JPWO2023032706A5 - - Google Patents
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- Publication number
- JPWO2023032706A5 JPWO2023032706A5 JP2023545446A JP2023545446A JPWO2023032706A5 JP WO2023032706 A5 JPWO2023032706 A5 JP WO2023032706A5 JP 2023545446 A JP2023545446 A JP 2023545446A JP 2023545446 A JP2023545446 A JP 2023545446A JP WO2023032706 A5 JPWO2023032706 A5 JP WO2023032706A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide layer
- insulating
- silicon
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021142969 | 2021-09-02 | ||
| JP2021142969 | 2021-09-02 | ||
| PCT/JP2022/031324 WO2023032706A1 (ja) | 2021-09-02 | 2022-08-19 | レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023032706A1 JPWO2023032706A1 (https=) | 2023-03-09 |
| JPWO2023032706A5 true JPWO2023032706A5 (https=) | 2024-05-16 |
| JP7623094B2 JP7623094B2 (ja) | 2025-01-28 |
Family
ID=85412240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023545446A Active JP7623094B2 (ja) | 2021-09-02 | 2022-08-19 | レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240387176A1 (https=) |
| JP (1) | JP7623094B2 (https=) |
| KR (1) | KR20240046917A (https=) |
| CN (1) | CN117836903A (https=) |
| WO (1) | WO2023032706A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163323A (ja) * | 2001-11-27 | 2003-06-06 | Sony Corp | 回路モジュール及びその製造方法 |
| JP7386077B2 (ja) * | 2019-12-26 | 2023-11-24 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP7304433B2 (ja) * | 2019-12-26 | 2023-07-06 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2021114534A (ja) * | 2020-01-17 | 2021-08-05 | 凸版印刷株式会社 | 配線基板および配線基板の製造方法 |
-
2022
- 2022-08-19 WO PCT/JP2022/031324 patent/WO2023032706A1/ja not_active Ceased
- 2022-08-19 CN CN202280057262.4A patent/CN117836903A/zh active Pending
- 2022-08-19 US US18/688,382 patent/US20240387176A1/en active Pending
- 2022-08-19 KR KR1020247009730A patent/KR20240046917A/ko active Pending
- 2022-08-19 JP JP2023545446A patent/JP7623094B2/ja active Active
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