KR100309614B1 - Dram셀용저장캐패시터제조방법 - Google Patents

Dram셀용저장캐패시터제조방법 Download PDF

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Publication number
KR100309614B1
KR100309614B1 KR1019950700021A KR19950700021A KR100309614B1 KR 100309614 B1 KR100309614 B1 KR 100309614B1 KR 1019950700021 A KR1019950700021 A KR 1019950700021A KR 19950700021 A KR19950700021 A KR 19950700021A KR 100309614 B1 KR100309614 B1 KR 100309614B1
Authority
KR
South Korea
Prior art keywords
layer
auxiliary layer
sio
dummy
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950700021A
Other languages
English (en)
Korean (ko)
Other versions
KR950702748A (ko
Inventor
볼프강 뢰스너
Original Assignee
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지멘스 악티엔게젤샤프트 filed Critical 지멘스 악티엔게젤샤프트
Publication of KR950702748A publication Critical patent/KR950702748A/ko
Application granted granted Critical
Publication of KR100309614B1 publication Critical patent/KR100309614B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019950700021A 1992-07-08 1993-06-15 Dram셀용저장캐패시터제조방법 Expired - Fee Related KR100309614B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEP4222467.5 1992-07-08
DE4222467A DE4222467C1 (enExample) 1992-07-08 1992-07-08
PCT/DE1993/000516 WO1994001891A1 (de) 1992-07-08 1993-06-15 Verfahren zur herstellung von speicherkondensatoren für dram-zellen

Publications (2)

Publication Number Publication Date
KR950702748A KR950702748A (ko) 1995-07-29
KR100309614B1 true KR100309614B1 (ko) 2002-08-27

Family

ID=6462779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950700021A Expired - Fee Related KR100309614B1 (ko) 1992-07-08 1993-06-15 Dram셀용저장캐패시터제조방법

Country Status (9)

Country Link
US (1) US5496757A (enExample)
EP (1) EP0649566B1 (enExample)
JP (1) JP3330605B2 (enExample)
KR (1) KR100309614B1 (enExample)
AT (1) ATE160652T1 (enExample)
DE (2) DE4222467C1 (enExample)
HK (1) HK1002337A1 (enExample)
TW (1) TW358242B (enExample)
WO (1) WO1994001891A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640273C1 (de) 1996-09-30 1998-03-12 Siemens Ag Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
US6395613B1 (en) 2000-08-30 2002-05-28 Micron Technology, Inc. Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
JP2000077619A (ja) * 1998-08-27 2000-03-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6157067A (en) * 1999-01-04 2000-12-05 International Business Machines Corporation Metal oxide semiconductor capacitor utilizing dummy lithographic patterns
KR100338959B1 (ko) * 2000-08-31 2002-06-01 박종섭 반도체 소자의 커패시터 하부전극 제조방법
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286270A (ja) * 1986-06-05 1987-12-12 Sony Corp 半導体メモリ装置
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
JP2519569B2 (ja) * 1990-04-27 1996-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
DE4213945A1 (de) * 1991-04-29 1992-11-05 Micron Technology Inc Speicherkondensator und verfahren zu dessen herstellung

Also Published As

Publication number Publication date
DE4222467C1 (enExample) 1993-06-24
EP0649566A1 (de) 1995-04-26
HK1002337A1 (en) 1998-08-14
KR950702748A (ko) 1995-07-29
JPH07509346A (ja) 1995-10-12
US5496757A (en) 1996-03-05
WO1994001891A1 (de) 1994-01-20
DE59307748D1 (de) 1998-01-08
TW358242B (en) 1999-05-11
JP3330605B2 (ja) 2002-09-30
ATE160652T1 (de) 1997-12-15
EP0649566B1 (de) 1997-11-26

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