KR970009102B1 - Capacitor manufacturing method for mosfet - Google Patents

Capacitor manufacturing method for mosfet Download PDF

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Publication number
KR970009102B1
KR970009102B1 KR93015802A KR930015802A KR970009102B1 KR 970009102 B1 KR970009102 B1 KR 970009102B1 KR 93015802 A KR93015802 A KR 93015802A KR 930015802 A KR930015802 A KR 930015802A KR 970009102 B1 KR970009102 B1 KR 970009102B1
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KR
South Korea
Prior art keywords
layer
storage node
forming
sog
mosfet
Prior art date
Application number
KR93015802A
Other languages
Korean (ko)
Inventor
Man-Joon Kim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93015802A priority Critical patent/KR970009102B1/en
Application granted granted Critical
Publication of KR970009102B1 publication Critical patent/KR970009102B1/en

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Abstract

A fabrication method of capacitor suitable for high density MOSFET using multi-layer capacitor is disclosed. The method comprises the steps of: forming a first polysilicon storage node(15a) and depositing SOG(spin on glass) layer(20) for flattening; forming a second polysilicon storage node(15b) on the semi-finished structure; forming multi-layer storage node(15) by etching the second storage node(15b), the SOG layer(20) and the first storage node(15a) and removing the exposed SOG layer(20); and forming a dielectric layer(17) of N-O or O-N-O structure and forming plate polysilicon electrode(18). Thereby, it is possible to increase the capacitance using the multi-layer storage node pattern.
KR93015802A 1993-08-16 1993-08-16 Capacitor manufacturing method for mosfet KR970009102B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93015802A KR970009102B1 (en) 1993-08-16 1993-08-16 Capacitor manufacturing method for mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93015802A KR970009102B1 (en) 1993-08-16 1993-08-16 Capacitor manufacturing method for mosfet

Publications (1)

Publication Number Publication Date
KR970009102B1 true KR970009102B1 (en) 1997-06-05

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ID=19361310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93015802A KR970009102B1 (en) 1993-08-16 1993-08-16 Capacitor manufacturing method for mosfet

Country Status (1)

Country Link
KR (1) KR970009102B1 (en)

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