009-04-14 Intel Corporation Method for fabricating a heterojunction bipolar transistor
DE10316531A1 (de) * 2003-04-10 2004-07-08 Infineon Technologies Ag Bipolar-Transistor
US7157379B2 (en) * 2003-09-23 2007-01-02 Intel Corporation Strained semiconductor structures
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US20050114227A1 (en) * 2003-11-25 2005-05-26 Carter Craig M. Web-based tool for maximizing value from surplus assets
US7115955B2 (en) * 2004-07-30 2006-10-03 International Business Machines Corporation Semiconductor device having a strained raised source/drain
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
KR100833491B1 (ko) * 2005-12-08 2008-05-29 한국전자통신연구원 임베디드 상변화 메모리 및 그 제조방법
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
CN101496150B (zh) * 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
US8029620B2 (en) * 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
JP2008235560A (ja) 2007-03-20 2008-10-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
US8130737B2 (en) * 2008-03-12 2012-03-06 Samsung Electronics Co., Ltd. System and method for a multiple hop wireless network
US8476686B2 (en) * 2008-07-09 2013-07-02 Infineon Technologies Ag Memory device and method for making same
US8343825B2 (en) 2011-01-19 2013-01-01 International Business Machines Corporation Reducing dislocation formation in semiconductor devices through targeted carbon implantation
US9064796B2 (en) 2012-08-13 2015-06-23 Infineon Technologies Ag Semiconductor device and method of making the same
WO2015094208A1 (en) 2013-12-18 2015-06-25 Intel Corporation Partial layer transfer system and method
CN103943670B (zh) * 2014-04-12 2016-10-05 北京工业大学 超结集电区应变硅异质结双极晶体管
KR102130459B1 (ko) * 2016-02-29 2020-07-07 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
CN107046058A (zh) * 2017-04-13 2017-08-15 中国电子科技集团公司第二十四研究所 一种具有应变Si组合发射区的异质结双极晶体管及其制备方法
CN113937090B (zh) * 2020-06-29 2025-11-18 中国科学院微电子研究所 堆叠式电容器、半导体存储器件及制备方法
FR3115393A1 (fr) * 2020-10-19 2022-04-22 Stmicroelectronics (Crolles 2) Sas Transistor bipolaire et procédé de fabrication

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887134A (en) 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
JP2569058B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 半導体装置
US5159424A (en) 1988-12-10 1992-10-27 Canon Kabushiki Kaisha Semiconductor device having a high current gain and a higher ge amount at the base region than at the emitter and collector region, and photoelectric conversion apparatus using the device
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5321302A (en) 1990-07-25 1994-06-14 Nec Corporation Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency
JPH04106980A (ja) * 1990-08-24 1992-04-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH05144834A (ja) 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
JPH05102177A (ja) * 1991-10-02 1993-04-23 Hitachi Ltd 半導体集積回路装置及びこれを用いた電子計算機
EP0609351A4 (en) 1991-10-23 1995-01-04 Microunity Systems Eng BOPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND BREAKTHROUGH CHARACTERISTICS.
JPH05198787A (ja) * 1991-11-08 1993-08-06 Canon Inc 固体撮像装置及びその製造方法
JP3077841B2 (ja) * 1992-01-20 2000-08-21 日本電気株式会社 半導体装置およびその製造方法
JP2582519B2 (ja) 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5523243A (en) * 1992-12-21 1996-06-04 International Business Machines Corporation Method of fabricating a triple heterojunction bipolar transistor
US5320972A (en) 1993-01-07 1994-06-14 Northern Telecom Limited Method of forming a bipolar transistor
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JPH0750410A (ja) 1993-08-06 1995-02-21 Hitachi Ltd 半導体結晶積層体及びその形成方法並びに半導体装置
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
US5360986A (en) * 1993-10-05 1994-11-01 Motorola, Inc. Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method
JPH07153928A (ja) * 1993-11-26 1995-06-16 Toshiba Corp 半導体基板およびその製造方法
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
US5734193A (en) * 1994-01-24 1998-03-31 The United States Of America As Represented By The Secretary Of The Air Force Termal shunt stabilization of multiple part heterojunction bipolar transistors
US5646073A (en) 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product
US5846867A (en) * 1995-12-20 1998-12-08 Sony Corporation Method of producing Si-Ge base heterojunction bipolar device
KR970054343A (ko) * 1995-12-20 1997-07-31 이준 규소/규소게르마늄 쌍극자 트랜지스터 제조방법
US6800881B2 (en) * 1996-12-09 2004-10-05 Ihp Gmbh-Innovations For High Performance Microelectronics/Institut Fur Innovative Mikroelektronik Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
DE19652423A1 (de) 1996-12-09 1998-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor und Verfahren zur Herstellung der epitaktischen Einzelschichten eines derartigen Transistors
US5963817A (en) 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
DE69935024T2 (de) * 1998-02-20 2007-05-24 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleiterbauelement mit Bipolartransistor
JPH11283993A (ja) * 1998-03-31 1999-10-15 Mitsubishi Heavy Ind Ltd 半導体装置の製造方法
US6815303B2 (en) * 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
FR2779571B1 (fr) * 1998-06-05 2003-01-24 St Microelectronics Sa Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee
US6087683A (en) * 1998-07-31 2000-07-11 Lucent Technologies Silicon germanium heterostructure bipolar transistor with indium doped base
JP2000068284A (ja) * 1998-08-19 2000-03-03 Sharp Corp ヘテロ接合バイポーラトランジスタの製造方法及びパワーアンプ
JP3549408B2 (ja) * 1998-09-03 2004-08-04 松下電器産業株式会社 バイポーラトランジスタ
DE19857640A1 (de) * 1998-12-14 2000-06-15 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE60042666D1 (de) * 1999-01-14 2009-09-17 Panasonic Corp Halbleiterbauelement und Verfahren zu dessen Herstellung
US6258695B1 (en) * 1999-02-04 2001-07-10 International Business Machines Corporation Dislocation suppression by carbon incorporation
DE60042045D1 (de) * 1999-06-22 2009-06-04 Panasonic Corp Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
EP1672700A2 (en) * 1999-11-15 2006-06-21 Matsushita Electric Industrial Co., Ltd. Field effect semiconductor device
US6461925B1 (en) * 2000-03-30 2002-10-08 Motorola, Inc. Method of manufacturing a heterojunction BiCMOS integrated circuit
US6316795B1 (en) * 2000-04-03 2001-11-13 Hrl Laboratories, Llc Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors
US6333235B1 (en) * 2000-04-12 2001-12-25 Industrial Technologyresearch Institute Method for forming SiGe bipolar transistor
US6417058B1 (en) * 2000-06-14 2002-07-09 Sony Corporation SiGe/poly for low resistance extrinsic base npn transistor
US20020071277A1 (en) 2000-08-12 2002-06-13 Starner Thad E. System and method for capturing an image
US6894366B2 (en) * 2000-10-10 2005-05-17 Texas Instruments Incorporated Bipolar junction transistor with a counterdoped collector region
US6396107B1 (en) * 2000-11-20 2002-05-28 International Business Machines Corporation Trench-defined silicon germanium ESD diode network
US6440811B1 (en) * 2000-12-21 2002-08-27 International Business Machines Corporation Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme
US6509242B2 (en) * 2001-01-12 2003-01-21 Agere Systems Inc. Heterojunction bipolar transistor
US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US6465870B2 (en) * 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
US6534371B2 (en) * 2001-06-11 2003-03-18 International Business Machines Corporation C implants for improved SiGe bipolar yield

Also Published As

Publication number Publication date
US6815802B2 (en) 2004-11-09
HUP0302872A3 (en) 2004-07-28
US7173274B2 (en) 2007-02-06
PL362710A1 (en) 2004-11-02
IL156930A (en) 2010-04-15
CN1502124A (zh) 2004-06-02
JP4917051B2 (ja) 2012-04-18
CN1322564C (zh) 2007-06-20
US7713829B2 (en) 2010-05-11
HUP0302872A2 (hu) 2003-12-29
TW522494B (en) 2003-03-01
JP2008153684A (ja) 2008-07-03
WO2002061820A1 (en) 2002-08-08
IL156930A0 (en) 2004-02-08
CZ20032066A3 (cs) 2003-11-12
US20050054171A1 (en) 2005-03-10
PL203317B1 (pl) 2009-09-30
JP2004520711A (ja) 2004-07-08
JP4700897B2 (ja) 2011-06-15
US20080124881A1 (en) 2008-05-29
US20020121676A1 (en) 2002-09-05
EP1356504A1 (en) 2003-10-29
US20020100917A1 (en) 2002-08-01
KR20030069215A (ko) 2003-08-25
US6426265B1 (en) 2002-07-30

Similar Documents

Publication Publication Date Title
KR100497103B1 (ko) 실리콘 게르마늄 바이폴라 트랜지스터
JP4060580B2 (ja) ヘテロ接合バイポーラトランジスタ
US6455871B1 (en) SiGe MODFET with a metal-oxide film and method for fabricating the same
US6977398B2 (en) C implants for improved SiGe bipolar yield
JP2004520711A5 (enExample)
JP2778553B2 (ja) 半導体装置およびその製造方法
US7538004B2 (en) Method of fabrication for SiGe heterojunction bipolar transistor (HBT)
US7714361B2 (en) Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor
JP2000077425A (ja) バイポーラトランジスタ
US8227319B2 (en) Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor
US7012009B2 (en) Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

L13-X000 Limitation or reissue of ip right requested

St.27 status event code: A-2-3-L10-L13-lim-X000

U15-X000 Partial renewal or maintenance fee paid modifying the ip right scope

St.27 status event code: A-4-4-U10-U15-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

L13-X000 Limitation or reissue of ip right requested

St.27 status event code: A-2-3-L10-L13-lim-X000

U15-X000 Partial renewal or maintenance fee paid modifying the ip right scope

St.27 status event code: A-4-4-U10-U15-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20130524

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

L13-X000 Limitation or reissue of ip right requested

St.27 status event code: A-2-3-L10-L13-lim-X000

U15-X000 Partial renewal or maintenance fee paid modifying the ip right scope

St.27 status event code: A-4-4-U10-U15-oth-X000

FPAY Annual fee payment

Payment date: 20140527

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20150527

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20160517

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20170522

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180616

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180616

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000