JPWO2024143386A5 - - Google Patents

Info

Publication number
JPWO2024143386A5
JPWO2024143386A5 JP2024567877A JP2024567877A JPWO2024143386A5 JP WO2024143386 A5 JPWO2024143386 A5 JP WO2024143386A5 JP 2024567877 A JP2024567877 A JP 2024567877A JP 2024567877 A JP2024567877 A JP 2024567877A JP WO2024143386 A5 JPWO2024143386 A5 JP WO2024143386A5
Authority
JP
Japan
Prior art keywords
impurity region
region
semiconductor device
sic
sic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567877A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024143386A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/046707 external-priority patent/WO2024143386A1/ja
Publication of JPWO2024143386A1 publication Critical patent/JPWO2024143386A1/ja
Publication of JPWO2024143386A5 publication Critical patent/JPWO2024143386A5/ja
Pending legal-status Critical Current

Links

JP2024567877A 2022-12-28 2023-12-26 Pending JPWO2024143386A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022212611 2022-12-28
PCT/JP2023/046707 WO2024143386A1 (ja) 2022-12-28 2023-12-26 SiC半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024143386A1 JPWO2024143386A1 (https=) 2024-07-04
JPWO2024143386A5 true JPWO2024143386A5 (https=) 2025-09-11

Family

ID=91717836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567877A Pending JPWO2024143386A1 (https=) 2022-12-28 2023-12-26

Country Status (4)

Country Link
JP (1) JPWO2024143386A1 (https=)
CN (1) CN120457785A (https=)
DE (1) DE112023004913T5 (https=)
WO (1) WO2024143386A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142537A (ja) * 2010-12-16 2012-07-26 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタとその製造方法
JP6918736B2 (ja) * 2018-04-02 2021-08-11 株式会社豊田中央研究所 半導体装置
JP6710741B2 (ja) * 2018-11-22 2020-06-17 株式会社東芝 半導体装置
DE112021006730T5 (de) * 2021-02-01 2023-10-12 Rohm Co., Ltd. Sic-halbleiterbauelement
JP7574743B2 (ja) * 2021-05-28 2024-10-29 株式会社デンソー 半導体装置およびその製造方法

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