KR100493486B1 - 개선된 전도층 엣칭방법 및 장치 - Google Patents

개선된 전도층 엣칭방법 및 장치 Download PDF

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Publication number
KR100493486B1
KR100493486B1 KR10-1999-7008438A KR19997008438A KR100493486B1 KR 100493486 B1 KR100493486 B1 KR 100493486B1 KR 19997008438 A KR19997008438 A KR 19997008438A KR 100493486 B1 KR100493486 B1 KR 100493486B1
Authority
KR
South Korea
Prior art keywords
etching
conductive
layer
path
conductive layer
Prior art date
Application number
KR10-1999-7008438A
Other languages
English (en)
Korean (ko)
Other versions
KR20000076337A (ko
Inventor
아에트데이비드알
무세르제프리브이
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20000076337A publication Critical patent/KR20000076337A/ko
Application granted granted Critical
Publication of KR100493486B1 publication Critical patent/KR100493486B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR10-1999-7008438A 1997-03-19 1998-03-17 개선된 전도층 엣칭방법 및 장치 KR100493486B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/820,533 US5849641A (en) 1997-03-19 1997-03-19 Methods and apparatus for etching a conductive layer to improve yield
US8/820,533 1997-03-19
US08/820,533 1997-03-19
PCT/US1998/005202 WO1998042020A1 (en) 1997-03-19 1998-03-17 Method for etching a conductive layer

Publications (2)

Publication Number Publication Date
KR20000076337A KR20000076337A (ko) 2000-12-26
KR100493486B1 true KR100493486B1 (ko) 2005-06-03

Family

ID=25231067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-7008438A KR100493486B1 (ko) 1997-03-19 1998-03-17 개선된 전도층 엣칭방법 및 장치

Country Status (8)

Country Link
US (1) US5849641A (ja)
EP (1) EP1010203B1 (ja)
JP (1) JP4451934B2 (ja)
KR (1) KR100493486B1 (ja)
AT (1) ATE252275T1 (ja)
DE (1) DE69819023T2 (ja)
TW (1) TW468226B (ja)
WO (1) WO1998042020A1 (ja)

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US6159861A (en) * 1997-08-28 2000-12-12 Nec Corporation Method of manufacturing semiconductor device
KR100257080B1 (ko) * 1997-09-26 2000-05-15 김영환 반도체소자의제조방법
US6077762A (en) * 1997-12-22 2000-06-20 Vlsi Technology, Inc. Method and apparatus for rapidly discharging plasma etched interconnect structures
JP3819576B2 (ja) * 1997-12-25 2006-09-13 沖電気工業株式会社 半導体装置及びその製造方法
US5939335A (en) 1998-01-06 1999-08-17 International Business Machines Corporation Method for reducing stress in the metallization of an integrated circuit
US6106663A (en) * 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
US6248252B1 (en) * 1999-02-24 2001-06-19 Advanced Micro Devices, Inc. Method of fabricating sub-micron metal lines
TW573369B (en) * 1999-03-31 2004-01-21 Lam Res Corp Improved techniques for etching an aluminum neodymium-containing layer
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6387820B1 (en) * 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. BC13/AR chemistry for metal overetching on a high density plasma etcher
DE10149736C1 (de) * 2001-10-09 2003-04-17 Infineon Technologies Ag Verfahren zum Ätzen eines Metallschichtsystems
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
KR100831572B1 (ko) * 2005-12-29 2008-05-21 동부일렉트로닉스 주식회사 반도체 소자의 배선 형성방법
JP2007214171A (ja) * 2006-02-07 2007-08-23 Hitachi High-Technologies Corp エッチング処理方法
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
US8409937B2 (en) * 2011-01-07 2013-04-02 Eastman Kodak Company Producing transistor including multi-layer reentrant profile
CN106158724B (zh) * 2015-03-24 2019-03-12 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
FR2312114A1 (fr) * 1975-05-22 1976-12-17 Ibm Attaque de materiaux par ions reactifs
DE3071299D1 (en) * 1979-07-31 1986-01-30 Fujitsu Ltd Dry etching of metal film
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
JPS63238288A (ja) * 1987-03-27 1988-10-04 Fujitsu Ltd ドライエツチング方法
US4838992A (en) * 1987-05-27 1989-06-13 Northern Telecom Limited Method of etching aluminum alloys in semi-conductor wafers
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
NL8902744A (nl) * 1989-11-07 1991-06-03 Koninkl Philips Electronics Nv Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat.
DE3940083A1 (de) * 1989-12-04 1991-06-13 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnen in integrierten halbleiterschaltungen
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
JP3170791B2 (ja) * 1990-09-11 2001-05-28 ソニー株式会社 Ａｌ系材料膜のエッチング方法
US5211804A (en) * 1990-10-16 1993-05-18 Oki Electric Industry, Co., Ltd. Method for dry etching
US5185058A (en) * 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5126008A (en) * 1991-05-03 1992-06-30 Applied Materials, Inc. Corrosion-free aluminum etching process for fabricating an integrated circuit structure
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
DE4136178A1 (de) * 1991-11-02 1993-05-06 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen, De Schaltung zur kontinuierlichen zoom-einstellung der bildbreite in einem fernsehempfaenger
JPH06108272A (ja) * 1992-09-30 1994-04-19 Sumitomo Metal Ind Ltd プラズマエッチング方法
JP3449741B2 (ja) * 1992-11-26 2003-09-22 東京エレクトロン株式会社 プラズマエッチング方法
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
US5783101A (en) * 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma

Also Published As

Publication number Publication date
DE69819023T2 (de) 2004-04-22
EP1010203B1 (en) 2003-10-15
ATE252275T1 (de) 2003-11-15
JP4451934B2 (ja) 2010-04-14
DE69819023D1 (de) 2003-11-20
JP2001517367A (ja) 2001-10-02
US5849641A (en) 1998-12-15
KR20000076337A (ko) 2000-12-26
TW468226B (en) 2001-12-11
WO1998042020A1 (en) 1998-09-24
EP1010203A1 (en) 2000-06-21

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