JP6915806B2 - 太陽電池及び方法 - Google Patents
太陽電池及び方法 Download PDFInfo
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- JP6915806B2 JP6915806B2 JP2017526101A JP2017526101A JP6915806B2 JP 6915806 B2 JP6915806 B2 JP 6915806B2 JP 2017526101 A JP2017526101 A JP 2017526101A JP 2017526101 A JP2017526101 A JP 2017526101A JP 6915806 B2 JP6915806 B2 JP 6915806B2
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- 238000000034 method Methods 0.000 title claims description 104
- 229910052751 metal Inorganic materials 0.000 claims description 214
- 239000002184 metal Substances 0.000 claims description 214
- 239000012811 non-conductive material Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000011888 foil Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 238000000059 patterning Methods 0.000 claims description 36
- 239000011230 binding agent Substances 0.000 claims description 20
- 238000000608 laser ablation Methods 0.000 claims description 17
- 239000000049 pigment Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000001913 cellulose Substances 0.000 claims description 5
- 229920002678 cellulose Polymers 0.000 claims description 5
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 27
- 230000006378 damage Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- -1 silicon alkoxide Chemical class 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
[項目1]
太陽電池であって、
基板と、
上記基板の中又は上方に配設された、複数の交互に設けられたN型及びP型半導体領域と、
交互に設けられた上記N型及びP型の半導体領域の間の位置と位置合わせをしており、バインダ及び不透明顔料を含む、複数の非導電性材料領域と、
複数の交互に設けられた上記N型及びP型半導体領域に電気的に接続されている、複数の導電性コンタクト構造と、を含み、各導電性コンタクト構造は、交互に設けられた上記N型及びP型半導体領域のうちの対応する1つの上方に及びそれに位置合わせをして配設された、金属箔部分を含み、上記金属箔部分は隆起及び張り出し部分を含み、上記隆起は上記複数の非導電性材料領域のうちの1つに横方向に隣接し、上記張り出し部分は上記複数の非導電性材料領域のうちの1つの上にある、太陽電池。
[項目2]
上記バインダがセルロース又はシルセスキオキサンであり、上記不透明顔料が酸化チタン(TiO 2 )又は炭酸カルシウム(CaCO 3 )である、項目1に記載の太陽電池。
[項目3]
上記金属箔部分がアルミニウムを含む、項目1又は2に記載の太陽電池。
[項目4]
上記各導電性コンタクト構造が、複数の交互に設けられた上記N型及びP型半導体領域のうちの対応する1つと上記金属箔部分の上記隆起の間に直接配設された金属シード層を更に含む、項目1から3の何れか一項に記載の太陽電池。
[項目5]
太陽電池を製造する方法であって、上記方法が、
金属箔の第1表面をパターニングして、上記金属箔に複数の交互に設けられた溝及び隆起を提供することと、
上記金属箔の上記溝に非導電性材料領域を形成することと、
基板の中又は上方に配設された複数の交互に設けられたN型及びP型半導体領域の上方に、上記金属箔を配置して、交互に設けられた上記N型及びP型の半導体領域の間の位置と位置合わせをした非導電性材料領域を提供し、かつ交互に設けられた上記N型及びP型半導体領域と位置合わせをした上記隆起を提供することと、
上記金属箔の上記隆起を、交互に設けられた上記N型及びP型半導体領域に接着させることと、
上記非導電性材料領域と位置合わせをした領域で、上記金属箔の第2表面から上記金属箔を通して上記金属箔をパターニングすることと、
を含む、方法。
[項目6]
上記金属箔の上記第1表面にパターニングすることが、上記金属箔の全体の厚さの約90〜95%の範囲で、上記金属箔の厚みをレーザーアブレーションすることを含む、項目5に記載の方法。
[項目7]
上記金属箔の上記溝に上記非導電性材料領域を形成することが、上記金属箔の上記溝内にペーストを塗布して、次に上記ペーストを硬化させることを含む、項目5又は6に記載の方法。
[項目8]
上記金属箔の上記第1表面にパターニングすること及び上記非導電性材料領域を形成することが、ロールベースのプロセスとして実行される、項目5から7の何れか一項に記載の方法。
[項目9]
上記非導電性材料領域を形成することの後に、かつ複数の交互に設けられた上記N型及びP型半導体領域の上方に上記金属箔を配置することの前に、上記基板の外周と実質的に同じサイズの外周を有するように上記金属箔を切断することを更に含む、項目8に記載の方法。
[項目10]
上記金属箔の上記隆起を交互に設けられた上記N型及びP型半導体領域に接着させることが、レーザー溶接プロセス、熱圧縮プロセス及び超音波接合プロセスからなる群から選択される技術を使用することを含む、項目5から9の何れか一項に記載の方法。
Claims (16)
- 太陽電池であって、
基板と、
前記基板の中又は上方に配設された、複数の交互に設けられたN型及びP型半導体領域と、
交互に設けられた前記N型及びP型の半導体領域の間の位置と位置合わせをしており、バインダ及び不透明顔料を含む、複数の非導電性材料領域と、
複数の交互に設けられた前記N型及びP型半導体領域に電気的に接続されている、複数の導電性コンタクト構造と、
を含み、
各導電性コンタクト構造は、交互に設けられた前記N型及びP型半導体領域のうちの対応する1つの上方に及びそれに位置合わせをして配設された、金属箔部分を含み、
前記金属箔部分は隆起及び張り出し部分を含み、前記隆起は前記複数の非導電性材料領域のうちの1つに横方向に隣接し、
前記張り出し部分は前記複数の非導電性材料領域のうちの1つの上にあり、
前記非導電性材料領域と、交互に設けられた前記N型及びP型半導体領域との間に、空隙が設けられた、
太陽電池。 - 前記空隙が、前記張り出し部分の下方にも設けられた、請求項1に記載の太陽電池。
- 前記非導電性材料領域の前記空隙に接する面が、粗面である、請求項1または2に記載の太陽電池。
- 前記金属箔部分と、交互に設けられた前記N型及びP型半導体領域との間に、溶接部が設けられ、
前記導電性コンタクト構造は、交互に設けられた前記N型及びP型半導体領域に、前記溶接部を介して電気的に接続された、請求項1から3の何れか一項に記載の太陽電池。 - 前記非導電性材料領域の上面の少なくとも一部には、窪みが設けられ、
前記窪みの上方には、前記金属箔部分が設けられない、
請求項1から4の何れか一項に記載の太陽電池。 - 前記バインダがセルロース又はシルセスキオキサンであり、前記不透明顔料が酸化チタン(TiO2)又は炭酸カルシウム(CaCO3)である、請求項1から5の何れか一項に記載の太陽電池。
- 前記金属箔部分がアルミニウムを含む、請求項1から6の何れか一項に記載の太陽電池。
- 前記各導電性コンタクト構造が、複数の交互に設けられた前記N型及びP型半導体領域のうちの対応する1つと前記金属箔部分の前記隆起の間に直接配設された金属シード層を更に含む、請求項1から7の何れか一項に記載の太陽電池。
- 太陽電池を製造する方法であって、前記方法が、
金属箔の第1表面をパターニングして、前記金属箔に複数の交互に設けられた溝及び隆起を提供することと、
前記金属箔の前記溝に、バインダ及び不透明顔料を含む非導電性材料領域を形成することと、
基板の中又は上方に配設された複数の交互に設けられたN型及びP型半導体領域の上方に、前記金属箔を配置して、交互に設けられた前記N型及びP型の半導体領域の間の位置と位置合わせをした非導電性材料領域を提供し、かつ交互に設けられた前記N型及びP型半導体領域と位置合わせをした前記隆起を提供することと、
前記金属箔の前記隆起を、交互に設けられた前記N型及びP型半導体領域に接着させ、前記非導電性材料領域と、交互に設けられた前記N型及びP型半導体領域との間に空隙を提供することと、
前記非導電性材料領域と位置合わせをした領域で、前記金属箔の第2表面から前記金属箔を通して前記金属箔をパターニングすることと、
を含む、方法。 - 前記非導電性材料領域の前記空隙に接する面が、粗面である、請求項9に記載の方法。
- 前記非導電性材料領域の上面の一部と、前記非導電性材料領域の前記上面の一部の上方の前記金属箔とを、レーザーにより除去すること、をさらに含む、請求項9または10に記載の方法。
- 前記金属箔の前記第1表面にパターニングすることが、前記金属箔の全体の厚さの約90〜95%の範囲で、前記金属箔の厚みをレーザーアブレーションすることを含む、請求項9から11の何れか一項に記載の方法。
- 前記金属箔の前記溝に前記非導電性材料領域を形成することが、前記金属箔の前記溝内にペーストを塗布して、次に前記ペーストを硬化させることを含む、請求項9から12の何れか一項に記載の方法。
- 前記金属箔の前記第1表面にパターニングすること及び前記非導電性材料領域を形成することが、ロールベースのプロセスとして実行される、請求項9から13の何れか一項に記載の方法。
- 前記非導電性材料領域を形成することの後に、かつ複数の交互に設けられた前記N型及びP型半導体領域の上方に前記金属箔を配置することの前に、前記基板の外周と実質的に同じサイズの外周を有するように前記金属箔を切断することを更に含む、請求項14に記載の方法。
- 前記金属箔の前記隆起を交互に設けられた前記N型及びP型半導体領域に接着させることが、レーザー溶接プロセス、熱圧縮プロセス及び超音波接合プロセスからなる群から選択される技術を使用することを含む、請求項9から15の何れか一項に記載の方法。
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US9620655B1 (en) * | 2015-10-29 | 2017-04-11 | Sunpower Corporation | Laser foil trim approaches for foil-based metallization for solar cells |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH02135786A (ja) * | 1988-11-16 | 1990-05-24 | Mitsubishi Electric Corp | 太陽電池セル |
US6423568B1 (en) * | 1999-12-30 | 2002-07-23 | Sunpower Corporation | Method of fabricating a silicon solar cell |
WO2003047005A2 (en) * | 2001-11-26 | 2003-06-05 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
FI20030919A (fi) | 2003-06-19 | 2004-12-20 | Avantone Oy | Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti |
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US7744714B2 (en) | 2006-11-20 | 2010-06-29 | E.I. Du Pont De Nemours And Company | Paste patterns formation method and transfer film used therein |
EP2100336A4 (en) | 2006-12-22 | 2013-04-10 | Applied Materials Inc | INTERCONNECTION TECHNOLOGIES FOR REAR CONTACT SOLAR CELLS AND MODULES |
JP5214153B2 (ja) | 2007-02-09 | 2013-06-19 | 大日本スクリーン製造株式会社 | 熱処理装置 |
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US20100071765A1 (en) | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
US20120012180A1 (en) * | 2009-03-25 | 2012-01-19 | Yoshiya Abiko | Back electrode type solar cell, connecting sheet, solar cell with connecting sheet, solar cell module, method of manufacturing solar cell with connecting sheet, and method of manufacturing solar cell module |
US8779280B2 (en) * | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
KR101128838B1 (ko) * | 2009-08-18 | 2012-03-23 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN102054717A (zh) * | 2009-11-10 | 2011-05-11 | 飞思卡尔半导体公司 | 半导体芯片栅格阵列封装及其制造方法 |
CN104867994A (zh) * | 2010-06-23 | 2015-08-26 | 吉坤日矿日石能源株式会社 | 光电转换元件 |
NL2005811C2 (en) | 2010-09-24 | 2012-03-27 | Solland Solar Cells B V | Method and apparatus for soldering contacts in a solar panel. |
JP5834709B2 (ja) * | 2010-09-30 | 2015-12-24 | 大日本印刷株式会社 | 太陽電池集電用シート及びそれを用いた太陽電池モジュール |
CN102637767B (zh) * | 2011-02-15 | 2015-03-18 | 上海凯世通半导体有限公司 | 太阳能电池的制作方法以及太阳能电池 |
US8533949B2 (en) * | 2011-02-14 | 2013-09-17 | General Electric Company | Methods of manufacture for components with cooling channels |
US9293635B2 (en) | 2012-03-19 | 2016-03-22 | Rec Solar Pte. Ltd. | Back junction back contact solar cell module and method of manufacturing the same |
US9812592B2 (en) | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
US9437756B2 (en) | 2013-09-27 | 2016-09-06 | Sunpower Corporation | Metallization of solar cells using metal foils |
US20160163901A1 (en) * | 2014-12-08 | 2016-06-09 | Benjamin Ian Hsia | Laser stop layer for foil-based metallization of solar cells |
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