KR0166397B1 - 트랜지스터 및 그 제조방법 - Google Patents

트랜지스터 및 그 제조방법

Info

Publication number
KR0166397B1
KR0166397B1 KR1019940005917A KR19940005917A KR0166397B1 KR 0166397 B1 KR0166397 B1 KR 0166397B1 KR 1019940005917 A KR1019940005917 A KR 1019940005917A KR 19940005917 A KR19940005917 A KR 19940005917A KR 0166397 B1 KR0166397 B1 KR 0166397B1
Authority
KR
South Korea
Prior art keywords
transistor
forming
same
Prior art date
Application number
KR1019940005917A
Other languages
English (en)
Other versions
KR940022915A (ko
Inventor
홍용 쟝
야스히꼬 다께무라
히데끼 우오찌
이따루 고야마
미노루 미야자끼
아까네 무라까미
도시미쓰 고누마
아끼라 스가와라
유끼꼬 우에하라
Original Assignee
Semiconductor Energy Lab Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08675093A external-priority patent/JP3315190B2/ja
Priority claimed from JP08675293A external-priority patent/JP3315191B2/ja
Priority claimed from JP08675193A external-priority patent/JP3396504B2/ja
Priority claimed from JP5263024A external-priority patent/JP2940653B2/ja
Application filed by Semiconductor Energy Lab Kk filed Critical Semiconductor Energy Lab Kk
Publication of KR940022915A publication Critical patent/KR940022915A/ko
Application granted granted Critical
Publication of KR0166397B1 publication Critical patent/KR0166397B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
KR1019940005917A 1993-03-22 1994-03-22 트랜지스터 및 그 제조방법 KR0166397B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP08675093A JP3315190B2 (ja) 1993-03-22 1993-03-22 薄膜トランジスタの作製方法
JP93-86751 1993-03-22
JP08675293A JP3315191B2 (ja) 1993-03-22 1993-03-22 薄膜トランジスタの作製方法
JP08675193A JP3396504B2 (ja) 1993-03-22 1993-03-22 薄膜トランジスタの作製方法
JP93-86750 1993-03-22
JP93-86752 1993-03-22
JP93-263024 1993-09-27
JP5263024A JP2940653B2 (ja) 1993-09-27 1993-09-27 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
KR940022915A KR940022915A (ko) 1994-10-22
KR0166397B1 true KR0166397B1 (ko) 1999-01-15

Family

ID=27467297

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940005917A KR0166397B1 (ko) 1993-03-22 1994-03-22 트랜지스터 및 그 제조방법

Country Status (2)

Country Link
US (1) US5580800A (ko)
KR (1) KR0166397B1 (ko)

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KR0131179B1 (ko) * 1993-02-22 1998-04-14 슌뻬이 야마자끼 전자회로 제조프로세스
JP3335757B2 (ja) * 1994-03-17 2002-10-21 株式会社半導体エネルギー研究所 陽極酸化方法
US5985690A (en) * 1995-01-30 1999-11-16 Nec Corporation Method of manufacturing contact image sensor
JPH08250743A (ja) * 1995-03-07 1996-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3759999B2 (ja) * 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 半導体装置、液晶表示装置、ｅｌ装置、ｔｖカメラ表示装置、パーソナルコンピュータ、カーナビゲーションシステム、ｔｖプロジェクション装置及びビデオカメラ
JPH10163501A (ja) * 1996-11-29 1998-06-19 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型トランジスタ
US5861335A (en) * 1997-03-21 1999-01-19 Advanced Micro Devices, Inc. Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability
US5994156A (en) * 1997-09-12 1999-11-30 Sharp Laboratories Of America, Inc. Method of making gate and source lines in TFT LCD panels using pure aluminum metal
US6396147B1 (en) 1998-05-16 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with metal-oxide conductors
JP3185759B2 (ja) * 1998-06-05 2001-07-11 日本電気株式会社 薄膜トランジスタの製造方法
US6051865A (en) * 1998-11-09 2000-04-18 Advanced Micro Devices, Inc. Transistor having a barrier layer below a high permittivity gate dielectric
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2002050764A (ja) * 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
US20020158046A1 (en) * 2001-04-27 2002-10-31 Chi Wu Formation of an optical component
KR100491142B1 (ko) * 2001-11-20 2005-05-24 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
US6921490B1 (en) 2002-09-06 2005-07-26 Kotura, Inc. Optical component having waveguides extending from a common region
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
WO2008081748A1 (ja) * 2006-12-28 2008-07-10 National University Corporation Tohoku University 半導体又は平面デイスプレイの製造装置に使用される構造部材とその製造方法
US10016843B2 (en) * 2015-03-20 2018-07-10 Ultratech, Inc. Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing
CN105702744B (zh) * 2016-04-05 2020-07-28 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
US10501839B2 (en) * 2018-04-11 2019-12-10 General Electric Company Methods of removing a ceramic coating from a substrate
US11661646B2 (en) 2021-04-21 2023-05-30 General Electric Comapny Dual phase magnetic material component and method of its formation
US11926880B2 (en) 2021-04-21 2024-03-12 General Electric Company Fabrication method for a component having magnetic and non-magnetic dual phases

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JPS56138929A (en) * 1980-03-31 1981-10-29 Canon Inc Component solution for etching
US4415606A (en) * 1983-01-10 1983-11-15 Ncr Corporation Method of reworking upper metal in multilayer metal integrated circuits
JPS6152376A (ja) * 1984-08-20 1986-03-15 Tokico Ltd アルミニウムの表面処理法
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
JPS62125633A (ja) * 1985-11-26 1987-06-06 Seiko Epson Corp 半導体装置の製造方法
JPS62211391A (ja) * 1986-03-12 1987-09-17 Nippon Telegr & Teleph Corp <Ntt> Ａｌ−Ｓｉ膜のエツチング液組成物
JPH01268840A (ja) * 1988-04-19 1989-10-26 Sumitomo Metal Mining Co Ltd 流電陽極用アルミニウム合金
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JPH03287797A (ja) * 1990-04-03 1991-12-18 Sumitomo Electric Ind Ltd 耐食部材
JPH04250626A (ja) * 1991-01-28 1992-09-07 Matsushita Electric Ind Co Ltd 多層配線装置
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JPH05152573A (ja) * 1991-11-29 1993-06-18 Nec Corp 薄膜トランジスタ及びその製造方法
JPH05299655A (ja) * 1992-04-08 1993-11-12 Nec Corp 薄膜トランジスタ
JPH06267959A (ja) * 1993-03-16 1994-09-22 Nippon Steel Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR940022915A (ko) 1994-10-22
US5580800A (en) 1996-12-03

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