ATE160652T1 - Verfahren zur herstellung von speicherkondensatoren für dram-zellen - Google Patents
Verfahren zur herstellung von speicherkondensatoren für dram-zellenInfo
- Publication number
- ATE160652T1 ATE160652T1 AT93912589T AT93912589T ATE160652T1 AT E160652 T1 ATE160652 T1 AT E160652T1 AT 93912589 T AT93912589 T AT 93912589T AT 93912589 T AT93912589 T AT 93912589T AT E160652 T1 ATE160652 T1 AT E160652T1
- Authority
- AT
- Austria
- Prior art keywords
- dummies
- pct
- storage
- dram cells
- storage capacitors
- Prior art date
Links
- 238000003860 storage Methods 0.000 title abstract 5
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4222467A DE4222467C1 (enExample) | 1992-07-08 | 1992-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE160652T1 true ATE160652T1 (de) | 1997-12-15 |
Family
ID=6462779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT93912589T ATE160652T1 (de) | 1992-07-08 | 1993-06-15 | Verfahren zur herstellung von speicherkondensatoren für dram-zellen |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5496757A (enExample) |
| EP (1) | EP0649566B1 (enExample) |
| JP (1) | JP3330605B2 (enExample) |
| KR (1) | KR100309614B1 (enExample) |
| AT (1) | ATE160652T1 (enExample) |
| DE (2) | DE4222467C1 (enExample) |
| HK (1) | HK1002337A1 (enExample) |
| TW (1) | TW358242B (enExample) |
| WO (1) | WO1994001891A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19640273C1 (de) * | 1996-09-30 | 1998-03-12 | Siemens Ag | Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen |
| US5998256A (en) | 1996-11-01 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry |
| US6395613B1 (en) | 2000-08-30 | 2002-05-28 | Micron Technology, Inc. | Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts |
| KR100227070B1 (ko) * | 1996-11-04 | 1999-10-15 | 구본준 | 커패시터 및 그의 제조방법 |
| US6590250B2 (en) | 1997-11-25 | 2003-07-08 | Micron Technology, Inc. | DRAM capacitor array and integrated device array of substantially identically shaped devices |
| JP2000077619A (ja) * | 1998-08-27 | 2000-03-14 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US6157067A (en) | 1999-01-04 | 2000-12-05 | International Business Machines Corporation | Metal oxide semiconductor capacitor utilizing dummy lithographic patterns |
| KR100338959B1 (ko) * | 2000-08-31 | 2002-06-01 | 박종섭 | 반도체 소자의 커패시터 하부전극 제조방법 |
| KR100502410B1 (ko) * | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
| US7468323B2 (en) * | 2004-02-27 | 2008-12-23 | Micron Technology, Inc. | Method of forming high aspect ratio structures |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62286270A (ja) * | 1986-06-05 | 1987-12-12 | Sony Corp | 半導体メモリ装置 |
| IT1245495B (it) * | 1990-01-26 | 1994-09-27 | Mitsubishi Electric Corp | Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa |
| DD299990A5 (de) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung |
| JP2519569B2 (ja) * | 1990-04-27 | 1996-07-31 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| JPH0629483A (ja) * | 1991-04-29 | 1994-02-04 | Micron Technol Inc | スタック型ｉセルキャパシタおよびその製造方法 |
-
1992
- 1992-07-08 DE DE4222467A patent/DE4222467C1/de not_active Expired - Fee Related
-
1993
- 1993-06-15 US US08/351,464 patent/US5496757A/en not_active Expired - Lifetime
- 1993-06-15 DE DE59307748T patent/DE59307748D1/de not_active Expired - Fee Related
- 1993-06-15 EP EP93912589A patent/EP0649566B1/de not_active Expired - Lifetime
- 1993-06-15 KR KR1019950700021A patent/KR100309614B1/ko not_active Expired - Fee Related
- 1993-06-15 WO PCT/DE1993/000516 patent/WO1994001891A1/de not_active Ceased
- 1993-06-15 JP JP50280694A patent/JP3330605B2/ja not_active Expired - Fee Related
- 1993-06-15 AT AT93912589T patent/ATE160652T1/de not_active IP Right Cessation
- 1993-06-15 HK HK98101321A patent/HK1002337A1/xx not_active IP Right Cessation
- 1993-07-07 TW TW082105415A patent/TW358242B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100309614B1 (ko) | 2002-08-27 |
| US5496757A (en) | 1996-03-05 |
| HK1002337A1 (en) | 1998-08-14 |
| DE4222467C1 (enExample) | 1993-06-24 |
| JP3330605B2 (ja) | 2002-09-30 |
| EP0649566A1 (de) | 1995-04-26 |
| JPH07509346A (ja) | 1995-10-12 |
| KR950702748A (ko) | 1995-07-29 |
| TW358242B (en) | 1999-05-11 |
| EP0649566B1 (de) | 1997-11-26 |
| DE59307748D1 (de) | 1998-01-08 |
| WO1994001891A1 (de) | 1994-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |