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A high capacitance storage node structure is created in a substrate by patterning a hybrid resist to produce both negative tone and positive tone areas in the exposed region. After removal of the positive tone areas, the substrate is etched using the unexposed hybrid resist and negative tone area as a mask. This produces a trench in the substrate with a centrally located, upwardly projecting protrusion. The capacitor is then created by coating the sidewalls of the trench and protrusion with dielectric and filling the trench with conductive material such as polysilicon.
TW086117567A1997-02-031997-11-24Fabrication method for high-capacitance storage node structures
TW362282B
(en)