FR3050865B1 - Procede de realisation d'interconnexions conductrices sur un substrat et interconnexions ainsi obtenues - Google Patents

Procede de realisation d'interconnexions conductrices sur un substrat et interconnexions ainsi obtenues Download PDF

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Publication number
FR3050865B1
FR3050865B1 FR1653947A FR1653947A FR3050865B1 FR 3050865 B1 FR3050865 B1 FR 3050865B1 FR 1653947 A FR1653947 A FR 1653947A FR 1653947 A FR1653947 A FR 1653947A FR 3050865 B1 FR3050865 B1 FR 3050865B1
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Prior art keywords
interconnections
substrate
producing conductive
conductive interconnections
producing
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FR3050865A1 (fr
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Franck Bana
Laurence Gabette
Roselyne Segaud
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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FR1653947A 2016-05-02 2016-05-02 Procede de realisation d'interconnexions conductrices sur un substrat et interconnexions ainsi obtenues Active FR3050865B1 (fr)

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US5162257A (en) * 1991-09-13 1992-11-10 Mcnc Solder bump fabrication method
JP2985426B2 (ja) * 1991-10-09 1999-11-29 三菱電機株式会社 半導体装置およびその製造方法
EP0815593B1 (fr) * 1995-03-20 2001-12-12 Unitive International Limited Procedes de fabrication de perles de soudure et structures comprenant une couche barriere en titane
KR100319813B1 (ko) * 2000-01-03 2002-01-09 윤종용 유비엠 언더컷을 개선한 솔더 범프의 형성 방법
KR20020060307A (ko) * 2001-01-10 2002-07-18 윤종용 솔더 범프의 형성 방법
US8569897B2 (en) * 2009-09-14 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for preventing UBM layer from chemical attack and oxidation
KR101782503B1 (ko) * 2011-05-18 2017-09-28 삼성전자 주식회사 솔더 범프 붕괴를 억제하는 반도체 소자의 범프 형성방법
FR2980952A1 (fr) * 2011-10-03 2013-04-05 St Microelectronics Grenoble 2 Procede d'assemblage de deux dispositifs electroniques et structure comprenant ces dispositifs
US9177928B1 (en) * 2014-04-24 2015-11-03 Globalfoundries Contact and solder ball interconnect
US9324669B2 (en) * 2014-09-12 2016-04-26 International Business Machines Corporation Use of electrolytic plating to control solder wetting

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