KR100480831B1 - 열처리장치 및 열처리방법 - Google Patents
열처리장치 및 열처리방법 Download PDFInfo
- Publication number
- KR100480831B1 KR100480831B1 KR10-2002-0062350A KR20020062350A KR100480831B1 KR 100480831 B1 KR100480831 B1 KR 100480831B1 KR 20020062350 A KR20020062350 A KR 20020062350A KR 100480831 B1 KR100480831 B1 KR 100480831B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- heat treatment
- treatment chamber
- semiconductor wafer
- heat
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 180
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 22
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 230000006837 decompression Effects 0.000 claims abstract description 6
- 230000004313 glare Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 32
- 230000007246 mechanism Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 77
- 150000002500 ions Chemical class 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000001994 activation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Furnace Details (AREA)
Abstract
Description
Claims (12)
- 기판에 광을 조사함으로써 기판을 열처리하는 열처리장치에 있어서,기판을 수납하는 열처리실과;기판을 예비 가열하는 어시스트(assist) 가열수단과;기판에 대하여 섬광을 조사함으로써, 상기 어시스트 가열수단으로 예비 가열된 기판을 처리온도까지 승온시키도록 한 플래시램프를 갖는 플래시 가열수단과;상기 플래시 가열수단에 의한 기판의 승온시에 상기 열처리실을 감압하는 감압수단과;를 구비하는 것을 특징으로 하는 열처리장치.
- 제1항에 있어서,상기 플래시램프는 크세논 플래시램프인 것을 특징으로 하는 열처리장치.
- 제1항에 있어서,상기 감압수단은 상기 열처리실을 1/10기압∼l/1000기압까지 감압하게 되어 있는 것을 특징으로 하는 열처리장치.
- 제3항에 있어서,상기 어시스트 가열수단은 기판을 섭씨200도∼섭씨600도의 온도로 예비 가열하게 되어 있는 것을 특징으로 하는 열처리장치.
- 제3항에 있어서,상기 플래시 가열수단은 기판을 섭씨1000도∼섭씨1100도까지 승온시키게 되어 있는 것을 특징으로 하는 열처리장치.
- 제3항에 있어서,상기 플래시 가열수단은, 0.1∼10밀리세컨드 사이에 기판을 처리온도까지 승온시키게 되어 있는 것을 특징으로 하는 열처리장치.
- 기판에 광을 조사함으로써 기판을 열처리하는 열처리방법에 있어서,기판을 열처리실 내에 반입하는 기판 반입공정과;상기 열처리실 내에 반입된 기판을 예비 가열하는 예비 가열공정과;상기 열처리실 내를 예비 가열공정과 병행하여 감압하는 감압공정과;상기 열처리실 내의 기판을 미리 설정된 예비 가열온도까지 예비 가열한 후에, 기판에 대하여 섬광을 조사함으로써, 기판을 처리온도까지 승온시키도록 한 플래시램프에 의한 플래시 가열공정과;상기 열처리실을 대기에 개방하는 개방공정과;상기 열처리실로부터 기판을 반출하는 기판 반출공정과;를 포함하는 것을 특징으로 하는 열처리방법.
- 제7항에 있어서,상기 플래시 가열공정에서는, 상기 열처리실 내의 기판이 미리 설정된 예비 가열온도까지 승온된 직후에, 기판에 대하여 섬광을 조사함으로써, 기판을 처리온도까지 승온시키는 것을 특징으로 하는 열처리방법.
- 제8항에 있어서,상기 감압공정에서는, 상기 열처리실을 1/10기압∼1/1000기압까지 감압하는 것을 특징으로 하는 열처리방법.
- 제9항에 있어서,상기 예비 가열공정에서는, 기판을 섭씨200도∼섭씨600도의 온도로 예비 가열하는 것을 특징으로 하는 열처리방법.
- 제9항에 있어서,상기 플래시 가열공정에서는, 기판을 섭씨1000도∼섭씨1100도까지 승온시키는 것을 특징으로 하는 열처리방법.
- 제9항에 있어서,상기 플래시 가열공정에서는, 0.1∼10밀리세컨드 사이에 기판을 처리온도까지 승온시키는 것을 특징으로 하는 열처리방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00330230 | 2001-10-29 | ||
JP2001330230A JP3798674B2 (ja) | 2001-10-29 | 2001-10-29 | 熱処理装置および熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030035895A KR20030035895A (ko) | 2003-05-09 |
KR100480831B1 true KR100480831B1 (ko) | 2005-04-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-2002-0062350A KR100480831B1 (ko) | 2001-10-29 | 2002-10-14 | 열처리장치 및 열처리방법 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20030081945A1 (ko) |
JP (1) | JP3798674B2 (ko) |
KR (1) | KR100480831B1 (ko) |
TW (1) | TW561528B (ko) |
Cited By (1)
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KR101788909B1 (ko) | 2011-03-23 | 2017-10-20 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
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DE10393962B4 (de) | 2002-12-20 | 2019-03-14 | Mattson Technology Inc. | Verfahren und Vorrichtung zum Stützen eines Werkstücks und zur Wärmebehandlung des Werkstücks |
US20040241048A1 (en) * | 2003-05-30 | 2004-12-02 | Applera Corporation | Thermal cycling apparatus and method for providing thermal uniformity |
JP2006019565A (ja) * | 2004-07-02 | 2006-01-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP4720154B2 (ja) * | 2004-11-19 | 2011-07-13 | ウシオ電機株式会社 | フラッシュランプ発光装置 |
JP2006179583A (ja) * | 2004-12-21 | 2006-07-06 | Ushio Inc | 閃光放射装置 |
WO2006130573A2 (en) | 2005-06-01 | 2006-12-07 | Mattson Technology, Inc. | Optimizing the thermal budget during a pulsed heating process |
US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
WO2008058397A1 (en) | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
JP4874830B2 (ja) | 2007-02-06 | 2012-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
JP5396703B2 (ja) * | 2007-10-09 | 2014-01-22 | 富士通セミコンダクター株式会社 | 熱処理装置及び方法、並びに半導体装置の製造方法 |
US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
JP5507274B2 (ja) | 2010-01-29 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
US8950470B2 (en) | 2010-12-30 | 2015-02-10 | Poole Ventura, Inc. | Thermal diffusion chamber control device and method |
US8097085B2 (en) * | 2011-01-28 | 2012-01-17 | Poole Ventura, Inc. | Thermal diffusion chamber |
CN102669198B (zh) * | 2012-06-01 | 2014-05-07 | 甄天瑞 | 自动盘式红外线烘烤机 |
JP6006145B2 (ja) * | 2013-03-01 | 2016-10-12 | 東京エレクトロン株式会社 | 疎水化処理装置、疎水化処理方法及び疎水化処理用記録媒体 |
KR101426202B1 (ko) * | 2013-05-24 | 2014-08-01 | 김민호 | 패드를 가진 정전척 및 그 제조방법 |
JP6385748B2 (ja) * | 2014-07-24 | 2018-09-05 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
US10121683B2 (en) | 2015-08-26 | 2018-11-06 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment method and heat treatment apparatus |
US9741576B2 (en) | 2015-08-26 | 2017-08-22 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method and heat treatment apparatus |
US10727140B2 (en) | 2015-12-30 | 2020-07-28 | Mattson Technology, Inc. | Preheat processes for millisecond anneal system |
JP6757629B2 (ja) * | 2016-08-30 | 2020-09-23 | 東京応化工業株式会社 | 基板加熱装置、基板加熱方法及び赤外線ヒータ |
JP7191504B2 (ja) * | 2017-07-14 | 2022-12-19 | 株式会社Screenホールディングス | 熱処理装置 |
JP2019021828A (ja) * | 2017-07-20 | 2019-02-07 | 株式会社Screenホールディングス | 熱処理装置 |
JP6975596B2 (ja) | 2017-09-20 | 2021-12-01 | 株式会社Screenホールディングス | パーティクル除去方法および熱処理装置 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7179531B2 (ja) * | 2018-08-28 | 2022-11-29 | 株式会社Screenホールディングス | 熱処理方法 |
CN110338674B (zh) * | 2019-07-31 | 2021-07-16 | 宁波方太厨具有限公司 | 一种上加热管结构及具有该结构的烤箱 |
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- 2001-10-29 JP JP2001330230A patent/JP3798674B2/ja not_active Expired - Lifetime
-
2002
- 2002-10-07 US US10/267,127 patent/US20030081945A1/en not_active Abandoned
- 2002-10-14 KR KR10-2002-0062350A patent/KR100480831B1/ko active IP Right Grant
- 2002-10-17 TW TW091123938A patent/TW561528B/zh not_active IP Right Cessation
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2005
- 2005-06-22 US US11/158,985 patent/US7327947B2/en not_active Expired - Lifetime
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101788909B1 (ko) | 2011-03-23 | 2017-10-20 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
US9805932B2 (en) | 2011-03-23 | 2017-10-31 | SCREEN Holdings Co., Ltd. | Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light |
KR101821528B1 (ko) | 2011-03-23 | 2018-01-23 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
US10276385B2 (en) | 2011-03-23 | 2019-04-30 | SCREEN Holdings Co., Ltd. | Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light |
US10879072B2 (en) | 2011-03-23 | 2020-12-29 | SCREEN Holdings Co., Ltd. | Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light |
Also Published As
Publication number | Publication date |
---|---|
JP3798674B2 (ja) | 2006-07-19 |
KR20030035895A (ko) | 2003-05-09 |
TW561528B (en) | 2003-11-11 |
US20030081945A1 (en) | 2003-05-01 |
US7327947B2 (en) | 2008-02-05 |
JP2003133250A (ja) | 2003-05-09 |
US20050274709A1 (en) | 2005-12-15 |
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