KR100315740B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100315740B1
KR100315740B1 KR1019970049100A KR19970049100A KR100315740B1 KR 100315740 B1 KR100315740 B1 KR 100315740B1 KR 1019970049100 A KR1019970049100 A KR 1019970049100A KR 19970049100 A KR19970049100 A KR 19970049100A KR 100315740 B1 KR100315740 B1 KR 100315740B1
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South Korea
Prior art keywords
layer
oxide film
gate electrode
nitrogen
transistor
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Expired - Fee Related
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KR1019970049100A
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English (en)
Korean (ko)
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KR19980086383A (ko
Inventor
슈이치 우에노
시게토 마에가와
요시노리 오쿠무라
시게노부 마에다
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR19980086383A publication Critical patent/KR19980086383A/ko
Application granted granted Critical
Publication of KR100315740B1 publication Critical patent/KR100315740B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H10W10/0127—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers using both n-type and p-type impurities, e.g. for isolation of complementary doped regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019970049100A 1997-05-14 1997-09-26 반도체장치및그제조방법 Expired - Fee Related KR100315740B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP123941 1997-05-14
JP12394197A JP3648015B2 (ja) 1997-05-14 1997-05-14 半導体装置

Publications (2)

Publication Number Publication Date
KR19980086383A KR19980086383A (ko) 1998-12-05
KR100315740B1 true KR100315740B1 (ko) 2002-05-30

Family

ID=14873149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970049100A Expired - Fee Related KR100315740B1 (ko) 1997-05-14 1997-09-26 반도체장치및그제조방법

Country Status (7)

Country Link
US (1) US5998828A (https=)
JP (1) JP3648015B2 (https=)
KR (1) KR100315740B1 (https=)
CN (1) CN100401527C (https=)
DE (1) DE19800089A1 (https=)
FR (1) FR2763425B1 (https=)
TW (1) TW393768B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101050034B1 (ko) * 2006-12-22 2011-07-19 인텔 코오퍼레이션 상이한 도전성 타입 영역들에 유리한 게이트들을 포함하는플로팅 바디 메모리 셀
KR101355282B1 (ko) 2006-02-07 2014-01-27 세이코 인스트루 가부시키가이샤 반도체 장치 및 그 제조 방법

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JP3602679B2 (ja) * 1997-02-26 2004-12-15 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6188101B1 (en) * 1998-01-14 2001-02-13 Advanced Micro Devices, Inc. Flash EPROM cell with reduced short channel effect and method for providing same
JP3769120B2 (ja) * 1998-05-08 2006-04-19 株式会社東芝 半導体素子
US6249841B1 (en) * 1998-12-03 2001-06-19 Ramtron International Corporation Integrated circuit memory device and method incorporating flash and ferroelectric random access memory arrays
JP2001093903A (ja) * 1999-09-24 2001-04-06 Toshiba Corp 半導体装置及びその製造方法
JP3613113B2 (ja) * 2000-01-21 2005-01-26 日本電気株式会社 半導体装置およびその製造方法
US6333244B1 (en) * 2000-01-26 2001-12-25 Advanced Micro Devices, Inc. CMOS fabrication process with differential rapid thermal anneal scheme
JP4823408B2 (ja) 2000-06-08 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6630386B1 (en) 2000-07-18 2003-10-07 Advanced Micro Devices, Inc CMOS manufacturing process with self-amorphized source/drain junctions and extensions
US6521502B1 (en) 2000-08-07 2003-02-18 Advanced Micro Devices, Inc. Solid phase epitaxy activation process for source/drain junction extensions and halo regions
JP2002208645A (ja) * 2001-01-09 2002-07-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6747318B1 (en) * 2001-12-13 2004-06-08 Lsi Logic Corporation Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides
US7314812B2 (en) * 2003-08-28 2008-01-01 Micron Technology, Inc. Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
JP2005101466A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
JP4513497B2 (ja) * 2004-10-19 2010-07-28 ソニー株式会社 固体撮像装置
US7488635B2 (en) * 2005-10-26 2009-02-10 Freescale Semiconductor, Inc. Semiconductor structure with reduced gate doping and methods for forming thereof
KR100742758B1 (ko) * 2005-11-02 2007-07-26 경북대학교 산학협력단 플래시 메모리 소자 및 그 제조방법
US7573095B2 (en) * 2006-12-05 2009-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cells with improved program/erase windows
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
WO2009061834A1 (en) * 2007-11-05 2009-05-14 Contour Semiconductor, Inc. Low-cost, high-density rectifier matrix memory
US8969969B2 (en) * 2009-03-20 2015-03-03 International Business Machines Corporation High threshold voltage NMOS transistors for low power IC technology
JP2012028790A (ja) * 2011-08-19 2012-02-09 Renesas Electronics Corp 半導体装置
CN103107076B (zh) * 2011-11-11 2015-04-29 中芯国际集成电路制造(上海)有限公司 分离栅极式快闪存储器及存储器组的制作方法
CN103377901A (zh) * 2012-04-28 2013-10-30 无锡华润上华科技有限公司 多晶硅栅极的形成方法

Citations (3)

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JPH04157766A (ja) * 1990-10-20 1992-05-29 Sony Corp シリコンゲートｐチャンネルＭＯＳ半導体装置の製造方法
JPH07176743A (ja) * 1993-09-02 1995-07-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0922999A (ja) * 1995-07-07 1997-01-21 Seiko Epson Corp Ｍｉｓ型半導体装置及びその製造方法

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US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
US5514902A (en) * 1993-09-16 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having MOS transistor
JPH07335883A (ja) * 1994-06-15 1995-12-22 Toshiba Corp 半導体装置の製造方法
JPH08139315A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp Ｍｏｓトランジスタ、半導体装置及びそれらの製造方法
US5674788A (en) * 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
US5567638A (en) * 1995-06-14 1996-10-22 National Science Council Method for suppressing boron penetration in PMOS with nitridized polysilicon gate
US5734186A (en) * 1996-09-16 1998-03-31 Delco Electronics Corporation CMOS voltage clamp

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH04157766A (ja) * 1990-10-20 1992-05-29 Sony Corp シリコンゲートｐチャンネルＭＯＳ半導体装置の製造方法
JPH07176743A (ja) * 1993-09-02 1995-07-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0922999A (ja) * 1995-07-07 1997-01-21 Seiko Epson Corp Ｍｉｓ型半導体装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101355282B1 (ko) 2006-02-07 2014-01-27 세이코 인스트루 가부시키가이샤 반도체 장치 및 그 제조 방법
KR101050034B1 (ko) * 2006-12-22 2011-07-19 인텔 코오퍼레이션 상이한 도전성 타입 영역들에 유리한 게이트들을 포함하는플로팅 바디 메모리 셀
US10720434B2 (en) 2006-12-22 2020-07-21 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
US10916547B2 (en) 2006-12-22 2021-02-09 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
US11462540B2 (en) 2006-12-22 2022-10-04 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
US11785759B2 (en) 2006-12-22 2023-10-10 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions

Also Published As

Publication number Publication date
US5998828A (en) 1999-12-07
DE19800089A1 (de) 1998-11-19
CN100401527C (zh) 2008-07-09
TW393768B (en) 2000-06-11
JPH10313098A (ja) 1998-11-24
FR2763425B1 (fr) 2002-01-04
JP3648015B2 (ja) 2005-05-18
FR2763425A1 (fr) 1998-11-20
CN1199248A (zh) 1998-11-18
KR19980086383A (ko) 1998-12-05

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