TW358242B - Process for producing storage capacitors for DRAM cells - Google Patents

Process for producing storage capacitors for DRAM cells

Info

Publication number
TW358242B
TW358242B TW082105415A TW82105415A TW358242B TW 358242 B TW358242 B TW 358242B TW 082105415 A TW082105415 A TW 082105415A TW 82105415 A TW82105415 A TW 82105415A TW 358242 B TW358242 B TW 358242B
Authority
TW
Taiwan
Prior art keywords
saving
layer
insulator
sio2
auxiliary layer
Prior art date
Application number
TW082105415A
Other languages
English (en)
Chinese (zh)
Inventor
Wolfgang Rosner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW358242B publication Critical patent/TW358242B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW082105415A 1992-07-08 1993-07-07 Process for producing storage capacitors for DRAM cells TW358242B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4222467A DE4222467C1 (enExample) 1992-07-08 1992-07-08

Publications (1)

Publication Number Publication Date
TW358242B true TW358242B (en) 1999-05-11

Family

ID=6462779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082105415A TW358242B (en) 1992-07-08 1993-07-07 Process for producing storage capacitors for DRAM cells

Country Status (9)

Country Link
US (1) US5496757A (enExample)
EP (1) EP0649566B1 (enExample)
JP (1) JP3330605B2 (enExample)
KR (1) KR100309614B1 (enExample)
AT (1) ATE160652T1 (enExample)
DE (2) DE4222467C1 (enExample)
HK (1) HK1002337A1 (enExample)
TW (1) TW358242B (enExample)
WO (1) WO1994001891A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640273C1 (de) * 1996-09-30 1998-03-12 Siemens Ag Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
US6395613B1 (en) 2000-08-30 2002-05-28 Micron Technology, Inc. Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
JP2000077619A (ja) * 1998-08-27 2000-03-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6157067A (en) 1999-01-04 2000-12-05 International Business Machines Corporation Metal oxide semiconductor capacitor utilizing dummy lithographic patterns
KR100338959B1 (ko) * 2000-08-31 2002-06-01 박종섭 반도체 소자의 커패시터 하부전극 제조방법
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286270A (ja) * 1986-06-05 1987-12-12 Sony Corp 半導体メモリ装置
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
JP2519569B2 (ja) * 1990-04-27 1996-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH0629483A (ja) * 1991-04-29 1994-02-04 Micron Technol Inc スタック型ｉセルキャパシタおよびその製造方法

Also Published As

Publication number Publication date
ATE160652T1 (de) 1997-12-15
KR100309614B1 (ko) 2002-08-27
US5496757A (en) 1996-03-05
HK1002337A1 (en) 1998-08-14
DE4222467C1 (enExample) 1993-06-24
JP3330605B2 (ja) 2002-09-30
EP0649566A1 (de) 1995-04-26
JPH07509346A (ja) 1995-10-12
KR950702748A (ko) 1995-07-29
EP0649566B1 (de) 1997-11-26
DE59307748D1 (de) 1998-01-08
WO1994001891A1 (de) 1994-01-20

Similar Documents

Publication Publication Date Title
JPS5681968A (en) Manufacture of semiconductor device
US5595931A (en) Method for fabricating capacitor of a semiconductor device
TW358242B (en) Process for producing storage capacitors for DRAM cells
KR0186069B1 (ko) 스택형 디램 셀의 캐패시터 제조방법
KR19980055746A (ko) 반도체 소자의 전극 형성방법
TW428317B (en) Method of manufacturing cylindrical shaped capacitor
US6204117B1 (en) Removal of silicon oxynitride on a capacitor electrode for selective hemispherical grain growth
JPS57186354A (en) Semiconductor memory storage and manufacture thereof
GB2106315A (en) >Manufacture of integrated circuits
TW427005B (en) Removal of silicon oxynitride on a capacitor electrode for hemispherical grain growth
KR0147660B1 (ko) 반도체방치의 커패시터 제조방법
US6097054A (en) Semiconductor memory device and method of manufacturing the same
KR100348298B1 (ko) 반도체소자의 커패시터 제조방법
KR100258863B1 (ko) 반도체 메모리 제조방법
TW357428B (en) Mushroom shaped semiconductor circuit capacitor structure and the manufacturing method
KR0161196B1 (ko) 캐패시터의 전하저장 전극 형성 방법
KR100348297B1 (ko) 반도체소자의 커패시터 제조방법
KR100277876B1 (ko) 반도체소자의커패시터제조방법
KR100340855B1 (ko) 캐패시터의전하저장전극형성방법
KR100646930B1 (ko) 반도체 소자의 캐패시터 형성 방법
KR100324812B1 (ko) 반도체기억장치제조방법
KR960008526B1 (en) Manufacturing method of capacitor
KR20010038145A (ko) 컨캐이브형의 캐패시터 하부전극 형성방법
TW367617B (en) Manufacturing method for capacitors of DRAM
TW234777B (en) Stacked DRAM

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees