WO2023032706A1 - レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 - Google Patents

レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 Download PDF

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Publication number
WO2023032706A1
WO2023032706A1 PCT/JP2022/031324 JP2022031324W WO2023032706A1 WO 2023032706 A1 WO2023032706 A1 WO 2023032706A1 JP 2022031324 W JP2022031324 W JP 2022031324W WO 2023032706 A1 WO2023032706 A1 WO 2023032706A1
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Prior art keywords
substrate
layer
insulating layer
laser beam
electrode
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Ceased
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PCT/JP2022/031324
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English (en)
French (fr)
Japanese (ja)
Inventor
昇 大池
清隆 今井
良浩 廣田
基之 佐藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN202280057262.4A priority Critical patent/CN117836903A/zh
Priority to KR1020247009730A priority patent/KR20240046917A/ko
Priority to US18/688,382 priority patent/US20240387176A1/en
Priority to JP2023545446A priority patent/JP7623094B2/ja
Publication of WO2023032706A1 publication Critical patent/WO2023032706A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Definitions

  • the present disclosure relates to a laminated substrate for laser lift-off, a substrate processing method, and a substrate processing apparatus.
  • Non-Patent Document 1 When forming a device layer on a substrate such as a silicon wafer, plasma CVD (Chemical Vapor Deposition), plasma ALD (Atomic Layer Deposition), plasma etching, or the like is used. Accumulation of charged particles caused by plasma irradiation damages the device layer. Therefore, it has been proposed to form a discharge path so that the device layer is not damaged (see, for example, Non-Patent Document 1).
  • One aspect of the present disclosure provides a technique for suppressing irradiation of a device layer with a laser beam through a discharge path and suppressing damage to the device layer.
  • a laminated substrate for laser lift-off includes a first substrate that transmits a laser beam, a first insulating layer that absorbs the laser beam, a first polysilicon layer that transmits the laser beam, and the laser beam.
  • a second insulating layer that absorbs, a second polysilicon layer that transmits the laser beam, and a first device layer are provided in that order.
  • the laminated substrate includes: a first electrode penetrating the first insulating layer and electrically connecting the first substrate and the first polysilicon layer; a second electrode electrically connecting the silicon layer and the second polysilicon layer.
  • the first electrode and the second electrode contain a material that transmits the laser beam, and are separated from each other without overlapping in plan view.
  • the present disclosure it is possible to suppress the irradiation of the device layer with the laser beam through the discharge path, thereby suppressing damage to the device layer.
  • FIG. 1 is a cross-sectional view showing a laminated substrate according to one embodiment.
  • FIG. 2 is a cross-sectional view showing formation of a separation starting point by the substrate processing apparatus according to one embodiment.
  • FIG. 3 is a cross-sectional view showing an example of the arrangement of separation starting points.
  • FIG. 4 is a cross-sectional view showing separation by the substrate processing apparatus according to one embodiment.
  • FIG. 5 is a cross-sectional view showing a laminated substrate according to a first modified example.
  • FIG. 6 is a diagram showing an example of the relationship between the thickness of the first insulating layer and the energy of the laser beam required to form the separation starting point.
  • FIG. 7 is a cross-sectional view showing a laminated substrate according to a second modified example.
  • planar view means viewing from a direction perpendicular to the surface of the laminated substrate 1 irradiated with the laser beam LB.
  • a laminated substrate 1 for laser lift-off will be described with reference to FIG.
  • the laminated substrate 1 includes, for example, a first substrate 11, a first insulating layer 12, a first polysilicon layer 13, a second insulating layer 14, a second polysilicon layer 15, a first device layer 16, are prepared in this order.
  • Laser lift-off which will be described later in detail, is a technique for separating the first substrate 11 from the first device layer 16 using a laser beam LB that passes through the first substrate 11, as shown in FIGS.
  • the first substrate 11 is, for example, a silicon wafer.
  • the first substrate 11 is not limited to a silicon wafer, and may be a compound semiconductor wafer or a glass substrate.
  • a first insulating layer 12, a first polysilicon layer 13, a second insulating layer 14, a second polysilicon layer 15, and a first device layer 16 are formed in this order on one side of the first substrate 11. be done. After that, a first bonding layer 17, which will be described later, may be formed.
  • the first insulating layer 12 absorbs the laser beam LB and forms a separation starting point 12a.
  • a crack is formed at the separation starting point 12a due to shear stress or the like.
  • a modified layer obtained by modifying the first insulating layer 12 may be formed at the separation starting point 12a.
  • the separation starting point 12 a is formed at the interface between the first substrate 11 and the first insulating layer 12 , but may be formed inside the first insulating layer 12 .
  • the first insulating layer 12 has insulating properties. Insulating materials are excellent in absorbing the laser beam LB.
  • the first insulating layer 12 is, for example, an oxide layer.
  • a specific example of the oxide layer is a silicon oxide layer.
  • the oxide layer is formed by a thermal oxidation method, a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, or the like.
  • TEOS Tetra Ethoxy Silane
  • the first insulating layer 12 may be a silicon nitride layer, a silicon carbonitride layer, or the like.
  • a through hole is formed in the first insulating layer 12 .
  • a first electrode 18 is provided in the through hole.
  • the first electrode 18 penetrates the first insulating layer 12 and electrically connects the first substrate 11 and the first polysilicon layer 13 .
  • the first electrode 18 is used as part of a discharge path for discharging charged particles (eg, electrons or holes) that accumulate in the first device layer 16 during formation of the first device layer 16 to the first substrate 11 .
  • Plasma CVD, plasma ALD, plasma etching, or the like is used to form the first device layer 16 . If charged particles accumulate due to plasma irradiation, the first device layer 16 will be damaged. According to this embodiment, since the first electrode 18 and the like form the discharge path, damage to the first device layer 16 can be suppressed.
  • the first electrode 18 contains polysilicon, for example, and has an impurity concentration of, for example, 1.0 ⁇ 10 19 /cm 3 or more and less than 3.0 ⁇ 10 20 /cm 3 .
  • Impurities dopants
  • the first polysilicon layer 13 is part of the discharge path mentioned above.
  • the first polysilicon layer 13 has an impurity concentration of, for example, 1.0 ⁇ 10 19 /cm 3 or more and less than 3.0 ⁇ 10 20 /cm 3 .
  • Impurities can be either donors or acceptors. If the impurity concentration is 1.0 ⁇ 10 19 /cm 3 or more, the discharge property is good. If the impurity concentration is less than 3.0 ⁇ 10 20 /cm 3 , the first polysilicon layer 13 has a high transmittance with respect to the laser beam LB.
  • the second insulating layer 14 absorbs the laser beam LB.
  • the absorption rate of the laser beam LB in the second insulating layer 14 is, for example, 70% to 100%. It is possible to prevent the first device layer 16 from being irradiated with the high-intensity laser beam LB, so that damage to the first device layer 16 can be suppressed.
  • the second insulating layer 14 has the same thickness as the first insulating layer 12, but may have a different thickness as described below.
  • the second insulating layer 14 has insulating properties like the first insulating layer 12 . Insulating materials are excellent in absorbing the laser beam LB.
  • the second insulating layer 14 is, for example, an oxide layer. A specific example of the oxide layer is a silicon oxide layer.
  • the oxide layer is formed by a thermal oxidation method, a CVD method, an ALD method, or the like.
  • the second insulating layer 14 may be a silicon nitride layer, a silicon carbonitride layer, or the like.
  • a second electrode 19 is provided in the through hole.
  • the second electrode 19 penetrates the second insulating layer 14 and electrically connects the first polysilicon layer 13 and the second polysilicon layer 15 .
  • the second electrode 19 is part of the discharge path described above.
  • the second electrode 19 contains polysilicon, for example, and has an impurity concentration of, for example, 1.0 ⁇ 10 19 /cm 3 or more and less than 3.0 ⁇ 10 20 /cm 3 . Impurities can be either donors or acceptors.
  • the second polysilicon layer 15 is part of the discharge path mentioned above.
  • the second polysilicon layer 15 has an impurity concentration of, for example, 1.0 ⁇ 10 19 /cm 3 or more and less than 3.0 ⁇ 10 20 /cm 3 .
  • Impurities can be either donors or acceptors. If the impurity concentration is 1.0 ⁇ 10 19 /cm 3 or more, the discharge property is good. If the impurity concentration is less than 3.0 ⁇ 10 20 /cm 3 , the second polysilicon layer 15 has a high transmittance with respect to the laser beam LB.
  • the first device layer 16 includes, for example, semiconductor elements.
  • the first device layer 16 includes, for example, 3D NAND cells, logic cells, or DRAM cells.
  • the laser beam LB after passing through the first electrode 18, is not absorbed by the second insulating layer 14, and irradiates the first device layer 16 as it is. It will be done. Since the first device layer 16 is irradiated with the high-intensity laser beam LB, the first device layer 16 is damaged.
  • the laminated substrate 1 of this embodiment includes a second insulating layer 14 . Therefore, the laser beam LB is absorbed by the second insulating layer 14 after passing through the first electrode 18, as indicated by the two-dot chain line arrow in FIG. Therefore, it is possible to prevent the first device layer 16 from being irradiated with the high-intensity laser beam LB, thereby suppressing damage to the first device layer 16 . Outside the first electrode 18, the laser beam LB is absorbed by the first insulating layer 12 as indicated by the solid line arrow in FIG.
  • the first polysilicon layer 13, the second polysilicon layer 15, the first electrode 18, and the second electrode 19 contain a material (for example, polysilicon) that transmits the laser beam LB. If the first electrode 18 overlaps the second electrode 19 in a plan view (viewed from above in FIG. 3), the laser beam LB passes through the first electrode 18 and then the second electrode 19. , reaches the first device layer 16 as it is.
  • a material for example, polysilicon
  • the first electrode 18 and the second electrode 19 are separated without overlapping. Therefore, the laser beam LB is absorbed by the second insulating layer 14 after passing through the first electrode 18, as indicated by the two-dot chain line arrow in FIG. Therefore, it is possible to prevent the first device layer 16 from being irradiated with the high-intensity laser beam LB, thereby suppressing damage to the first device layer 16 .
  • the laminated substrate 1 includes a first bonding layer 17, a second bonding layer 27, a second device layer 26, a second substrate 21, and a may be provided in this order.
  • the first substrate 11 and the second substrate 21 are bonded via the first device layer 16 and the second device layer 26 .
  • the first bonding layer 17 is formed on the surface of the first device layer 16 .
  • the first bonding layer 17 is an insulating layer such as a silicon oxide layer.
  • the first bonding layer 17 may include wiring that electrically connects the first device layer 16 and the second device layer 26 .
  • the first bonding layer 17 has a bonding surface 17 a in contact with the second bonding layer 27 .
  • the bonding surface 17a may be activated by plasma or the like before the first bonding layer 17 and the second bonding layer 27 are opposed to each other and bonded, and may be made hydrophilic by supplying water or steam.
  • the second substrate 21 is, for example, a silicon wafer.
  • the second substrate 21 is not limited to a silicon wafer, and may be a compound semiconductor wafer or a glass substrate.
  • a second device layer 26 and a second bonding layer 27 are formed in this order on the surface of the second substrate 21 facing the first substrate 11 .
  • the second device layer 26 includes, for example, semiconductor elements.
  • the second device layer 26 is electrically connected with the first device layer 16 .
  • Second device layer 26 has a different function than first device layer 16 .
  • the second device layer 26 contains CMOS (Complementary Metal Oxide Semiconductor) logic circuits and the first device layer 16 contains 3D NAND cells.
  • CMOS Complementary Metal Oxide Semiconductor
  • the second bonding layer 27, like the first bonding layer 17, is an insulating layer such as a silicon oxide layer.
  • the second bonding layer 27 may include wiring that electrically connects the first device layer 16 and the second device layer 26 .
  • the second bonding layer 27 has a bonding surface 27 a that contacts the first bonding layer 17 .
  • the bonding surface 27a may be activated by plasma or the like, and may be made hydrophilic by supplying water or steam.
  • the first bonding layer 17 and the second bonding layer 27 are bonded by van der Waals forces (intermolecular forces) and hydrogen bonds between OH groups.
  • a covalent bond may be generated by a dehydration condensation reaction of a hydrogen bond. Since the solids are directly bonded together without using a liquid adhesive, misalignment due to deformation of the adhesive can be prevented. In addition, it is possible to prevent the occurrence of inclination due to uneven thickness of the adhesive.
  • the laminated substrate 1 includes a first substrate 11, a first insulating layer 12, a first polysilicon layer 13, a second insulating layer 14, a second polysilicon layer 15, a first device layer 16, should be provided in this order.
  • the laminated substrate 1 does not have to include the first bonding layer 17 , the second bonding layer 27 , the second device layer 26 and the second substrate 21 .
  • the substrate processing apparatus 3 separates the first substrate 11 from the first device layer 16 using a laser beam LB that passes through the first substrate 11 .
  • the substrate processing apparatus 3 includes, for example, a first substrate holding section 31, an irradiator 32, a first driving section 33, a second substrate holding section 34, a second driving section 35, and a control section 39. .
  • the first substrate holding part 31 holds the laminated substrate 1 as shown in FIG.
  • the first substrate holding part 31 holds the laminated substrate 1 horizontally from below, for example, with the first substrate 11 facing upward.
  • the first substrate holder 31 is, for example, a vacuum chuck.
  • the first driving section 33 moves the first substrate holding section 31 in the horizontal direction and rotates it about a vertical rotation axis.
  • the first driving section 33 may move the first substrate holding section 31 in the vertical direction.
  • the irradiator 32 irradiates the laminated substrate 1 held by the first substrate holding portion 31 with the laser beam LB.
  • the laser beam LB is, for example, infrared rays and has a wavelength of, for example, 8.8 ⁇ m to 11 ⁇ m.
  • the silicon wafer that is the first substrate 11 has high infrared transmittance, and the first insulating layer 12 has high infrared absorption.
  • a peeling starting point 12 a is formed at the irradiation point of the laser beam LB on the first insulating layer 12 .
  • the irradiator 32 includes an oscillator that oscillates the laser beam LB.
  • the oscillator pulse-oscillates the laser beam LB.
  • the oscillator is for example a CO2 laser.
  • the wavelength of the CO2 laser is about 9.3 ⁇ m.
  • Illuminator 32 may include a condenser lens. The condensing lens converges the laser beam LB toward the laminated substrate 1 .
  • the irradiator 32 may include a galvanometer scanner or a polygon scanner in order to move the irradiation point of the laser beam LB on the laminated substrate 1.
  • the first driving unit 33 may move the irradiation point of the laser beam LB on the laminated substrate 1 by moving the first substrate holding unit 31 in the horizontal direction or rotating it about the vertical rotation axis. . In this case, a galvanometer scanner or the like is unnecessary.
  • the second substrate holding part 34 holds the laminated substrate 1 as shown in FIG.
  • the second substrate holding part 34 holds the laminated substrate 1 from the side opposite to the first substrate holding part 31 (for example, from above).
  • the second substrate holding part 34 is, for example, a vacuum chuck.
  • the second driving section 35 moves the second substrate holding section 34 in the horizontal direction and rotates it about the vertical rotation axis.
  • the second driving section 35 may move the second substrate holding section 34 in the vertical direction.
  • the control unit 39 is, for example, a computer, and includes a CPU (Central Processing Unit) 391 and a storage medium 392 such as a memory.
  • the storage medium 392 stores programs for controlling various processes executed in the substrate processing apparatus 3 .
  • the control unit 39 controls the operation of the substrate processing apparatus 3 by causing the CPU 391 to execute programs stored in the storage medium 392 .
  • the control unit 39 controls the irradiator 32 and the first driving unit 33 to form the separation starting point 12 a at the interface between the first substrate 11 and the first insulating layer 12 .
  • a large number of peeling starting points 12 a are formed at intervals in the radial direction and the circumferential direction of the first substrate 11 .
  • the plurality of separation starting points 12a may be arranged concentrically or spirally. Note that the separation starting point 12a may be formed inside the first insulating layer 12 as described above.
  • control unit 39 controls the second driving unit 35 to control the peeling of the first substrate 11 from the first device layer 16 .
  • the second driving section 35 raises the second substrate holding section 34 while the first substrate holding section 31 sucks the second substrate 21 and the second substrate holding section 34 holds the first substrate 11 .
  • a crack connecting the plurality of separation starting points 12a in a plane is formed, and the first substrate 11 and the first device layer 16 are separated.
  • control section 39 may lower the first substrate holding section 31 instead of or in addition to raising the second substrate holding section 34 .
  • the control unit 39 may relatively separate the first substrate holding unit 31 and the second substrate holding unit 34 in the vertical direction.
  • the controller 39 may rotate the first substrate holder 31 or the second substrate holder 34 .
  • the thickness t1 of the first insulating layer 12 may be greater than the thickness t2 of the second insulating layer .
  • a thickness t1 of the first insulating layer 12 is, for example, greater than 1.0 ⁇ m.
  • the thickness t2 of the second insulating layer 14 is, for example, 0.5 ⁇ m to 1.0 ⁇ m.
  • FIG. 6 shows an example of the relationship between the thickness t1 of the first insulating layer 12 and the energy E of the laser beam LB required to form the separation starting point 12a.
  • the laser beam LB with a small energy E can not only form the peeling starting point 12a in the first insulating layer 12, but also It is possible to suppress the formation of a peeling starting point at 14 and suppress the occurrence of peeling at an unintended position.
  • the magnitude relationship between the thickness t1 of the first insulating layer 12 and the thickness t2 of the second insulating layer 14 may be reversed, and the thickness t2 of the second insulating layer 14 may be greater than the thickness t1 of the first insulating layer 12.
  • the separation starting point 12 a is formed at the interface between the first polysilicon layer 13 and the second insulating layer 14 or inside the second insulating layer 14 .
  • the laminated substrate 1 may have a conductive layer 41 between the second insulating layer 14 and the second polysilicon layer 15 that reflects the laser beam LB.
  • the reflectance of the laser beam LB on the conductive layer 41 is, for example, 70% to 100%.
  • Conductive layer 41 is part of the discharge path described above.
  • Conductive layer 41 includes, for example, a transition metal, a conductive oxide, or polysilicon.
  • Transition metals include, for example, at least one selected from the group consisting of Cu, Co, Ru, Mo, W, and Ti.
  • Conductive oxides include, for example, IGZO (an oxide containing indium, gallium, and zinc), or ITO (indium tin oxide).
  • Polysilicon contained in the conductive layer 41 has an impurity concentration higher than that of the second polysilicon layer 15, for example, 3.0 ⁇ 10 20 /cm 3 or more and 3.0 ⁇ 10 21 /cm 3 or less. have.
  • the conductive layer 41 can reduce the intensity of the laser beam LB reaching the first device layer 16 and reliably suppress damage to the first device layer 16 .
  • first substrate 12 first insulating layer 13 first polysilicon layer 14 second insulating layer 15 second polysilicon layer 16 first device layer 18 first electrode 19 second electrode LB laser beam

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PCT/JP2022/031324 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 Ceased WO2023032706A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202280057262.4A CN117836903A (zh) 2021-09-02 2022-08-19 激光剥离用的层叠基板、基板处理方法以及基板处理装置
KR1020247009730A KR20240046917A (ko) 2021-09-02 2022-08-19 레이저 리프트 오프용의 적층 기판, 기판 처리 방법 및 기판 처리 장치
US18/688,382 US20240387176A1 (en) 2021-09-02 2022-08-19 Stacked substrate for laser lift-off, substrate processing method, and substrate processing apparatus
JP2023545446A JP7623094B2 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

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JP2021-142969 2021-09-02
JP2021142969 2021-09-02

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JP2003163323A (ja) * 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) * 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) * 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) * 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) * 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) * 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

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