KR20240046917A - 레이저 리프트 오프용의 적층 기판, 기판 처리 방법 및 기판 처리 장치 - Google Patents

레이저 리프트 오프용의 적층 기판, 기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR20240046917A
KR20240046917A KR1020247009730A KR20247009730A KR20240046917A KR 20240046917 A KR20240046917 A KR 20240046917A KR 1020247009730 A KR1020247009730 A KR 1020247009730A KR 20247009730 A KR20247009730 A KR 20247009730A KR 20240046917 A KR20240046917 A KR 20240046917A
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KR
South Korea
Prior art keywords
substrate
layer
insulating layer
laser beam
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247009730A
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English (en)
Korean (ko)
Inventor
노보루 오오이케
키요타카 이마이
요시히로 히로타
모토유키 사토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240046917A publication Critical patent/KR20240046917A/ko
Pending legal-status Critical Current

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    • H01L21/67115—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H01L21/02164—
    • H01L21/3065—
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020247009730A 2021-09-02 2022-08-19 레이저 리프트 오프용의 적층 기판, 기판 처리 방법 및 기판 처리 장치 Pending KR20240046917A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021142969 2021-09-02
JPJP-P-2021-142969 2021-09-02
PCT/JP2022/031324 WO2023032706A1 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

Publications (1)

Publication Number Publication Date
KR20240046917A true KR20240046917A (ko) 2024-04-11

Family

ID=85412240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247009730A Pending KR20240046917A (ko) 2021-09-02 2022-08-19 레이저 리프트 오프용의 적층 기판, 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US20240387176A1 (https=)
JP (1) JP7623094B2 (https=)
KR (1) KR20240046917A (https=)
CN (1) CN117836903A (https=)
WO (1) WO2023032706A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) * 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
JP7386077B2 (ja) * 2019-12-26 2023-11-24 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7304433B2 (ja) * 2019-12-26 2023-07-06 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021114534A (ja) * 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Z.Wang, A.Scarpa, S.Smits, C.Salm, F.Kuper, "Temperature Effect on Antenna Protection Strategy for Plasma-Process Induced Charging Damage, "International Symposium on Plasma and Process-Induced Damage, pp. 134-137, 2002.

Also Published As

Publication number Publication date
US20240387176A1 (en) 2024-11-21
JPWO2023032706A1 (https=) 2023-03-09
TW202338911A (zh) 2023-10-01
JP7623094B2 (ja) 2025-01-28
WO2023032706A1 (ja) 2023-03-09
CN117836903A (zh) 2024-04-05

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