KR100313233B1 - 유전체 세라믹 조성물 및 적층 세라믹 커패시터 - Google Patents
유전체 세라믹 조성물 및 적층 세라믹 커패시터 Download PDFInfo
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- KR100313233B1 KR100313233B1 KR1020010042795A KR20010042795A KR100313233B1 KR 100313233 B1 KR100313233 B1 KR 100313233B1 KR 1020010042795 A KR1020010042795 A KR 1020010042795A KR 20010042795 A KR20010042795 A KR 20010042795A KR 100313233 B1 KR100313233 B1 KR 100313233B1
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- Prior art keywords
- oxide
- dielectric ceramic
- dielectric
- layer
- ceramic capacitor
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- 239000000919 ceramic Substances 0.000 title claims abstract description 60
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 239000003985 ceramic capacitor Substances 0.000 title claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 9
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 15
- 229910002113 barium titanate Inorganic materials 0.000 claims description 13
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000395 magnesium oxide Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 3
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 3
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims description 3
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 3
- 229910001940 europium oxide Inorganic materials 0.000 claims description 3
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910003451 terbium oxide Inorganic materials 0.000 claims description 3
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 claims description 3
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 2
- 229940075613 gadolinium oxide Drugs 0.000 claims description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- -1 gidolinium oxide Chemical compound 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
BaTiO3의종류 | 불순물 함유량(중량%) | 평균 입경(㎛) | ||||
알칼리금속 산화물 | SrO | CaO | SiO2 | Al2O3 | ||
A | 0.003 | 0.012 | 0.001 | 0.01 | 0.005 | 0.6 |
B | 0.02 | 0.01 | 0.003 | 0.019 | 0.008 | 0.56 |
C | 0.012 | 0.179 | 0.018 | 0.155 | 0.071 | 0.72 |
D | 0.062 | 0.014 | 0.001 | 0.019 | 0.004 | 0.58 |
Claims (4)
- 주성분 및 보조 성분을 포함하는 유전체 세라믹 조성물이며,상기 주성분은 알칼리 금속 산화물의 함유량이 0.02중량% 이하인 티탄산바륨과; 산화스칸듐 또는 산화이트륨중의 적어도 한쪽과; 산화유로퓸, 산화가돌리늄, 산화테르븀 및 산화디스프로슘으로 이루어지는 군에서 선택되는 적어도 한 종과, 지르콘산바륨과, 산화마그네슘과, 산화망간으로 이루어지고,또한 다음 조성식 {BaO}mTiO2+αM2O3+βR2O3+ γBaZrO3+g MgO+h MnO(여기서 M2O3는 Sc2O3또는 Y2O3중의 적어도 한쪽이고, R2O3는 Eu2O3, Gd2O3, Tb2O3및 Dy2O3로 이루어지는 군에서 선택되는 적어도 한 종이고, α, β, γ, g 및 h는 각각 몰비를 나타내며, 다음의 관계식 0.001α0.05, 0.001β0.05, 0.005<γ0.06, 0.001<g0.12, 0.001〈 h0.12, α+ β0.06, g+h0.13, 1.000<m1.035을 만족한다)으로 표현되며,상기 부성분은 산화규소를 상기 주성분 100몰에 대해, SiO2로 환산하여 0.2∼5.0몰 함유하고 있는 것을 특징으로 하는 유전체 세라믹 조성물.
- 복수의 유전체 세라믹층과, 상기 유전체 세라믹층 사이에 형성된 내부전극, 및 상기 내부전극에 전기적으로 접속된 외부전극을 포함하는 적층 세라믹 커패시터이며, 상기 유전체 세라믹층이 상기 청구항 1에 기재된 유전체 세라믹 조성물로 구성되고, 상기 내부전극이 니켈 또는 니켈합금으로 구성되어 있는 것을 특징으로 하는 적층 세라믹 커패시터.
- 제 2항에 있어서, 상기 외부전극은 도전성 금속 분말, 또는 유리 프릿(glass frit)을 첨가한 도전성 금속 분말의 소결층을 포함하는 것을 특징으로 하는 적층 세라믹 커패시터.
- 제 2항 또는 제 3항에 있어서, 상기 외부전극은 도전성 금속 분말, 또는 유리 프릿을 첨가한 도전성 금속 분말의 소결층으로 이루어지는 제 1층과, 그 위에 형성되는 도금층으로 이루어지는 제 2층을 포함하는 것을 특징으로 하는 적층 세라믹 커패시터.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1998-00128625 | 1998-05-12 | ||
JP12862598A JP3334607B2 (ja) | 1998-05-12 | 1998-05-12 | 誘電体磁器組成物および積層セラミックコンデンサ |
KR1019990016956A KR100313234B1 (ko) | 1998-05-12 | 1999-05-12 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
Related Parent Applications (1)
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KR1019990016956A Division KR100313234B1 (ko) | 1998-05-12 | 1999-05-12 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
Publications (2)
Publication Number | Publication Date |
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KR20010090884A KR20010090884A (ko) | 2001-10-19 |
KR100313233B1 true KR100313233B1 (ko) | 2001-11-08 |
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KR1019990016956A KR100313234B1 (ko) | 1998-05-12 | 1999-05-12 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
KR1020010042795A KR100313233B1 (ko) | 1998-05-12 | 2001-07-16 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
KR1020010042794A KR100313232B1 (ko) | 1998-05-12 | 2001-07-16 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
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KR1019990016956A KR100313234B1 (ko) | 1998-05-12 | 1999-05-12 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
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KR1020010042794A KR100313232B1 (ko) | 1998-05-12 | 2001-07-16 | 유전체 세라믹 조성물 및 적층 세라믹 커패시터 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6245433B1 (ko) |
EP (1) | EP0977217B1 (ko) |
JP (1) | JP3334607B2 (ko) |
KR (3) | KR100313234B1 (ko) |
CN (1) | CN1238533A (ko) |
DE (1) | DE69928873T2 (ko) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3334606B2 (ja) * | 1997-07-23 | 2002-10-15 | 株式会社村田製作所 | 誘電体磁器組成物および積層セラミックコンデンサ |
JP3918372B2 (ja) * | 1999-07-26 | 2007-05-23 | 株式会社村田製作所 | 誘電体セラミック組成物、および積層セラミックコンデンサ |
JP2002050536A (ja) * | 2000-07-31 | 2002-02-15 | Murata Mfg Co Ltd | 耐還元性誘電体セラミックおよび積層セラミックコンデンサ |
EP1327616B9 (en) | 2002-01-15 | 2011-04-13 | TDK Corporation | Dielectric ceramic composition and electronic device |
US6716692B1 (en) * | 2003-05-20 | 2004-04-06 | Via Technologies, Inc. | Fabrication process and structure of laminated capacitor |
JP4513278B2 (ja) * | 2003-05-26 | 2010-07-28 | 株式会社村田製作所 | 非還元性誘電体セラミックの製造方法、非還元性誘電体セラミックおよび積層セラミックコンデンサ |
JP4576807B2 (ja) * | 2003-07-14 | 2010-11-10 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
CN100546939C (zh) * | 2005-03-28 | 2009-10-07 | 松下电器产业株式会社 | 电介质陶瓷组合物、以及使用其的电容器的制造方法 |
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1998
- 1998-05-12 JP JP12862598A patent/JP3334607B2/ja not_active Expired - Lifetime
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1999
- 1999-05-12 EP EP99108427A patent/EP0977217B1/en not_active Expired - Lifetime
- 1999-05-12 US US09/310,696 patent/US6245433B1/en not_active Expired - Lifetime
- 1999-05-12 DE DE69928873T patent/DE69928873T2/de not_active Expired - Lifetime
- 1999-05-12 CN CN99107648A patent/CN1238533A/zh active Pending
- 1999-05-12 KR KR1019990016956A patent/KR100313234B1/ko not_active IP Right Cessation
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2001
- 2001-07-16 KR KR1020010042795A patent/KR100313233B1/ko not_active IP Right Cessation
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KR19990088226A (ko) | 1999-12-27 |
EP0977217A1 (en) | 2000-02-02 |
KR20010090884A (ko) | 2001-10-19 |
US6245433B1 (en) | 2001-06-12 |
JP3334607B2 (ja) | 2002-10-15 |
KR20010090883A (ko) | 2001-10-19 |
KR100313234B1 (ko) | 2001-11-05 |
DE69928873T2 (de) | 2006-08-24 |
EP0977217B1 (en) | 2005-12-14 |
JPH11322414A (ja) | 1999-11-24 |
KR100313232B1 (ko) | 2001-11-08 |
CN1238533A (zh) | 1999-12-15 |
DE69928873D1 (de) | 2006-01-19 |
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