JPS57162340A - Annealing method for silicon semiconductor - Google Patents

Annealing method for silicon semiconductor

Info

Publication number
JPS57162340A
JPS57162340A JP4625681A JP4625681A JPS57162340A JP S57162340 A JPS57162340 A JP S57162340A JP 4625681 A JP4625681 A JP 4625681A JP 4625681 A JP4625681 A JP 4625681A JP S57162340 A JPS57162340 A JP S57162340A
Authority
JP
Japan
Prior art keywords
flash
silicon semiconductor
emitting
under
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4625681A
Other languages
Japanese (ja)
Inventor
Tetsuharu Arai
Ryushi Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP4625681A priority Critical patent/JPS57162340A/en
Publication of JPS57162340A publication Critical patent/JPS57162340A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Abstract

PURPOSE:To enable the completion of a preferable annealing with doping efficiency being higher than 45% by maintaining the preliminarily heating temperature, reflectivity, pulse width and emitting energy in a special relationship, thereby emitting flash from a flash discharge lamp. CONSTITUTION:When a silicon semiconductor 6 preliminarily heated in advance to a temperature TA deg.C is annealed by flash emission from a flash discharge lamp 3, under the conditions of maintaining the relationship that (t) falls in the range of 70<=t<=780, where R represents the reflectivity of the silicon semiconductor, (t) microsecond represents the pulse width (1/2 wave amplitude) of the flash light, and E joule/cm<2> represents the emitting intension on the silicon semiconductor and 2.3X10<-3>t<0.27=(1-R)E/(1,410-TA)<=3.8X10<-3>t<0.28> is maintained. For example, a plurality of flash discharge lamps 3 are intimately contacted in zigzag shape in a light source, a plane mirror 4 is disposed on the light source, a specimen base 5 is disposed capable of preliminarily heating with a heater under the mirror in an annealing furnace, and the semiconductor is annealed under the above conditions.
JP4625681A 1981-03-31 1981-03-31 Annealing method for silicon semiconductor Pending JPS57162340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4625681A JPS57162340A (en) 1981-03-31 1981-03-31 Annealing method for silicon semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4625681A JPS57162340A (en) 1981-03-31 1981-03-31 Annealing method for silicon semiconductor

Publications (1)

Publication Number Publication Date
JPS57162340A true JPS57162340A (en) 1982-10-06

Family

ID=12742100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4625681A Pending JPS57162340A (en) 1981-03-31 1981-03-31 Annealing method for silicon semiconductor

Country Status (1)

Country Link
JP (1) JPS57162340A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309629A (en) * 1989-05-24 1990-12-25 Sony Corp Lamp annealing method and lamp annealing device used therefor
US6856762B2 (en) 2002-08-21 2005-02-15 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus
US6859616B2 (en) 2002-12-05 2005-02-22 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of heat treatment by light irradiation
US6885815B2 (en) 2002-07-17 2005-04-26 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus performing irradiating a substrate with light
US6897130B2 (en) 2001-12-13 2005-05-24 Ushio Denki Kabushiki Kaisya Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature
US6936797B2 (en) 2002-06-25 2005-08-30 Dainippon Screen Mfg. Co., Ltd. Thermal processing method and thermal processing apparatus for substrate employing photoirradiation
US6998580B2 (en) 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US7034255B2 (en) 2003-04-16 2006-04-25 Dainippon Screen Mfg., Co. Ltd. Light irradiation type thermal processing apparatus
US7041939B2 (en) 2003-12-01 2006-05-09 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
US7068926B2 (en) 2003-08-26 2006-06-27 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus of light-emission type and method of cleaning same
US7072579B2 (en) 2003-05-21 2006-07-04 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus and method of adjusting light irradiation intensity
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US7230709B2 (en) 2003-06-30 2007-06-12 Dainippon Screen Mfg. Co., Ltd. Measuring method and measuring apparatus of optical energy absorption ratio, and thermal processing apparatus
US7255899B2 (en) * 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate
US7327947B2 (en) 2001-10-29 2008-02-05 Dainippon Screen Mfg. Co., Ltd. Heat treating apparatus and method
WO2008139361A1 (en) * 2007-05-09 2008-11-20 Philips Intellectual Property & Standards Gmbh Method and system for rapid thermal processing
US7935913B2 (en) 2003-09-18 2011-05-03 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for thermal processing of substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS *

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309629A (en) * 1989-05-24 1990-12-25 Sony Corp Lamp annealing method and lamp annealing device used therefor
US7327947B2 (en) 2001-10-29 2008-02-05 Dainippon Screen Mfg. Co., Ltd. Heat treating apparatus and method
US7255899B2 (en) * 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate
CN1294632C (en) * 2001-12-13 2007-01-10 优志旺电机株式会社 Heat treating method for semiconductor crystal wafers
US6897130B2 (en) 2001-12-13 2005-05-24 Ushio Denki Kabushiki Kaisya Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature
US7381928B2 (en) 2002-03-28 2008-06-03 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6998580B2 (en) 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6936797B2 (en) 2002-06-25 2005-08-30 Dainippon Screen Mfg. Co., Ltd. Thermal processing method and thermal processing apparatus for substrate employing photoirradiation
US6885815B2 (en) 2002-07-17 2005-04-26 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus performing irradiating a substrate with light
US6856762B2 (en) 2002-08-21 2005-02-15 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
US6859616B2 (en) 2002-12-05 2005-02-22 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of heat treatment by light irradiation
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US7034255B2 (en) 2003-04-16 2006-04-25 Dainippon Screen Mfg., Co. Ltd. Light irradiation type thermal processing apparatus
US7072579B2 (en) 2003-05-21 2006-07-04 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus and method of adjusting light irradiation intensity
US7230709B2 (en) 2003-06-30 2007-06-12 Dainippon Screen Mfg. Co., Ltd. Measuring method and measuring apparatus of optical energy absorption ratio, and thermal processing apparatus
US7068926B2 (en) 2003-08-26 2006-06-27 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus of light-emission type and method of cleaning same
US7935913B2 (en) 2003-09-18 2011-05-03 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for thermal processing of substrate
US7041939B2 (en) 2003-12-01 2006-05-09 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
WO2008139361A1 (en) * 2007-05-09 2008-11-20 Philips Intellectual Property & Standards Gmbh Method and system for rapid thermal processing

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