JPWO2024084621A1 - - Google Patents
Info
- Publication number
- JPWO2024084621A1 JPWO2024084621A1 JP2024551126A JP2024551126A JPWO2024084621A1 JP WO2024084621 A1 JPWO2024084621 A1 JP WO2024084621A1 JP 2024551126 A JP2024551126 A JP 2024551126A JP 2024551126 A JP2024551126 A JP 2024551126A JP WO2024084621 A1 JPWO2024084621 A1 JP WO2024084621A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/483—Interconnections over air gaps, e.g. air bridges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/038906 WO2024084621A1 (ja) | 2022-10-19 | 2022-10-19 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024084621A1 true JPWO2024084621A1 (https=) | 2024-04-25 |
| JPWO2024084621A5 JPWO2024084621A5 (https=) | 2024-12-27 |
| JP7782714B2 JP7782714B2 (ja) | 2025-12-09 |
Family
ID=90737113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024551126A Active JP7782714B2 (ja) | 2022-10-19 | 2022-10-19 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250351479A1 (https=) |
| JP (1) | JP7782714B2 (https=) |
| CN (1) | CN120019727A (https=) |
| WO (1) | WO2024084621A1 (https=) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001267331A (ja) * | 2000-03-15 | 2001-09-28 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002270822A (ja) * | 2001-03-09 | 2002-09-20 | Toshiba Corp | 半導体装置 |
| JP2008226871A (ja) * | 2007-03-08 | 2008-09-25 | Nec Corp | 半導体装置及びその製造方法 |
| US20160343809A1 (en) * | 2015-05-22 | 2016-11-24 | Freescale Semiconductor, Inc. | Device with a conductive feature formed over a cavity and method therefor |
| CN106252310A (zh) * | 2016-06-02 | 2016-12-21 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
| WO2019150526A1 (ja) * | 2018-02-01 | 2019-08-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| CN111354640A (zh) * | 2018-12-21 | 2020-06-30 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
| WO2020255259A1 (ja) * | 2019-06-18 | 2020-12-24 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| WO2022102137A1 (ja) * | 2020-11-16 | 2022-05-19 | 三菱電機株式会社 | トランジスタ |
-
2022
- 2022-10-19 CN CN202280097058.5A patent/CN120019727A/zh active Pending
- 2022-10-19 WO PCT/JP2022/038906 patent/WO2024084621A1/ja not_active Ceased
- 2022-10-19 US US18/861,500 patent/US20250351479A1/en active Pending
- 2022-10-19 JP JP2024551126A patent/JP7782714B2/ja active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001267331A (ja) * | 2000-03-15 | 2001-09-28 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002270822A (ja) * | 2001-03-09 | 2002-09-20 | Toshiba Corp | 半導体装置 |
| JP2008226871A (ja) * | 2007-03-08 | 2008-09-25 | Nec Corp | 半導体装置及びその製造方法 |
| US20160343809A1 (en) * | 2015-05-22 | 2016-11-24 | Freescale Semiconductor, Inc. | Device with a conductive feature formed over a cavity and method therefor |
| CN106252310A (zh) * | 2016-06-02 | 2016-12-21 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
| WO2019150526A1 (ja) * | 2018-02-01 | 2019-08-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| CN111354640A (zh) * | 2018-12-21 | 2020-06-30 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
| WO2020255259A1 (ja) * | 2019-06-18 | 2020-12-24 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| WO2022102137A1 (ja) * | 2020-11-16 | 2022-05-19 | 三菱電機株式会社 | トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7782714B2 (ja) | 2025-12-09 |
| CN120019727A (zh) | 2025-05-16 |
| US20250351479A1 (en) | 2025-11-13 |
| WO2024084621A1 (ja) | 2024-04-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241010 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20241010 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20251028 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20251110 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7782714 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |