WO2008081748A1 - 半導体又は平面デイスプレイの製造装置に使用される構造部材とその製造方法 - Google Patents
半導体又は平面デイスプレイの製造装置に使用される構造部材とその製造方法 Download PDFInfo
- Publication number
- WO2008081748A1 WO2008081748A1 PCT/JP2007/074636 JP2007074636W WO2008081748A1 WO 2008081748 A1 WO2008081748 A1 WO 2008081748A1 JP 2007074636 W JP2007074636 W JP 2007074636W WO 2008081748 A1 WO2008081748 A1 WO 2008081748A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- structural member
- producing
- film
- purity aluminum
- same
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/12764—Next to Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
- Y10T428/325—Magnetic layer next to second metal compound-containing layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrochemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Formation Of Insulating Films (AREA)
- Chemically Coating (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/521,387 US8642187B2 (en) | 2006-12-28 | 2007-12-21 | Structural member to be used in apparatus for manufacturing semiconductor or flat display, and method for producing the same |
JP2008552097A JPWO2008081748A1 (ja) | 2006-12-28 | 2007-12-21 | 半導体又は平面デイスプレイの製造装置に使用される構造部材とその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006355642 | 2006-12-28 | ||
JP2006-355642 | 2006-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081748A1 true WO2008081748A1 (ja) | 2008-07-10 |
Family
ID=39588432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074636 WO2008081748A1 (ja) | 2006-12-28 | 2007-12-21 | 半導体又は平面デイスプレイの製造装置に使用される構造部材とその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8642187B2 (ja) |
JP (1) | JPWO2008081748A1 (ja) |
WO (1) | WO2008081748A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008240024A (ja) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | 複合体およびその製造方法 |
JP2011117054A (ja) * | 2009-12-07 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置用のアルミナ部材及びプラズマ処理装置用のアルミナ部材の製造方法 |
EP2314728A4 (en) * | 2008-07-30 | 2017-12-13 | National University Corporation Tohoku Unversity | Al alloy member, electronic device manufacturing device, and manufacturing method for al alloy member with anodic oxide film |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101297489B1 (ko) | 2005-06-17 | 2013-08-16 | 미쓰비시 가가꾸 가부시키가이샤 | 금속 산화물막, 적층체, 금속 부재 및 그 제조 방법 |
JP6449224B2 (ja) * | 2013-03-14 | 2019-01-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上の高純度アルミニウムトップコート |
US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
KR102652258B1 (ko) * | 2016-07-12 | 2024-03-28 | 에이비엠 주식회사 | 금속부품 및 그 제조 방법 및 금속부품을 구비한 공정챔버 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004099972A (ja) * | 2002-09-10 | 2004-04-02 | Kyushu Mitsui Alum Kogyo Kk | 陽極酸化処理用アルミニウム合金及びそれを用いたプラズマ処理装置 |
JP2005524770A (ja) * | 2002-05-03 | 2005-08-18 | アプライド マテリアルズ インコーポレイテッド | 半導体処理装置に用いられる耐ハロゲン性陽極酸化アルミニウム |
JP2006128370A (ja) * | 2004-10-28 | 2006-05-18 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラムおよび記録媒体 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS5671821A (en) * | 1979-11-14 | 1981-06-15 | Hitachi Ltd | Substrate for magnetic disc and its manufacture |
JPH0237436B2 (ja) * | 1982-06-11 | 1990-08-24 | Daiwa Seiko Co | Arumidaikasutoseihinnoarumaitoshoriho |
JPS6224852A (ja) | 1985-07-25 | 1987-02-02 | Toyota Motor Corp | アルミニウムのコ−テイング方法 |
JPS62267482A (ja) | 1986-05-15 | 1987-11-20 | Showa Alum Corp | 真空用金属部品 |
JP2915640B2 (ja) | 1991-08-26 | 1999-07-05 | 株式会社日立製作所 | タスク間インタフェ−ステストシステム |
JPH05114582A (ja) | 1991-10-22 | 1993-05-07 | Tokyo Electron Yamanashi Kk | 真空処理装置 |
US5580800A (en) * | 1993-03-22 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of patterning aluminum containing group IIIb Element |
US5641375A (en) * | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
JP3378126B2 (ja) | 1995-09-01 | 2003-02-17 | 三菱電機株式会社 | 真空処理装置および半導体装置の製造方法 |
US6294799B1 (en) * | 1995-11-27 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
US5723221A (en) * | 1996-04-26 | 1998-03-03 | Formica Corporation | Aluminous press plate and process for producing same |
JPH10130884A (ja) | 1996-10-25 | 1998-05-19 | Nagayama Kogyosho:Kk | 耐熱性陽極酸化皮膜の処理方法 |
JP3256480B2 (ja) | 1997-12-19 | 2002-02-12 | スカイアルミニウム株式会社 | 耐加熱クラック性に優れた高強度Al−Zn−Mg−Cu系合金アルマイト部材およびその製造方法 |
JPH11204434A (ja) * | 1998-01-12 | 1999-07-30 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2000150718A (ja) | 1998-11-09 | 2000-05-30 | Sumitomo Metal Ind Ltd | スルーホール付き金属ベース配線基板および製造方法 |
US6371841B1 (en) * | 1999-02-23 | 2002-04-16 | Ralph Ray | Knife maintenance apparatus having two distinct maintenance surfaces |
US7048814B2 (en) * | 2002-02-08 | 2006-05-23 | Applied Materials, Inc. | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus |
JP2005060044A (ja) | 2003-08-14 | 2005-03-10 | Asahi Jushi Kogyo Kk | 合成樹脂フィルム等の巻き取り方法及び巻き取り装置 |
JP3917966B2 (ja) | 2003-09-29 | 2007-05-23 | 株式会社アルバック | 真空装置及びその部品に使用されるアルミニウム又はアルミニウム合金の表面処理方法、真空装置及びその部品 |
KR101297489B1 (ko) * | 2005-06-17 | 2013-08-16 | 미쓰비시 가가꾸 가부시키가이샤 | 금속 산화물막, 적층체, 금속 부재 및 그 제조 방법 |
US8282807B2 (en) * | 2006-12-28 | 2012-10-09 | National University Corporation Tohoku University | Metal member having a metal oxide film and method of manufacturing the same |
-
2007
- 2007-12-21 JP JP2008552097A patent/JPWO2008081748A1/ja active Pending
- 2007-12-21 US US12/521,387 patent/US8642187B2/en not_active Expired - Fee Related
- 2007-12-21 WO PCT/JP2007/074636 patent/WO2008081748A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005524770A (ja) * | 2002-05-03 | 2005-08-18 | アプライド マテリアルズ インコーポレイテッド | 半導体処理装置に用いられる耐ハロゲン性陽極酸化アルミニウム |
JP2004099972A (ja) * | 2002-09-10 | 2004-04-02 | Kyushu Mitsui Alum Kogyo Kk | 陽極酸化処理用アルミニウム合金及びそれを用いたプラズマ処理装置 |
JP2006128370A (ja) * | 2004-10-28 | 2006-05-18 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラムおよび記録媒体 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008240024A (ja) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | 複合体およびその製造方法 |
EP2314728A4 (en) * | 2008-07-30 | 2017-12-13 | National University Corporation Tohoku Unversity | Al alloy member, electronic device manufacturing device, and manufacturing method for al alloy member with anodic oxide film |
JP2011117054A (ja) * | 2009-12-07 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置用のアルミナ部材及びプラズマ処理装置用のアルミナ部材の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8642187B2 (en) | 2014-02-04 |
JPWO2008081748A1 (ja) | 2010-04-30 |
US20100330390A1 (en) | 2010-12-30 |
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