KR0186061B1 - 땜납 돌출전극 제조방법과 상호연결시스템 - Google Patents

땜납 돌출전극 제조방법과 상호연결시스템 Download PDF

Info

Publication number
KR0186061B1
KR0186061B1 KR1019940700820A KR19940700820A KR0186061B1 KR 0186061 B1 KR0186061 B1 KR 0186061B1 KR 1019940700820 A KR1019940700820 A KR 1019940700820A KR 19940700820 A KR19940700820 A KR 19940700820A KR 0186061 B1 KR0186061 B1 KR 0186061B1
Authority
KR
South Korea
Prior art keywords
solder
protruding electrode
electrode
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940700820A
Other languages
English (en)
Korean (ko)
Other versions
KR940702644A (ko
Inventor
에드워드 케이 영
Original Assignee
엘. 커티스 머캐스킬, 쥬니어
엠씨엔씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘. 커티스 머캐스킬, 쥬니어, 엠씨엔씨 filed Critical 엘. 커티스 머캐스킬, 쥬니어
Publication of KR940702644A publication Critical patent/KR940702644A/ko
Application granted granted Critical
Publication of KR0186061B1 publication Critical patent/KR0186061B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/036—Manufacturing methods by patterning a pre-deposited material
    • H01L2224/0361—Physical or chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/03912—Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/11502—Pre-existing or pre-deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452—Solder masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Ceramic Products (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Arc Welding In General (AREA)
KR1019940700820A 1991-09-13 1992-09-11 땜납 돌출전극 제조방법과 상호연결시스템 Expired - Fee Related KR0186061B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/759,450 US5162257A (en) 1991-09-13 1991-09-13 Solder bump fabrication method
US759,450 1991-09-13
PCT/US1992/007722 WO1993006620A1 (en) 1991-09-13 1992-09-11 Solder bump fabrication method and solder bumps formed thereby

Publications (2)

Publication Number Publication Date
KR940702644A KR940702644A (ko) 1994-08-20
KR0186061B1 true KR0186061B1 (ko) 1999-04-15

Family

ID=25055684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940700820A Expired - Fee Related KR0186061B1 (ko) 1991-09-13 1992-09-11 땜납 돌출전극 제조방법과 상호연결시스템

Country Status (10)

Country Link
US (2) US5162257A (enExample)
EP (1) EP0603296B1 (enExample)
JP (1) JP2842692B2 (enExample)
KR (1) KR0186061B1 (enExample)
AT (1) ATE156935T1 (enExample)
CA (1) CA2116766C (enExample)
DE (1) DE69221627T2 (enExample)
ES (1) ES2106194T3 (enExample)
TW (1) TW200417B (enExample)
WO (1) WO1993006620A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250061993A (ko) 2023-10-30 2025-05-08 가톨릭대학교 산학협력단 재난 대응 하·폐수 처리시설의 자산관리방법

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950001962A (ko) * 1993-06-30 1995-01-04 김광호 반도체 칩 범프
US5366140A (en) * 1993-09-30 1994-11-22 Minnesota Mining And Manufacturing Company Patterned array of uniform metal microbeads
US5442852A (en) * 1993-10-26 1995-08-22 Pacific Microelectronics Corporation Method of fabricating solder ball array
US5396702A (en) * 1993-12-15 1995-03-14 At&T Corp. Method for forming solder bumps on a substrate using an electrodeposition technique
US5532550A (en) * 1993-12-30 1996-07-02 Adler; Robert Organic based led display matrix
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US5470787A (en) * 1994-05-02 1995-11-28 Motorola, Inc. Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same
US5503286A (en) * 1994-06-28 1996-04-02 International Business Machines Corporation Electroplated solder terminal
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
TW253856B (en) * 1994-12-13 1995-08-11 At & T Corp Method of solder bonding, and article produced by the method
WO1996030933A2 (en) * 1995-03-20 1996-10-03 Mcnc Solder bump fabrication methods and structure including a titanium barrier layer
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
WO1996031905A1 (en) * 1995-04-05 1996-10-10 Mcnc A solder bump structure for a microelectronic substrate
US5620131A (en) * 1995-06-15 1997-04-15 Lucent Technologies Inc. Method of solder bonding
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
KR100438256B1 (ko) * 1995-12-18 2004-08-25 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
US5736456A (en) * 1996-03-07 1998-04-07 Micron Technology, Inc. Method of forming conductive bumps on die for flip chip applications
US5851911A (en) 1996-03-07 1998-12-22 Micron Technology, Inc. Mask repattern process
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5903058A (en) * 1996-07-17 1999-05-11 Micron Technology, Inc. Conductive bumps on die for flip chip application
JP3413020B2 (ja) * 1996-07-17 2003-06-03 株式会社東芝 半導体装置の製造方法
US5902686A (en) * 1996-11-21 1999-05-11 Mcnc Methods for forming an intermetallic region between a solder bump and an under bump metallurgy layer and related structures
JP3553300B2 (ja) * 1996-12-02 2004-08-11 富士通株式会社 半導体装置の製造方法及び半導体装置の実装方法
US6045030A (en) * 1997-03-13 2000-04-04 Raytheon Company Sealing electronic packages containing bumped hybrids
US6117299A (en) * 1997-05-09 2000-09-12 Mcnc Methods of electroplating solder bumps of uniform height on integrated circuit substrates
US5926731A (en) * 1997-07-02 1999-07-20 Delco Electronics Corp. Method for controlling solder bump shape and stand-off height
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
US5962151A (en) * 1997-12-05 1999-10-05 Delco Electronics Corp. Method for controlling solderability of a conductor and conductor formed thereby
US5937320A (en) * 1998-04-08 1999-08-10 International Business Machines Corporation Barrier layers for electroplated SnPb eutectic solder joints
US6595408B1 (en) 1998-10-07 2003-07-22 Micron Technology, Inc. Method of attaching solder balls to BGA package utilizing a tool to pick and dip the solder ball in flux prior to placement
US6268275B1 (en) * 1998-10-08 2001-07-31 Micron Technology, Inc. Method of locating conductive spheres utilizing screen and hopper of solder balls
US6139972A (en) * 1998-10-26 2000-10-31 Agilent Technologies Inc. Solder paste containment device
JP3667184B2 (ja) * 1999-02-26 2005-07-06 住友ベークライト株式会社 半導体装置
JP3287328B2 (ja) * 1999-03-09 2002-06-04 日本電気株式会社 半導体装置及び半導体装置の製造方法
US6649533B1 (en) * 1999-05-05 2003-11-18 Advanced Micro Devices, Inc. Method and apparatus for forming an under bump metallurgy layer
US6332988B1 (en) 1999-06-02 2001-12-25 International Business Machines Corporation Rework process
US6544880B1 (en) * 1999-06-14 2003-04-08 Micron Technology, Inc. Method of improving copper interconnects of semiconductor devices for bonding
US6570251B1 (en) * 1999-09-02 2003-05-27 Micron Technology, Inc. Under bump metalization pad and solder bump connections
KR100319813B1 (ko) 2000-01-03 2002-01-09 윤종용 유비엠 언더컷을 개선한 솔더 범프의 형성 방법
US6387793B1 (en) 2000-03-09 2002-05-14 Hrl Laboratories, Llc Method for manufacturing precision electroplated solder bumps
US6437669B1 (en) * 2000-09-29 2002-08-20 Applied Micro Circuits Corporation Microwave to millimeter wave frequency substrate interface
WO2002039802A2 (en) * 2000-11-10 2002-05-16 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US6884313B2 (en) * 2001-01-08 2005-04-26 Fujitsu Limited Method and system for joining and an ultra-high density interconnect
US6793792B2 (en) * 2001-01-12 2004-09-21 Unitive International Limited Curaco Electroplating methods including maintaining a determined electroplating voltage and related systems
JP4656275B2 (ja) * 2001-01-15 2011-03-23 日本電気株式会社 半導体装置の製造方法
US6419148B1 (en) 2001-01-23 2002-07-16 Orbotech Ltd. System for forming bumps on wafers
US6762122B2 (en) * 2001-09-27 2004-07-13 Unitivie International Limited Methods of forming metallurgy structures for wire and solder bonding
TW536766B (en) * 2002-02-19 2003-06-11 Advanced Semiconductor Eng Bump process
TW521359B (en) * 2002-02-20 2003-02-21 Advanced Semiconductor Eng Bump fabrication process
TWI239578B (en) * 2002-02-21 2005-09-11 Advanced Semiconductor Eng Manufacturing process of bump
US7531898B2 (en) 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
WO2004001837A2 (en) 2002-06-25 2003-12-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US6987307B2 (en) * 2002-06-26 2006-01-17 Georgia Tech Research Corporation Stand-alone organic-based passive devices
US6900708B2 (en) * 2002-06-26 2005-05-31 Georgia Tech Research Corporation Integrated passive devices fabricated utilizing multi-layer, organic laminates
US7260890B2 (en) * 2002-06-26 2007-08-28 Georgia Tech Research Corporation Methods for fabricating three-dimensional all organic interconnect structures
US6780751B2 (en) 2002-10-09 2004-08-24 Freescale Semiconductor, Inc. Method for eliminating voiding in plated solder
US7495326B2 (en) 2002-10-22 2009-02-24 Unitive International Limited Stacked electronic structures including offset substrates
US6897141B2 (en) * 2002-10-23 2005-05-24 Ocube Digital Co., Ltd. Solder terminal and fabricating method thereof
US6796482B2 (en) * 2002-10-31 2004-09-28 Freescale Semiconductor, Inc. Phase separated system for fluxing
DE10301934A1 (de) * 2003-01-20 2004-07-29 Epcos Ag Elektrisches Bauelement mit verringerter Substratfläche
TWI225899B (en) 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7489914B2 (en) * 2003-03-28 2009-02-10 Georgia Tech Research Corporation Multi-band RF transceiver with passive reuse in organic substrates
TWI223882B (en) * 2003-06-30 2004-11-11 Advanced Semiconductor Eng Bumping process
TWI221334B (en) * 2003-06-30 2004-09-21 Advanced Semiconductor Eng Bumping process
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
US7049216B2 (en) 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
US7427557B2 (en) * 2004-03-10 2008-09-23 Unitive International Limited Methods of forming bumps using barrier layers as etch masks
US7410833B2 (en) * 2004-03-31 2008-08-12 International Business Machines Corporation Interconnections for flip-chip using lead-free solders and having reaction barrier layers
TW200603698A (en) 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US8345433B2 (en) * 2004-07-08 2013-01-01 Avx Corporation Heterogeneous organic laminate stack ups for high frequency applications
JP2006032851A (ja) * 2004-07-21 2006-02-02 Mitsui Mining & Smelting Co Ltd 被覆銅、ホイスカの発生抑制方法、プリント配線基板および半導体装置
US7252514B2 (en) * 2004-09-02 2007-08-07 International Business Machines Corporation High density space transformer and method of fabricating same
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7439840B2 (en) 2006-06-27 2008-10-21 Jacket Micro Devices, Inc. Methods and apparatuses for high-performing multi-layer inductors
US7808434B2 (en) * 2006-08-09 2010-10-05 Avx Corporation Systems and methods for integrated antennae structures in multilayer organic-based printed circuit devices
JP2010501116A (ja) * 2006-08-17 2010-01-14 エヌエックスピー ビー ヴィ エッチングステップ中の電極の適正なアンダーカットの試験方法
US7989895B2 (en) * 2006-11-15 2011-08-02 Avx Corporation Integration using package stacking with multi-layer organic substrates
US7569164B2 (en) * 2007-01-29 2009-08-04 Harima Chemicals, Inc. Solder precoating method
CN101234455B (zh) * 2007-01-30 2012-03-28 播磨化成株式会社 焊锡膏组合物及焊锡预涂法
EP1952935B1 (en) * 2007-02-01 2016-05-11 Harima Chemicals, Inc. Solder paste composition and solder precoating method
US7713860B2 (en) * 2007-10-13 2010-05-11 Wan-Ling Yu Method of forming metallic bump on I/O pad
TWI446843B (zh) * 2007-12-11 2014-07-21 Unimicron Technology Corp 線路板及其製程
US7888259B2 (en) * 2008-08-19 2011-02-15 Ati Technologies Ulc Integrated circuit package employing predetermined three-dimensional solder pad surface and method for making same
KR101022942B1 (ko) * 2008-11-12 2011-03-16 삼성전기주식회사 흐름 방지용 댐을 구비한 인쇄회로기판 및 그 제조방법
US9142520B2 (en) * 2011-08-30 2015-09-22 Ati Technologies Ulc Methods of fabricating semiconductor chip solder structures
KR101774938B1 (ko) 2011-08-31 2017-09-06 삼성전자 주식회사 지지대를 갖는 반도체 패키지 및 그 형성 방법
US8946891B1 (en) * 2012-09-04 2015-02-03 Amkor Technology, Inc. Mushroom shaped bump on repassivation
US20150195912A1 (en) 2014-01-08 2015-07-09 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Substrates With Ultra Fine Pitch Flip Chip Bumps
US9949378B2 (en) 2014-04-14 2018-04-17 Presidio Components, Inc. Electrical devices with solder dam
FR3050865B1 (fr) * 2016-05-02 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'interconnexions conductrices sur un substrat et interconnexions ainsi obtenues
US11676932B2 (en) * 2019-12-31 2023-06-13 Micron Technology, Inc. Semiconductor interconnect structures with narrowed portions, and associated systems and methods

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986255A (en) * 1974-11-29 1976-10-19 Itek Corporation Process for electrically interconnecting chips with substrates employing gold alloy bumps and magnetic materials therein
JPS54128669A (en) * 1978-03-29 1979-10-05 Nippon Denso Co Ltd Flip chip element
US4273859A (en) * 1979-12-31 1981-06-16 Honeywell Information Systems Inc. Method of forming solder bump terminals on semiconductor elements
WO1987000686A1 (fr) * 1985-07-16 1987-01-29 Nippon Telegraph And Telephone Corporation Bornes de connection entre des substrats et procede de production
FR2588121B1 (fr) * 1985-10-02 1990-02-23 Bull Sa Procede et dispositif de soudage d'elements sur les plots correspondants d'une plaquette telle que notamment une plaquette de circuits integres de haute densite
US4878611A (en) * 1986-05-30 1989-11-07 American Telephone And Telegraph Company, At&T Bell Laboratories Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate
US4763829A (en) * 1986-06-04 1988-08-16 American Telephone And Telegraph Company, At&T Bell Laboratories Soldering of electronic components
EP0263222B1 (en) * 1986-10-08 1992-03-25 International Business Machines Corporation Method of forming solder terminals for a pinless ceramic module
US4752027A (en) * 1987-02-20 1988-06-21 Hewlett-Packard Company Method and apparatus for solder bumping of printed circuit boards
JP2544396B2 (ja) * 1987-08-25 1996-10-16 株式会社日立製作所 半導体集積回路装置の製造方法
JP2633586B2 (ja) * 1987-10-21 1997-07-23 株式会社東芝 バンプ構造を有する半導体装置
US4817850A (en) * 1988-03-28 1989-04-04 Hughes Aircraft Company Repairable flip-chip bumping
US4893403A (en) * 1988-04-15 1990-01-16 Hewlett-Packard Company Chip alignment method
US4840302A (en) * 1988-04-15 1989-06-20 International Business Machines Corporation Chromium-titanium alloy
US4950623A (en) * 1988-08-02 1990-08-21 Microelectronics Center Of North Carolina Method of building solder bumps
US5024372A (en) * 1989-01-03 1991-06-18 Motorola, Inc. Method of making high density solder bumps and a substrate socket for high density solder bumps
US4940181A (en) * 1989-04-06 1990-07-10 Motorola, Inc. Pad grid array for receiving a solder bumped chip carrier
US5154341A (en) * 1990-12-06 1992-10-13 Motorola Inc. Noncollapsing multisolder interconnection
US5152451A (en) * 1991-04-01 1992-10-06 Motorola, Inc. Controlled solder oxidation process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250061993A (ko) 2023-10-30 2025-05-08 가톨릭대학교 산학협력단 재난 대응 하·폐수 처리시설의 자산관리방법

Also Published As

Publication number Publication date
JPH07502147A (ja) 1995-03-02
ES2106194T3 (es) 1997-11-01
CA2116766C (en) 1999-02-16
TW200417B (enExample) 1993-02-21
DE69221627D1 (de) 1997-09-18
CA2116766A1 (en) 1993-04-01
KR940702644A (ko) 1994-08-20
ATE156935T1 (de) 1997-08-15
WO1993006620A1 (en) 1993-04-01
US5162257A (en) 1992-11-10
US5293006A (en) 1994-03-08
JP2842692B2 (ja) 1999-01-06
EP0603296A1 (en) 1994-06-29
DE69221627T2 (de) 1998-01-08
EP0603296B1 (en) 1997-08-13

Similar Documents

Publication Publication Date Title
KR0186061B1 (ko) 땜납 돌출전극 제조방법과 상호연결시스템
CN1186801C (zh) 在电镀的控制熔塌芯片连接焊料突头存在下改进的钛钨合金腐蚀方法
CN1096110C (zh) 含有钛阻挡层的焊料凸点结构及其形成方法
KR100339190B1 (ko) 씨4 범프 형성 방법 및 상호 접속 구조
US6790759B1 (en) Semiconductor device with strain relieving bump design
EP1032030B1 (en) Flip chip bump bonding
US7170170B2 (en) Bump for semiconductor package, semiconductor package applying the bump, and method for fabricating the semiconductor package
KR101037287B1 (ko) 도금된 솔더의 보이딩 제거 방법
US20060223313A1 (en) Copper interconnect post for connecting a semiconductor chip to a substrate and method of fabricating the same
KR20010098699A (ko) 납 없는 범프 배선의 형성 방법
US20080142968A1 (en) Structure for controlled collapse chip connection with a captured pad geometry
JP2000133667A (ja) 突起電極の形成方法
CN100459082C (zh) 铅锡合金凸点制作方法
KR20020060307A (ko) 솔더 범프의 형성 방법
JPS6112047A (ja) 半導体装置の製造方法
Yu et al. Solder bump fabrication by electroplating for flip-chip applications
US20080119056A1 (en) Method for improved copper layer etching of wafers with c4 connection structures
JP2009231682A (ja) 半導体装置およびその製造方法
CN210640233U (zh) 半导体结构
JP3335883B2 (ja) バンプ電極の製造方法
Datta Flip-chip interconnection
KR100694428B1 (ko) 반도체칩의 하부 범프 금속화층 구조 및 그 제조 방법
JPH09191012A (ja) はんだバンプの形成方法
Xiao et al. Study on failure mode of solder bump fabricated using eutectic solder electroplating process
HK1036523B (en) Solder bump fabrication methods and structure including a titanium barrier layer

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20061220

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20071230

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20071230

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000