JP7623094B2 - レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 - Google Patents

レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 Download PDF

Info

Publication number
JP7623094B2
JP7623094B2 JP2023545446A JP2023545446A JP7623094B2 JP 7623094 B2 JP7623094 B2 JP 7623094B2 JP 2023545446 A JP2023545446 A JP 2023545446A JP 2023545446 A JP2023545446 A JP 2023545446A JP 7623094 B2 JP7623094 B2 JP 7623094B2
Authority
JP
Japan
Prior art keywords
substrate
layer
insulating layer
laser beam
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023545446A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023032706A1 (https=
JPWO2023032706A5 (https=
Inventor
昇 大池
清隆 今井
良浩 廣田
基之 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023032706A1 publication Critical patent/JPWO2023032706A1/ja
Publication of JPWO2023032706A5 publication Critical patent/JPWO2023032706A5/ja
Application granted granted Critical
Publication of JP7623094B2 publication Critical patent/JP7623094B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2023545446A 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 Active JP7623094B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021142969 2021-09-02
JP2021142969 2021-09-02
PCT/JP2022/031324 WO2023032706A1 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2023032706A1 JPWO2023032706A1 (https=) 2023-03-09
JPWO2023032706A5 JPWO2023032706A5 (https=) 2024-05-16
JP7623094B2 true JP7623094B2 (ja) 2025-01-28

Family

ID=85412240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545446A Active JP7623094B2 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

Country Status (5)

Country Link
US (1) US20240387176A1 (https=)
JP (1) JP7623094B2 (https=)
KR (1) KR20240046917A (https=)
CN (1) CN117836903A (https=)
WO (1) WO2023032706A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Also Published As

Publication number Publication date
US20240387176A1 (en) 2024-11-21
JPWO2023032706A1 (https=) 2023-03-09
TW202338911A (zh) 2023-10-01
WO2023032706A1 (ja) 2023-03-09
CN117836903A (zh) 2024-04-05
KR20240046917A (ko) 2024-04-11

Similar Documents

Publication Publication Date Title
JP7614526B2 (ja) 光学部材の製造方法
TWI525667B (zh) 用於癒合半導體層中的缺陷之方法
US9269561B2 (en) Wafer debonding using long-wavelength infrared radiation ablation
TWI706388B (zh) 可撓性顯示裝置之製造方法
CN108231569B (zh) 中介层的制造方法
TWI675412B (zh) 半導體裝置及其製造方法
CN107408582B (zh) 用于基于箔的太阳能电池金属化的厚损伤缓冲层
US8835253B2 (en) Photoelectric conversion device fabrication method and photoelectric conversion device
CN102405528A (zh) 一种用于制备具有局部开口的电介质层的半导体装置特别是太阳能电池的方法以及相应的半导体装置
US12040190B2 (en) Semiconductor manufacturing method and manufacturing device of edge laser removal of combined substrate
JP7623094B2 (ja) レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置
JP7708514B2 (ja) レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置
TWI222159B (en) Semiconductor device, and method for manufacturing semiconductor device
CN115036234A (zh) 半导体制造装置及半导体装置的制造方法
TWI917689B (zh) 雷射剝離用之疊層基板、基板處理方法及基板處理裝置
TW201025629A (en) Photoelectric conversion device
JP6564555B1 (ja) フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板
JP7674068B2 (ja) 半導体チップの製造方法、及び基板処理装置
JP7834217B2 (ja) 積層基板の製造方法
JP7690038B2 (ja) 基板処理方法及び基板処理装置
US20240304494A1 (en) Method of manufacturing semiconductor device, method for separating substrate, and substrate processing apparatus
CN121693079A (zh) 积层衬底及半导体装置的制造方法
JPS60123071A (ja) 光電変換装置作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241217

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250114

R150 Certificate of patent or registration of utility model

Ref document number: 7623094

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150