JPWO2024084621A5 - - Google Patents

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Publication number
JPWO2024084621A5
JPWO2024084621A5 JP2024551126A JP2024551126A JPWO2024084621A5 JP WO2024084621 A5 JPWO2024084621 A5 JP WO2024084621A5 JP 2024551126 A JP2024551126 A JP 2024551126A JP 2024551126 A JP2024551126 A JP 2024551126A JP WO2024084621 A5 JPWO2024084621 A5 JP WO2024084621A5
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JP
Japan
Prior art keywords
semiconductor device
substrate
drain pad
wire
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024551126A
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English (en)
Japanese (ja)
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JP7782714B2 (ja
JPWO2024084621A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/038906 external-priority patent/WO2024084621A1/ja
Publication of JPWO2024084621A1 publication Critical patent/JPWO2024084621A1/ja
Publication of JPWO2024084621A5 publication Critical patent/JPWO2024084621A5/ja
Application granted granted Critical
Publication of JP7782714B2 publication Critical patent/JP7782714B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2024551126A 2022-10-19 2022-10-19 半導体装置 Active JP7782714B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/038906 WO2024084621A1 (ja) 2022-10-19 2022-10-19 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024084621A1 JPWO2024084621A1 (https=) 2024-04-25
JPWO2024084621A5 true JPWO2024084621A5 (https=) 2024-12-27
JP7782714B2 JP7782714B2 (ja) 2025-12-09

Family

ID=90737113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024551126A Active JP7782714B2 (ja) 2022-10-19 2022-10-19 半導体装置

Country Status (4)

Country Link
US (1) US20250351479A1 (https=)
JP (1) JP7782714B2 (https=)
CN (1) CN120019727A (https=)
WO (1) WO2024084621A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267331A (ja) * 2000-03-15 2001-09-28 Hitachi Ltd 半導体装置の製造方法
JP2002270822A (ja) 2001-03-09 2002-09-20 Toshiba Corp 半導体装置
JP2008226871A (ja) * 2007-03-08 2008-09-25 Nec Corp 半導体装置及びその製造方法
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
CN106252310B (zh) 2016-06-02 2020-05-05 苏州能讯高能半导体有限公司 半导体器件及其制造方法
JP6448865B1 (ja) * 2018-02-01 2019-01-09 三菱電機株式会社 半導体装置およびその製造方法
CN111354640B (zh) 2018-12-21 2022-08-12 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
DE112019007477T5 (de) * 2019-06-18 2022-03-10 Mitsubishi Electric Corporation Halbleitereinheit und herstelungsverfahren für eine halbleitereinheit
JP7456517B2 (ja) * 2020-11-16 2024-03-27 三菱電機株式会社 トランジスタ

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