GB9419782D0 - Field effect transistor and method for producing the field effect transistor - Google Patents
Field effect transistor and method for producing the field effect transistorInfo
- Publication number
- GB9419782D0 GB9419782D0 GB9419782A GB9419782A GB9419782D0 GB 9419782 D0 GB9419782 D0 GB 9419782D0 GB 9419782 A GB9419782 A GB 9419782A GB 9419782 A GB9419782 A GB 9419782A GB 9419782 D0 GB9419782 D0 GB 9419782D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- producing
- transistor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9419782A GB2282262B (en) | 1993-01-29 | 1993-08-04 | Field effect transistor and method for producing the field effect transistor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5013607A JPH06232170A (en) | 1993-01-29 | 1993-01-29 | Field effect transistor and its manufacture |
| GB9316182A GB2274944B (en) | 1993-01-29 | 1993-08-04 | Field effect transistor and method for producing the field effect transistor |
| GB9419782A GB2282262B (en) | 1993-01-29 | 1993-08-04 | Field effect transistor and method for producing the field effect transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9419782D0 true GB9419782D0 (en) | 1994-11-16 |
| GB2282262A GB2282262A (en) | 1995-03-29 |
| GB2282262B GB2282262B (en) | 1997-04-23 |
Family
ID=27266800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9419782A Expired - Fee Related GB2282262B (en) | 1993-01-29 | 1993-08-04 | Field effect transistor and method for producing the field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2282262B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2834724A1 (en) * | 1978-08-08 | 1980-02-14 | Siemens Ag | MOS FIELD EFFECT TRANSISTORS FOR HIGHER VOLTAGES |
| JPS5852881A (en) * | 1981-09-25 | 1983-03-29 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
| JPS6161465A (en) * | 1984-09-03 | 1986-03-29 | Hitachi Ltd | Mos field effect transistor and manufacture thereof |
| JP2553690B2 (en) * | 1989-02-13 | 1996-11-13 | 三菱電機株式会社 | Method for manufacturing asymmetric structure FET |
-
1993
- 1993-08-04 GB GB9419782A patent/GB2282262B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2282262A (en) | 1995-03-29 |
| GB2282262B (en) | 1997-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20000804 |