KR0158244B1 - 전계방출 캐소드 소자 - Google Patents

전계방출 캐소드 소자 Download PDF

Info

Publication number
KR0158244B1
KR0158244B1 KR1019940020920A KR19940020920A KR0158244B1 KR 0158244 B1 KR0158244 B1 KR 0158244B1 KR 1019940020920 A KR1019940020920 A KR 1019940020920A KR 19940020920 A KR19940020920 A KR 19940020920A KR 0158244 B1 KR0158244 B1 KR 0158244B1
Authority
KR
South Korea
Prior art keywords
cathode
conductor
layer
emitter
field emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940020920A
Other languages
English (en)
Korean (ko)
Other versions
KR950010072A (ko
Inventor
시게오 이토
데루오 와타나베
다카히로 니이야마
Original Assignee
호소야 레이지
후다바 덴시 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호소야 레이지, 후다바 덴시 고교 가부시키가이샤 filed Critical 호소야 레이지
Publication of KR950010072A publication Critical patent/KR950010072A/ko
Application granted granted Critical
Publication of KR0158244B1 publication Critical patent/KR0158244B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
KR1019940020920A 1993-09-27 1994-08-24 전계방출 캐소드 소자 Expired - Fee Related KR0158244B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26039093A JP2699827B2 (ja) 1993-09-27 1993-09-27 電界放出カソード素子
JP93-260390 1993-09-27

Publications (2)

Publication Number Publication Date
KR950010072A KR950010072A (ko) 1995-04-26
KR0158244B1 true KR0158244B1 (ko) 1998-12-01

Family

ID=17347259

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940020920A Expired - Fee Related KR0158244B1 (ko) 1993-09-27 1994-08-24 전계방출 캐소드 소자

Country Status (5)

Country Link
US (1) US5594298A (enExample)
JP (1) JP2699827B2 (enExample)
KR (1) KR0158244B1 (enExample)
FR (1) FR2710781B1 (enExample)
TW (1) TW245841B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
KR100351068B1 (ko) * 1995-01-27 2003-01-29 삼성에스디아이 주식회사 전계방출표시장치및그제조방법
KR100405886B1 (ko) * 1995-08-04 2004-04-03 프린터블 필드 에미터스 리미티드 전계전자방출물질과그제조방법및그물질을이용한소자
JP3060928B2 (ja) * 1995-12-13 2000-07-10 双葉電子工業株式会社 電界放出カソードとその製造方法
JPH09219144A (ja) * 1996-02-08 1997-08-19 Futaba Corp 電界放出カソードとその製造方法
JP3080004B2 (ja) * 1996-06-21 2000-08-21 日本電気株式会社 電界放出型冷陰極およびその製造方法
WO1998034265A1 (fr) * 1997-02-04 1998-08-06 Leonid Danilovich Karpov Mode de preparation d'un appareil a resistances du type planar
JPH10340666A (ja) * 1997-06-09 1998-12-22 Futaba Corp 電界電子放出素子
US6013986A (en) * 1997-06-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having multi-layer resistor
KR100288101B1 (ko) * 1997-07-25 2001-05-02 김영남 전계 방출 표시기의 셀 구동회로
US6144144A (en) * 1997-10-31 2000-11-07 Candescent Technologies Corporation Patterned resistor suitable for electron-emitting device
US6059625A (en) 1999-03-01 2000-05-09 Micron Technology, Inc. Method of fabricating field emission arrays employing a hard mask to define column lines
US6822386B2 (en) 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
US6017772A (en) * 1999-03-01 2000-01-25 Micron Technology, Inc. Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
GB2370914A (en) * 2000-03-22 2002-07-10 Lg Electronics Inc Field emission cold cathode structure with fusible link between the main and gate electrodes
KR20050113505A (ko) * 2004-05-29 2005-12-02 삼성에스디아이 주식회사 전계방출 표시장치 및 그 제조방법
JP4817641B2 (ja) 2004-10-26 2011-11-16 キヤノン株式会社 画像形成装置
JP2007087934A (ja) 2005-08-24 2007-04-05 Canon Inc 電子源及び画像表示装置
KR100883039B1 (ko) * 2007-10-01 2009-02-09 주식회사 동부하이텍 반도체 소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
JP2634295B2 (ja) * 1990-05-17 1997-07-23 双葉電子工業株式会社 電子放出素子
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
JP2656851B2 (ja) * 1990-09-27 1997-09-24 工業技術院長 画像表示装置
FR2687839B1 (fr) * 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.

Also Published As

Publication number Publication date
KR950010072A (ko) 1995-04-26
FR2710781A1 (fr) 1995-04-07
JPH0794076A (ja) 1995-04-07
FR2710781B1 (fr) 1996-02-16
TW245841B (enExample) 1995-04-21
US5594298A (en) 1997-01-14
JP2699827B2 (ja) 1998-01-19

Similar Documents

Publication Publication Date Title
KR0158244B1 (ko) 전계방출 캐소드 소자
US6002199A (en) Structure and fabrication of electron-emitting device having ladder-like emitter electrode
JP3999276B2 (ja) 電荷散逸型電界放射デバイス
JPH0729484A (ja) 集束電極を有する電界放出カソード及び集束電極を有する電界放出カソードの製造方法
US5719466A (en) Field emission display provided with repair capability of defects
JPH10308162A (ja) 電界放出素子
KR100453397B1 (ko) 개선된전계방출장치
KR100273487B1 (ko) 전계방출캐소드및그사용방법
JP3961045B2 (ja) フラットパネル表示装置用の新規な電界放出素子
JP3066573B2 (ja) 電界放出型表示素子
JP2900837B2 (ja) 電界放射型冷陰極装置及びその製造方法
US5932962A (en) Electron emitter elements, their use and fabrication processes therefor
JP2897520B2 (ja) 冷陰極
JP2737618B2 (ja) 電界放出形電子源
KR100256396B1 (ko) 전계방출소자 및 그의 제조방법
EP0724280A1 (en) Method of fabricating a field-emission cold cathode
JP2743794B2 (ja) 電界放出カソード及び電界放出カソードの製造方法
JPH1092295A (ja) 電界放出型冷陰極
WO2007089991A2 (en) Field emission device
JPH05144370A (ja) 微小電界放出陰極アレイ
JP3752808B2 (ja) 電界電子放出素子
JP2000123713A (ja) 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
JPH0794075A (ja) 電界放出カソード素子
JP3477070B2 (ja) 電子放出素子及びスイッチング回路
KR100405971B1 (ko) 전계방출소자의 집속전극 구조 및 형성방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20020725

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20030805

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20030805

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301