GB2282262B - Field effect transistor and method for producing the field effect transistor - Google Patents

Field effect transistor and method for producing the field effect transistor

Info

Publication number
GB2282262B
GB2282262B GB9419782A GB9419782A GB2282262B GB 2282262 B GB2282262 B GB 2282262B GB 9419782 A GB9419782 A GB 9419782A GB 9419782 A GB9419782 A GB 9419782A GB 2282262 B GB2282262 B GB 2282262B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
producing
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9419782A
Other versions
GB9419782D0 (en
GB2282262A (en
Inventor
Yasutaka Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5013607A external-priority patent/JPH06232170A/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to GB9419782A priority Critical patent/GB2282262B/en
Publication of GB9419782D0 publication Critical patent/GB9419782D0/en
Publication of GB2282262A publication Critical patent/GB2282262A/en
Application granted granted Critical
Publication of GB2282262B publication Critical patent/GB2282262B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9419782A 1993-01-29 1993-08-04 Field effect transistor and method for producing the field effect transistor Expired - Fee Related GB2282262B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9419782A GB2282262B (en) 1993-01-29 1993-08-04 Field effect transistor and method for producing the field effect transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5013607A JPH06232170A (en) 1993-01-29 1993-01-29 Field effect transistor and its manufacture
GB9316182A GB2274944B (en) 1993-01-29 1993-08-04 Field effect transistor and method for producing the field effect transistor
GB9419782A GB2282262B (en) 1993-01-29 1993-08-04 Field effect transistor and method for producing the field effect transistor

Publications (3)

Publication Number Publication Date
GB9419782D0 GB9419782D0 (en) 1994-11-16
GB2282262A GB2282262A (en) 1995-03-29
GB2282262B true GB2282262B (en) 1997-04-23

Family

ID=27266800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9419782A Expired - Fee Related GB2282262B (en) 1993-01-29 1993-08-04 Field effect transistor and method for producing the field effect transistor

Country Status (1)

Country Link
GB (1) GB2282262B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027992A (en) * 1978-08-08 1980-02-27 Siemens Ag Improvements in or relating to MOS field effect transistors for high voltage use
JPS5852881A (en) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS6161465A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Mos field effect transistor and manufacture thereof
JPH02211638A (en) * 1989-02-13 1990-08-22 Mitsubishi Electric Corp Manufacture of asymmetrical fet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027992A (en) * 1978-08-08 1980-02-27 Siemens Ag Improvements in or relating to MOS field effect transistors for high voltage use
JPS5852881A (en) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS6161465A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Mos field effect transistor and manufacture thereof
JPH02211638A (en) * 1989-02-13 1990-08-22 Mitsubishi Electric Corp Manufacture of asymmetrical fet

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, 14 E 999 & JP 02 211 638 A *
Patent Abstracts of Japan, 154 E 425 & JP 61 061 465 A *
Patent Abstracts of Japan, 21 E 182 & JP 58 052 881 A *

Also Published As

Publication number Publication date
GB9419782D0 (en) 1994-11-16
GB2282262A (en) 1995-03-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000804