TW374241B - Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer - Google Patents

Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer

Info

Publication number
TW374241B
TW374241B TW086116007A TW86116007A TW374241B TW 374241 B TW374241 B TW 374241B TW 086116007 A TW086116007 A TW 086116007A TW 86116007 A TW86116007 A TW 86116007A TW 374241 B TW374241 B TW 374241B
Authority
TW
Taiwan
Prior art keywords
capacitor
silicon oxynitride
manufacturing
stop layer
layer
Prior art date
Application number
TW086116007A
Other languages
Chinese (zh)
Inventor
Li-Ye Chen
Jin-Dong Chen
xiang-yuan Zheng
Ing-Ruey Liaw
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW086116007A priority Critical patent/TW374241B/en
Application granted granted Critical
Publication of TW374241B publication Critical patent/TW374241B/en

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

A silicon oxynitride layer is formed on a first conductive layer; photolithography and etching process are used to define a first storage electrode of a capacitor; hemispherical grained silicon is formed on the sidewall of said first storage electrode and on the silicon oxynitride layer; and hemispherical grained silicon is etched by using anisotropic etching and the remaining hemispherical grained silicon remains on the sidewall of the capacitor's first storage electrode; and then the silicon oxynitride layer is removed. Next, a dielectric layer is deposited on the surface of hemispherical grained silicon along a first conductive layer to serve as a dielectric layer of a capacitor. Finally a second conductive layer is formed on said dielectric layer of a capacitor to serve as a second storage electrode of a capacitor.
TW086116007A 1997-10-28 1997-10-28 Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer TW374241B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086116007A TW374241B (en) 1997-10-28 1997-10-28 Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086116007A TW374241B (en) 1997-10-28 1997-10-28 Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer

Publications (1)

Publication Number Publication Date
TW374241B true TW374241B (en) 1999-11-11

Family

ID=57941826

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116007A TW374241B (en) 1997-10-28 1997-10-28 Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer

Country Status (1)

Country Link
TW (1) TW374241B (en)

Similar Documents

Publication Publication Date Title
TW353792B (en) A capacitor and method for making a capacitor
EP0901159A3 (en) Dram cell capacitor and method for manufacturing the same
EP0836224A3 (en) Method of manufacturing a high capacitance capacitor using sputtering
EP0304077A3 (en) Method of forming a fine pattern
EP1063698A3 (en) Method of forming a dram bit line contact
TW374241B (en) Method for manufacturing a capacitor by using a silicon oxynitride etching stop layer
EP0905778A3 (en) Improved multi-level conductive structure and methods therefor
JPS6472551A (en) Manufacture of trench capacitor
TW367616B (en) Manufacturing method for cylindrical capacitor
EP0875925A3 (en) Method of manufacturing capacitors in integrated circuits
TW364205B (en) Method for producing DRAM capacitor
KR940010316A (en) Method of manufacturing charge storage electrode
TW377464B (en) Method of increasing the surface area of capacitor construct
TW343373B (en) Process for producing a semiconductor component
TW328634B (en) The structure and manufacturing method for capacitor of DRAM
TW353779B (en) Method of producing semiconductor capacitor and structure thereof
JPS6439040A (en) Formation of contact hole
KR960008574B1 (en) Manufacture method of stack capacitor
KR960008526B1 (en) Manufacturing method of capacitor
TW333682B (en) The method for producing multi-crown capacitor of DRAM memory cell
KR930003356A (en) Trench Capacitor Manufacturing Method
KR970011665B1 (en) Method of capacitor fabrication in semiconductor
TW262572B (en) A process of preventing integrated circuit from generating defects
TW362283B (en) Method of increasing the static electrical capacity of DRAM cells
TW349256B (en) Process for producing stack capacitor having horizontal finger grooves

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent