TW374241B - Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer - Google Patents
Method for manufacturing a capacitor by using a silicon oxynitride etching stop layerInfo
- Publication number
- TW374241B TW374241B TW086116007A TW86116007A TW374241B TW 374241 B TW374241 B TW 374241B TW 086116007 A TW086116007 A TW 086116007A TW 86116007 A TW86116007 A TW 86116007A TW 374241 B TW374241 B TW 374241B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- silicon oxynitride
- manufacturing
- stop layer
- layer
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
A silicon oxynitride layer is formed on a first conductive layer; photolithography and etching process are used to define a first storage electrode of a capacitor; hemispherical grained silicon is formed on the sidewall of said first storage electrode and on the silicon oxynitride layer; and hemispherical grained silicon is etched by using anisotropic etching and the remaining hemispherical grained silicon remains on the sidewall of the capacitor's first storage electrode; and then the silicon oxynitride layer is removed. Next, a dielectric layer is deposited on the surface of hemispherical grained silicon along a first conductive layer to serve as a dielectric layer of a capacitor. Finally a second conductive layer is formed on said dielectric layer of a capacitor to serve as a second storage electrode of a capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116007A TW374241B (en) | 1997-10-28 | 1997-10-28 | Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116007A TW374241B (en) | 1997-10-28 | 1997-10-28 | Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW374241B true TW374241B (en) | 1999-11-11 |
Family
ID=57941826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116007A TW374241B (en) | 1997-10-28 | 1997-10-28 | Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW374241B (en) |
-
1997
- 1997-10-28 TW TW086116007A patent/TW374241B/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW353792B (en) | A capacitor and method for making a capacitor | |
EP0901159A3 (en) | Dram cell capacitor and method for manufacturing the same | |
EP0836224A3 (en) | Method of manufacturing a high capacitance capacitor using sputtering | |
EP0304077A3 (en) | Method of forming a fine pattern | |
EP1063698A3 (en) | Method of forming a dram bit line contact | |
TW374241B (en) | Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer | |
EP0905778A3 (en) | Improved multi-level conductive structure and methods therefor | |
JPS6472551A (en) | Manufacture of trench capacitor | |
TW367616B (en) | Manufacturing method for cylindrical capacitor | |
EP0875925A3 (en) | Method of manufacturing capacitors in integrated circuits | |
TW364205B (en) | Method for producing DRAM capacitor | |
KR940010316A (en) | Method of manufacturing charge storage electrode | |
TW377464B (en) | Method of increasing the surface area of capacitor construct | |
TW343373B (en) | Process for producing a semiconductor component | |
TW328634B (en) | The structure and manufacturing method for capacitor of DRAM | |
TW353779B (en) | Method of producing semiconductor capacitor and structure thereof | |
JPS6439040A (en) | Formation of contact hole | |
KR960008574B1 (en) | Manufacture method of stack capacitor | |
KR960008526B1 (en) | Manufacturing method of capacitor | |
TW333682B (en) | The method for producing multi-crown capacitor of DRAM memory cell | |
KR930003356A (en) | Trench Capacitor Manufacturing Method | |
KR970011665B1 (en) | Method of capacitor fabrication in semiconductor | |
TW262572B (en) | A process of preventing integrated circuit from generating defects | |
TW362283B (en) | Method of increasing the static electrical capacity of DRAM cells | |
TW349256B (en) | Process for producing stack capacitor having horizontal finger grooves |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |